离子注入法制备GaAsl量子阱集成多波长发光芯片

报道了用离子注入方法和组合技术制备的ＡｌＧａＡｓ／ＧａＡｓ单量子阱多波长发光集成芯片,利用量子阱果面混合原理在同一块ＧａＡｓ衬底片上获得了２０多个发光波长从７８７￣７２４ｎｍ的ＧａＡｓ量子阱发光单元,研究了不同剂量的Ａｓ和Ｈ离子分别单独注入和迭加组合注入对量子阱发光峰位的影响,采用了组事技术和离子注入技术大大筒化了制备工艺过程,这种上发光芯片对于波分复用器件和建立离子注入数据库等方面都有重要的意义     

GaN基蓝色发光材料与器件

近年，作为绿色，蓝绿色，蓝色和蓝紫色发光材料，Ⅲ族氮化物，如ＡｌＮ，ＧａＮ，ＩｎＮ，ＩｎＧａｎ，ＡｌＧａＮ的研究引起了人们的广泛关注。本文主要介绍了ＧａＮ基蓝色发光材料发光器件的设备，特性及其应用。     

Gaq3有机薄膜电致发光器件

首次报道了采用８－羟基喹啉镓螯合物作为发光层制备有机薄膜电致发光器件，器件的结构为：ＩＴＯ导电玻璃／ＴＰＤ／Ｇａｑ３／Ａｌ。研究了Ｇａｑ３薄膜的光致发光和器件的电致发光机理，同时测量和研究了器件的电流密度－－电压（Ｊ－Ｖ）特性和发光亮度－电压（Ｂ－Ｖ）特性。结果表明器件的电致发光峰值波长为５４０ｎｍ，在２０Ｖ直流电压驱动下的最大发光亮度约２５００ｃｄ／ｍ＾２明显高于上同结构和工艺参数制备的Ａｌｑ３     

有机小分子掺杂的聚合物共混发光二极管

报道了用可溶性发光材料聚（２,５－二丁氧基苯）做发光材料,分别与母体聚合物聚乙烯基咔唑（ＰＶＫ）和聚甲基丙烯酸甲脂（ＰＭＭＡ）共混,并掺杂电子传输材料叔丁基联苯基苯基口恶二唑和空穴传输材料二胺衍生物作发光层,用铟锡氧化物和铝分别作正负电极,制作了两种蓝紫光有机／聚合物单层发光器件。通过比较两种器件的器件特性,发现以ＰＭＭＡ做母体的器件比用ＰＶＫ做母体的器件有更好的稳定性,器件开启电压为１０Ｖ左右,发光峰值波长均位于４２４ｎｍ,电致发光效率可达２．９％,比用ＰＶＫ做母体的器件效率高一倍多。     

快速退火Mg∶GaN的光致发光研究

本文报道利用ＬＰ－ＭＯＣＶＤ在Ａｌ２Ｏ３衬底上生长Ｍｇ∶ＧａＮ,在Ｎ２气氛下,经高温快速退火,然后进行光致发光测量．分析发现光致发光谱可以分解成４１０ｎｍ和４５０ｎｍ两个发光峰的叠加,本文对这两个峰的来源作了探讨,提出深Ｎ空位能级到Ｍｇ有关能级的跃迁机制的解释     

GaAs/AlGaAs谐振腔增强型光探测器的实现及其特性研究

本文报导ＧａＡｓ／ＡｌＡｇＡｓ谐振腔增强型（ＲＣＥ）光探测器的实验研究结果,并对器件的特性进行了理论分析。通过实验验证了ＲＣＥ器件谐振腔两个镜面的反射率随着波长的变化以及器件分层结构折射率差二者对器件性能的影响,并证明了分析理论的正确性。器件在８１０ｎｍ附近的响应峰的３ｄＢ谱线宽度约为２０ｎｍ,最大量子效率约为１１％。该光探测器具有较好的波长选择特性,将会成为波分复用（ＷＤＭ）光纤通信系统中比较理     

快速退火Mg：GaN的光致发光研究

本文报道利用ＬＰ－ＭＯＣＶＤ在Ａｌ２Ｏ３衬底上生长Ｍｇ：ＧａＮ,在Ｎ２气氛下,经高温快速退火,然后进行光致发光测量。分析发现光致发光谱可以分解成４１０ｎｍ和４５０ｎｍ两个发光峰的叠加,本文对这两个峰的醚源作了探讨,提出深Ｎ空位能级到Ｍｇ有关能级的跃迁机制的解释。     

AlGaInP高亮度发光二极管

分析了ＡｌＧａＩｎＰ材料的特点和ＡｌＧａＩｎＰ高亮度发光二极管发光效率的决定因素,对目前国际上研究比较成熟的一些典型结构进行了综合分析,从理论上指出ＡｌＧａＩｎＰ发光二极管在橙黄波段的发光效率的最终决定因素是光的提取效率,而在黄绿波段是发光二极管的内量子效率。并利用ＬＰ－ＭＯＣＶＤ技术制备了ｃｄ级橙黄高亮度发光二极管,发光波长峰值在６０５ｎｍ,ＦＷＨＭ为１８．３ｎｍ,２０ｍＡ工作电流下,５．０８ｃｍ（２英寸）外延片管芯平均轴向发光强度为２０ｍｃｄ,最大３０ｍｃｄ,平均工作电压１．９Ｖ,透明峰值角度２θ１／２＝１５°时轴向发光强度达到１０００ｍｃｄ。     

掺杂聚合物薄膜黄绿发光二极管

在具有电致发光的有机聚合物薄膜ｐｏｌｙ(２－ｍｅｔｈｙｏｘｙ－５－ｅｔｈｙｌｏｘｙ)－４－ｄｉ－(２－ｍｅｔｈｙｏｘｙ－５－ｏｃｔａｏｘｙ)－ｐｈｅｎｙｌｏｎｅ－ｖｉｎｙｌｅｎｅ(简称 ＭＥＭＯ－ＰＰＶ)中掺入一种高荧光量子效率的染料罗丹明６Ｇ(Ｒ６Ｇ),用旋转涂敷的方法获得了发光层,同时将其作为空穴传输层,以８－羟基＠$铝(８－Ａｌｑ３)作为电子传输层,得到了多层有机发光二极管ＩＴＯ/ＰＰＶ:Ｒ６Ｇ/Ａｌｑ３/Ａｌ．该器件峰值波长为５５０ｎｍ,发黄绿光．研究结果表明:不同掺杂浓度对器件发光光谱产生较大影响;通过掺杂,可显著提高器件的稳定性．在１８Ｖ下,器件的亮度达到３６００ｃｄ/ｍ２,外量子效率达３．２%．     

MBE生长InGaAs／GaAs应变层单量子阱激光器结构材料的研究

采用ＶａｒｉａｎＧｅｎⅡＭＢＥ生长系统研究了ＩｎＧａＡｓ／ＧａＡｓ应变层单量子阶（ＳＳＱＷ）激光器结构材料。通过ＭＢＥ生长实验，探索了Ｉｎ＿ｘＧａ＿（１－ｘ）ｔＡｓ／ＧａＡｓＳＳＱＷ激光器发射波长（λ）与Ｉｎ组分（ｘ）和阱宽（Ｌ＿ｚ）的关系，并与理论计算作了比较，两者符合得很好。还研究了材料生长参数对器件性能的影响，主要包括：Ⅴ／Ⅲ束流比，量子阱结构的生长温度Ｔ＿ｇ（ＱＷ），生长速率和掺杂浓度对激光器波长、阈值电流密度、微分量子效率和器件串联电阻的影响。以此为基础，通过优化器件结构和ＭＢＥ生长条件，获得了性能优异的Ｉｎ＿（０．２）Ｇａ＿（０．８）Ａｓ／ＧａＡｓ应变层单量子阱激光器：其次长为９６３ｎｍ，阈值电流密度为１３５Ａ／ｃｍ￣２，微分量子效率为３５．１％。     

Nano graphite platelets enhanced blue emission in alternating current field induced polymer based electroluminescence devices using Poly (9,9-dioctylfluorenyl-2,7-diyl) as the emitter

We report a simple way of enhancing blue emission in Poly (9,9-dioctylfluorenyl-2,7-diyl) (PFO) based alternating current field driven electroluminescence devices by mixing graphite nano platelets in the emission layer. Significantly strong and well resolved blue peaks at 437 nm and 470 nm are observed both in the devices’ electroluminescence and photoluminescence spectra with the presence of graphite nano platelets. The origin of this strong blue emission has been identified as the PFO’s beta-phase formation confirmed by transmission electron microscopy images and UV–Vis absorption spectra. The nano platelets loading in PFO solution can be controlled by the dispersion time in organic solvents. When the loading increases, the green emission in the electroluminescence spectrum can be reduced. This technique has been found useful in the generation of bright white light when illuminating through down conversion phosphor.     

Zn(BTZ)2发光层厚度对白色电致发光器件发光光谱的影响

制备了结构为ITO／TPD／Zn（BTZ）2Al的有机电致发光（EL）器件，经测试发现，Zn（BTZ）2发光层厚度对器件EL光谱有较大影响。当Zn（BTZ）2层厚度分别被控制在50和80nm时，EL谱中都只有1个峰，其峰值分别为580和470nm；当Zn（BTZ）2层厚度被控制在50～80nm时，EL谱同时出现470和580nm的2个峰，且它们的相对发光强度与Zn（BTZ）2层厚度也有关系，随着Zn（BTZ）2层厚度越接近80nm（或50nm）时，EL谱峰值为470nm的光就相对越强（或弱），峰值为580nm的光就相对越弱（或强）。通过调整Zn（BTZ）2层厚度，在65nm左右时得到色度较好的白光器件，其色坐标为（0．33，0．33）。为了研究器件的光致发光（PL）谱，制备结构为TPD／Zn（BTZ）2的有机薄膜，经测试发现，薄膜PL谱与Zn（BTZ）2层厚度无关，其光谱峰值在480nm处，与相关文献报道一致。对上述现象进行了分析。     

Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

We report on the electroluminescence from silicon-based metal–insulator–semiconductor (MIS) diodes with arrays of self-assembled Ge(Si) nanoislands. Aluminum oxide (Al₂O₃) is used as an insulator material in the MIS contact. Variations in the electroluminescence spectra caused by changing the metal work function are examined. The intense electroluminescence from Ge(Si) nanoislands localized at a distance of 50 nm from the insulator–semiconductor interface is observed at room temperature. The emission spectrum is found to be controlled by choosing the design of the semiconductor structure and the barrier height for injected carriers.     

Electroluminescence from Au/Si/SiO2/p-Si structure

Si/SiO₂ films have been grown using the two-target alternation magnetron sputtering technique. The thickness of the SiO₂ layer in all the films was 8 nm and that of the Si layer in five types of the films ranged from 4 to 20 nm in steps of 4 nm. Visible electroluminescence (EL) has been observed from the Au/Si/SiO₂/p-Si structures at a forward bias of 5 V or larger. A broad band with one peak 650–660 nm appears in all the EL spectra of the structures. The effects of the thickness of the Si layer in the Si/SiO₂ films and of input electrical power on the EL spectra are studied systematically.     

Bulk-like Al/Ag bilayer film due to suppression of surface plasmon resonance for high transparent organic light emitting diodes

We demonstrate the enhanced optical and electrical properties of an ultrathin silver (Ag) film by applying an aluminum (Al) seed layer between LiF and Ag as a transparent cathode for higher-transparency organic light-emitting diodes (OLEDs). Although the thickness ranges from 4 to 8 nm, the ultrathin Ag film is a continuous and uniform bulk-like film with an Al seed layer, which suppresses the surface plasmon absorption. Compared to an Ag-only cathode, the measured transmittance spectra were considerably increased, comparable with the theoretical calculations of a bulk Al/Ag bilayer film. The Al/Ag bilayer cathode has a transmittance of 87% at a 550 nm wavelength and a sheet resistance of 19.5 Ω/sq with a 4-nm-thick Ag layer. The transparent OLED devices that employed the Al/Ag cathode showed a transmittance of 72% at a 550 nm wavelength for an Ag thickness of 6 nm.     

Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys

In this paper, we present the results of the white light-emitting diodes (LEDs) construction based on GaPAsN semiconductor alloys on a GaP substrate. Heterostructure electroluminescence with a continuous emission spectrum in the range from 350 nm to 1050 nm is observed. The output of light through the side walls and the face side of the sample enabled us to achieve white light emission by means of ultra-wide electroluminescence spectrum covering all visible spectrum and part of the near IR spectral range. While extracting emission through substrate, the short-wavelength part of the visible spectra is absorbed at GaP layer.     

Nature and spatial localization of electroluminescence sources in the metal-composite layer-semiconductor structures

Variations in the electroluminescence spectra and intensity of the metal-composite layer-semiconductor (Au-SiO _x N _y (Si)-cSi) structures as functions of the characteristics of the luminescent-active transition region at the interface of the cSi substrate and the SiO _x N _y (Si) composite layer are studied. New information on localization of the electroluminescence sources in the transition region is obtained. It is found that the transition region contains various luminescence-active silicon inclusions, which contribute to both the short-wavelength (λ ≈ 500–1000 nm) and long-wavelength (λ ≈ 1000–1600 nm) branches of electroluminescence. The effect of technological factors on the electroluminescence spectra, intensity, and quantum efficiency is analyzed.     

Solution‐Processible Blue‐Light‐Emitting Polymers Based on Alkoxy‐Substituted Poly(spirobifluorene)

Alkoxy‐substituted poly(spirobifluorene)s and their copolymers with a triphenylamine derivative have been synthesized by Ni(0)‐mediated polymerization. The polymers were well soluble in common organic solvents. Pure blue‐light emissions without the long wavelength emission of poly(fluorene)s have been observed in the fluorescence spectra of polymer thin films. The light emitting diodes with a device configuration of ITO/PEDT:PSS(30 nm)/polymer(60 nm)/LiF(1 nm)/Al(100 nm) have been fabricated. The electroluminescence spectra showed the blue emissions without the long wavelength emission as observed in the fluorescence spectra. The relatively poor electroluminescence quantum yield of the homopolymer (0.017% @ 20 mA/cm²) with color coordinates of (0.16, 0.07) has been improved by the introduction of triphenylamine moiety, and the copolymer with triphenylamine derivative exhibited an electroluminescence quantum yield of 0.15 % at 20 mA/cm² with color coordinates of (0.16, 0.08). Moreover, the introduction of polar side chains to the spirobifluorene moiety enhanced the device performance and led to the quantum yields of 0.6 to 0.7 % at 20 mA/cm², although there was some expense of color purities.     

Electroluminescence spectroscopy for reliability investigations of 1.55 μm bulk semiconductor optical amplifier

This paper demonstrates the complementary relation between functional parameters and electroluminescence spectroscopy for reliability investigations of 1550 nm Semiconductor Optical Amplifiers of 700 μm length active region. Ageing tests have been set to 270 mA-100 °C-1500 h and realized on two different wafers showing more impact on wafer 1 than on wafer 2. Our investigations are particularly focused on interpretation of electroluminescence spectra, from reference and aged SOAs of wafer 1, leading to an improvement of degradation mechanisms understanding. The shift rate to lower energies of the recombination energy peak at 1550 nm, as reported by electroluminescence spectra between reference and aged SOAs in relation with the decrease of optical power measured at 200 mA for the degraded SOA and completed by I(V) characterizations, suggest occurrence of non radiative deep centers near the buried ridge structure in relation with the cleaning process uniformity of interfaces before epitaxial overgrowth. These defects mainly trap majority injected carriers instead of minority carriers reducing the luminescence in the active zone. By monitoring the most sensitive failure indicator (pseudo-threshold current), lifetime distributions are also calculated to determine failure rate, between 150 and 200 FITs over 15 years for operating conditions (25 °C-200 mA) using experimental degradation laws and statistic computations, demonstrating the overall robustness of this technology.     

Electroluminescence spectra of ultraviolet light-emitting diodes based on <Emphasis Type="Italic">p</Emphasis>-<Emphasis Type="Italic">n</Emphasis>-heterostructures coated with phosphors

The electroluminescence spectra of light-emitting diodes based on p-n heterostructures of the InGaN/AlGaN/GaN type are studied in the near-ultraviolet spectral region (360–405 nm). The spectra are peaked at the wavelengths 385 and 395 nm, and the intensity of emission falls exponentially with the photon energy in the shorter-wavelength and longer-wavelength regions. The emitters in the green and yellow spectral regions based on these light-emitting diodes coated with silicate phosphors are studied. The luminescence spectra of phosphors have the Gaussian shape and maximums in the range from 525 to 560 nm. The color characteristics of emitters depend on the ratios of intensities of the ultraviolet and yellow-green bands. The possibilities of fabrication of light-emitting diodes of visible luminescence based on ultraviolet light-emitting diodes that excite colored phosphors are discussed.