刻蚀在导带边缘的PBG微带线

首次提出了一种新型的50Ω光子带隙(PBG)结构微带线。该PBG结构的制作是在金属导带边缘周期地刻蚀矩形和梯形结构,其微带线的阻带较深、较宽,且通带的波纹较小,与在金属导带或金属接地板上刻蚀周期性孔的通常PBG微带线相比,该新型PBG结构微带线的S参数特性较好。这种新型PBG结构的仿真结果得到了实验的证实。     

材料

0625794钴基氧化物热电材料研究现状与展望〔刊,中〕/李瑜煜//电源技术.—2006,30(8).—689-692(D)0625795填充液晶的光子晶体的光控可调光子带隙〔刊,中〕/谭春华//液晶与显示.—2006,21(4).—291-296(C)0625796刻蚀在导带边缘的PBG微带线〔刊,中〕/张友俊//压电与声光.—2006,28(4).—478-480(L)首次提出了一种新型的50Ω光子带隙(PBG)结构微带线。该PBG结构的制作是在金属导带边缘周期地刻蚀矩形和梯形结构,其微带线的阻带较深、较宽,且通带的波纹较小,与在金属导带或金属接地板上刻蚀周期性孔的通常PBG微带线相比,该新型PBG结构…     

一种基于缺陷地结构的超宽阻带低通滤波器CSCD

提出了一种在微带线下的新型缺陷地结构（DGS）,并对其性能进行了分析。将传统的DGS结构单元与新型DGS结构单元结合,采用低阻抗微带线,设计了一种超宽阻带低通滤波器。传统哑铃型DGS结构在较宽的阻带内提供衰减,新型DGS结构提供陡峭的阻带衰减响应,得到陡峭的阻带衰减和良好的阻带宽度。模拟仿真和实物测试表明,该滤波器的3 d B截止频率为1.8 GHz,插损小于1 d B,通带内S11均低于–20 d B,阻带在–20 d B以下的频段为2.9219.59 GHz。与传统DGS低通滤波器相比,其尺寸减少了32%,实现了低通滤波器的宽阻带和小型化。     

一种紧凑型微带三频滤波器的设计

提出了一种新型微带三频滤波器,滤波器由两个弯折并相互嵌套的分支线谐振器和一个T形谐振器组成。谐振器之间相互耦合,得到三通带频率响应特性。该滤波器可通过调节微带线几何参数改变通带位置以及带宽,以满足不同应用需求。这种结构的滤波器结构紧凑,电路面积小,三个通带两边各引入一个传输零点,增强了通带间的隔离度以及阻带抑制特性。设计并制作了一款1.57/3.55/5.2GHz三通带滤波器,测试结果与仿真结果基本相符,验证了该滤波器结构的有效性。     

一种新颖的PBG宽阻带低通滤波器

 本文首次提出综合PBG结构和微带线结构两因素,来设计滤波器的概念.与普通PBG结构滤波器不同的是,本文采用具有T形和十字形短截线的微带线代替直线微带线,在接地板上只需刻蚀一列PBG结构即可构成宽阻带低通滤波器.文中以T形短截线PBG结构的低通滤波器为例,运用时域有限差分法(FDTD),分析了在不同短截线长度和PBG结构方孔边长的情况下,该滤波器的传输特性.文中还给出了该滤波器和Rumsey方法与Kim方法设计的级联、并联两种PBG结构低通滤波器的传输特性的模拟结果及其对比分析.最后,文中给出了模拟结果和测试结果,来验证所设计的低通滤波器的有效性.     

一种新型微带光子带隙结构的优化设计

本文对一种渐变尺寸的新型光子带隙结构进行了优化设计。根据优化后得出的最优结构参数 ,设计出PBG结构。实验结果证明 ,这种优化后的新型结构可以在保持阻带抑制幅度的同时减小通带内的波纹     

谐振加载耦合微带线传输特性分析及其应用研究

对一种具有多传输零点特性的新型带阻结构-谐振加载耦合微带线的传输特性进行了系统研究.在建立奇偶模等效电路模型的基础上,首先分析在无限长周期条件下该结构基本的通带-阻带响应;然后考察不同端口阻抗和负载对使用单个单元的滤波器通带和阻带频响特性的影响.并据此提出了一种具有插入损耗低,时域特性平坦特点的宽阻带低通滤波器设计方法.由于该设计方法完全采用闭式解析公式计算,故具有快速有效的优点.最后,采用上述方法设计研制了一个截止频率为2.4GHz的低通滤波器.其通带内插损小于0.1dB,衰减大于20dB的阻带宽度大于7.2GHz(3.6GHz-10.8GHz).     

基于DGS的紧凑型低通滤波器

文中提出一种基于缺陷地结构的新型低通滤波器。其由位于微带结构顶部的加宽微带线、位于接地层中的经典哑铃型缺陷地结构（DGS）和蛇形缝隙缺陷地结构（DGS）组成,结构设计紧凑,容易调整。文中选用0.01 dB等波纹的切比雪夫型低通滤波器,分别采用哑铃型DGS、蛇形缝隙DGS替换LPF原型电路中的电感,加宽微带线替换并联电容,同时将加宽微带线产生的寄生电感考虑进去。哑铃型DGS产生的高频衰减点加宽阻带,蛇形缝隙DGS提供的低频衰减点使得通带到阻带陡峭过渡。实验结果表明,所设计的截止频率为2.54 GHz的低通滤波器具有明显的截止频率响应,通带内插损均在0.9dB以下,阻带抑制均在21dB以下。经实物加工测试验证,所设计的低通滤波器实际结果与仿真结果基本一致,具有可行性。     

一种新颖的小型宽阻带低通滤波器

提出了一种新颖的具有C-型几何结构的小型宽阻带低通滤波器.通过弯曲微带线,缩减了低通滤波器尺寸.采用补偿线和渐变技术对微带线进行调整,使所提出的低通滤波器获得了低插损,同时获得宽阻带.对提出的结构作了加工并进行了实物测量,结果表明,所设计滤波器的通带反射损耗的最大旁瓣幅度为-19.5 dB,阻带(S21<-20 dB)宽度为10.1 GHz,而且面积只有6.28 cm2.     

1D非周期缺陷地结构微带线

针对50?微带线提出了新型一维非周期缺陷地结构(DGS)电路,不同于周期DGS,新型的DGS单元晶格是非周期的。设计、制造、测试了两个改进的缺陷地结构电路,测试结果表明该新型DGS可以产生通带和较宽的阻带。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.