GaSb太阳电池阳极氧化膜的研究

讨论了ＧａＳｂ太阳电池阳极氧人原减反射特性，利用ＡＥＳ和ＸＲＤ分析了氧化膜的组成和结构，实验制备的ＧａＳｂ太阳电池效率为５％。     

SiON／SiN太阳电池双层减反膜的性能研究

报道了用电子回旋共振化学气相沉淀积技术淀积ＳｉＯＮ／ＳｉＮ双层硅太阳电池减反膜的实验研究。用红外吸收谱，俄歇电子谱以及二次离子质谱等实验方法对薄膜的组分，结构２，界面过渡区的特性以及膜层中的氢分布进行了分析，实验表明：在制备减反射膜中，要获得较佳的减反效果，应尽量降低淀积温度，增大微波功率。     

高效非晶硅叠层太阳电池的优化设计

研究了高效ａ－Ｓｉ／ａ－Ｓｉ／ａ－Ｓｉ－ＳｉＧｅ三结太阳电池的优化设计。电流匹配是影响二端子叠层太阳电池填充因子的关键因素，在内电极的ｐ／ｎ界面外附加载流子复合是由少数载流子浓度、界面态和ｐ／ｎ界面处材料的几何因素匹配决定的。利用适当的带隙匹配和ｉ层厚度匹配来实现ａ－Ｓｉ／ａ－Ｓｉ／ａ－ＳｉＧｅ三结太阳电池结构的最佳化，同时采用改善ｎ／ｉ界面特性的缓冲层技术，获得了Ｖｏｃ＝２．４８Ｖ，Ｊｓｃ＝６．     

GaAs太阳电池帽层腐蚀研究--GaAs/AlGaAs薄膜体系的选择性腐蚀

由ｐ＋－ＧａＡｓ帽层和ｐ－ＡｌｘＧａ１－ｘＡｓ（ｘ＝０·８—０．９）窗口层构成的异质薄膜体系是ＧａＡｓ太阳电池器件中的常规结构。对该异质结构的只腐蚀ＧａＡｓ而不腐蚀ＡｌＧａＡｓ的选择性腐蚀工艺是ＧａＡｓ太阳电池制备过程中的一道关键工序。针对传统腐蚀工艺中出现的腐蚀后露出的ＡｌＧａＡｓ表面呈现彩色的问题,从改进腐蚀液配方角度,围绕通常采用的氨水－双氧水（ＮＨ４ＯＨ－Ｈ２Ｏ２）腐蚀液体系,对该问题作了深入细致的专门研究,并与柠檬酸－双氧水（Ｃ６Ｈ８Ｏ７－Ｈ２Ｏ２）和柠檬酸－柠檬酸钾－双氧水（Ｃ６Ｈ８Ｏ７－Ｋ３Ｃ６Ｈ５Ｏ７－Ｈ２Ｏ２）腐蚀液体系作对比,最终得到了较满意的氨水－双氧水－磷酸（ＮＨ４ＯＨ－Ｈ２Ｏ２－Ｈ３ＰＯ４）新腐蚀液体系。这种腐蚀液体系不仅可在较宽的溶液浓度范围内实现对高Ａｌ组分ＧａＡｓ／ＡｌＧａＡｓ异质结构的选择性腐蚀,而且也不会对露出的ＡｌＧａＡｓ外观产生明显影响     

p／i界面的缓变层对大面积（2790cm^2）a—Si：H太阳电池性能影响的研究

报道了在大面积（２７９０ｃｍ２）ｐ－ｉ－ｎ型ａ－Ｓｉ∶Ｈ异质结太阳电池ｐ／ｉ界面之间引入缓变层（ＣＧＬ∶Ｃ，ＣＧＬ∶Ｂ∶Ｃ）对电池性能影响的研究结果。实验发现，带有ＣＧＬ∶Ｃ的ａ－Ｓｉ∶Ｈ太阳电池性能的改善主要来源于开路电压的提高，带有ＣＧＬ∶Ｂ∶Ｃ的ａ－Ｓｉ∶Ｈ太阳电池性能的提高主要来源于填充因子ＦＦ的增加。提出了带有缓变层ａ－Ｓｉ∶Ｈ电池的能带模型，据此分析了ｐ／ｉ结附近载流子的复合动力学过程，从理论上解释了实验中所发现的现象。     

用于太阳集热器的sol—gel宽带SiO2减反膜

为了提高太阳集热器的集热效率,必须抑制透明盖板表面的反射,纳米多孔ＳｉＯ２薄膜可以达到宽带减反射效果。理论分析获得了优化的纳米多孔复合ＳｉＯ２宽带减反膜的光学参数,实验上通过ＴＥＯＳ水解与缩聚反应,控制不同的催化剂,反应剂配比等条件,成功获得了不同颗粒的ＳｉＯ２溶胶,制得具有折射率可调的ｓｏｌ－ｇｅｌ薄膜以及台阶折射率变化的双层纳米复合ＳｉＯ２薄膜。薄膜的光学参数采用椭偏仪和台阶仪进行测量,薄膜形     

低真空射频反应溅射Ta2O5减反射薄膜及其光伏应用

在低真空下，用射频反应溅射法在硅片和硅太阳电池上制备理想配比的非晶Ｔａ２Ｏ５减反射薄膜。测定表明，其减反射性能良好。     

快速汽相沉积法制备硅薄膜太阳电池

对在重掺杂抛光单晶硅衬底上用ＲＴＣＶＤ法形成硅薄膜太阳电池进行了研究。衬底为〈１００〉晶向ｐ＋ ＋ 型重掺硅片,电阻率为５×１０－ ３Ωｃｍ 。主要工艺过程为：在衬底上生长一层硅薄膜同时掺硼,膜厚３８μｍ ,扩磷制备ｐ－ｎ 结,背面蒸Ａｌ及Ｔｉ／Ｐｄ／Ａｇ 制背电极,正表面在扩散后生长一层ＳｉＯ２ ,前面用光刻剥离法制备Ｔｉ／Ｐｄ／Ａｇ 电极,制成的１ｃｍ ２ 太阳电池,开路电压ＶＯＣ＝ ６１２．８ｍ Ｖ,短路电流ＩＳＣ＝ ２９．３ｍ Ａ,填充因子ＦＦ＝ ０．７５７９,效率η＝ １３．６１。对一些影响电池特性的因素进行了研究,发现硅薄膜的掺杂浓度、发射层的掺杂浓度以及减反射层都对太阳电池的特性有较大影响。     

大面积单结a—Si：H太阳电池方阵现场稳定性的评价与测试方法

对不同工作状态的２７８７ｃｍ＾２单结集成型ａ－Ｓｉ：Ｈ太阳电池组件室外１年多的实验结果与２ｋＷａ－Ｓｉ：Ｈ太阳电池方阵现场运行４年多的结果进行比较，说明组件或方阵在室外运行１年后，经过正常衰退阶段，其性能趋于稳定。同时给出了大功率ａ－Ｓｉ：Ｈ太阳电池方阵性能的现场测试方法。     

类 p-i-n 结构 n~ (μc-Si : H)/p(poly-Si)/p~ (poly-Si)薄膜太阳电池的热平衡态特性数值分析

通过应用Ｓｃｈａｒｆｅｔｅｒ－Ｇｕｍｍｅｌ解法，数值求解Ｐｏｉｓｓｏｎ方程，对热平衡态ｎ＋（μｃ－Ｓｉ∶Ｈ）／ｐ（ｐｏｌｙ－Ｓｉ）／ｐ＋（ｐｏｌｙ－Ｓｉ）薄膜太阳电池进行计算机数值模拟。说明类ｐ－ｉ－ｎ结构设计使电池获得了较高的短路电流ＪＳＣ，而中间层ｐ（ｐｏｌｙ－Ｓｉ）的掺杂有利于提高电池的短波量子效率特性，还讨论了ｎ＋（μｃ－Ｓｉ∶Ｈ）和ｐ＋（ｐｏｌｙ－Ｓｉ）等层厚度对光生载流子收集的影响。     

晶体硅太阳电池钝化工艺的研究

采用热氧化法在多晶硅及单硅大面积太阳电池上生长二氧化硅钝化膜，结合丝网印刷制电极及二氧化钛减反射膜工艺，使太阳电池的扩散长度及效率得到改进。也进行了在多晶硅太阳电池上采用等离子沉积法制作氮化硅减反射膜的研究。     

Investigations of solar cells with porous silicon as antireflection layer

The possibility of using porous silicon layers as antireflection coating instead of the antireflection coatings in common silicon solar cells was investigated. A technology for the manufacture of porous silicon antireflection layers was developed. The comparison of the photovoltaic and optical characteristics of investigated samples of solar cells with ZnS antireflection coating and with porous silicon antireflection coating is presented. It is shown that the formation of the porous layer under optimal technological regimes leads to significant improvement of the main photovoltaic parameters–short-circuit current and open-circuit voltage.     

Screen printed titanium oxide and PECVD silicon nitride as antireflection coating on silicon solar cells

Silicon nitride and titanium oxide coatings have been used to reduce the reflection losses from silicon solar cells. Both 100-mm-diameter circular and 100 × 100 mm pseudo-square single crystalline silicon solar cells have been used in the present studies. More than 27% enhancement in the short circuit current has been demonstrated in polished cells using screen printed titanium oxide antireflection coating. Solar cells made from textured silicon wafers were used for plasma enhanced CVD grown silicon nitride antireflection coating on them. In these cells more than 23% enhancement in short-circuit current has been observed after silicon nitride antireflection coating.     

High performance anti-reflection coatings for broadband multi-junction solar cells

The success of bandgap engineering has made high-efficiency broadband multi-junction solar cells possible with photo-response out to the band edge of germanium. Modeling has been conducted which suggests that current double-layer antireflection coating technology is not adequate for these devices in certain cases. Approaches for the development of higher performance antireflection coatings are examined. A new antireflection coating structure based on the use of Herpin equivalent layers is presented. Optical modeling of the new AR coating suggests a decrease in the solar weighted reflectance of 2.5% absolute over typically used double-layer antireflection coatings. This structure requires no additional optical material development and characterization because no new optical materials are necessary. Experimental results and a sensitivity analysis are presented.     

AlxGa1-xAs/GaAs太阳电池MgF2/ZnS双层减反射膜的研究

介绍了在AlxGa1-xAs/GaAs太阳电池上制备MgF2/ZnS双层减反射膜的研究工作,引入了有效反射率R,并通过使Re极小来实现减反射膜的优化设计,考虑了MgF2/ZnS双层减反射膜与窗口层的耦合,实验上获得了良好的减反射膜,提高了AlxGa1-xAs/GaAs太阳电池的短路电流和效率,表明用Re极小化来设计减反射膜是合理的。     

A review on PV cells and nanocomposite‐coated PV systems

Solar radiation can be converted into electrical energy and generate electric power that can be utilized in multiple ways. The technological improvements have provided enormous solutions to the mankind for utilizing the solar energy although photovoltaic's (PV) by consuming sunlight. Photovoltaic is popularly known by the process of converting light to electricity. The current estimated growth by producing global power around 368 GW in 2017 and projecting 3000 to 10 000 GW by 2030. Looking at all the available solar cells, it has been observed that the dye‐sensitized solar cell (DSSC) when compared to mono‐Si or poly‐Si has been effective in its performance and also reduces production cost to a great extent. The power conversion efficiency (PCE) of DSSC has reached to a better extent and been discussed in the paper. There are other mechanisms through which the efficiency can be improved like applying the antireflection coating. Reflection is a usual phenomenon that happens when light incident from one medium to another varies in refractive index. This reflection is one of the important reasons for the loss of power in the PV Cell. So to improve the PCE, the Mono‐Si or DSSC PV Cells can be applied with a thin film antireflection coating by the nanocomposite film consisting of single‐ or multi‐wall carbon nanotubes with TiO₂ and other efficient nanoparticles. This paper discusses on different kinds of nanocomposite materials, and their functionalities has been clearly given. Remarkable improvements have been recorded in the last 1 year by applying the antireflection coating; the PCE has further been increased enormously when compared to the uncoated solar cell for both DSSC and Mono‐Si PV cells.     

Computations of the optical properties of metal/insulator-composites for solar selective absorbers

Solar selective absorbers are very useful for photo thermal energy conversion. The absorbers normally consist of thin films (mostly composite), sandwiched between the antireflection layer and (base layer on) a metallic substrate, selectively absorbing in the solar spectrum and reflecting in the thermal spectrum. The optical performance of the absorbers depends on the thin film design, thickness, surface roughness and optical constants of the constituents. The reflectivity of the underlying metal and porosity of the antireflection coating plays important roles in the selectivity behavior of the coatings. Computer simulations, applying effective medium theories, have been used to investigate the simplest possible design for composite solar selective coatings. A very high solar absorption is achieved when the coating has a non-uniform composition in the sense that the refractive index is highest closest to the metal substrate and then gradually decreases towards the air interface. The destructive interference created in the visible spectrum has increased the solar absorption to 98%. This paper also addresses the optical performance of several metals/dielectric composites like Sm, Ru, Tm, Ti, Re, W, V, Tb, Er in alumina or quartz on the basis of their refractive indices. The antireflection coating porosity and surface roughness has been analyzed to achieve maximum solar absorption without increasing the thermal emittance. Antireflection layer porosity is a function of dielectric refractive index and has nominal effect on the performance of the coating. While, up to the roughness of 1×10⁻⁷ m RMS, the solar absorption increases and for higher roughness, the thermal emittance increases only.     

High-density inductively coupled plasma chemical vapor deposition of silicon nitride for solar cell application

The silicon nitride films were deposited by means of high-density inductively coupled plasma chemical vapor deposition in a planar coil reactor. The process gases used were pure nitrogen and a mixture of silane and helium. Passivated by silicon nitride, solar cells show efficiency above 13%. Strong H-atom release from the growing SiN film and Si–N bond healing are responsible for the improved electrical and passivation properties of SiN film. This paper presents the optimal refractive index of SiN for single layer antireflection coating as well as double layer antireflection coating in solar cell applications.     

Single-material TiO2 double-layer antireflection coatings

This paper demonstrates that a double-layer antireflection (DLAR) coating can be fabricated using a single material, titanium dioxide (TiO₂). The optical properties of the top and bottom TiO₂ layers were controlled by varying the deposition and sintering conditions, resulting in a range of refractive indices, n=1.73–2.63 at 600 nm. Weighted average reflectances of 6.5% (measured) and 7.0% (calculated) were achieved for TiO₂ DLAR coatings in air and under glass, respectively. When implemented in a high-efficiency silicon solar cell, a short-circuit current density increase of ΔJ_sc=2.5 mA/cm² can be expected for an optimised TiO₂ DLAR coating when compared to a commercial TiO₂ single-layer antireflection coating.