光固化生物陶瓷功能化研究进展EI北大核心CSCD

光固化制备陶瓷成为近年来快速发展的增材制造技术之一。生物陶瓷材料凭借良好的细胞相容性,在组织工程领域具有广阔前景,然而单一的生物陶瓷材料难以兼顾力学性能与生物相容性,其应用与推广受到极大限制。本文综述了适用于光固化的生物陶瓷材料改性及设计方法,重点讨论了材料改性、表面改性、结构设计以及微结构调控对于骨传导、骨诱导、抗菌、促进血管生成等生物性能及基础力学性能的综合影响,并指出通过改性及调控方法的组合探究多功能的实现及相互影响机理,能够充分实现光固化生物陶瓷的功能,推动其深层次应用。     

形状记忆聚合物复合材料的研究进展EI北大核心CSCD

形状记忆聚合物复合材料已成为形状记忆材料的研究热点和重点,文中针对近年来形状记忆聚合物复合材料的最新研究进行了综述。分别对颗粒增强、纤维增强和颗粒纤维混合3类增强材料制备的形状记忆聚合物复合材料的结构与性能特点进行了分析和评述;着重阐述了形状记忆聚合物复合材料形状记忆效应的机理以及影响形状记忆行为的因素;分析了形状记忆聚合物复合材料研究中存在的问题,同时对形状记忆聚合物复合材料的应用前景进行了展望。     

高性能软磁合金的研究进展EI北大核心CSCD

软磁材料是一种极为重要且应用十分广泛的能源材料,近年来,随着磁性元件的日益高频化和小型化,以及节能环保的号召,开发和研究高性能软磁材料具有重要意义。本工作概述了软磁合金的发展历史,重点归纳出各类软磁合金(包括传统软磁合金、非晶/纳米晶软磁合金、高熵软磁合金)的成分、微观组织、磁性能以及应用范围,并总结出不同软磁合金的优、缺点;指出典型合金的微观组织对合金软磁性能(尤其矫顽力)具有关键性的主导作用,进而探讨了影响软磁合金矫顽力的因素及其微观机制,发现控制晶粒尺寸(或纳米粒子尺寸)是获得低矫顽力的关键,并描述了矫顽力的微观影响机制在高熵软磁合金中的发展;最后,展望了高熵软磁合金因多主元混合的成分特性带来的组织多样化,更有利于实现对合金性能的调控,并有望作为新一代高温软磁体材料。     

溅射功率对InZnO薄膜晶体管电学性能的影响研究北大核心CSCD

采用射频磁控溅射法,在室温下Si/SiO_(2)衬底上制备InZnO薄膜晶体管,并研究不同溅射功率(25,50,75和100 W)对InZnO薄膜晶体管电学性能的影响。XRD表征结果表明,不同溅射功率制备的InZnO薄膜均出现晶面为(002)面的多晶态结构。通过电学特性研究发现,当溅射功率为50 W时,电流的开关比为3×10^(7),场效应迁移率为14.8 cm^(2)V^(-1)s^(-1),阈值电压为0.82 V,亚阈值摆幅为0.38 V decade^(-1),界面缺陷态密度为1.1×10^(12)cm^(-2)eV^(-1)等获得最佳器件参数。这是因为功率50 W时用原子力显微镜测得InZnO薄膜表面粗糙度为0.86 nm,说明薄膜的表面比较平滑,表面缺陷密度较少,使InZnO薄膜沟道层和源漏电极形成了良好的接触。此外,XPS结果表明,当溅射功率为50 W时,能够有效控制氧空位缺陷,最终有效改善和提高InZnO薄膜晶体管的电学性能。     

柔性阻变存储器材料研究进展EI北大核心CSCD

本文简述了阻变存储器的基本结构、工作原理、发展历程和研究现状,归纳总结了柔性阻变存储器的材料体系,包括介质材料、电极材料和基底材料,以及柔性阻变存储器材料体系的总体趋势和最新研究进展;分析了柔性阻变存储器的性能特点,包括存储性能和力学性能。阐述了发展柔性阻变存储器的重要意义与面临的挑战,提出了该领域现在研究中存在的不足和未来需要进一步研究的方向。得出力学性能稳定的高电导可拉伸电极和存储性能稳定的可拉伸介质是柔性阻变存储器材料今后发展的主要方向。     

氮化物吸波材料研究进展EI北大核心CSCD

雷达隐身材料对提高武器装备的生存和防御能力具有重要意义.氮化物材料由于其自身优异的物理化学性能,有望成为一种新型吸波应用材料.本文总结了近年来氮化物吸波材料的研究进展,论述了氮化钛、氮化铁、氮化锰、碳氮化硼和合金氮化物等吸波材料的研究现状,并从形貌调控、仿生结构设计、高温吸波特性和吸波机理等方面展望了氮化物吸波材料未来的研究趋势.     

陶瓷电介质储能材料研究进展EI北大核心CSCD

为了更好地推动高储能密度和高效率无铅陶瓷介质电容器的研究与发展,本文综合介绍了陶瓷电介质储能材料的储能原理及分类,比较分析了近年来线性电介质、铁电体、弛豫铁电体和反铁电体储能材料的研究进展,主要研究体系和性能优劣。总结了陶瓷储能材料目前面临的挑战以及改善其储能性能的策略,展望了其未来在5G通信、新能源汽车、消费电子等工业应用中的发展及小型化、高耐电压性、高可靠性的技术发展趋势。     

有机薄膜晶体管（OTFT）的研究进展

近几年来，有机薄膜晶体管（OTFT）有了飞跃的发展，可望在某些方面与无机晶体管电子元件进行竞争。本文综述了有机薄膜晶体管的优势、材料类型、器件制作方法的最新进展，以及目前需要解决的问题。     

多周期分层溅射硫化物靶制备铜锌锡硫薄膜太阳电池EI北大核心CSCD

按照ZnS/CuS/SnS/CuS的顺序分层溅射硫化锌、硫化铜和硫化亚锡三个二元硫化物靶,制备铜锌锡硫(CZTS)的预制层。在预制层总厚度不变的情况下按照上述顺序将预制层分多个周期溅射,然后在360℃对含硫预制层进行低温退火,再在硫气氛中进行高温(600℃)硫化处理,制备出CZTS薄膜。周期数为3的CZTS薄膜表面平整致密、晶粒大小均匀,禁带宽度为1.50eV。用这种薄膜制备的CZTS薄膜太阳电池性能最好,其开路电压(Voc)为623mV,短路电流密度(Jsc)为11.79mA/cm^2,光电转换效率达到2.93%。     

快速热处理方法对铟镓锌氧化物薄膜晶体管特性的改善北大核心CSCD

为了达到在短时间内提高铟镓锌氧化物薄膜晶体管(a-IGZO TFT)性能的目,本文提出了一种快速热处理(RTP)的后处理方法,并对其升温时间进行研究。实验结果表明RTP工艺能够在短时间内实现a-IGZO薄膜内部的缺陷复合与断键重连,提升a-IGZO薄膜质量,从而提高a-IGZO TFT的器件性能。基于RTP工艺的a-IGZO TFT获得了良好的电学特性,其阈值电压与亚阈值摆幅低至0.2 V与0.31 V·decade-1,与未退火的a-IGZO TFT相比分别降低了67%与77%;其载流子迁移率与开关电流比高达8.7 cm2/Vs与7.8×106,与未退火样品相比分别提升了171%与1.1×103倍。与此同时,RTP的处理时间仅需不到5 min,大幅度缩短了a-IGZO TFT所需的后处理时间。     

Effect of hafnium addition on the electrical properties of indium zinc oxide thin film transistors

This study reports the performance and stability of hafnium-indium zinc oxide (HfInZnO) thin film transistors (TFTs) with thermally grown SiO2. The HfInZnO channel layer was deposited at room temperature by a co-sputtering system. We examined the effects of hafnium addition on the X-ray photoelectron spectroscopy properties and on the electrical characteristics of the TFTs varying the concentration of the added hafnium. We found that the transistor on-off currents were greatly influenced by the composition of hafnium addition, which suppressed the formation of oxygen vacancies. The field-effect mobility of optimized HfInZnO TFT was 1.34 cm² V⁻¹ s⁻¹, along with an on-off current ratio of 10⁸ and a threshold voltage of 4.54 V. We also investigated the effects of bias stress on HfInZnO TFTs with passivated and non-passivated layers. The threshold voltage change in the passivated device after positive gate bias stress was lower than that in the non-passivated device. This result indicates that HfInZnO TFTs are sensitive to the ambient conditions of the back surface.     

Investigation on indium concentration dependence of solution processed indium tin oxide thin film transistors

The effect of the indium content in indium tin oxide (ITO) films fabricated using a solution-based process and ITO channel thin film transistors (TFTs) was examined as a function of the indium mole ratio. The carrier concentration and resistivity of the ITO films could be controlled by the appropriate treatments. The TFTs showed an increase in the off-current due to the enhanced conductivity of the ITO channel layer with increasing indium mole ratios, producing an increase in the field effect mobility. The characteristics of the a-ITO channel TFT showed the best performance (μ_FE of 3.0 cm² V^− 1 s^− 1, V_th of 2.0 V, and S value of 0.4 V/decade) at In:Sn = 5:1.     

The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

This paper presents the post-annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor's (TFT) electrical characteristics, and its contact resistance (R_C) with thermally grown SiO₂ gate dielectric on silicon wafer substrates. The electrical characteristics of two types of TFTs, one post-annealed and the other not, are compared, and a simple model of the source and drain contacts is applied to estimate the R_C by a transmission line method (TLM). Consequently, it has been found that the post-annealing does improve the TFT performances; in other words, the saturation mobility (μ_sat), the on/off current ratio (I_ON/OFF), and the drain current (I_D) all increase, and the R_C and the threshold voltage (V_T) both decrease. As-fabricated TFTs have the following electrical characteristics; a saturation mobility (μ_sat) as large as 0.027 cm²/V s, I_ON/OFF of 10³, sub-threshold swing (SS) of 0.49 V/decade, V_T of 32.51 V, and R_C of 969 MΩ, and the annealed TFTs have improved electrical characteristics as follows; a μ_sat of 3.51 cm²/V s, I_ON/OFF of 10⁵, SS of 0.57 V/decade, V_T of 27.2 V, and R_C of 847 kΩ.     

Zinc cadmium oxide thin film transistors fabricated at room temperature

Zinc cadmium oxide (ZnCdO) transparent thin film transistors (TFTs) have been fabricated with a back-gate structure using highly p-type Si (001) substrate. For the active channel, 30 nm, 50 nm, and 100 nm thick ZnCdO thin films were grown by pulsed laser deposition. The ZnCdO thin films were wurtzite hexagonal structure with preferred growth along the (002) direction. All the samples were found to be highly transparent with an average transmission of about 80%~ in the visible range. We have investigated the change of the performance of ZnCdO TFTs as the thickness of the active layer is increased. The carrier concentration of ZnCdO thin films has been confirmed to be increased from 10¹⁶ to 10¹⁹ cm⁻³ as the film thickness increased from 30 to 100 nm. Base on this result, the ZnCdO TFTs show a thickness-dependent performance which is ascribed to the carrier concentration in the active layer. The ZnCdO TFT with 30 nm active layer showed good off-current characteristic of below ~ 10¹¹, threshold voltage of 4.69 V, a subthreshold swing of 4.2 V/decade, mobility of 0.17 cm²/V s, and on-to-off current ratios of 3.37 × 10⁴.     

The effects of post-annealing on the performance of ZnO thin film transistors

In this study, we investigated the effects of a post-annealing process on the performance and stability of zinc oxide thin film transistors fabricated by atomic layer deposition. After the post-annealing process in ambient air at 250 °C for 2 h, the value of the saturation mobility increased from 1.2 to 1.8 cm/Vs, the subthreshold swing decreased from 0.53 to 0.34 V/decade, and the I_on/I_off ratio increased from 3.1 × 10⁶ to 1.7 × 10⁷. The positive bias stability was also enhanced after post-annealing. These results are related to the formation of another phase in which the difference of enthalpy between the semiconductor material and contact metal electrode causes the carrier concentration at the metal/semiconductor interface to increase, leading to decreased contact resistivity. Additionally, internal modification of the semiconductor/dielectric interface and/or improving the semiconductor structure, which is related to a change in the oxidation state of Zn through the incorporation of oxygen and/or hydroxide, can result in improved device performance.     

P型透明导电氧化物LaCuOS的研究进展

透明导电氧化物半导体的出现开拓了光电子器件研究的新领域，但是缺少性能良好的P型材料就限制了透明导电氧化物的利用空间。LaCuOS由于其结构、电学和光学等方面具有许多的优点，成为近年来P型半导体的研究热点。介绍了P型LaCuOS薄膜的基本性质，综述了不同的制备工艺并对其光电学与应用方面进行了研究总结。     

High performance low temperature solution-processed zinc oxide thin film transistor

Amorphous zinc oxide thin films have been processed out of an aqueous solution applying a one step synthesis procedure. For this, zinc oxide containing crystalline water (ZnO⋅ × H₂O) is dissolved in aqueous ammonia (NH₃), making use of the higher solubility of ZnO⋅ × H₂O compared with the commonly used zinc oxide. Characteristically, as-produced layers have a thickness of below 10 nm. The films have been probed in standard thin film transistor devices, using silicon dioxide as dielectric layer. Keeping the maximum process temperature at 125 °C, a device mobility of 0.25 cm²V^− 1s^− 1 at an on/off ratio of 10⁶ was demonstrated. At an annealing temperature of 300 °C, the performance could be optimized up to a mobility of 0.8 cm²V^− 1s^− 1.     

Comparative analysis of temperature thermally induced instability between Si-In-Zn-O and Ga-In-Zn-O thin film transistors

Thermally induced instability of amorphous Si-In-Zn-O (SIZO) with 1 wt.% silicon (Si) concentration and Ga-In-Zn-O (GIZO) with gallium (Ga) of 30 wt.% thin film transistors (TFTs) has been investigated, by comparing the density of states extracted from multi-frequency method. It was observed that the density of state of SIZO-TFT was lower than that of GIZO-TFT, in spite of low processing temperature of SIZO-TFT and thermally induced instability of SIZO- and GIZO-TFT was strongly related with the total trap density. We report that Si of only 1 wt.% in SIZO can improve thermal stability of threshold voltage of In-Zn-O based TFTs more effectively than Ga of 30 wt.% in GIZO.     

Application of pulsed laser deposited zinc oxide films to thin film transistor device

Transparent zinc oxide (ZnO) thin films were deposited on various substrates using a pulsed laser deposition (PLD) technique. During the PLD, oxygen pressure and substrate temperature were varied in order to find an optimal preparation condition of ZnO for thin film transistor (TFT) application. Dependence of optical, electrical and crystalline properties on the deposition conditions was investigated. The ZnO thin films were then deposited on SiN/c-Si layer structures in order to fabricate a TFT device. The pulsed laser deposited ZnO films showed a remarkable TFT performance: field effect mobility (μ_FE) of 2.4-12.85 cm²/V s and ratio of on and off current (R_on/off) in 2-6 order range. Influence of ZnO preparation conditions on the resulting TFT performance was discussed.     

Application of fluorine doped oxide (SiOF) spacers for improving reliability in low temperature polycrystalline thin film transistors

The novel process of self-aligned fluorine doped oxide (SiOF) spacers on low temperature poly-Si (LTPS) lightly doped drain (LDD) thin film transistors (TFTs) is proposed. A fluorine doped oxide spacers were provided to generate the lower dissociation Si-F bonds adjusted to the interface of the drain which is the largest lateral electric field region for lightly doped drain structure. The stronger Si-F bonds can reduce the bonds broken by impact ionization. It is found that the output characteristics of SiOF spacers TFTs show the superior immunity to kink effect. The degradations in Vth shifting, subthreshold slope, drain current and transconductance of SiOF spacers after DC stress are improved.