截止频率为120GHz的晶格匹配InP基HEMT

报道了具有良好直流特性的晶格匹配InP基HEMT，器的跨导为600mS/mm，阈值电压为－1-2V，最大电流密度为500mA/mm，截止频率为120GHz.     

截止频率为218GHz的超高速晶格匹配In0.53Ga0.47As/In0.52Al0.48As高电子迁移率晶体管

报道了截止频率为218GHz的晶格匹配的In0.53Ga0.47As/In0.52Al0.48As高电子迁移率晶体管.这是迄今为止国内报道的截止频率最高的高电子迁移率晶体管.器件直流特性也很优异:跨导为980mS/mm,最大电流密度为870mA/mm.文中的材料结构和所有器件制备工艺均为本研究小组自主研制开发.     

截止频率为218GHz的超高速晶格匹配In0.53Ga0.47As/In0.52Al0.48As高电子迁移率晶体管

报道了截止频率为218GHz的晶格匹配的In0.53Ga0.47As/In0.52Al0.48As高电子迁移率晶体管,这是迄今为止国内报道的截止频率最高的高电子迁移率晶体管,器件直流特性也很优异：跨导为980mS/mm,最大电流密度为870mA/mm,文中的材料结构和所有器件制备工艺均为本研究小组自主研制开发。     

栅长90nm的晶格匹配InAlAs／InGaAs／InP HEMT

文章报道了90nm栅长的晶格匹配InP基HEMT器件。栅图形是通过80kV的电子束直写的,并采用了优化的三层胶工艺。器件做在匹配的InAlAs／InGaAs／InP HEMT材料上。当Vds=1．0V时,两指75μm栅宽器件的本征峰值跨导达到720ms／mm,最大电流密度为500mA／mm,器件的阂值电压为．0．8V,截止频率达到127GHz,最大振荡频率达到152GHz。     

InAlAs/InGaAs PHEMTs的设计及其110GHz全频段小信号建模

90-nm T-shaped gate InP-based In_0.52Al_0.48As/In_0.6Ga_0.4As pseudomorphic high electron mobility transistors were designed and fabricated with a gate-width of 2×30 μm,a source-drain space of 2.5 μm,and a source-gate space of 0.75 μm.DC,RF and small-signal model characterizations were demonstrated.The maximum saturation current density was measured to be 755 mA/mm biased at V_gs=0.6 V and V_ds=1.5 V.The maximum extrinsic transconductance was measured to be 1006 mS/mm biased at V_ds=—0.1V and V_ds=1.5 V.The extrapolated current gain cutoff frequency and maximum oscillation frequency based on S-parameters measured from 0.5 to 110 GHz were 180 and 264 GHz,respectively.The inflection point（the stability factor k=1）where the slope from-10 dB/decade（MSG） to-20 dB/decade（MAG） was measured to be 83 GHz.The smallsignal model of this device was also established,and the S-parameters of the model are consistent with those measured from 0.5-110 GHz.     

Simulated study on the InP/InGaAs DHBT under proton irradiation

A 3D model simulation of InP/InGaAs/InP DHBT is reported in this paper. A comprehensive set of built-in physical models are described, including Stratton''s hydrodynamic model, high-fields mobility model and thermionic emission model. A mixed-mode environment is required for AC simulation instead of simulating an isolated HBT, in which the HBT is embedded in an external circuit, and the circuit voltage and current equations are solved along with the Poisson equation and transport equations. In AC simulation, simulator Sentaurus provides the computation of the small signal admittance Y matrix. From the results of Y matrix, the small signal equivalent circuit is constructed with the conductance and capacitance obtained from Y matrix, and the AC parameters, such as S-parameters, will be calculated. The small signal AC characteristics of InP/InGaAs DHBTs under proton irradiation are simulated with different fluences of proton irradiation. Simulation results show that the maximum oscillation frequency will be degraded when fluence of proton irradiation is increased.     

88 nm栅长fmax＝201 GHz InP基In0.53Ga0.47As/In0.52Al0.48As HEMT器件

我们成功研制了栅长88 nm, 栅宽2 50 μm, 源漏间距为2.4 μm 的InP基In0.53Ga0.47As/In0.52Al0.48As高电子迁移率器件(HEMT)。栅是使用PMMA/Al/UVⅢ,通过优化电子束曝光时间及其显影时间的方式制作的。这些器件有比较好的直流及其射频特性：峰值跨导、最大源漏饱和电流密度、开启电压、ft和fmax 分别为765 mS/mm, 591 mA/mm, -0.5 V, 150 GHz 和201 GHz。这些器件将非常适合于毫米波段集成电路。     

功率增益截止频率为183GHz的In0.53Ga0.47As/In0.52Al0.48As HEMTs

通过合理的外延层材料结构设计和改进的器件制备工艺,制备出功率增益截止频率(fmax)为183GHz的晶格匹配InP基In0.53Ga0.47As-In0.52Al0.48As HEMT.该fmax为国内HEMT器件最高值.还报道了器件的结构、制备工艺以及器件的直流和高频特性.     

功率增益截止频率为183GHz的In0.53Ga0.47As/In0.52Al0.48As HEMTs

通过合理的外延层材料结构设计和改进的器件制备工艺,制备出功率增益截止频率（fmax）为183GHz的晶格匹配InP基In0.53Ga0.47As-In0.52Al0.48As HEMT。该fmax为国内HEMT器件最高值,还报道了器件的结构、制备工艺以及器件的直流和高频特性。     

有效跨导为1052 mS/mm的高性能InP基In0.52Al0.48As/In0.53Ga0.47As HEMTs

我们成功研制了栅长为0.15 μm、栅宽为2?50 μm、源漏间距为2 μm 的InP 基In_0.52Al_0.48As/In_0.53Ga_0.47As高电子迁移率器件。室温下,当器件V_DS为1.7 V,V_GS为0.1 V时,其有效跨导达到了1052 mS/mm。传输线方法(TLM)测试显示器件的接触电阻为0.032 Ω.mm,器件欧姆接触电阻率为1.03?10_-7Ω.cm_-2. 正是良好的欧姆接触及其短的源漏间距减小了源电阻,进而使得有效跨导比较大。器件还有比较好的射频特性：当V_DS＝1.5 V, V_GS ＝0.1 V 时,f_T和f_max分别为151 GHz,303 GHz。文章报道的HEMT器件非常适合毫米波段集成电路的研制。