点阵式LCD控制驱动电路的测试方法

在LCD显示器件广泛发展与应用的今天,LCD控制驱动电路作为液晶显示器的重要部件,需求量也日益增大。从而使得对LCD控制驱动电路的测试成为液晶显示效果的必然保证。点阵式LCD控制驱动电路的测试除了需要进行常规测试项的测试外,因其自身的特点,还具有一些特殊的测试项,同时也对测试系统的测试能力提出了更高要求。文章主要介绍了使用自动测试系统对点阵式LCD控制驱动电路测试的方法,该测试方法对于LCD显示控制驱动电路的测试具有普遍意义。     

基于电流源控制的CNT-FED驱动电路设计

本文为了实现碳纳米管场致发射显示器（CNT-FED）的产品化,采用CNT-FED阴极电流源驱动方法,研究了CNT-FED亮度的均匀性和非线性调节问题。从分立元件驱动电路设计原理出发,采用了高稳定性阴极电流源像素驱动电路,将电流源驱动电路预先制作在硅基底上,再利用室温下生长碳纳米管（CNT）的方法,将CNT发射体和电流源驱动电路集成在同一硅衬底上,最终实现了集成CNT-FED驱动电路的设计。该驱动电路解决了CNT-FED亮度均匀性和非线性调节问题,对场射显示器驱动电路的应用研究和CNT-FED驱动电路的集成化具有参考意义。本文网络版地址：http：//www.eepw.com.cn/article/276357.htm     

基于ARM7的LCD显示电压示波系统的设计

本设计以ARM7微处理器为核心,采用ARM7中的高速A/D为测压单元,提高了数据传输的可靠性;数据结果通过LCD实时显示,显示方式友好直观;采用RAM和UART分别存储和传输数据,实现了监测数据的长期存储和与PC的通信传输.采用31/2位或41/2位段位式LCD液晶数码显示器的仪表已不罕见,但段位式LCD显示器的功能较局限.对于多功能的智能仪表,采用点阵式LCD液晶显示模块,可提供更为丰富灵活的显示内容.点阵式LCD显示模块是一种集显示、控制与驱动与一体的显示器件.为了简化电路,充分发挥ARM的性能,采用了320×240的16级灰度LCD.     

增强型彩色FED驱动电路的研究

探讨了CNT-FED驱动电路的一般性结构,给出了彩色FED驱动系统的硬件实现,并在原有硬件模块的基础上增加色度变换模块,从而使变换后的RGB信号更适合于平板显示,具有色彩增强的效果。     

利用可编程器件实现点阵式LED显示

主要介绍了一种应用VHDL语言来设计的可编程逻辑器件CPLD/FPGA,实现对点阵式LED显示屏的控制。设计出的数字逻辑电路在功能上实现了对点阵式LED的驱动以及行和列的扫描,摆脱了传统的以单片机硬件以及软件程序结合的方式,只用一个单一的芯片就能够完全独立地对点阵式LED进行字体以及图形的显示控制。这样就把所有的硬件软件改为一块集成的芯片,大大简化了设计降低了成本。设计中采用的可编程芯片是由美国ALTERA公司生产的MAX7128SLC84-15,开发编译软件采用的是QUARTUSII5.0。     

CNT-FED的新技术与新产品

对CNT阴极的制作新技术作了说明，对于由这些新技术制作的CNT-FED器件也作了介绍。     

单片机驱动SED1520显示动态曲线的编程方法

点阵式液晶显示器是近年来发展起来的一种新型显示器件，可显示任意字符、波形曲线或图形。其控制器使之具有功能强、控制方便等优点，克服了笔段式液晶显示器显示固定无法变化的缺陷。本文以单片机８０３１与点阵式液晶显示控制器ＳＥＤ１５２０的接口为例，讨论用于动态显示波形曲线的编程方法。     

点阵式LCD在汉字显示中的应用

文章主要介绍了在新型显示器件点阵式ＬＣＤ上显示１６×１６点阵汉字的基本原理以及实现方法，给出了系统结构的参考电路及软件设计框图。     

高亮度三极CNT-FED器件的研制

采用钠钙玻璃作为衬底材料,在常规丝网印刷工艺的基础上,设计制作了新型栅极-阴极组控制结构,实现了单条栅极对三个碳纳米管(CNT)阴极电子发射的成组控制。借助玻璃粉封接技术,研究了三极结构场致发射显示器件(FED)的封装和测试。结果表明,CNT-FED器件显示亮度高,阳极电压为1.6kV时,其最大亮度达710cd/m2;栅控特性良好,开启电压约为315V;显示的静态字符发光图像不仅证实了该器件的矩阵寻址功能已经实现,且具有良好的图形显示功能。     

单片机驱动SED1520显示动态曲线的编程方法

点阵式液晶显示器是近年来发展起来的一种新型显示器件，可显示任意字符，波形曲线或图形，其控制器使之具有功能强，控制方便等优点，克服笔段式液晶显示器显示固定无法变化的缺陷。本文以单片机８０３１与点阵式液晶显示控制器ＳＥＤ１５２０的接口为例，讨论用于动态显示波形曲线的编程方法。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.