Microstructure,mechanical and tribological properties of Ti–B–C–N films prepared by reactive magnetron sputtering

Quaternary Ti–B–C–N thin films are deposited on high-speed steel substrates by the reactive magnetron sputtering (RMS) technique. The microstructure, mechanical and tribological properties of Ti–B–C–N films with different carbon contents (from 28.9 at.% to 54.2 at.%) are explored systematically. The microstructure of Ti–B–C–N films deposited by RMS is consisted mainly of Ti(C, N) nano-crystals embedded into an amorphous matrix of a-C/a-CN/a-BN/a-BC. As the carbon content increases, the crystalline size of the films diminishes, but the hardness linearly increases from 14 GPa to 26 GPa. The friction coefficient of the films sliding against steel GCr15 balls in air decreases with the increase of carbon content, which shows that Ti–B–C–N films with both higher hardness and lower friction coefficient can be obtained by means of increasing the carbon concentration in the films.     

Mechanical properties and thermal stability of SiBCN films prepared by ion beam assisted sputter deposition

The high hardness, exceptional high temperature stability, and oxidation resistance of bulk Si–B–C–N ceramics have led to the expectation that these materials will be good candidates for superior coating materials in high-temperature applications. In this study, SiBCN films were prepared using ion beam assisted sputter (IBAS) deposition, and the mechanical properties and thermal stabilities of the films at 600, 700, and 800 °C in air were investigated. In particular, the effects of the ion beam assist on the properties of the SiBCN films were examined. The SiBCN films were deposited on Si plates by sputtering a target composed of Si + BN + C using a 2-keV Ar⁺ ion beam. A low-energy N₂⁺ and Ar⁺ mixed ion beam irradiated the samples during the sputter deposition. The Si content in the SiBCN films was controlled by changing the Si/(BN + C) ratio of the target. BCN films were also deposited for comparison. The composition and chemical bonding structure of the prepared films were investigated by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. We found that c-BN bonds were formed in the ion-assisted BCN film. The oxide layer thickness on the SiBCN films after thermal annealing decreased due to the IBAS deposition and an increase in the Si content. Ion-assisted SiBCN films annealed at 800 °C showed the highest hardness of 20 GPa.     

The control of BN and BC bonds in BCN films synthesized using pulsed laser deposition

A novel chemical bond transformation from BN to BC was observed in BCN films synthesized using pulsed laser deposition (PLD). BCN film prepared by using green laser (λ=532 nm) induced two IR absorption at 1370 and 800 cm⁻¹. This film was dominated by amorphous carbon phase and sp² hybridized BN bonds. BCN film deposited using an ultraviolet (UV) laser (λ=266 nm ) induced an addition infrared (IR) absorption at 1250 cm⁻¹. As we deposit BCN film by deep-UV laser (λ=213 nm), the absorption at 1370 and 800 cm⁻¹ disappeared while the absorption at 1250 cm⁻¹ remained. According to X-ray photoelectron spectroscopy (XPS), BC bonds with a carbon rich composition were formed. The formation of BC bonds in BCN films was also sensitive to deposition gas pressure and substrate temperature. Reactive carbon and boron species were needed to enable BC bonds that hybridized the carbon and the BN phases. A low substrate temperature was required to avoid competition with sp² hybridized pure BN and pure carbon bonds.     

Structure and characteristics of amorphous (Ti,Si)–C:H films deposited by reactive magnetron sputtering

The hydrogenated amorphous carbon films doped with Ti and Si ((Ti,Si)–C:H) were deposited on silicon substrates using reactive magnetron sputtering Ti₈₀Si₂₀ composite target in an argon and methane gas mixture. The structures of the films were analyzed by X-ray photoelectron spectroscopy and Visible Raman spectroscopy. The morphologies were observed by atomic force microscope. The friction coefficients of the films were tested on the ball-on-disc tribometer. The results indicate that the sp³/sp² ratios in the films can be varied from 0.18 to 0.63 by changing Ti and Si contents at various CH₄ flow rates. The surface of the films becomes smoother and more compact as the CH₄ flow rate increases. The lowest friction coefficient is as low as 0.0139 for the film with Ti of 4.5 at.% and Si of 1.0 at.%. Especially, the film exhibits a superlow value (μ < 0.01) under ambient air with 40% relative humidity in friction process. The superlow friction coefficient in ambient air may be, attributable to synergistic effects of a combination of Ti and Si in the film.     

X-ray photoemission spectroscopy of nitrogen-doped UNCD/a-C:H films prepared by pulsed laser deposition

Nitrogen-doped ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) films were deposited by pulsed laser deposition (PLD). Nitrogen contents in the films were controlled by varying a ratio in the inflow amount between nitrogen and hydrogen gases. The film doped with a nitrogen content of 7.9 at.% possessed n-type conduction with an electrical conductivity of 18 Ω^? 1 cm^? 1 at 300 K. X-ray photoemission spectra, which were measured using synchrotron radiation, were decomposed into four component spectra due to sp², sp³ hybridized carbons, C=N and C–N. A full-width at half-maximum of the sp³ peak was 0.91 eV. This small value is specific to UNCD/a-C:H films. The sp²/(sp³ + sp²) value was enhanced from 32 to 40% with an increase in the nitrogen content from 0 to 7.9 at.%. This increment probably originates from the nitrogen incorporation into an a-C:H matrix and grain boundaries of UNCD crystallites. Since an electrical conductivity of a-C:H does not dramatically enhance for this doping amount according to previous reports, we believe that the electrical conductivity enhancement is predominantly due to the nitrogen incorporation into grain boundaries.     

Structure and mechanical properties of oxygen doped diamond-like carbon thin films

In this study, structure and mechanical properties of doped diamond-like carbon (DLC) films with oxygen were investigated. A mixture of methane (CH₄), argon (Ar) and oxygen (O₂) was used as feeding gas, and the RF-PECVD technique was used as a deposition method. The thin films were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy (RS), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and a combination of elastic recoil detection analysis and Rutherford backscattering (ERDA-RBS). Nano-indentation tests were performed to measure hardness. Also, the residual stress of the films was calculated by Stoney equation. The XPS and ERDA-RBS results indicated that by increasing the oxygen in the feeding gas up to 5.6 vol.%, the incorporation of oxygen into the films' structure was increased. The ratio of sp² to sp³ sites was changed by the variation of oxygen content in the film structure. The sp²/sp³ ratios are 0.43 and 1.04 for un-doped and doped DLC films with 5.6 vol.% oxygen in the feeding gas, respectively. The Raman spectroscopy (RS) results showed that by increasing the oxygen content in doped DLC films, the amount of sp² CC aromatic bonds was raised and the hydrogen content reduced in the structure. The attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) confirmed the decrease of hydrogen content and the increase the ratio of CC aromatic to olefinic bonds. Hardness and residual stress of the films were raised by increasing the oxygen content within the films' structure. The maximum hardness (19.6 GPa) and residual stress (0.29 GPa) were obtained for doped DLC films, which had the maximum content of oxygen in structure, while the minimum hardness (7.1 GPa) and residual stress (0.16 GPa) were obtained for un-doped DLC films. The increase of sp³ CC bonds between clusters and the decrease of the hydrogen content, with a simultaneous increase of oxygen in the films' structure is the reason for increase of hardness and residual stress.     

Tribological study of amorphous BC4N coatings

Amorphous BC₄N thin films with a thickness of ∼ 2 μm have been deposited by Ion Beam Assisted Deposition (IBAD) on hard steels substrates, in order to study the wear behavior under high loads and the applicability as protective coatings. The bonding structure of the a-BC₄N film was assessed by X-ray Absorption Near Edge Spectroscopy (XANES) and Infrared Spectroscopy, indicating atomic mixing of B–C–N atoms, with a proportion of ∼ 70% sp² hybrids and ∼ 30% sp³ hybrids. Nanoindentation shows a hardness of ∼ 18 GPa and an elastic modulus of ∼ 170 GPa. A detailed tribological study is performed by pin-on-disk tests, combined with spectromicroscopy of the wear track at the coating and wear scar at pin. The tests were performed at ambient conditions, against WC/Co counterface balls under loads up to 30 N, with the sample rotating at 375 rpm. The coatings suffer a continuous wear, at a constant rate of 2 × 10^− 7 mm³/Nm, without catastrophic failure due to film spallation, and show a coefficient of friction of ∼ 0.2.     

Nitrogenated carbon films deposited using filtered cathodic arc

Nitrogenated carbon films were deposited on various substrates using filtered cathodic arc. Non-uniformity of the film thickness was less than 5% over a 15 cm diameter area. Mechanical, optical (refraction index, extinction coefficient versus wavelength) and electrical properties were investigated as a function of nitrogen flow rate. Deposited coatings demonstrated high hardness of 40–65 GPa, Young's modulus 200–285 GPa, excellent elastic recovery, high critical pressure for scratch formation, and surface smoothness. While the hardness showed a relatively small decrease with nitrogen flow increase, the stress decrease was more significant (8–3.8 GPa). Extremely low wear rates were observed, even at high contact pressures, and no substantial debris was detected indicating that carbon is oxidized during wear. Clear correlation was found between transparency, electrical resistivity and stress of the films. Transparency and resistivity showed a significant rise with an increase of stress. An explanation of the film properties is based on the assumption that the basic characteristics of the deposited films were determined by the relative proportion of two three dimensional complementary type of bonds; the tetrahedral sp³ bonds leading to stiff networks, and the trigonal sp² arrangments close to fullerene-like, or nanotube-like, structures.     

Temperature effect on bonding structures of amorphous carbon containing more than 30at.% silicon

Bonding evolution of amorphous carbon incorporated with Si or a-C(Si) in a thermal process has not been studied. Unhydrogenated a-C(Si) films were deposited by magnetron sputtering to undergo two different thermal processes: i) sputter deposition at substrate temperatures from 100 to 500 °C; ii) room temperature deposition followed by annealing at 200 to 1000 °C. The hardness of the films deposited at high temperature exhibits a monotonic decrease whereas the films deposited at room temperature maintained their hardness until 600 °C. X-ray photoelectron spectroscopy and Raman spectroscopy were used to analyze the composition and bonding structures. It was established that the change in the mechanical property is closely related to the atomic bonding structures, their relative fractions and the evolution (conversion from C–C sp³ → CC sp² or CC sp² → C–Si sp³) as well as clustering of sp² structures.     

The infrared characteristics investigation of carbon nitride films

Two series of a-C(N):H films, with diamond-like character and graphite-like character respectively, are prepared. Without N incorporation, the two kinds of films have very close IR bands in the range of 1000–1800 cm^− 1. However, the difference in IR activity of the two series films became dramatical as N was introduced into both kinds of carbon films, which is attributed to purely electronic effect, the electronegativity of N. The N incorporated in carbon films is able to induce bond dipole of CC bonds in sp² graphite cluster, leading to a degree of dipoles for all the aromatic sp² CC bonds, a permanent electric dipole effect arises and this could lead to the increase in IR activity of the sp² clusters. As the N content exceeds 20 at.% in the carbon films, strong conjugation of C≡N bonds with aromatic graphite rings can induce conjugated π bond dipole too.     

Influence of negative bias voltage on microstructure and property of Al-Ti-N films deposited by multi-arc ion plating

In this study, we systematically investigated the effects of negative bias voltage on the composition, deposition efficiency, microstructure, and mechanical properties of multi-arc ion plated (MAIP) AlTiN films. The films were deposited on high-speed steel substrates by MAIP at various negative bias voltages. The results indicated that the Al content [Al/(Al+Ti) ratio] and the deposition efficiency were significantly altered by the application of negative bias voltages. X-ray photoelectron spectroscopy analysis showed that the AlTiN films were composed of Ti–N and Al–N bonds. The macroparticles (MPs) on the film surface decreased with increasing negative bias voltage. We also discussed the different types of MPs found on the films and their influence on the process of determining the hardness of the films. The microhardness of the films depends on the negative bias voltages. The films deposited at −250 V exhibited a maximum hardness of ~45 GPa. The adhesion and frictional tests revealed that the film deposited at −150 V demonstrated the highest cracking resistance, the best adhesion under a critical load of 78 N, highest adhesion strength, and the lowest and stablest coefficient of friction at 0.23.     

XPS spectra of thin CNx films prepared by chemical vapor deposition

Carbon nitride (CN_x) thin films with an N/C ratio of 0.605:0.522 have been synthesized using different sources as a ksilol, CCl₄, N₂ and NH₃ by PECVD (plasma enhanced chemical vapor deposition) and hot filament-CVD reactors. X-ray photoelectron spectroscopy (XPS) analyses, which give C_1s peaks with a maximum at 285.7 eV and 287 eV, typical for C–N bonds and sp² hybridization and CN bonds and sp³ hybridization, respectively. The observed and N_1s peaks with a maximum at about 399 eV suggest the existence of different C–N bonds and polycrystallite structure in the amorphous carbide matrix. The concentration of the different CN bonds varies, depending on the deposition technique.     

Dependence of the composition and bonding structure of carbon nitride films deposited by direct current plasma assisted pulsed laser ablation on the deposition temperature

Carbon nitride films were deposited by direct current plasma assisted pulsed laser ablation of a graphite target under nitrogen atmosphere. Atomic force microscopy (AFM), Fourier transform infrared (FTIR), Raman, and X-ray photoelectron spectroscopy (XPS) were used to characterize the surface morphology, bonding structure, and composition of the deposited films. The influence of deposition temperature in the range 25–400 °C on the composition and bonding structure of carbon nitride films was systematically studied. AFM images show that surface roughness and cluster size increase monotonically with deposition temperature. XPS, FTIR, and Raman spectra indicate directly the existence of CN, CN, and CN bonds in the deposited films. The increase of deposition temperature results in a drastic decrease in the N/C ratio, the content of CN bond and N atoms bonded to sp³ C atoms, in addition to the increase in the content of disorder sp² C atoms and N atoms bonded to sp² C atoms in the deposited films. Raman spectra show that the intensity ratio of D peak over G peak increases with increasing deposition temperature to 200 °C, then decreases with the further increase of deposition temperature, which results from the continuous growth of sp² cluster in the films.     

Hardness of nanocomposite a-C:Si films deposited by magnetron sputtering

Hydrogen-free a-C:Si films with Si concentration from 3 to 70 at.% were prepared by magnetron co-sputtering of pure graphite and silicon at room temperature. Mechanical properties (hardness, intrinsic stress), film composition (EPMA and XPS) and film structure (electron diffraction, Raman spectra) were investigated in dependence on Si concentration, substrate bias and deposition temperature. The film hardness was maximal for ∼ 45 at.% of Si and deposition temperatures 600 and 800 °C. Reflection electron diffraction indicated an amorphous structure of all the films. Raman spectra showed that the films in the range of 35–70 at.% of Si always contain three bands corresponding to the Si, SiC and C clusters. Photoelectron spectra showed dependency of Si–C bond formation on preparation conditions. In the films close to the stoichiometric SiC composition, the surface and sub-surface carbon atoms exhibited dominantly sp³ bonds. Thus, the maximal hardness was observed in nanocomposite a-C:Si films with a small excess of carbon atoms.     

Changes in chemical bonding of diamond-like carbon films by atomic-hydrogen exposure

We have deposited unhydrogenated diamond-like carbon (DLC) films on Si substrate by pulsed laser deposition using KrF excimer laser, and investigated the effects of atomic-hydrogen exposure on the structure and chemical bonding of the DLC films by photoelectron spectroscopy (PES) using synchrotron radiation and Raman spectroscopy. The fraction of sp³ bonds at the film surface, as evaluated from C1s spectra, increased at a substrate temperature of 400 °C by atomic-hydrogen exposure, whereas the sp³ fraction decreased at 700 °C with increasing exposure time. It was found that the sp³ fraction was higher at the surfaces than the subsurfaces of the films exposed to atomic hydrogen at both the temperatures. The Raman spectrum of the film exposed to atomic hydrogen at 400 °C showed that the clustering of sp² carbon atoms progressed inside the film near the surface even at such a low temperature as 400 °C.     

Substrate temperature effects on the microhardness and adhesion of diamond-like thin films

Diamond-like films were deposited on silicon substrates by r.f. plasma-enhanced chemical vapor deposition from gas methane. In this study, the substrate temperature, T_S, was varied in a wide range from 20 to 370°C while maintaining fixed other important process parameters such as r.f. power (70 W) or pressure (2.5 Pa). The increase of T_S causes an increase of the sp²/(sp²+sp³) bonded carbon ratio and a decrease of the hydrogen content. These changes produce a great modification of the mechanical properties: microhardness, friction coefficient and adhesion. The variations of mechanical properties with T_S correlate well with the sp²/(sp²+sp³) bonded carbon ratio and the hydrogen content in the films showing a gradual transformation of the diamond-like structure into a more sp²-rich one.     

Effect of structure of carbon films on their tribological properties

A comparative study of the tribological properties of a library of different carbon forms is presented. The library includes hydrogen free and hydrogenated carbon films with different bonding (CC, CH, different sp³ fractions) and structure configurations (amorphous, graphitic) leading to a wide range of densities and hardness. Reference samples (Si substrates, thermally evaporated amorphous carbon, graphitic foil) were studied as well. The tribological properties were measured using a reciprocal sliding tribometer under humid (50% RH) and dry (5% RH) air conditions. Friction coefficients were measured versus the number of sliding cycles and the wear was studied using optical profilometry and imaging as well as SEM.The friction and wear performance of the carbon films were found to depend on both the structure and the ambient conditions. Hydrogen free films have friction coefficients < 0.1 for 80% sp³ bonded films and > 0.1 for 100% sp² bonded films. The wear resistance of the hydrogen free films (much larger for sp³ bonded films) significantly decreases under dry conditions. In contrast, hydrogenated films show reduction in friction with decreasing humidity (from 0.2 under 50% RH to < 0.1 under 5% RH). The wear resistance of hydrogenated films is larger for dry and smaller for humid conditions.     

A study of hard diamond-like carbon films in mid-frequency dual-magnetron sputtering

A series of hydrogen-free diamond-like carbon (DLC) films were deposited by a mid-frequency dual-magnetron sputtering under basic conditions of Cr and C target power density between 6 and 18 W/cm², bias voltage in a range of − 100 V to − 200 V, and a pure argon atmosphere. Microstructure, microhardness, adhesion, friction and wear properties were investigated for the DLC films to be used as protective films on cutting tools and forming dies, etc. The DLC films exhibited some combined superior properties: high hardness of 30–46 GPa, good adhesion of critical load of 50–65 N, and friction coefficient about 0.1 in air condition. Properties of the magnetron-sputtered carbon films showed a strong dependence on flux and energy of ion bombardment during growth of the films.     

Optical properties and new carbon forms of sputtered amorphous carbon films

Amorphous carbon films were deposited by r.f. magnetron sputtering at various bias voltages V_b applied on Si substrate. We studied the optical properties of the films using in situ spectroscopic ellipsometry (SE) measurements in the energy region 1.5–5.5 eV. From the SE data analysis the dielectric function ε(ω) of the a-C films was obtained, providing information about the electronic structure and the bonding configuration of a-C films. Based on the SE data the films are classified in three categories. In Category I and II belong the films developed with V_b≥0 V (rich in sp² bonds) and −100≤V_b<0 V (rich in sp³ bonds), respectively. The dielectric function of the films belonging in these two categories can be described with two Lorentz oscillators located in the energy range 2.5–5 eV (π–π^*) and 9–12 eV (σ–σ^*). A correlation was found between the oscillator strength and the sp² and sp³ contents. The latter were calculated by analyzing the ε(ω) with the Bruggeman effective medium theory. In films deposited with V_b<−100 V (Category III), the formation of a new and dense carbon phase was detected which exhibits a semi-metallic optical behavior and the ε(ω) can be described with two oscillators located at ∼1.2 and ∼5.5 eV.     

Wear behaviour of hydrogen free diamond-like carbon thin films in diesel fuel at different temperatures

In the present study, super hard, hydrogen free amorphous diamond-like carbons with a high fraction of sp³ hybridised carbon were deposited by pulsed laser deposition. The tribological performance of DLC coatings was investigated by translatory oscillating relative motion of a 100Cr6 steel ball in diesel fuel or ambient air at 25 °C or 150 °C temperature. The structure of the coatings and the tribological worn surfaces were characterised by Raman spectroscopy and by scanning electron microscopy. Bio-fuel with a high fraction of unsaturated fatty acids has the potential to reduce friction in tribological systems with chemically inert DLC. Diesel blend with 10% bio-fuel reduces friction at 150 °C. If there is no diesel fuel, pre-oxidation at 450 °C for 8 h leads to the best wear resistance (↓ f & wear rate) at room temperature. Without diesel fuel, enhancement of temperature up to 150 °C during wear testing causes an increase of the coefficient of friction. Again the 450 °C pre-oxidised sample revealed the lowest friction. For this coating, Raman spectroscopy points to a small increase of the sp² CC bonds. Diesel fuel seems to promote coherent coating failure under 150 °C wear, while pre-oxidation at 450 °C support adhesive coating ablation under higher loads or cyclic loading.