聚合物微流控芯片超声波微熔融键合方法

为了将超声波聚合物焊接技术更好地应用于聚合物微流控芯片的键合,提出基于界面微熔融的聚合物微流控芯片超声波键合方法.设计了适用于该方法的导能筋结构,在合理的键合工艺参数控制下使导能筋结构材料不发生熔融流延,通过键合界面软化润湿来实现对微流控芯片微通道的密封连接.实验结果表明,键合时间仅为0.09 s,键合后微通道的承压能力可达6个大气压,满足微流控芯片的使用要求.面接触导能筋可采用机械加工或注塑方法获得,具有良好的产业化应用前景.     

基于局部溶解性激活的聚合物微流控芯片超声波键合

利用低于临界振幅下的超声波作用在聚合物上仅产生表面热的特点,结合PMMA在异丙醇(IPA)中的温变溶解特性,提出了一种基于局部溶解性激活的超声波聚合物微流控芯片键合方法.理论分析表明当超声振幅小于临界振幅时,只有器件接触表面产生局部表面热,而且在70℃附近IPA对PMMA的溶解性才具有良好的激活作用.在试验研究中,利用精密加工法和热压法制作了带面接触式导能筋结构和80μm×80μm微通道的PMMA微流控芯片基片.在超声振幅为13μm、键合时间8 s、键合压力300 N的条件下进行了键合试验.结果表明,芯片拉伸强度达2.25 MPa,微通道的承压能力超过800 kPa,键合后导能筋无熔融,微沟道变形率小于2%,键合时间仅为8s.该方法的键合强度和键合效率明显高于传统的键合方法,而微结构的变形率却较小,故可作为一种具有产业化前景的聚合物MEMS器件快速封接方法.     

微流控芯片制作及电特性研究

采用热压和键合的方法制作玻璃和有机聚合物(PMMA)芯片,对玻璃和PMMA芯片在高压直流电场作用下的伏安特性进行了研究和分析。实验表明,玻璃芯片的伏安线性区域为1100V,PMMA芯片为700V,由于玻璃的导热性能优于PMMA,所以玻璃芯片的伏安线性区域大于PMMA芯片。在此线性段内,根据基尔霍夫电流定律将芯片简化为等效电阻模型,研究了分离电压以及分离焦耳热对芯片分离效果的影响因素,为微流控芯片的优化设计提供了理论依据。     

激光辅助阳极键合方法及实验研究

为了提高MEMS微器件成品的封装质量和效率,本文自主设计了新型的激光辅助阳极键合技术系统,并将其运用于硼硅玻璃BF33与硅的键合实验,成功实现了硅与玻璃在低功率下局部区域的完好键合.采用扫描电子显微镜对键合样本界面的微观结构进行分析,结果表明:在玻璃/硅的键合界面有明显的过渡层生成.使用能谱仪测定玻璃基体、过渡层以及硅层所含的化学元素种类及其质量分数,通过对比分析认为:激光在键合层的致热温度和界面区的强电场导致硼硅玻璃耗尽层中的氧负离子向键合界面迁移扩散,并与硅发生氧化反应形成中间过渡层,而该界面过渡层的形成是实现玻璃/硅键合的基本条件.该种新型键合技术操作简单、速度快、灵活性高,可以针对不同键合材料实时调整激光功率、行走速度、扫描时间等参数,可广泛应用于MEMS封装器件中硅与玻璃的键合.     

ITO玻璃电致化学发光微流控芯片的低温键合

研究了一种利用商品化的氧化铟锡ITO）玻璃制作一次性电致化学发光微流控芯片的方法．采用光刻和湿法腐蚀ITO（氧化铟锡）层制作微电极;利用同样的方法,在另一片Cr板玻璃上湿法腐蚀微沟道．在玻璃之间夹入PE薄膜作为间质实现芯片的低温键合,采用开孔和预压处理PE薄膜,解决了键合气泡和储液池边缘变形问题．该方法解决了ITO玻璃不耐高温的问题,在120～125℃实现了微通道的有效封接,芯片的键合强度达到0．7MPa．     

集成电化学检测三电极体系微流控芯片的研制

本文介绍了一种在单个PMMA衬底上集成Ag-Pt-Pt两种材料微电极的方法。PMMA是一种聚合物材料,而在聚合物材料上集成两种材料电极的微流控芯片制作,需集成不同材料的电极。电化学检测常采用三电极体系,且这三个电极往往是由不同材料组成的。工作电极和对电极一般采用贵金属材料。本文研究了一种在PMMA衬底上集成Pt-Pt-Ag三电极体系的微流控芯片方法。利用可逆键合法,将集成Pt-Pt-Ag三电极体系的PMMA衬底与一片带有检测池的PDMS盖片键合到一起,研制出了一种电化学检测微流控芯片。     

用于微电子机械系统封装的体硅键合技术和薄膜密封技术

对静电键合、体硅直接键合和界面层辅助键合等三种体硅键合技术，整片操作、局部操作和选择保护等三种密封技术，以及这些技术用于微电子机械系统的密封作了评述，强调在器件研究开始时应考虑封装问题，具体技术则应在保证器件功能和尽量减少芯片复杂性两者之间权衡决定。     

微流控芯片微沟道的超声压印制作

作为一种新型聚合物微结构成形方法,超声波压印具有成形速度快和基片整体变形小的特点,但是微结构在较大面积成形时存在均匀性较差的问题．本文面向微流控芯片中微沟道的超声波压印成形,通过设计正交实验和有限元仿真研究的方法,分析了超声压印工艺参数对微流控芯片成形质量和均匀性的影响原因及规律．结果表明,可以通过优化超声波压印压力、振幅和超声波作用时间提高压印均匀性．其中超声波压印压力对成形精度和均匀性的影响最大．采用优化后的工艺参数进行实验,在48mm×32mm面积的PMMA微流控芯片基片上成形了微沟道,微沟道的复制精度优于95．6％．片上3点的均匀性为98．0％．     

基于PDMS复合导电材料的三维电极的研究进展

聚二甲基硅氧烷(Polydimethylsiloxane,PDMS)具有透明、生物相容性、弹性好等特点,广泛应用于微流控芯片加工制作,但PDMS本身不导电,且与金属键合困难,很难在PDMS微型器件中加工导电结构。介绍了一种基于PDMS和导电颗粒的复合导电材料,从制备方法、导电理论及在微流控领域应用现状等3个方面进行了综述。这种材料导电性良好,易与PDMS芯片键合,且加工方法简单,是未来加工三维微电极的理想材料。     

环烯烃聚合物(COP)微流控芯片的制备及其与聚甲基丙烯酸甲酯(PMMA)微流控芯片的性能对比

采用热压方法制备了环烯烃聚合物(COP)微流控芯片.考虑到温度对微结构热压成形的质量影响最大,基于材料的粘弹性特性,通过变温准蠕变实验获得了热压参考温度Tr.实验证明,在该温度下热压成形,宽度和深度方向的复制精度分别达到了97.6%和94.3%.为了研究制备的COP微流控芯片的性能,将其和同一模具制备的PMMA微流控芯片进行了性能对比实验.通过背景荧光实验、电泳实验和DNA分析实验三方面的研究表明,与PMMA芯片相比,COP芯片背景荧光低,电泳效率高,检测重现性相对标准偏差小于2.5%,适用于生化分析.     

超声强化氨基化多壁碳纳米管改性环氧黏接接头性能研究

目的 探究超声处理对氨基化多壁碳纳米管(MWCNTs–NH₂)改性环氧黏接接头黏接性能和热稳定性的影响,为强化MWCNTs–NH₂改性环氧胶黏剂与铝合金的黏接提供参考。方法 通过机械搅拌与声波破碎的方法将质量分数为0.75%的MWCNTs–NH₂添加到环氧胶黏剂基体中,使用MWCNTs–NH₂改性环氧胶黏剂制备铝合金黏接接头,基于超声辅助黏接工艺在铝合金黏接过程中进行超声处理。通过傅里叶变换红外光谱仪(FTIR)分析MWCNTs–NH₂改性环氧胶黏剂基体官能团的变化情况。采用单搭接剪切强度试验测定黏接接头的拉伸剪切强度。通过扫描电子显微镜(Scanning Electron Microscope,SEM)观察黏接接头拉伸失效断面以及铝合金与胶黏剂间的黏接界面。通过热失重分析仪(TGA)测试并记录胶黏剂试样质量随温度变化的曲线。结果 经超声处理后,MWCNTs–NH₂与树脂基体间的化学反应增强。与纯环氧黏接接头相比,超声处理后的MWCNTs–NH_2...     

PMMA微流控检测芯片的设计与制作

设计并制作了一种PMMA（polymethyl methacrylate）材料的微流控检测芯片,将外界气体驱动液体用于实际水样的分析和检测．利用精密加工的方法加工出芯片的整体尺寸为86mm×60mm×4．5mm．采用溶胶-凝胶的改性方法对微通道管路进行亲水处理,正硅酸乙酯的水解缩合生成了一层溶胶．凝胶覆盖在PMMA表面,从而大大提高了亲水性．在室温下对芯片进行键合,溶剂为二氯乙烷和无水乙醇按1：1混合的混合液．该方法避免了微通道的坍塌,有效防止了堵塞．实验证明,芯片接触紧密,且冲击强度能够满足要求．同时,芯片上集成了多个阀．阀膜选用0．5mm厚的硅胶膜,采用硅橡胶做黏合剂     

Room-temperature bonding for plastic high-pressure microfluidic chips

A generic method for the rapid, reproducible, and robust bonding of microfluidic chips fabricated from plastics has been developed and optimized. One of the bonding surfaces is exposed to solvent vapor prior to bringing the mating parts into contact and applying a load. Nanoindentation measurements performed by atomic force microscopy show that a reversible material softening occurs upon exposure to solvent vapor. Subsequent exposure of the bonded chip to UV light then strengthens the bond between mating parts and increases the burst pressure by 50% due to partial cross-linking and chain scission reactions as measured by size exclusion chromatography-multiangle light scattering (SEC-MALS). Performing all steps of this procedure at room temperature eliminates channel distortion observed during thermal bonding and affords channels with highly uniform cross-sectional dimensions. Our technique enables chips resistant to pressures as high as 34.6 MPa.     

Microstructural characteristics of Au/Al bonded interfaces

Fracture characteristics at the interface of ultrasonic bonds between Au and Al were characterized by SEM following pull-testing to effect separation of the bonded joints. Vertical sections at the bonding point were produced by ion-sputter thinning, and were examined by TEM. Results show that the thickness of the Au/Al atomic diffusion interface was about 500 nm due to combined effects of ultrasonic and thermal energy. Ultrasonic vibration activates dislocations in the crystalline lattice and increases atomic diffusion. The fracture morphology on the lift-off interface was dimpled rupture. Tensile fracture occurred during the pull-test not at the bonded interface but in the base material; the bond strength at the interface was enhanced by the diffusion reactions that occurred across the interface due to the combined ultrasonic and thermal energy.     

激光多层熔覆纳米陶瓷层工艺参数优化

为了深入了解激光多层熔覆工艺与涂层性能之间的关系,采用压片预置式激光多层熔覆工艺制备了纳米Al2O3-13%TiO2(质量分数)陶瓷层;通过3因素3水平正交试验分析了激光熔覆熔池闭环控制温度、超声振动频率及保温箱预热温度对涂层结合强度的影响,并对激光熔覆工艺参数进行了优化;通过扫描电镜(SEM)和结合强度测试研究了最优工艺下所得涂层的形貌和性能。结果表明:影响涂层结合强度的因素主次顺序依次为熔池闭环控制温度、保温箱预热温度、超声振动频率;激光多层熔覆纳米Al2O3-13%TiO2涂层最佳工艺参数为熔池闭环控制温度2 500℃,超声振动频率50 kHz,保温箱预热温度400℃;优化工艺熔覆的涂层各层之间无明显界面,涂层内部致密、连续,基本无孔隙及贯穿性大裂纹,涂层结合强度明显提高,达66.3 MPa。     

Irregular Characteristics of Bond Interface Formation in Ultrasonic Wire Wedge Bonding

The mechanism of ultrasonic wire wedge bonding, one of the die/chip interconnection methods, was investigated based on the characteristics of the ultrasonic wire bonding joints. The Al-1%Si wire of 25 μm in diameter was bonded on Au/Ni/Cu pad and the joint cross-section was analyzed by scanning electron microscopy （SEM） and energy-dispersive X-ray spectroscopy （EDX）. The results indicated that it is irregular for the ultrasonic bond formation, non-welded at the centre but joining well at the periphery, especially at the heel and toe of the joint. Furthermore, the diffusion and/or reaction at the cross-section interface are not clear at C-zone, while there exists a strip layer microstructure at P-zone, and the composition is 78.96 at. pct Al and 14.88 at. pct Ni, close to the Al3Ni intermetallic compound. All these observations are tentatively ascribed to the plastic flow enhanced by ultrasonic vibration and repeated cold deformation driving interdiffusion between AI and Ni at bond interface.     

Microfluidic chip to produce temperature jumps for electrophysiology

We developed a microfluidic chip that provides rapid temperature changes and accurate temperature control of the perfusing solution to facilitate patch-clamp studies. The device consists of a fluid channel connected to an accessible reservoir for cell culture and patch-clamp measurements. A thin-film platinum heater was placed in the flow channel to generate rapid temperature change, and the temperature was monitored using a thin-film resistor. We constructed the thermal chip using SU-8 on a glass wafer to minimize the heat loss. The chip is capable of increasing the solution temperature from bath temperature (20 degrees C) to 80 degrees C at an optimum heating rate of 0.5 degrees C/ms. To demonstrate the ability of the thermal chip, we have conducted on-chip patch-clamp recordings of temperature-sensitive ion channels (TRPV1) transfected HEK293 cells. The heat-stimulated currents were observed using whole-cell and cell-attached patch configurations. The results demonstrated that the chip can provide rapid temperature jumps at the resolution of single-ion channels.     

An Evaluation of Quality of Joints of Two Dissimilar Metals by Diffusion Bonding using Ultrasonic C Scan

Diffusion bonding of commercially available pure aluminum/copper was carried out between the temperatures of 400°C and 500°C for 60 min under the pressure of 5–15 MPa in vacuum. The effects of temperature and pressure on the microstructure of aluminum/copper diffusion bonded joints were analyzed. The interface micrographs of the bonded samples were observed in optical and scanning electron microscope (SEM) images. The soundness of the bond was evaluated by destructive and nondestructive (ultrasonic C scan) testing methods. The quality of the bonded joints was evaluated by the intensity of the echo and its images of ultrasonic testing and was correlated with destructive parameters such as the strength ratio. Chemical compositions of the interface and the fractured surface of the bonded samples were characterized by energy dispersive spectroscopy (EDS). EDS patterns were confirmed by the formation of the different compositions at the interface of the bonded samples. Better bonding characteristics were observed by diffusion bonding optimum parameters at 450°C with an applied pressure of 15 MPa for 60 min.