条纹管紫外激光成像技术方案及性能分析

介绍了利用条纹管作为探测器实现紫外激光成像的技术方案,阐述了条纹管紫外激光成像的工作原理,设计了核心器件的技术指标,理论分析了整个系统的性能,重点计算了激光成像系统的探测距离,理论证明了条纹管紫外激光成像系统的技术可行性。     

紫外增强图像传感器的研究进展

近年来图像传感器在紫外成像的应用越来越广泛,尤其是以CCD（charge coupled device）和CMOS（complementary metal oxide semiconductor）为主的紫外图像传感器受到了研究人员的广泛关注。半导体技术的进步和纳米材料的发展进一步推动了紫外图像传感器的研究。本文综述了国内外紫外增强图像传感器的研究进展,介绍了几种增强器件紫外响应的材料,另外还简要概述了紫外图像传感器在生化分析、大气监测、天文探测等方面的应用,并讨论了CCD/CMOS图像传感器在紫外探测方面所面临的挑战。     

日盲紫外成像技术与应用的若干分析

本文介绍了日盲紫外成像的基本理论和技术特色,简述了技术实现的途径、原理和优势,讨论了极微弱信号检测条件下日盲紫外成像核心器件的需求特性,并对多阳极微通道阵列光电倍增管等几类真空光电成像探测器进行了分析;例举了日盲紫外成像在战术导弹告警、天基紫外预警、紫外搜救等几方面的典型军事应用,包括其简要组成及工作原理,并瞻望了日盲紫外成像技术的未来发展前景。     

AlxGa1-xN日盲紫外探测器及其焦平面阵列

报道了320×256元AlxGa1-xN日盲型紫外探测器及其焦平面阵列探测器的研制情况,介绍了材料生长、器件制备工艺和器件的光电特性.器件的开启电压大于3.5 V,-0.5 V偏压时暗电流小于1.2×10-12A(φ=300 μm台面),光谱响应范围260～280 nm,268 nm峰值波长的响应度大于0.095 A/W.器件实现了日盲紫外成像演示.     

基于数字TDI技术的紫外成像系统的设计

为了实现高灵敏度紫外探测,基于600×500元紫外电荷耦合器件(Charge-Coupled Device, CCD) 图像传感器,创新性地运用软件开窗技术设计了一种基于数字时间延迟积分(Time Delay Integration, TDI)的 紫外成像系统。具体分析了成像系统的噪声来源以及TDI阶数M对成像系统信噪比的影响,并从理论上分析了 采用M阶数字TDI技术对成像系统信噪比的影响。然后详细介绍了在FPGA内部实现数字TDI算法的情况,并给 出了数据采集系统中的上位机交互流程。实验结果表明,基于数字TDI技术的紫外成像系统可以获得较 高的图像对比度和信噪比以及优良的成像质量。     

AlGaN PIN结构紫外探测器研制和建模分析

紫外探测器在军事高科技和民品市场的紫外通信和成像方面具有很高的价值。探讨了Al GaNpin紫外探测器的制作工艺和材料及结构对器件性能的影响。提出改进 pin紫外探测器性能的措施     

AlGaN PIN结构紫外探测器研制和建模分析

紫外探测器在军事高科技和民品市场的紫外通信和成像方面具有很高的价值。探讨了AlGaN pin紫外探测器的制作工艺和材料及结构对器件性能的影响。提出改进pin紫外探测器性能的措施。     

AlGaN PIN结构紫外探测器研制和建模分析

紫外探测器在军事高科技和民品市场的紫外通信和成像方面具有很高的价值.探讨了AlGaN pin 紫外探测器的制作工艺和材料及结构对器件性能的影响.提出改进pin紫外探测器性能的措施.     

光子计数成像技术及其应用

随着微光像增强技术和弱光成像器件的发展 ,光子计数成像技术近年来发展很快并日趋成熟 ,光子计数成像在军事、天文学、物理学、化学、生物学、量子电子学等领域得到了广泛应用。介绍了光子计数成像的原理、技术特点及其应用。     

产品介绍

该系统是近年来发展起来的全新观察用成像系统,其核心部件采用我所新近研制的紫外图像增强管、小型CCD摄像机及专用转换镜、12V专用电源、253.7nm滤光片、黑白监视器及电缆组成。其中系统物镜采用专门研制的特种紫外成像镜头,具有超消色差,微距成像功能。主要性能如下:物镜:紫外石英成像镜头供电(内置电池):DC12V光谱响应范围/nm:185～320工作温度/℃:-10～+55成像器件:近贴聚焦紫外像增强管工作湿度:20%～95%水平中心分辨率/TVL:380视场角:约28°SGN-W6小型宽动态微光摄像组件该摄像组件采用I-CCD技术和自动控制电路技术,能够在10-…     

Charge detection modeling in solid-state image sensors

Solid-state image sensors continue to find many applications as fabrication technology improves. Due in part to the relatively small role that image sensors have played in the semiconductor world, there exists very little experience in performance modeling of this class of devices. In this paper we discuss a three-dimensional model of the image sensor responsivity. Responsitivity is simply the amount of charge detected by the image sensor divided by the input photon energy. We discuss the fundamental aspects of charge detection and formulate and solve the appropriate model. We find good agreement between this model and experimental data.     

超连续谱激光-单色仪在偏振遥感器定标中的影响因素分析

偏振遥感器的相对光谱响应度和带内光谱响应非一致性是遥感器实验室定标的基本参数。文中利用新型的超连续谱激光作为单色仪的前置照明光源,搭建了一套基于超连续谱激光-单色仪的细分光谱扫描定标装置,可用于偏振遥感器的相对光谱响应度定标。实验中以490 、670、910 nm三个偏振通道作为例,分别在单色仪直接输出光和单色光导入积分球两种状态下,得到通道式偏振遥感器的相对光谱响应度结果,并对两种状态下定标光源的偏振特性进行了测量。实验结果表明,单色仪直接输出光模式下,光源存在明显的偏振度和偏振方位角变化,三个偏振通道的带内光谱响应非一致性分别为0.91%、4.25%和1.06%;而在单色光导入积分球后,光源的偏振度明显降低,此时带内光谱响应非一致性结果分别为0.15%、0.47%和0.57%,说明消偏后的光源能有效适用偏振遥感器的光谱响应度定标,基于超连续谱激光-单色仪的系统级定标装置在偏振遥感器的定标中具有广泛应用前景。     

超连续激光单色仪系统级光谱响应度定标比对验证

细分光谱扫描定标技术是实现遥感器高精度光谱辐射定标的重要方式,基于超连续激光单色仪的定标装置是实现遥感器细分扫描定标的新选择。为验证所建立的超连续激光单色仪装置的系统级定标能力,利用硅辐亮度计和滤光片辐射计,分别采用超连续激光单色仪定标装置和可调谐激光定标装置对其进行了系统级绝对光谱响应度定标比对验证。实验结果表明:在所验证波段范围内,两种定标装置获得的硅辐亮度计绝对光谱响应度系统级定标结果最大偏差为0.6%。通道式滤光片辐射计的带内绝对光谱响应度定标结果最大偏差优于0.4%,带内积分响应度最大偏差约0.1%。文中的研究验证了超连续激光单色仪定标装置具有良好的系统级定标能力,能够获得较高的定标精度,在遥感器的绝对光谱响应度定标中具有重要应用前景。     

CMOS image sensor with NMOS-only global shutter and enhanced responsivity

Most CMOS image sensors today use the rolling shutter approach to control the integration time. This pixel architecture is advantageous where minimal pixel size is required to increase resolution or reduce over all chip size. For imaging of a fast moving object or when used with pulsed illumination, the rolling shutter approach is not suitable since it leads to severe distortion. Therefore, these applications require image sensors with a global shutter pixel architecture, which incorporates a sample-and-hold element in each pixel. Due to the optical exposure of the in-pixel storage element, shutter leakage is critical. First approaches which use separate wells in the pixel to isolate the storage node from the photodiode showed good shutter efficiency, but are bulky and led to large pixels with poor fill factor and bad responsivity. This paper presents an NMOS-only pixel with a global shutter and subthreshold operation of the NMOS sample-and-hold transistor to increase optical responsivity by a factor of five to 9 /spl upsi/V/photon, including fill factor.     

紫外图像传感器技术研究进展

介绍了两类主要的紫外图像传感器技术的最新研究进展,根据其特点对它们在特定紫外成像应用需求中的优势和不足进行了简要分析,最后对这些紫外图像传感器技术的未来发展进行了展望。     

Broadband Photoresponse Enhancement of a High‐Performance t‐Se Microtube Photodetector by Plasmonic Metallic Nanoparticles

Broadband responsivity enhancement of single Se microtube (Se‐MT) photodetectors in the UV–visible region is presented in this research. The pristine Se‐MT photodetector demonstrates broadband photoresponse from 300 to 700 nm with peak responsivity of ≈19 mA W^?1 at 610 nm and fast speed (rise time 0.32 ms and fall time 23.02 ms). To further enhance the responsivity of the single Se‐MT photodetector, Au and Pt nanoparticles (NPs) are sputtered on these devices. In contrast to only enhancement of responsivity in UV region by Pt NPs, broadband responsivity enhancement (≈600% to ≈800%) of the Se‐MT photodetector is realized from 300 to 700 nm by tuning the size and density of Au NPs. The broadband responsivity enhancement phenomena are interpreted by both the surface modification and surface plasmon coupling. The experimental results of this work provide an additional opportunity for fabricating high‐performance UV–visible broadband photodetectors.     

基于互信息的紫外成像仪中图像配准研究

紫外成像仪为实现放电点定位和电气设备故障诊断,需要对来自不同传感器的紫外与可见光图像进行配准。针对紫外与可见光图像成像原理差异较大,特征点提取及匹配困难的问题,文章提出一种基于互信息的紫外与可见光图像配准算法并将其应用到紫外成像仪中完成实时配准。首先计算紫外与可见光图像中的互信息,将互信息作为相似性测度,采用刚体变换模型对图像进行变换,然后通过1+1进化算法求取最优相似性测度时的空间变换参数而完成图像配准,并通过仿真和紫外成像仪样机验证了所提算法的有效性。     

A Back-Illuminated Vertical-Structure Ultraviolet Photodetector Based on an RF-Sputtered ZnO Film

A back-illuminated vertical-structure ZnO ultraviolet (UV) detector was fabricated using an indium-tin oxide (ITO) electrode. Ordered ITO and ZnO films were grown on a quartz substrate by radiofrequency sputtering. At 5 V bias, the dark current was 640 μA and the photocurrent was 16.8 mA under UV illumination (365 nm, 10 μW), indicating a high responsivity of 1616 A/W. The response time measurements showed a rise time of 71.2 ns and a decay time of 377 μs. The ZnO detector performed well and can be used in a focal-plane array for UV image detection.     

UV photo-responsive characteristics of an n-channel GaN Schottky-barrier MISFET for UV image sensors

The ultraviolet (UV) responsive properties of the enhancement-mode n-channel Schottky-barrier MISFET (SB-MISFET), which was fabricated on a p-type GaN layer grown on silicon substrate, were investigated. The drain leakage current of the MISFET is less than 1 nA/mm/sup 2/, which is quite low compared to recently reported photodetectors. The MISFET exhibited a cutoff wavelength of 365 nm, and the UV/visible rejection ratio was about 120 near the threshold voltage. This is the first demonstration of the MISFET-type UV photodetector, which is highly applicable to the UV image sensors.     

一种改进的CMOS紫外/蓝光光电二极管的二维响应度物理模型

A CMOS UV and blue-extended photodiode is presented and fabricated for light detection in the ultraviolet/blue spectral range. An octagon homocentric ring-shaped geometry is used to improve the ultraviolet responsivity and suppress edge breakdown. This paper has established a two-dimensional responsivity physical model for the presented photodiode and given some numerical analyses. The dead layer effect, which is caused by the high-doping effects and boron redistribution, is considered when analyzing the distribution of the current of the proposed UV and blue-extended photodiode. In the dead layer, the boron doping profile decreases towards the surface. Simulated results illustrate that the responsivity in the UV range is obviously decreased by the effect of the dead layer, while it is not affected in the visible and near-infrared part of the spectrum. The presented photodiode is fabricated and the silicon tested results are given, which agree well with the simulated ones.