2.4 GHz continuously variable ferroelectric phase shifters using all-pass networks

Continuously variable ferroelectric (BST on sapphire) phase shifters based on all-pass networks are presented. An all-pass network phase shifter consists of only lumped LC elements, and thus the total size of the phase shifter is kept to less than 2.2 mm /spl times/ 2.6 mm at 2.4 GHz. The tunability (C/sub max//C/sub min/) of a BST interdigital capacitor is over 2.9 with a bias voltage of 140 V. The phase shifter provides more than 121/spl deg/ phase shift with the maximum insertion loss of 1.8 dB and the worst case return loss of 12.5 dB from 2.4 GHz to 2.5 GHz. By cascading two identical phase shifters, more than 255/spl deg/ phase shift is obtained with the maximum insertion loss of 3.75 dB. The loss figure-of-merit of both the single- and double-section phase shifters is over 65/spl deg//dB from 2.4 GHz to 2.5 GHz.     

Distributed phase shifter with pyrochlore bismuth zinc niobate thin films

A monolithic Ku-band phase shifter employing voltage tunable Bi/sub 1.5/Zn/sub 1.0/Nb/sub 1.5/O/sub 7/ (BZN) thin film parallel plate capacitors is reported. BZN films were deposited by radio frequency magnetron sputtering on single-crystal sapphire substrates. A nine-section distributed coplanar waveguide loaded-line phase-shifter structure was designed. A differential phase shift of 175/spl deg/ was achieved with a maximum insertion loss of 3.5 dB at 15 GHz, giving a figure of merit /spl sim/50/spl deg//dB. To the best of our knowledge, this is the first demonstration of a monolithic tunable microwave circuit using BZN thin films.     

On the feasibility of CMOS multiband phase shifters for multiple-antenna transmitters

We present the design of an integrated multiband phase shifter in RF CMOS technology for phased array transmitters. The phase shifter has an embedded classical distributed amplifier for loss compensation. The phase shifter achieves a more than 180/spl deg/ phase tuning range in a 2.4-GHz band and a measured more than 360/spl deg/ phase tuning range in both 3.5-GHz and 5.8-GHz bands. The return loss is less than -10dB at all conditions. The feasibility for transmitter applications is verified through measurements. The output power at a 1-dB compression point (P/sub 1 dB/) is as high as 0.4dBmat 2.4GHz. The relative phase deviation around P/sub 1 dB/ is less than 3/spl deg/. The design is implemented in 0.18-/spl mu/mRF CMOS technology, and the chip size is 1200/spl mu/m /spl times/ 2300 /spl mu/m including pads.     

Distributed 2- and 3-bit W-band MEMS phase shifters on glass substrates

This paper presents state-of-the-art RF microelectromechanical (MEMS) phase shifters at 75-110 GHz based on the distributed microelectromechanical transmission-line (DMTL) concept. A 3-bit DMTL phase shifter, fabricated on a glass substrate using MEMS switches and coplanar-waveguide lines, results in an average loss of 2.7 dB at 78 GHz (0.9 dB/bit). The measured figure-of-merit performance is 93/spl deg//dB-100/spl deg//dB (equivalent to 0.9 dB/bit) of loss at 75-110 GHz. The associated phase error is /spl plusmn/3/spl deg/ (rms phase error is 1.56/spl deg/) and the reflection loss is below -10 dB over all eight states. A 2-bit phase shifter is also demonstrated with comparable performance to the 3-bit design. It is seen that the phase shifter can be accurately modeled using a combination of full-wave electromagnetic and microwave circuit analysis, thereby making the design quite easy up to 110 GHz. These results represent the best phase-shifter performance to date using any technology at W-band frequencies. Careful analysis indicates that the 75-110-GHz figure-of-merit performance becomes 150/spl deg//dB-200/spl deg//dB, and the 3-bit average insertion loss improves to 1.8-2.1 dB if the phase shifter is fabricated on quartz substrates.     

Design and modeling of 4-bit slow-wave MEMS phase shifters

A true-time-delay multibit microelectromechanical systems (MEMS) phase-shifter topology based on impedance-matched slow-wave coplanar-waveguide sections on a 500-/spl mu/m-thick quartz substrate is presented. A semilumped model for the unit cell is derived and its equivalent-circuit parameters are extracted from measurement and electromagnetic simulation data. This unit cell model can be cascaded to accurately predict N-section phase-shifter performance. Experimental data for a 4.6-mm-long 4-bit device shows a maximum phase error of 5.5/spl deg/ and S/sub 11/ less than -21 dB from 1 to 50 GHz with worst case S/sub 21/ less than -1.2 dB. In a second design, the slow-wave phase shifter was additionally loaded with MEMS capacitors to result in a phase shift of 257/spl deg//dB at 50 GHz, while keeping S/sub 11/ below -19 dB (with S/sub 21/<-1.9 dB). The beams are actuated using high-resistance SiCr bias lines with typical actuation voltage around 30-45 V.     

Tunable liquid crystal phase shifter for microwave frequencies

A tunable phase shifter using liquid crystal (LC) is presented. The device is fabricated in a fashion similar to LC displays which makes fabrication very simple compared, for example, to MEMS approaches. At the targeted operation frequency of 20 GHz the device offers a performance of above 60 differential phase shift per dB insertion loss and a minimum tuning speed of 340 ms.     

A 2-bit RF MEMS phase shifter in a thick-film BGA ceramic package

The development of a thick-film hermetic BGA package for a radio-frequency (RF) microelectromechanical systems (MEMS) 2-bit phase shifter is presented. The measured packaged MEMS phase shifter average in-band insertion loss was 1.14 dB with an average return loss of 15.9 dB. The package transition insertion loss was less than 0.1 dB per transition with excellent agreement between simulated and measured results. It was also demonstrated that the RF MEMS phase shift performance could be improved to obtain a phase error of less than 3.3 degrees. The first reported measurements of the average rise and fall times associated with a MEMS circuit (in this case a 2-bit phase shifter) were 26 and 70 /spl mu/s, respectively. The advent of packaged RF MEMS phase shifters will reduce the cost (both design and building) of future phase arrays.     

A 2-bit miniature X-band MEMS phase shifter

The design and performance of a compact low-loss X-band true-time-delay (TTD) MEMS phase shifter fabricated on 8-mil GaAs substrate is described. A semi-lumped approach using microstrip transmission lines and metal-insulator-metal (MIM) capacitors is employed for the delay lines in order to both reduce circuit size as well as avoid the high insertion loss found in typical miniaturized designs. The 2-bit phase shifter achieved an average insertion loss of -0.70 dB at 9.45 GHz, and an associated phase accuracy of /spl plusmn/1.3/spl deg/. It occupies an area of only 5 mm/sup 2/, which is 44% the area of the smallest known X-band MEMS phase shifter . The phase shifter operates over 6-14 GHz with a return loss of better than -14 dB.     

RF MEMS phase shifters based on PCB MEMS technology

An X-band main-line type loaded line RF MEMS phase shifter fabricated using printed circuit based MEMS technology is reported. The phase shifter provides a phase shift of 31.6/spl deg/ with a minimum insertion loss of 0.56 dB at 9 GHz for an applied DC bias voltage of 40 V. These phase shifters are suitable for monolithic integration with low-cost phased arrays on Teflon or Polyimide such as low dielectric constant substrates.     

A novel tunable transmission line and its application to a phase shifter

This letter describes the design of a novel transmission line, where characteristic impedance can be adjusted electronically, and its application to a phase shifter. A tunable transmission line enables microwave circuit designers to have flexibility and better return loss which can enhance its tuning range. A UHF band distributed analog phase shifter, as well as a tunable transmission line, is presented. The characteristic impedance of a fabricated novel transmission line varies from 10 to 69.5/spl Omega/, which demonstrates its tunability, and the fabricated UHF phase shifter using this novel line shows the possibility of better reflection coefficient and wider tuning range over the conventional capacitively-loaded distributed phase shifter.     

Tapered distributed analogue tunable phase shifter with low insertion and return loss

Some improvements for distributed Schottky diode tunable phase shifters are carried out. First, near- and far-end sections are tapered to improve return loss. Then, to reduce device length, and the number of varactors, inductances are added in series with the varactors, leading to an improved C/sub max//C/sub min/ ratio. For a 360/spl deg/ tunable phase shifter working at 1 GHz, insertion losses are limited to 2.4 dB maximum. Return loss is better than 20 dB. The tapered sections allow a wide working frequency range, typically from 800 to 1200 MHz with the same characteristics: around 2.4 dB insertion losses, 20 dB return loss.     

Composite right/left handed transmission line phase shifter using ferroelectric varactors

A composite right/left handed (CRLH) transmission line (TL) phase shifter, using ferroelectric (Ba/sub 0.25/Sr/sub 0.75/TiO/sub 3/) varactors as tunable element, is presented for the first time. It is theoretically and experimentally demonstrated how the unique features of CRLH TLs, enables a differential phase shift with flat frequency dependence around the center frequency. The experimental prototype is a coplanar design integrated on a high resistive Si substrate. It includes four CRLH T-unit cells and has a physical length of 3850/spl mu/m. The ferroelectric varactors are realized in parallel plate version. Under 15-V dc bias applied over each varactor, the differential phase shift is flat around 17GHz and has an absolute value of 50/spl deg/.     

Miniature and tunable filters using MEMS capacitors

Microelectromechanical system (MEMS) bridge capacitors have been used to design miniature and tunable bandpass filters at 18-22 GHz. Using coplanar waveguide transmission lines on a quartz substrate (/spl epsiv//sub r/ = 3.8, tan/spl delta/ = 0.0002), a miniature three-pole filter was developed with 8.6% bandwidth based on high-Q MEMS bridge capacitors. The miniature filter is approximately 3.5 times smaller than the standard filter with a midband insertion loss of 2.9 dB at 21.1 GHz. The MEMS bridges in this design can also be used as varactors to tune the passband. Such a tunable filter was made on a glass substrate (/spl epsiv//sub r/ = 4.6, tan/spl delta/ = 0.006). Over a tuning range of 14% from 18.6 to 21.4 GHz, the miniature tunable filter has a fractional bandwidth of 7.5 /spl plusmn/ 0.2% and a midband insertion loss of 3.85-4.15 dB. The IIP/sub 3/ of the miniature-tunable filter is measured at 32 dBm for the difference frequency of 50 kHz. The IIP/sub 3/ increases to >50 dBm for difference frequencies greater than 150 kHz. Simple mechanical simulation with a maximum dc and ac (ramp) tuning voltages of 50 V indicates that the filter can tune at a conservative rate of 150-300 MHz//spl mu/s.     

Photonic RF phase shifter and tunable photonic RF notch filter

A new photonic RF phase shifter structure for phased array antennas is presented. It is based on a single dual-output modulator and two optical switches and optical attenuators. This can realize continuous phase shifting of 0/spl deg/-360/spl deg/ without altering the signal amplitude. It has the advantages of wide bandwidth, fast response time, and fine tuning resolution. Experimental results demonstrate phase shifts over a 360/spl deg/ phase range, with RF signal power changes of less than 0.2 dB, which is in close agreement with predictions. A tunable photonic RF notch filter, which is based on the new phase shifter, is also presented. Experimental results demonstrate continuous tuning of the photonic notch filter over a wide tuning range, which covers the full free spectral range, which is in good agreement with predictions.     

Compact reflective microstrip phase shifter for traveling wave antenna applications

A varactor diode based microstrip phase shifter for 5.8GHz is presented. It is designed for use in microstrip traveling wave antennas where there is a strict limitation on the available space for the phase shifters. To meet all requirements, a reflective type phase shifter is chosen. Such a phase shifter includes a hybrid coupler. A compact branch line coupler is designed to make the phase shifter fit between the radiating elements in the antenna, while maintaining sufficient electrical performance. Phase shifters are designed with different types of stubs connecting the diodes to ground. A phase tuning range of 62/spl deg/ is measured for a phase shifter with parallel open stubs, and 92/spl deg/ with shorted stubs. Insertion loss is in both cases less than 0.6dB. A complete five-element array antenna is built and characterized. Measurements show beam scanning angles within /spl plusmn/32/spl deg/ from broadside.     

Development of multiband phase shifters in 180-nm RF CMOS technology with active loss compensation

We present the design and development of a novel integrated multiband phase shifter that has an embedded distributed amplifier for loss compensation in 0.18-/spl mu/m RF CMOS technology. The phase shifter achieves a measured 180/spl deg/ phase tuning range in a 2.4-GHz band and a measured 360/spl deg/ phase tuning range in both 3.5- and 5.8-GHz bands. The gain in the 2.4-GHz band varies from 0.14 to 6.6 dB during phase tuning. The insertion loss varies from -3.7 dB to 5.4-dB gain and -4.5 dB to 2.1-dB gain in the 3.5- and 5.8-GHz bands, respectively. The gain variation can be calibrated by adaptively tuning the bias condition of the embedded amplifier to yield a flat gain during phase tuning. The return loss is less than -10 dB at all conditions. The chip size is 1200 /spl mu/m/spl times/2300 /spl mu/m including pads.     

A scalable reflection type phase shifter with large phase variation

We describe a reflection type phase shifter which exhibits a large phase shift range. We characterized its response between 1.95 GHz and 2.15 GHz and achieved over 400/spl deg/ phase shift with less than 4dB insertion loss. The transition time from 0/spl deg/ to 180/spl deg/ is <20 nS. Our design is scalable to mm-wave operation because it uses no inductors.     

A new Millimeter-wave printed dipole phased array antenna using microstrip-fed coplanar stripline tee junctions

A new millimeter-wave printed twin dipole phased array antenna is developed at Ka band using a new microstrip-fed CPS tee junction, which does not require any bonding wires, air bridges, or via holes. The phased array used a piezoelectric transducer (PET) controlled tunable multitransmission line phase shifter to accomplish a progressive phase shift. A progressive phase shift of 88.8/spl deg/ is achieved with the 5 mm of perturber length when the PET has full deflection. Measured return loss of the twin dipole antenna is better than 10 dB from 29.5 to 30.35 GHz. Measured return loss of better than 15 dB is achieved from 30 to 31.5 GHz for a 1/spl times/8 phased array. The phased array antenna has a measured antenna gain of 14.4 dBi with 42/spl deg/ beam scanning and has more than 11 dB side lobe suppression across the scan.     

Broadband 180/spl deg/ bit phase shifter using a /spl lambda//2 coupled line and parallel /spl lambda//8 stubs

In this paper, a broadband 180/spl deg/ bit phase shifter using a new switched-network was presented. The new network is composed of a /spl lambda//2 coupled line and parallel /spl lambda//8 open and short stubs, which are shunted at the edge points of a coupled line, respectively. According to a desired phase shift, it provides a controllable phase dispersive characteristic by the proper determination of Z/sub m/,Z/sub s/, and R values. The 180/spl deg/ bit phase shifter operated at 3 GHz was fabricated and experimented using design graphs which provide the required Z/sub m/,Z/sub s/ values, and I/O match and phase bandwidths. The experimental performances showed broadband characteristics.     

A 0.13-μ m CMOS Phase Shifter Using Tunable Positive/Negative Refractive Index Transmission Lines

This letter presents a tunable positive/negative refractive index transmission line (TL) phase shifter utilizing active circuits. It comprises a microstrip TL loaded with series varactors and a shunt monolithic microwave integrated circuit (MMIC) to synthesize a tunable inductor. This implementation increases the phase tuning range and maintains the input and output matching of the phase shifter across the entire phase tuning range, while eliminating the need for bulky passive inductors. The phase shifter is capable of providing both positive and negative phase shifts. The MMIC tunable inductors are fabricated in a 0.13-mum CMOS process and operate from a 1.5-V supply. The phase shifter achieves a phase of -40deg to +34deg at 2.5GHz from a single stage with less than -19dB return loss, and better than 1.1-dB insertion loss at 2.5 GHz. The phase shifter has a 1-GHz bandwidth over which the return loss remains better than 12.1dB