Intergranular fracture by slip/grain boundary interaction

The role of interaction between slip dislocations and [110] tilt boundaries in crack nucleation has been analyzed for the face-centered cubic (fcc) and L1₂ structures. Dislocation absorption into the boundaries is orientation-dependent according to the elastic anisotropy. Whenthe transfer of slip across the boundary is impeded, cleavage fracture is predicted on the (1ˉ11) plane. Intergranular fracture can be initiated when a symmetric double pileup of primary slip dislocations from both sides of the boundary occurs simultaneously. The available experimental data on slip/grain boundary (GB) interaction and intergranular fracture are in good agreement with the present predictions. This paper is based on a presentation made in the symposium “Interface Science and Engineering“ presented during the 1988 World Materials Congress and the TMS Fall Meeting, Chicago, IL, September 26–29, 1988, under the auspices of the ASM-MSD Surfaces and Interfaces Committee and the TMS Electronic Device Materials Committee.     

Stress corrosion cracking of copper bicrystals with 〈110〉-Tilt ∑3, ∑9, and ∑11 coincident site lattice boundaries

The stress corrosion cracking (SCC) behavior of copper bicrystals with 〈HO〉-tilt ∑3(111), ∑9(221), and ∑11(311) coincident site lattice (CSL) boundaries was investigated. Stress corrosion cracking tests were carried out in 1 N NaNO₂ aqueous solution at 303 ±2 K using a slow strain rate technique (SSRT). Transgranular SCC occurred along the primary slip traces on the top surface of the bicrystal having a ∑3(111) coincidence boundary. No cracks initiated on the grain boundary except for very small and shallow corrosion pits. In contrast, for the bicrystals with ∑9(221) or ∑11(311) coincidence boundaries, corrosion pits and cracks initiated on the grain boundary and propagated into the crystal interior along {110} traces, which are almost perpendicular to the tensile axis. The SCC behavior is closely related to the activated slip systems and the degrees of crystal rotation owing to deformation. Susceptibility to intergranular SCC is affected by the angle between the Burgers vector of the primary slip system and the grain boundary plane. The susceptibility of the ∑23(111) boundary to SCC is remarkably low in comparison with the other two types of grain boundaries. Y. Nakazawa, formerly Graduate Student, Department of Mechanical Engineering, Doshisha University This paper is based on a presentation made in the symposium “Interface Science and Engineering” presented during the 1988 World Materials Congress and the TMS Fall Meeting, Chicago, IL, September 26–29, 1988, under the auspices of the ASM-MSD Surfaces and Interfaces Committee and the TMS Electronic Device Materials Committee.     

The evolution of microstructure in Al-2 Pct Cu thin films: Precipitation,dissolution, and reprecipitation

The precipitation, dissolution, and reprecipitation processes of Al₂Cu (θ phase) in Al-2 wt pct Cu thin films were studied. The films were characterized in the as-deposited condition, after annealing at 425 °C for 35 minutes, and after rapid thermal annealing (RTA) at 345 °C, 405 °C, and 472 °C. In the as-deposited samples, the precipitates had a fine even distribution throughout the thin film both at aluminum grain boundaries and within the aluminum grains. Annealing below the solvus temperature caused the grain boundary precipitates to grow and precipitates within the center of aluminum grains to diminish. Annealing above 425 °C caused the θ-phase precipitates to dissolve. Upon cooldown, the θ phase nucleated at aluminum grain boundaries and triple points in the form of plates.In situ heating and cooling experiments documented this process in real time. Analytical microscopy revealed that there is a depletion of copper at the aluminum grain boundaries in regions free of precipitates. The θ-phase precipitates nucleated and grew at the grain boundariesvia a collector plate mechanism and drew copper from the areas adjacent to the aluminum grain boundaries. This paper is based on a presentation made in the symposium “Interface Science and Engineering” presented during the 1988 World Materials Congress and the TMS Fall Meeting, Chicago, IL, September 26–29, 1988, under the auspices of the ASM-MSD Surfaces and Interfaces Committee and the TMS Electronic Device Materials Committee.     

Atomic structure and energy of ∑ = 5 tilt boundaries in gold

The atomic structure of 2 = 5(θ = 36.9 deg) [001] tilt boundaries in gold has been investigated by high-resolution electron microscopy (HREM). Image simulations and experimental conditions for observing grain boundary atomic structure in gold are presented. Two preferred orientations corresponding to symmetric {310} and asymmetric {430}//{100} inclinations have been observed frequently. A single symmetric {210} inclination has also been observed. The atomic structures of these three boundaries are presented. An average ratio of grain boundary to surface energy, γ_gb/γ_s, of 0.62 has been measured at 200 °C. Unique atomic structures are observed for {310}, {430}//{100}, and {210} inclinations, and multiplicities in atomic structures have not been detected. Interfacial volume expansion of these interfaces is presented and compared to computational models. This paper is based on a presentation made in the symposium “Interface Science and Engineering” presented during the 1988 World Materials Congress and the TMS Fall Meeting, Chicago, IL, September 26–29, 1988, under the auspices of the ASM-MSD Surfaces and Interfaces Committee and the TMS Electronic Device Materials Committee.     

Atomic-scale modeling of dislocations and related properties in the hexagonal-close-packed metals

Metals with the hcp crystal structure have a wide variety of mechanical and physical properties, and understanding the links between atomic processes, microstructure, and properties can open the way for new applications. Computer modeling can provide much of the information required. This article reviews recent progress in atomic-scale computer simulation in three important areas. The first is the core structure of dislocations responsible for the primary slip modes, where modeling has revealed the variety of core states that can arise in pure, elemental metals and ordered alloys. While most research has successfully employed many-body, central-force interatomic potentials, they are inadequate for metals which have an unfilled d-electron band, such as α-Ti and α-Zr, and the resulting noncentral character of the atomic bonding is shown to have subtle yet significant effects on dislocation properties. Deformation twinning is an important process in plasticity of the hcp metals, and modeling has been used to investigate the factors that control the structure and mobility of twinning dislocations. Furthermore, simulation shows that twinning dislocations are actually generated, in some cases, following the interaction of crystal dislocations with twin boundaries; this can lead to the very mobile boundaries observed experimentally. The final area concerns the nature and properties of the defects created by radiation damage. Computer simulation has been used to determine the number and arrangement of defects produced in primary, displacement-cascade damage in several hcp metals. The number is similar to that found in cubic metals and is considerably smaller than that expected from earlier models. Many self-interstitial atoms cluster in cascades to form highly glissile dislocation loops, and, so, contribute to two-dimensional material transport in damage evolution. This article is based on a presentation made in the symposium entitled “Defect Properties and Mechanical Behavior of HCP Metals and Alloys” at the TMS Annual Meeting, February 11–15, 2001, in New Orleans, Louisiana, under the auspices of the following ASM committees: Materials Science Critical Technology Sector, Structural Materials Division, Electronic, Magnetic & Photonic Materials Division, Chemistry & Physics of Materials Committee, Joint Nuclear Materials Committee, and Titanium Committee.     

Interphase boundary structures associated with diffusional phase transformations in Ti-base alloys

Interphase boundary structures generated during diffusional transformations in Ti-base alloys, especially the proeutectoid α and eutectoid reactions in a β-phase matrix, are reviewed. Partially coherent boundaries are shown to be present whether the orientation relationship between precipitate and matrix phases is rational or irrational. Usually, these structures include both misfit dislocations and growth ledges. However, grain boundary α allotriomorphs (GBA’s) do not appear to develop misfit dislocations at partially coherent boundaries. Evidently, these dislocations can be replaced by ledges which provide a strain vector in the plane of the interphase boundary. The bainite reaction in Ti-X alloys produces a mixture of eutectoid α and eutectoid intermetallic compound. Both eutectoid phases are partially coherent with theβ matrix, and both grow by means of the ledge mechanism, though unlike pearlite the ledge systems of the two phases are structurally independent. Even after deformation and recrystallization, the boundaries between the eutectoid phases and theβ matrix, as well as between these phases, are partially coherent. Titanium and zirconium hydrides have partially coherent interphase boundaries with respect to theirβ matrix. The recent observation of ledgewise growth of γ TiH within situ high-resolution transmission electron microscopy (HRTEM) suggests that, repeated suggestions to the contrary, these hydrides do not grow by means of shear transport of Ti atoms at rates paced by hydrogen diffusion. This paper is based on a presentation made in the symposium “Interfaces and Surfaces of Titanium Materials” presented at the 1988 TMS/AIME fall meeting in Chicago, IL, September 25–29, 1988, under the auspices of the TMS Titanium Committee.     

Dislocation structures ahead of advancing cracks

Previous transmission electron microscope (TEM) observations of the dislocation structure in the vicinity of a crack suggested that the region immediately ahead of a crack is devoid of dislocations. In the present paper, the results ofin situ TEM deformation experiments in numerous systems are described. The dislocation configurations are generally complex, with dislocations extending from the crack tip(i.e., no dislocation-free zone (DFZ)) and forming complex arrangements in the plastic region in front of the crack tip. Crack advance was accompanied by the emission of dislocations from both the crack tip and nearby sources. These observations are summarized, and the theory of dislocation configurations in front of a crack is reconsidered. This paper is based on a presentation made in the symposium “Interface Science and Engineering” presented during the 1988 World Materials Congress and the TMS Fall Meeting, Chicago, IL, September 26–29, 1988, under the auspices of the ASM-MSD Surfaces and Interfaces Committee and the TMS Electronic Device Materials Committee.     

Twin boundaries in C54-TiSi2

A large-grained microstructure of C54-TiSi₂ has been produced by rapid thermal annealing of Ti/Si thin film couples. Unlike the metastable C49-TiSi₂ phase, which is heavily faulted, the C54-TiSi₂ is relatively fault-free. We have, however, observed for the first time the presence of twins in C54-TiSi₂. The presence of twinning is explained by an atomic model for polytypism in this structure. The faceting of twin boundaries and the dissociation of grain boundaries have also been observed for the first time in C54-TiSi₂. It is proposed that the latter observations are related to boundary migration. This paper is based on a presentation made in the symposium “Interface Science and Engineering” presented during the 1988 World Materials Congress and the TMS Fall Meeting, Chicago, IL, September 26–29, 1988, under the auspices of the ASM-MSD Surfaces and Interfaces Committee and the TMS Electronic Device Materials Committee.     

Bicrystal studies of diffusion-induced grain boundary migration in Cu/Zn

In this article, we present results of systematic studies of the effects of grain boundary parameters upon diffusion-induced grain boundary migration (DIGM). It is shown that grain boundary velocity, solute penetration depth, concentration of deposited solute, and activation energy are all strongly and reproducibly dependent upon the grain boundary parameters. The effects are also somewhat different in the cases of symmetrical and asymmetrical boundaries, indicating the importance of the boundary inclination. It is shown that the observed differences can be rationalized in terms of the variations of the driving force for DIGM and the grain boundary mobility. Fu-Sen Chen and Girish Dixit, formerly Graduate Students, Department of Materials Science and Engineering, State University of New York at Stony Brook This paper is based on a presentation made in the symposium “Interface Science and Engineering” presented during the 1988 World Materials Congress and the TMS Fall Meeting, Chicago, IL, September 26–29, 1988, under the auspices of the ASM-MSD Surfaces and Interfaces Committee and the TMS Electronic Device Materials Committee.     

Nanocrystalline metals prepared by high-energy ball milling

This is a first systematic report on the synthesis of completely nanocrystalline metals by high-energy deformation processes. Pure metals with body-centered cubic (bcc) and hexagonal close-packed (hcp) structures are subjected to ball milling, resulting in a decrease of the average grain size to ≈9 nm for metals with bcc and to ≈13 nm for metals with hcp crystal structures. This new class of metastable materials exhibits an increase of the specific heat up to 15 pct at room temperature and a mechanically stored energy determined as up to 30 pct of the heat of fusion after 24 hours of high-energy ball milling. The grain boundary energy as determined by calorimetry is higher than the energy for fully equilibrated high-angle grain boundaries. E. Hellstern, formerly Research Associate, California Institute of Technology This paper is based on a presentation made in the symposium “Interface Science and Engineering” presented during the 1988 World Materials Congress and the TMS Fall Meeting, Chicago, IL, September 26–29, 1988, under the auspices of the ASM-MSD Surfaces and Interfaces Committee and the TMS Electronic Device Materials Committee.     

Slip transfer and dislocation nucleation processes in multiphase ordered Ni-Fe-Al alloys

Directionally solidified (DS) alloys with the nominal composition Ni-30 at. pct Fe-20 at. pct Al having eutectic microstructures were used to study slip transfer across interphase boundaries and dislocation nucleation at the interfacial steps. The slip transfer from the ductile second phase, γ(fcc) containing ordered γ′(L1₂) precipitates, to the ordered β(B2) phase and the generation of dislocations at the interface steps were interpreted using the mechanisms proposed for similar processes involving grain boundaries in polycrystalline single-phase materials. The criteria for predicting the slip systems activated as a result of slip transfer across grain boundaries were found to be applicable for interphase boundaries in the multiphase ordered Ni-Fe-Al alloys. The potential of tailoring the microstructures and interfaces to promote slip transfer and thereby enhance the intrinsic ductility of dislocation-density-limited intermetallic alloys is discussed.     

Grain-size dependence of the flow stress of Cu from millimeters to nanometers

Data in the literature on the effect of grain size (d) from millimeters to nanometers on the flow stress of Cu are evaluated. Three grain-size regimes are identified: regime I, d>∼10⁻⁶ m; regime II, d ≈10⁻⁸ to 10⁻⁶ m; and regime III, d<∼10⁻⁸ m. Grain-size hardening occurs in regimes I and II; grain-size softening occurs in regime III. The deformation structure in regime I consists of dislocation cells; in regime II, the dislocations are mostly restricted to their slip planes; in regime III, computer simulations indicate that dislocations are absent and that deformation occurs by the shearing of grain-boundary atoms. The transition from regime I to II occurs when the dislocation cell size becomes larger than the grain size, and the transition from regime II to III occurs when the dislocation spacing due to elastic interactions becomes larger than the grain size. The rate-controlling mechanism in regime I is concluded to be the intersection of dislocations; in regime II, it is proposed to be grain-boundary shear promoted by the pileup of dislocations; in regime III, it appears to be grain-boundary shear by the applied stress alone. This article is based on a presentation given in the symposium “Dynamic Deformation: Constitutive Modeling, Grain Size, and Other Effects: In Honor of Prof. Ronald W. Armstrong,” March 2–6, 2003, at the 2003 TMS/ASM Annual Meeting, San Diego, California, under the auspices of the TMS/ASM Joint Mechanical Behavior of Materials Committee.     

Transmission electron microscopy investigation of 〈c+a〉 dislocations in Mg and α-solid solution Mg-Li alloys

The ductility of Mg alloys is limited due to a shortage of independent slip systems. In particular, c-axis compression cannot be accommodated by any of the easy slip or twinning modes. Basal-textured samples of pure Mg and Mg-15 at. pct Li were examined for the presence of 〈c+a〉 dislocations by post-mortem transmission electron microscopy (TEM) after a small deformation, which forced the majority of grains to compress nearly parallel to their c-axes. A higher density and more uniform distribution of 〈c+a〉 dislocations is found in the Li-containing alloy. Because the 1/3〈11 3〉 {11 } pyramidal slip mode offers five independent slip systems, it provides a satisfying explanation for the enhanced ductility of α-solid solution Mg-Li alloys as compared to pure Mg. The issue of 〈c+a〉 dislocation dissociation and decomposition remains open from an experimental point of view. Theoretically, the most feasible configuration is a collinear dissociation into two 1/2〈c+a〉 partial dislocations, with an intervening stacking fault on the glide plane. It is speculated that Li additions may lower the fault’s energy and, thereby, increase the stability of this glissile configuration. This article is based on a presentation made in the symposium entitled “Defect Properties and Mechanical Behavior of HCP Metals and Alloys” at the TMS Annual Meeting, February 11–15, 2001, in New Orleans, Louisiana, under the auspices of the following ASM committees: Materials Science Critical Technology Sector, Structural Materials Division, Electronic, Magnetic & Photonic Materials Division, Chemistry & Physics of Materials Committee, Joint Nuclear Materials Committee, and Titanium Committee.     

Fatigue Crack Initiation In WASPALOY at 20 °C

In two WASPALOY specimens, the orientations of grains that initiated fatigue cracks and adjacent ograins were measured using electron backscattered diffraction patterns (EBSP). Crystallographic relationships were found for crack initiating regions that resulted in slip transmission across areas larger than the initiating grain, and the initiating grain was usually larger than average. A similar evaluation of control areas on each specimen found that there was much less likelihood of slip transmission across grain boundaries. Schmid factors (SFs) were also evaluated. It is concluded that the reason that fatigue cracks formed at these locations was due to the lower stress required for slip initiation in these clusters of grains oriented for slip transmission across grain boundaries. Many of the cracks initiated within grain boundaries. A detailed crystallographic analysis of the adjacent grains suggests criteria for intergranular (IG) crack initiation. This article is based on a presentation given in the symposium entitled “Deformation and Fracture from Nano to Macro: A Symposium Honoring W.W. Gerberich’s 70th Birthday,” which occurred during the TMS Annual Meeting, March 12–16, 2006, in San Antonio, Texas, and was sponsored by the Mechanical Behavior of Materials and Nanomechanical Behavior Committees of TMS.     

Equal-channel angular extrusion of beryllium

The equal-channel angular extrusion (ECAE) technique has been applied to a powder metallurgy (P/M) source Be alloy. Extrusions have been successfully completed on Ni-canned billets of Be at approximately 425 °C. No cracking was observed in the billets, and significant grain refinement was achieved. In this article, microstructural features and dislocation structures are discussed for a single-pass extrusion, including evidence of 〈c〉 and 〈c+a〉 dislocations. Significant crystallographic texture developed during ECAE, which is discussed in terms of this unique deformation processing technique and the underlying physical processes which sustain the deformation. This article is based on a presentation made in the symposium entitled “Defect Properties and Mechanical Behavior of HCP Metals and Alloys” at the TMS Annual Meeting, February 11–15, 2001, in New Orleans, Louisiana, under the auspices of the following ASM committees: Materials Science Critical Technology Sector, Structural Materials Division, Electronic, Magnetic & Photonic Materials Division, Chemistry & Physics of Materials Committee, Joint Nuclear Materials Committee, and Titanium Committee.     

Transmission electron microscopy investigation of interfaces in a two-phase TiAl alloy

The atomic structures of the γ/α₂ and γ/γ_T interfaces in a TiAl alloy were investigated using conventional and high-resolution transmission electron microscopy (TEM) in order to understand the growth mechanisms and deformation behavior of the two-phase alloy. The results show that the α₂ plates grow from the γ phase by the migration of a/6〈112〉 partial dislocation ledges across the faces and that the γ/α₂ interface usually contains closely spaced arrays of interfacial dislocations. Deformation twins cut through both γ twin boundaries and α₂ plates during deformation, although slip of twinning c slocations through α₂ appears to be a difficult process. Both the γ/α₂ and γ/γ_T interfaces can be imaged and modeled at the atomic level, although slight crystal and/or beam tilt can complicate image interpretation. G.J. MAHON, formerly Research Associate with the Dep rtment of Metallurgical Engineering and Materials Science, Carnegie dellon University This paper is based on a presentation made in the syrr losium “Interfaces and Surfaces of Titanium Materials” presented at tl; 1988 TMS/AIME fall meeting in Chicago, IL, September 25–29 1988, under the auspices of the TMS Titanium Committee.     

First-principles investigation of perfect and diffuse antiphase boundaries in HCP-based Ti-Al alloys

First-principles thermodynamic models based on the cluster expansion formalism, Monte Carlo simulations, and quantum-mechanical total energy calculations are employed to compute short-range-order (SRO) parameters and diffuse-antiphase-boundary energies in hcp-based α-Ti-Al alloys. Our calculations unambiguously reveal a substantial amount of SRO is present in α-Ti-6 Al and that, at typical processing temperatures and concentrations, the diffuse antiphase boundaries (DAPB) energies associated with a single dislocation slip can reach 25 mJ/m². We find very little anisotropy between the energies of DAPBs lying in the basal and prism planes. Perfect antiphase boundaries in DO₁₉-ordered Ti₃Al are also investigated and their interfacial energies, interfacial stresses, and local displacements are calculated from first principles through direct supercell calculations. Our results are discussed in light of mechanical property measurements and deformation microstructure studies in α-Ti-Al alloys. This article is based on a presentation made in the symposium entitled “Defect Properties and Mechanical Behavior of HCP Metals and Alloys” at the TMS Annual Meeting, February 11–15, 2001, in New Orleans, Louisiana, under the auspices of the following ASM committees: Materials Science Critical Technology Sector, Structural Materials Division, Electronic, Magnetic & Photonic Materials Division, Chemistry & Physics of Materials Committee, Joint Nuclear Materials Committee, and Titanium Committee.     

Diffusion along grain and interphase boundaries in alpha Zr and Zr-2.5 wt pct Nb alloy

Diffusion parameters of Cr diffusion along the α/β interphase boundaries of a Zr-2.5 wt pct Nb alloy are presented. The conventional radiotracer technique combined with serial sectioning of the samples was applied. In the Arrhenius plot, it is possible to consider only one straight line (with Q=133 kJ/mol for 615<T<953 K) or two zones (with Q=230 kJ/mol for 773<T<953 K and Q=77 kJ/mol for 615<T<773 K). An analysis is made of these results together with previous data concerning diffusion along short circuits paths in α-Zr (grain boundaries) and Zr-2.5 wt pct Nb (interphase boundaries): Zr and Nb as the alloy component elements and Ni, Fe, and Co as other relevant impurities. Different mechanisms are proposed: a vacancy mechanism for Zr and Nb and an interstitial-like mechanism for the impurities, for both kind of boundaries. The influence on diffusion and the estimated values of the impurities segregation in the α phase are discussed in the work. This article is based on a presentation made in the symposium entitled “Defect Properties and Mechanical Behavior of HCP Metals and Alloys” at the TMS Annual Meeting February 11–15, 2001, in New Orleans, Louisiana, under the auspices of the following ASM committees: Materials Science Critical Technology Sector, Structural Materials Division, Electronic, Magnetic & Photonic Materials Division, Chemistry & Physics of Materials Committee, Joint Nuclear Materials Committee, and Titanium Committee.     

Grain size dependence of the activation parameters for plastic deformation: Influence of crystal structure,slip system,and rate-controlling dislocation mechanism

A critical review of available results on the dependence of grain size on the activation parameters for deformation, specifically, the activation volume, V*, and the thermal component of flow stress, σ*, has been carried out with a view to verifying the Armstrong prediction that identifies the Hall-Petch (H-P) intercept with the easy slip system and the H-P slope with the most difficult system in polycrystals. The influence of slip system choice is demonstrated using results on Cd and Zr. The Armstrong prediction is valid for basal slip hcp metals, such as Cd and Zn, with V* and σ* determined by the difficult pyramidal slip. For the prism slip metals such as Zr and Ti, V* and σ* are controlled by interstitial solutes and are independent of grain size. The results on Zr are used to highlight the influence of dynamic strain aging on the H-P parameters. In bcc metals, in which the Peierls-Nabarro barrier is the rate-controlling obstacle, V* and σ* are again independent of grain size. For fcc metals, correlation of the H-P slope with the cross-slip stress, predicted by the Armstrong model, has been demonstrated for a few cases. The variation of V* with grain size in Ni as reported by Narutani and Takamura (Acta Metall. Mater., 1991, vol. 227, pp. 2037–49) is newly interpreted in terms of the Armstrong model that associates the H-P intercept in fcc metals with dislocation intersections and the H-P slope with cross-slip, and provides realistic results for the activation volumes for the two processes. This article is based on a presentation given in the symposium “Dynamic Deformation: Constitutive Modeling, Grain Size, and Other Effects: In Honor of Prof. Ronald W. Armstrong,” March 2–6, 2003, at the 2003 TMS/ASM Annual Meeting, San Diego, California, under the auspices of the TMS/ASM Joint Mechanical Behavior of Materials Committee.     

Determination of dislocation densities in HCP metals from X-ray diffraction line-broadening analysis

X-Ray diffraction (XRD) line-broadening analysis has been performed on highly textured Zr-2.5Nb specimens which had been deformed in tensile tests to produce well-controlled dislocation structures. An iterative deconvolution method has been applied to extract the broadening function for the material, using as standards, a Zr single crystal and a 0 pct deformed specimen. In both cases, for specific tensile tests, a significant contribution to the basal line broadening was observed, which was clearly not directly related to the dislocation structure generated by the deformation, i.e., so-called c-component dislocations having a component of their Burgers vectors perpendicular to the basal plane. Calculations showed that the extent of basal line broadening cannot be attributed to the secondary effect of strain from a-type dislocations, i.e., dislocations with Burgers vectors parallel with the basal plane. It is concluded that most of the line broadening observed was the result of intergranular strain distributions. These distributions are most prominent for grains oriented with their c-axes perpendicular to the tensile-deformation axis and resulted in basal-plane line broadening even when there were few, if any, c-component dislocations present. This article is based on a presentation made in the symposium entitled “Defect Properties and Mechanical Behavior of HCP Metals and Alloys” at the TMS Annual Meeting, February 11–15, 2001, in New Orleans, Louisiana, under the auspices of the following ASM committees: Materials Science and Critical Technology Sector, Structural Materials Division, Electronic, Magnetic & Photonic Materials Division, Chemistry & Physics of Materials Committee, Joint Nuclear Materials Committee, and Titanium Committee.