Lithium doping and gate dielectric dependence study of solution‐processed zinc‐oxide thin‐film transistors

Abstract— The effects of lithium (Li) doping concentration and gate dielectrics on the performance of solution‐processed zinc‐oxide (ZnO) thin‐film transistors (TFTs) has been investigated. ZnO films with strong c‐axis orientation and lower background conductivity was obtained with 15 at.% of Li. Different crystallization behavior of ZnO was observed in the case of various dielectric surfaces. The 15‐at.% Li‐doped ZnO films (thickness ～20 nm) prepared on SiO² and SiN^x were found to be present in crystalline form, whereas the film prepared on aluminum titanium oxide (ATO) was found to be amorphous. A field‐effect mobility of 1.81 cm²/V‐sec and an Ion/Ioff ratio of 2 × 10⁶ were obtained for the 15‐at.% Li‐doped ZnO TFTs with a bilayer gate dielectric of SiO² and SiN^x. The comparison of dielectric studies showed that the performance of TFTs prepared on SiN^x and ATO are higher than that of the TFTs prepared on SiO².     

Fundamental analysis of harmonic reflection in microwave frequency triplers

Harmonic reflection is a vital technique for microwave frequency multiplier design, including the design of frequency triplers. In this article, principles of frequency tripler design with reflector networks are analyzed via harmonic‐balance simulation of an idealized MESFET/HEMT transistor model. The use of an idealized model allows fundamental mechanisms of 3f0 output power and conversion‐gain improvement via reflector networks to be characterized. Several reflector configurations are analyzed including: a 3f0 input reflector; a f0 output reflector; and a combination of both reflectors. The effects of reflector offset length on tripler performance are analyzed in terms of conversion gain, output power, reflected power, and time‐domain waveforms. As a result of this work, a greater understanding of harmonic‐reflector networks and their importance to tripler design is achieved. © 2006 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2006.     

Annealing effect of low‐temperature (<150°C) Cat‐CVD gate dielectric silicon nitride films diluted with atomic hydrogen

Abstract— The effect of in‐situ hydrogen pretreatment on dielectric properties of silicon nitride (SiN^x) thin films for a gate dielectric layer has been studied. SiN^xthin films were grown at a low temperature (150°C) by Catalytic CVD followed by conventional furnace annealing at 150°C for 2 hours. The in‐situ hydrogen pretreatment was performed without vacuum break before the sample was transferred to the furnace for thermal annealing. Capacitance—voltage (C‐V) and current‐density—voltage (J‐V) measurement showed that the hydrogen pretreatment was effective in reducing the hysteresis in the C‐V curve and in increasing the breakdown voltage. Without the treatment, the 150°C annealing failed to produce reliable C‐V and I‐V characteristics. The C‐V hysteresis and the threshold voltage shift of SiN^x were improved by furnace annealing as the hydrogen dilution ratio increased. Also, addition of hydrogen to the deposition gas mixture helped to improve the dielectric properties of the SiN^x films after thermal annealing. The combination of hydrogen dilution of the source gas and the in‐situ hydrogen treatment was successful in producing low‐temperature SiN^x films applicable to a‐Si TFTs. The TFT fabricated by using these films showed a field‐effect mobility of 0.23 cm²/V‐sec and a Vth of 3.1 V.     

Influence of channel‐deposition conditions and gate insulators on performance and stability of top‐gate IGZO transparent thin‐film transistors

Abstract— Amorphous‐oxide‐semiconductor thin‐film transistors (TFTs) have gained wide attention in recent years due to their many merits. In this paper, a series of top‐gate transparent thin‐film transistors (TFTs) based on amorphous‐indium—gallium—zinc—oxide (a‐IGZO) semiconductors have been fabricated and investigated. Specifically, low‐temperature SiNx and SiOx were used as the gate insulator and different Ar/O² gas‐flow ratios were used for a‐IGZO channel deposition to study the influences of gate insulators and channel‐deposition conditions. In addition to the investigation of device performance, the stability of these TFTs was also examined by applying constant‐current stressing. It was found that a high mobility of 30‐45 cm²/V‐sec and small threshold‐voltage shift in constant‐current stressing can be achieved using SiNx with suitable hydrogen‐content stoichiometry as the gate insulator and the carefully adjusted Ar/O² flow ratio for channel deposition. These results may be associated with hydrogen incorporation into the channel, the lower defect trap density, and the better water/oxygen barrier properties (impermeability) of the low‐temperature SiNx.     

Bessel function of the first kind with complex argument

A new method of computing integral order Bessel functions of the first kind J_n(z) when either the absolute value of the real part or the imaginary part of the argument z = x + iy is small, is described. This method is based on computing the Bessel functions from asymptotic expressions when x∼ 0 (or y ∼ 0). These expansions are derived from the integral definition of Bessel functions. This method is necessary because some existing algorithms and methods fail to give correct results for small x small y. In addition, our overall method of computing Bessel functions of any order and argument is discussed and the logarithmic derivative is used in computing these functions. The starting point of the backward recurrence relations needed to evaluate the Bessel function and their logarithmic derivatives are investigated in order to obtain accurate numerical results. Our numerical method, together with established techniques of computing the Bessel functions, is easy to implement, efficient, and produces reliable results for all z.     

Preparation and characterization of unimorph actuators based on piezoelectric Pb(Zr0.52Ti0.48)O3 materials

This paper describes the preparation and characterization of unimorph actuators for deformable mirrors, based on Pb(Zr_0.52Ti_0.48)O₃ (PZT52) thin film. As comparison, two different designs, where the PZT layer in the unimorph actuators was driven by either interdigitated electrodes (IDT-mode) or parallel plate electrodes (d₃₁-mode), were investigated. The actuators utilize a unimorph membrane (diaphragm) structure consisting of an active PZT piezoelectric layer and a passive SiO₂/Si composite layer. To fabricate the diaphragm structures, n-type (1 0 0) silicon-on-insulator (SOI) wafers with 1 μm thermal SiO₂ were used as substrates (for d₃₁-mode actuators, the upper Si part of SOI need to be heavily doped and used as bottom electrodes simultaneously). Sol-gel derived PZT piezoelectric layers with PbTiO₃ (PT) bufferlayer in total of 0.86 μm were then fabricated on them, and 0.15 μm Al reflective layers were deposited and patterned into top electrode geometries, subsequently. The diaphragms were released using orientation-dependent wet etching (ODE) with 5-10 μm residual silicon layers. The complete unimorph actuators comprise 4 × 4 discrete units (4 mm² in size) with patterned PZT films for parallel plate configuration or 3 × 3 individual pixels (2 mm in IDT diameter) with continuous PZT films in graphic region for IDT configuration. The measurement results indicated that both of the two configurations can generate considerable deflections at low voltage. The measured maximum central deflections at 15 V were approximately 2.5 μm and 2.8 μm, respectively. The intrinsic strain conditions shaping the deflection profiles for the diaphragm actuators were also analyzed. In this paper, the behaviors of clamped parallel plate configuration without a diaphragm were also evaluated.     

Stress control for overlay registration in a‐Si:H TFTs on flexible organic‐polymer‐foil substrates

Abstract— Mechanical stress in hydrogenated amorphous‐silicon (a‐Si:H) thin‐film transistors (TFTs) is becoming an important design parameter, especially when the TFTs are made on compliant substrates. Excessive stress always has been avoided to prevent film fracture and peeling. Now, attention is turning to the effects of stress on the TFT backplane dimensions and hence on the overlay alignment. The goal is to keep the size of the circuit‐on‐substrate composite structure the same at successive critical photolithographic steps. This is done most easily by keeping the structure flat. We show that a compensating stress can be dialed into the silicon nitride SiN_x) gate dielectric to also keep the substrate size constant. Varying the stress in the SiN_x gate dielectric did not significantly change the as‐fabricated TFT characteristics.     

Improved crystalline structure and H2S sensing performance of CuO-Au-SnO2 thin film using SiO2 additive concentration

In situ SiO₂-doped SnO₂ thin films were successfully prepared by liquid phase deposition. The influence of SiO₂ additive as an inhibitor on the surface morphology and the grain size for the thin film has been investigated. These results show that the morphology of SnO₂ film changes significantly by increasing the concentration of H₂SiF₆ solution which decreases the grain size of SnO₂. The stoichiometric analysis of Si content in the SnO₂ film prepared from various Si/Sn molar ratios has also been estimated. For the sensing performance of H₂S gas, the SiO₂-doped Cu-Au-SnO₂ sensor presents better sensitivity to H₂S gas compared with Cu-Au-SnO₂ sensor due to the fact that the distribution of SiO₂ particles in grain boundaries of nano-crystallines SnO₂ inhibited the grain growth (<6 nm) and formed a porous film. By increasing the Si/Sn molar ratio, the SiO₂-doped Cu-Au-SnO₂ gas sensors (Si/Sn = 0.5) exhibit a good sensitivity (S = 67), a short response time (t_90% < 3 s) and a good gas concentration characteristic (α = 0.6074). Consequently, the improvement of the nano-crystalline structures and high sensitivity for sensing films can be achieved by introducing SiO₂ additive into the SnO₂ film prepared by LPD method.     

On the closure of the diagonal of a T1-space

Let X be a topological space. The closure of Δ={(x,x):xX} in X×X is a symmetric relation on X. We characterise those equivalence relations on an infinite set that arise as the closure of the diagonal with respect to a T₁-topology.     

Three-dimensional analysis of Marangoni flow and radial segregation in Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Si<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript> melt with Czochralski configuration

In order to examine the flow field and the radial segregation of silicon (Si) in a Ge _x Si_1-x melt with an idealized Czochralski (Cz) configuration, we conducted a series of unsteady three-dimensional (3-D) numerical simulations under zero-gravity conditions. The effect of convection driven by surface tension on the free surface of the melt was included in the model, by considering thermal, as well as solutal Marangoni convection. The concentration and flow fields at several stages during crystal growth are presented for several temperature differences, driving the Marangoni convection. The simulation results indicate that the flow and concentration fields are axisymmetric for Ma _T < 625 and become oscillatory and 3-D for higher values. It was found that the maximum Si concentration difference at the growth interface decreases as thermal Marangoni number increases due to higher flow velocities in the vicinity of the interface. However, temporal fluctuations of Si concentration at the interface increase at higher thermal Marangoni numbers. The effects of aspect ratio (A _r) were also considered in the model. It was found that the aspect ratio of the melt in the crucible has a prominent influence on the flow pattern in the melt which, in turn, effects the Si concentration at the growth interface.     

Room-temperature CO2 sensing using metal-insulator-semiconductor capacitors comprising atomic-layer-deposited La2O3 thin films

Room temperature detection of CO₂ using metal-insulator-silicon (MIS) devices is reported. These devices comprise atomic layer deposited La₂O₃ thin films as the gas-sensitive dielectric layer and Pt, Pt/Ta and Al as the electrodes. Physical mechanisms that lead to the detection of CO₂ at room temperature are discussed.     

Micro-hotplates for high-throughput thin film processing and in situ phase transformation characterization

This paper presents the use of micro-hotplates (MHPs) as thermal processing and in situ characterization platforms for phase transformations in thin films. MHPs are fabricated by microsystem technology processes and consist of a SiO₂/Si₃N₄ membrane (app. 1 μm) supported by a bulk Si frame. Several embedded Pt thin films serve as heater and electrical measurement electrodes. It is shown that the MHPs have unique properties for the controlled annealing of thin film materials (up to 1270 K), as the annealing temperature and heating/cooling rates can be precisely controlled by in situ measurements. These rates can be extremely high (up to 10⁴ K/s), due to the low thermal mass of MHPs. The high cooling rates are especially useful for the fabrication of metastable phases (e.g. Fe₇₀Pd₃₀) by quenching. By measuring the resistivity of a thin film under test in situ as a function of the MHP temperature, microstructural changes (e.g. phase transformations) can be detected during heating and cooling cycles. In this paper, examples are presented for the determination of phase transitions in thin films using MHPs: the solid–liquid–gas phase transition (Al), the ferromagnetic–paramagnetic phase transition (Fe–Pt) and martensitic transformations (Ni–Ti–Cu, Fe–Pd). Furthermore, it is demonstrated that crystallization processes from amorphous to crystalline (Ni–Ti–Cu) can be detected with this method. Finally the application of MHPs in thin film combinatorial materials science and high-throughput experimentation is described.     

In2O3 + xBaO (x = 0.5-5 at.%) - A novel material for trace level detection of NOx in the ambient

Indium oxide (In₂O₃) doped with 0.5-5 at.% of Ba was examined for their response towards trace levels of NO_x in the ambient. Crystallographic phase studies, electrical conductivity and sensor studies for NO_x with cross interference for hydrogen, petroleum gas (PG) and ammonia were carried out. Bulk compositions with x ≤ 1 at.% of Ba exhibited high response towards NO_x with extremely low cross interference for hydrogen, PG and ammonia, offering high selectivity. Thin films of 0.5 at.% Ba doped In₂O₃ were deposited using pulsed laser deposition technique using an excimer laser (KrF) operating at a wavelength of (λ) 248 nm with a fluence of ∼3 J/cm² and pulsed at 10 Hz. Thin film sensors exhibited better response towards 3 ppm NO_x quite reliably and reproducibly and offer the potential to develop NO_x sensors (Threshold limit value of NO₂ and NO is 3 and 25 ppm, respectively).     

On Steiner minimal trees withLp distance

LetL _p be the plane with the distanced _p (A ₁ ,A ₂ ) = (¦x ₁ –x ₂¦ ^p + ¦y₁ –y ₂¦^p)^/1p wherex _i andy _i are the cartesian coordinates of the pointA _i . LetP be a finite set of points inL _p . We consider Steiner minimal trees onP. It is proved that, for 1 <p < , each Steiner point is of degree exactly three. Define the Steiner ratio _p to be inf{L _s (P)/L _m (P)¦PL _p } whereL _s (P) andL _m (P) are lengths of the Steiner minimal tree and the minimal spanning tree onP, respectively. Hwang showed ₁ = 2/3. Chung and Graham proved ₂ > 0.842. We prove in this paper that {} = 2/3 and (2/2)_{12 p} 3/2 for anyp.This work was supported in part by the National Science Foundation of China and the President Foundation of Academia Sinica.     

A route to high sensitivity and rapid response Nb2O5-based gas sensors: TiO2 doping, surface embossing, and voltage optimization

We report a novel route for the fabrication of highly sensitive and rapidly responding Nb₂O₅-based thin film gas sensors. TiO₂ doping of Nb₂O₅ films is carried out by co-sputtering without the formation of secondary phases and the surface area of TiO₂-doped Nb₂O₅ films is increased via the use of colloidal templates composed of sacrificial polystyrene beads. The gas sensitivity of Nb₂O₅ films is enhanced through both the TiO₂ doping and the surface embossing. An additional enhancement on the gas sensitivity is obtained by the optimization of the bias voltage applied between interdigitated electrodes beneath Nb₂O₅-based film. More excitingly, such a voltage optimization leads to a substantial decrease in response time. Upon exposure to 50 ppm CO at 350 °C, a gas sensor based on TiO₂-doped Nb₂O₅ film with embossed surface morphology exhibits a very high sensitivity of 475% change in resistance and a rapid response time of 8 s under 3 V, whereas a sensor based on plain Nb₂O₅ film shows a 70% resistance change and a response time of 65 s under 1 V. Thermal stability tests of our Nb₂O₅-based sensor reveal excellent reliability which is of particular importance for application as resistive sensors for a variety gases.     

Stability and robustness analysis of MIMO MRAC using Kp = L 2 D 2 S 2 factorization

For a class of MIMO systems with input and output unmodeled dynamics, bounded disturbances and any relative degree, using the idea of K_p = L ₂ D ₂ S ₂ factorization, the design and analysis of robust direct model reference adaptive control are further investigated in this article. By establishing the L_p and L _2δ relationship properties between the input and output, multivariable swapping lemmas and relating all the signals in the closed-loop system with the normalizing signal, stability and robustness of adaptive system are analyzed rigorously. Compared with the existing results, the proof procedure is more compact and simple. A simulation example verifies the effectiveness of the control scheme.     

Delay-dependent robust H ∞ control for uncertain fuzzy Markovian jump systems

This paper is concerned with the problem of delay-dependent robust H _∞ control for uncertain fuzzy Markovian jump systems with time delays. The purpose is to design a mode-dependent state-feedback fuzzy controller such that the closed-loop system is robustly stochastically stable and satisfies an H _∞ performance level. By introducing slack matrix variables, a delay-dependent sufficient condition for the solvability of the problem is proposed in terms of linear matrix inequalities. An illustrative example is finally given to show the applicability and effectiveness of the proposed method. Recommended by Editorial Board member Young Soo Suh under the direction of Editor Jae Weon Choi. This work is supported by the National Science Foundation for Distinguished Young Scholars of P. R. China under Grant 60625303, the Specialized Research Fund for the Doctoral Program of Higher Education under Grant 20060288021, and the Natural Science Foundation of Jiangsu Province under Grant BK2008047. Yashun Zhang received the B.S. and M.S. degrees in Control Science and Control Engineering from Hefei University of Science and Technology in 2003 and 2006. He is currently a Ph.D. student in Control Science and Control Engineering, Nanjing University of Science and Technology. His research interests include fuzzy control, sliding mode control and nonlinear control. Shengyuan Xu received the Ph.D. degree in Control Science and Control Engineering from Nanjing University of Science and Technology in 1999. His research interests include robust filtering and control, singular systems, time-delay systems and nonlinear systems. Jihui Zhang is a Professor in the School of Automation Engineering of Qingdao University, China. His main areas of interest are discrete event dynamic systems, production planning and control, and operations research.     

Development of SAW-based multi-gas sensor for simultaneous detection of CO2 and NO2

A 440 MHz wireless and passive surface acoustic wave (SAW)-based multi-gas sensor integrated with a temperature sensor was developed on a 41° YX LiNbO₃ piezoelectric substrate for the simultaneous detection of CO₂, NO₂, and temperature. The developed sensor was composed of a SAW reflective delay lines structured by an interdigital transducer (IDT), ten reflectors, a CO₂ sensitive film (Teflon AF 2400), and a NO₂ sensitive film (indium tin oxide). Teflon AF 2400 was used for the CO₂ sensitive film because it provides a high CO₂ solubility, with good permeability and selectivity. For the NO₂ sensitive film, indium tin oxide (ITO) was used. Coupling of mode (COM) modeling was conducted to determine the optimal device parameters prior to fabrication. Using the parameters determined by the simulation results, the device was fabricated and then wirelessly measured using a network analyzer. The measured reflective coefficient S₁₁ in the time domain showed high signal/noise (S/N) ratio, small signal attenuation, and few spurious peaks. The time positions of the reflection peaks were well matched with the predicted values from the simulation. High sensitivity and selectivity were observed at each target gas testing. The obtained sensitivity was 2.12°/ppm for CO₂ and 51.5°/ppm for NO₂, respectively. With the integrated temperature sensor, temperature compensation was also performed during gas sensitivity evaluation process.     

An organic field effect transistor as a selective NOx sensor operated at room temperature

A solution processable decyl alkyl chain functionalised 9,10-ter-anthryleneethynylene (D_3A) amorphous organic semiconductor, endowed with good stability in air, has been investigated as NO_x OTFT sensor. The D_3A OTFT operated at room temperature exhibited differential sensitivity to NO and NO₂. NO₂ detection down to 250 ppb could be achieved with very low cross sensitivity to interfering species such as carbon monoxide and hydrogen sulphide.     

On the gap between H2 and entropy performance measures in H∞ control design

Recent papers have considered the problem of minimizing an entropy functional subject to an H_∞ performance constraint. Since the entropy is an upper bound for the H₂ cost, there remains a gap between entropy minimization and H₂ minimization. In this paper we consider a generalized cost functional involving both H₂ and entropy aspects. This approach thus provides a means for optimizing H₂ performance within H_∞ control design.