高浓度掺杂Ir(ppy)3和Rubrene的高效率有机发光器件

通过采用CBP主体材料中高浓度掺杂Ir(ppy)a和Rubrene,利用Ir(ppy)3敏化黄光发射的方法,制备了高性能的有机电致发光器件(OLED).器件采用的结构为:ITO/2T-NATA(20 nm)/NPBX(40 nm)/x%CBP:y%(ppy)3:z%rubrene(20 nm)/NPBX(10 nm)/DPVBi(60 nm)/Alq(60 nm)/LiF(1 nm)/Al,在该器件中限定.各功能层的厚度保持不变,当CBP、Ir(ppy)3、Rubrene各组分的比例x、y、z分别为:65%、20%、15%时,器件的性能较好,在电压为12 V时,其电流效率最大为21.1 ed/A.在电压为24 V时,其亮度为最大,达到22 670 ca/m2.该器件的色度随电压的增加逐步趋近于白光等能点(0.33,0.33).     

电子传输层中掺杂Ir(ppy)3改善白光OLED的效率

采用真空热蒸镀技术,制备了结构为ITO/NPBX(40nm)/rubrene(0.2 nm)/NPBX(5nm)/DPVBi(30nm)/TPBi:x%Ir(ppy)3(30nm)/LiF/Al的白光器件。利用Ir(ppy)3掺杂到电子传输层TPBi中,在掺杂层中提高了电子的迁移率,调整了空穴和电子的平衡,从而改善了白色有机电致发光器件的效率。当Ir(ppy)3的掺杂浓度为6%时,器件的电流效率最高,在驱动电压9 V时最大电流效率为10.66 cd/A,此时色坐标为(0.36,0.38);当电子传输层TPBi中不掺杂Ir(ppy)3时,白光器件的效率最低,在驱动电压10V时最大电流效率为1.69 cd/A,此时色坐标为(0.31,0.30)。掺杂浓度为6%的白光器件的电流效率是不掺杂白光器件的电流效率的6.3倍。     

(t-bt)2Ir(acac)超薄层厚度对有机电致发光器件性能的影响

以新型铱配合物黄光磷光染料bis[2-(4-tertbutylphenyl)benzothiazolato-N,C2']iridium(acetylacetonate)[(tbt)2Ir(acac)]为超薄层,制备了结构为indium tin oxide(ITO)/N,N'-bis(naphthalen-1-yl)-N...     

发光层混合掺杂的白光OLED器件

制备了白光OLED器件,器件结构为:ITO/2T-NATA(15nm)/NPB(25nm)/ADN:TBPe[(20-x)]nm、ADN:TBPe:DCJTB(xnm)/Alq3(20nm)/LiF(1nm)/Al(100nm)。研究了ADN:TBPE:DCJTB层厚度从0～8nm变化时对器件发光的影响。实验结果表明,当ADN:TBPE:DCJTB层厚度为0时,器件发蓝光;随着ADN:TBPE:DCJTB层厚度的增加,器件发光的色坐标从蓝光区进入白光区,在ADN:TBPE:DCJTB层厚度为6～8nm时得到色坐标较好的白光器件。     

DCJTB掺杂浓度对OLED器件性能的影响(英文)

通过在发光层ADN∶TBPe∶DCJTB中改变DCJTB的掺杂浓度,得到了一种高效的白光OLED器件。考察了同一掺杂浓度TBPe下不同浓度的DCJTB的器件性能,发现当DCJTB掺杂浓度为1%(质量分数)时,器件获得最大电流效率6.6cd/A和最大功率效率3.21lm/W,此时亮度为10520cd/m2,对应的CIE坐标为(0.3186,0.3520)。通过改变DCJTB浓度,能够获得不同的器件颜色。     

基于ADN的非掺杂高效蓝色OLED器件

采用真空蒸镀的方法,制备了以ADN为发光层的高效率非掺杂蓝色有机电致发光器件.器件的结构为ITO/2T-NATA(15 nm)/NPBx(15 nm)/ADN(25+d nm)/BCP(8 nm)/ Alq_3(30 nm)/LiF(0.5 nm)/Al.通过调整ADN层的厚度,研究了器件的发光性能.测试结果表明,器件在6 V电压时电流效率达到最大,为2.77 cd/A;在16 V时亮度达到最大,为7 227 cd/m~2.当ADN的厚度为30 nm、器件的电压从5 V变化到16 V时,色坐标在(0.21,0.32)至(0.19,0.29)之间,均在蓝光区域.

Abstract：

Using ADN as the emitting layer, high efficient undoped blue organic light-emitting diodes(OLEDs) with a typical structure of (ITO)/ 2T-NATA(15 nm)/ NPBx(15 nm)/ ADN(25+d nm)/BCP(8 nm)/Alq_3 (30 nm)/LiF(0.5 nm)/Al were fabricated via thermal vacuum deposition method. This device has a maximum luminous efficiency of 2.77 cd/A at 6 V and maximum luminance of 7 227 cd/m~2 at 16 V. The CIE coordinates of the device are within the blue region when the thickness of ADN is 30 nm and the voltage changes among the range of 6～16 V.     

蓝绿色磷光OLED的制备及发光性能研究

以mCP为主体发光材料,蓝绿色磷光染料BGIr1作 为掺杂剂,制备了6种不同BGIr1掺杂量的蓝绿色磷光有机电致发光器件(OLED),研究了不 同掺杂量对蓝绿色磷光OLED器件发光特性的影 响。制得器件的结构为ITO/MoO₃(20nm)/NPB(40nm)/mCP:BGIr1(x%,30nm)/BCP(10nm)/Alq₃(20 nm)/LiF/Al(100nm),其中x%为发光层中磷光染料BGIr1的掺杂量(质量分数)。结果表明,BGIr1掺杂量 为18%时,获得器件的发光性能最佳。18% BGIr 1掺杂器件在488nm和 512nm处获得两个主发射峰,当电 流密度为26.5mA/cm²时,获得最大发光效率为6.2cd/A;在15V驱动电压下,获得最大亮度为6970cd/cm², CIE坐标为(0.17,0.31)。这说明,BGI r1掺杂改善了器件的发光亮度和色纯度,提高了器件的发光效率。     

蓝绿色磷光OLED的制备及发光性能研究

以mCP为主体发光材料,蓝绿色磷光染料BGIr1作为掺杂剂,制备了6种不同BGIr1掺杂量的蓝绿色磷光有机电致发光器件(OLED),研究了不同掺杂量对蓝绿色磷光OLED器件发光特性的影响。制得器件的结构为ITO/MoO3(20nm)/NPB(40nm)/mCP:BGIr1(x%,30nm)/BCP(10nm)/Alq3(20nm)/LiF/Al(100nm),其中x%为发光层中磷光染料BGIr1的掺杂量(质量分数)。结果表明,BGIr1掺杂量为18%时,获得器件的发光性能最佳。18%BGIr1掺杂器件在488nm和512nm处获得两个主发射峰,当电流密度为26.5mA/cm2时,获得最大发光效率为6.2cd/A;在15V驱动电压下,获得最大亮度为6 970cd/cm2,CIE坐标为(0.17,0.31)。这说明,BGIr1掺杂改善了器件的发光亮度和色纯度,提高了器件的发光效率。     

利用Ir(ppy)_3敏化CzHQZn提高OLED的性能

用CzHQZn作为受主,利用磷光敏化的方法制备了有机电致黄光和白光器件。黄光器件采用Ir(ppy)3掺杂4,4-N,N′-=咔唑基联苯(CBP),敏化新的黄光材料CzHQZn作为发光层,当发光层厚度为18nm时器件性能最好,最大发光效率为3.26cd/A(at10V),最大发光亮度为17560cd/m2(at10V);白光器件采用多发光层结构,结合ADN的蓝光复合发光,同时加入了电子阻挡层(NPBX)和空穴阻挡层(BCP),获得的白光器件最大发光效率为2.94cd/A(at8V),最大亮度为11089cd/m2(at13V)。     

通过Ir(ppy)3敏化黄光发射的白色有机电致发光器件

通过Ir(ppy)3的磷光敏化作用,制作了结构为:ITO/2T-NATA(20 nm)/NPBX(20 mm)/CPB∶x%Ir(ppy)3∶0.5%rubrene(8 nm)/NPBX(5 nm)/DPVBi(30 nm)/Alq(30 nm)/LiF(0.5 nm)/Al的有机白光器件.当Ir(ppy)3的掺杂浓度为6%时,器件的性能最好.在15 V的电压下最大亮度达到24 960 cd/m2,在电压为8 V的情况下,发光效率达到最大,为5.17 cd/A.该器件的色坐标在白光等能点附近,是色度较好的白光器件.     

High-efficiency orange and white phosphorescent organic light-emitting diodes based on homojunction structure

We demonstrate high-efficiency orange and white phosphorescent organic light-emitting diodes based on homojunction structure. Excellent performance is realized by using step-graded p- and n-type doping structure in orange homojunction device. The resulting orange homojunction device exhibits a maximum current efficiency of 30.0 cd/A and low efficiency roll-off. The improvements are mainly attributed to the utilization of step-graded doped profile, which facilitates balanced charge carrier injection and transport. Moreover, one optimized white homojunction device based on two complementary colors shows a maximum efficiency of 15.4 cd/A, and superior color-stability in a wide range of luminance.     

Efficient non-doped monochrome and white phosphorescent organic light-emitting diodes based on ultrathin emissive layers

Efficient red, orange, green and blue monochrome phosphorescent organic light-emitting diodes (OLEDs) with simplified structure were fabricated based on ultrathin emissive layers. The maximum efficiencies of red, orange, green and blue OLEDs are 19.3 cd/A (17.3 lm/W), 45.7 cd/A (43.2 lm/W), 46.3 cd/A (41.6 lm/W) and 11.9 cd/A (9.2 lm/W). Moreover, efficient and color stable white OLEDs based on two complementary colors of orange/blue, three colors of red/orange/blue, and four colors of red/orange/green/blue were demonstrated. The two colors, three colors and four colors white OLEDs have maximum efficiencies of 30.9 cd/A (27.7 lm/W), 30.3 cd/A (27.2 lm/W) and 28.9 cd/A (26.0 lm/W), respectively. And we also discussed the emission mechanism of the designed monochrome and white devices.     

Efficient single layer RGB phosphorescent organic light-emitting diodes

We report efficient single layer red, green, and blue (RGB) phosphorescent organic light-emitting diodes (OLEDs) using a “direct hole injection into and transport on triplet dopant” strategy. In particular, red dopant tris(1-phenylisoquinoline)iridium [Ir(piq)₃], green dopant tris(2-phenylpyridine)iridium [Ir(ppy)₃], and blue dopant bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)iridium [FIrpic] were doped into an electron transporting 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi) host, respectively, to fabricate RGB single layer devices with indium tin oxide (ITO) anode and LiF/Al cathode. It is found that the maximum current efficiencies of the devices are 3.7, 34.5, and 6.8 cd/A, respectively. Moreover, by inserting a pure dopant buffer layer between the ITO anode and the emission layer, the efficiencies are improved to 4.9, 43.3, and 9.8 cd/A, respectively. It is worth noting that the current efficiency of the green simplified device was as high as 34.6 cd/A, even when the luminance was increased to 1000 cd/m² at an extremely low applied voltage of only 4.3 V. A simple accelerated aging test on the green device also shows the lifetime decay of the simplified device is better than that of a traditional multilayered one.     

Engineering of charge transport materials for universal low optimum doping concentration in phosphorescent organic light-emitting diodes

A universal low optimum doping concentration of below 5% was demonstrated in phosphorescent organic light-emitting diodes (PHOLEDs) by managing the energy levels of charge transport materials. The device performances of PHOLEDs could be optimized at a low doping concentration of 3% irrespective of the host material in the emitting layer. The suppression of charge trapping and hopping by the dopant through charge transport layer engineering optimized the device performance at low doping concentration. In addition, it was revealed that PHOLEDs with low optimum doping concentration show better quantum efficiency, low efficiency roll-off and low doping concentration dependency of the device performance.     

异质结堆叠发光层红色磷光有机发光二极管

本文采用主客体交错结构的发光层,即发光层是 由多组主体材料CBP和客体材料Ir(piq)₂(acac)异质结堆叠构成的。为了改善器件的性能 ,分别优化 了单主体层和单客体层的厚度。研 究表明,单主体层厚度为3~4 nm,单客体层厚度为0.3 nm时,器件能够获得的最大电流效率为3.92 cd/A,色纯度 和发光稳 定性俱佳,1mA工作电流下的CIE色坐标为(0.669,0.308),当工作电流从0.1 mA变化 到1mA,色度坐标的变化值(Δ(x,y)) 仅为(0.004,0.002)。所采用的 主客体交错发光层的制备方法,工艺简单,且因为能分别调整主客体层的厚度而改善因客体 分子聚集或因长程偶极子间相互作用对发光效率的影响,为非掺杂磷光有机发光二极管的制 备提供了思路。     

High-efficiency and superior color-stability white phosphorescent organic light-emitting diodes based on double mixed-host emission layers

We demonstrate high-efficiency and superior color-stability white phosphorescent organic light-emitting diodes based on double blue mixed-host emission layers (EMLs) with different mixed ratios. The key feature of the concept is to introduce double blue mixed-host EMLs with an orange ultrathin layer sandwiched between them. The improved white device without spacer or interlayer achieves superior color-stability and reduced efficiency roll-off, which are consistent with the good ambipolar conductivity of the mixed-host layer. Moreover, peak efficiency of 40.8 lm/W and low turn-on voltage of 2.71 V are realized. The double mixed-host EMLs concept proves to be quite useful in achieving excellent device performance.     

Synthesis and characterization of blue-emitting Ir(III) complexes with multi-functional ancillary ligands for solution-processed phosphorescent organic light-emitting diodes

A series of Ir(III) complexes, (dfpmpy)₂Ir(pic), (dfpmpy)₂Ir(EO₂-pic), (dfpmpy)₂Ir(pic-N-O), and (dfpmpy)₂Ir(EO₂-pic-N-O), containing 2-(2,4-difluorophenyl)-4-methylpyridine (dfpmpy) based main ligand with varying ancillary ligands such as picolinic acid (pic), 4-(2-ethoxyethoxy)picolinic acid (EO₂-pic), picolinic acid N-oxide (pic-N-O), and 4-(2-ethoxyethoxy)picolinic acid N-oxide (EO₂-pic-N-O), respectively were successfully synthesized for highly efficient blue phosphorescent organic light-emitting diodes (PhOLEDs). The photophysical, electrochemical, and electroluminescent (EL) properties were systematically correlated. The solubilizing 2-ethoxyethanol (EO₂-) group was attached to the ancillary ligand through tandem reaction. All of the Ir(III) complexes show high thermal stability and good photoluminescence quantum yields (Ф_pl) in film state. Solution-processed PhOLEDs were fabricated using these Ir(III) complexes as dopants and achieved a maximum external quantum efficiency (EQE) of 10.9% and current efficiency of 21.15 cd/A for (dfpmpy)₂Ir(EO₂-pic). All the Ir(III) complexes emitted blue light with color purity at the Commission Internationale de L’Eclairage (CIE) coordinates of (0.15, 0.31).     

Carbazole/triphenylamine-cyanobenzimidazole hybrid bipolar host materials for green phosphorescent organic light-emitting diodes

With a view to attain balanced charge flux for higher device performance of PhOLEDs, we have used carbazole/triphenyl amine as hole transporting moiety and cyano along with benzimidazole as electron transporting core in 3-Cbz-ImdCN, 4-Cbz-ImdCN and TPA-ImdCN. Their thermal, photophysical and electrochemical properties have been evaluated to shed light on structure-property-performance relationship. Good performances have been exhibited by these bipolar host materials in green PhOLEDs with maximum external quantum efficiencies were observed in the range of 5.3–11.5% using Ir(ppy)₃ emitter. Further, 3-Cbz-ImdCN hosted orange and red PhOLEDs with the Ir(MDQ)₂acac and Ir(piq)₂acac emitters revealed the external quantum efficiencies of 5.1% and 6.3%, respectively. In all the devices pure emission was observed from dopants only which clearly implies that the devices possess effective energy transfer from the host to the guest.     

High-performance green phosphorescent top-emitting organic light-emitting diodes based on FDTD optical simulation

We have successfully applied finite-difference time-domain (FDTD) method in top-emitting organic light-emitting diodes (TOLEDs) for structure optimization, demonstrating good agreement with experimental data. A mixed host with both hole transport and electron transport materials is employed for the green phosphorescent emitter to avoid charge accumulation and broaden the recombination zone. The resulting TOLEDs exhibit ultra-high efficiencies, low current efficiency roll-off, and a highly saturated color, as well as hardly detectable spectrum shift with viewing angles. In particular, a current efficiency of 127.0 cd/A at a luminance of 1000 cd/m² is obtained, and maintains to 116.3 cd/A at 10,000 cd/m².