钙钛矿型金属氧化物的制备及其在燃料电池中的应用研究进展

钙钛矿型金属氧化物具有电化学稳定性强,导电性、抗腐蚀性以及催化活性好等优点,是一种理想的燃料电池阴极氧还原催化材料。钙钛矿型金属氧化物由于其金属元素丰富的可调变性使得其性能得到改善。综述了钙钛矿型金属氧化物的制备方法及其在燃料电池中的应用,指出通过改进制备方法以及选择更好的金属配比,未来钙钛矿型金属氧化物有望替代贵金属催化剂作为新型燃料电池阴极氧还原催化剂。     

P型透明导电SnO2薄膜的研究进展

SnO2薄膜是一种应用广泛的宽禁带半导体材料.近几年来,随着对SnO2的光电性质及其在光电器件方面应用的开发研究,SnO2薄膜成为研究热点之一.制备掺杂的p型SnO2是形成同质p-n结以及实现其实际应用的重要途径.近年来,国内外在p型SnO2薄膜研究方面取得了较大的进展.目前报道的p型SnO2薄膜的最高电导率为5.952Ω-1cm-1.并且得到了具有较好非线性伏安特性的铟锡氧化物的透明p-n结.本文就其最新进展进行了综述.     

p型透明导电氧化物CuAlO2薄膜的研究进展

透明导电氧化物(TCO)的出现开拓了光电子器件研究的新领域.但p型TCO的相对匮乏严重制约了透明氧化物半导体(TOS)相关器件的开发与应用.CuAlO2作为一种天然的p型TCO成为近年来p型TCO的研究热点.介绍了p型TCO的研究现状,综述了不同制备方法制备p型CuAlO2薄膜的研究进展,以及在器件方面的应用,并对其前景进行了展望.     

锂离子电池Sn/C复合负极材料的研究进展

具有高理论比容量和低操作电压的锡及其氧化物负极材料,在当前对锂离子电池高能量密度和高功率密度的日益迫切的需求下备受关注。但其在充放电过程中的巨大体积效应导致其循环性能较差,严重阻碍了锡基负极材料的实用化。在改善循环性能的诸多方法中,结合纳米化和微观结构设计来制备纳米结构Sn/C复合负极材料是一种较好的改性思路。按照锡与碳的复合形式,可将其分为表面附着型、核壳包覆型、弥散包覆型等基本构型和其他复杂结构。本文按此分类方法,从制备工艺、微观结构、电化学性能等方面对各种Sn/C复合负极材料的研究进展进行了评述,并提出将各种基本构型相结合来制备具有多级复合纳米结构的Sn/C复合材料,同时简化制备工艺,对于其性能的进一步提升和实用化将具有重要的意义。     

柔性有机发光二极管材料与器件研究进展

有机发光二极管(Organic Light Emitting Diodes,简称OLED)是全固态的薄膜发光器件。由于OLED的可柔性制备、低驱动电压、低功耗等优点,其在未来的可穿戴应用上具有广阔的发展前景。目前,小尺寸的OLED显示器已经实现商业化,大尺寸的OLED电视和照明也已有产品问世,但OLED器件的可穿戴应用尚处于探索期。综述了近年来基于可穿戴应用的柔性OLED材料及器件技术的研究进展,具体介绍了柔性基板材料、柔性薄膜晶体管材料、柔性OLED发光层技术、柔性薄膜封装材料与技术等方面的研究进展。此外,介绍了近几年来兴起的一些新型的柔性器件制备技术,如柔性纤维布基底技术、纤维状聚合物发光电化学池技术、对称平面层器件结构和狭缝涂布式印刷技术等。最后,对柔性OLED材料与器件技术的发展趋势进行了展望。     

导电材料在透明电极中的应用研究

透明电极作为现代电子器件的重要组成部分,集光学、电学性能于一体,可应用在平板触摸屏、液晶显示器、有机发光二极管、有机太阳能电池等光电器件中。本文对比了不同种类的导电材料在透明电极中的的应用,包括金属氧化物、新型碳材料、纳米金属材料、复合材料等,认为复合材料与印刷制造相结合的方法是透明电极的发展趋势。     

InN材料及器件的最新研究进展

InN材料是性能优良的Ⅲ-Ⅴ族氮化物半导体材料,在光电子领域有着非常重要的应用价值,由此成为最近国际国内研究的热点.就InN材料的制备方法、p型掺杂、电学特性、光学特性、器件的研究应用以及国内研究的最新进展进行了综述.     

印刷薄膜晶体管及其在显示中的应用

薄膜晶体管(TFT)作为显示器的寻址和像素灰阶控制器件,是有源显示器实现图像视频显示的关键核心元器件.传统的TFT背板是基于真空法制备以及光刻法图形化的,成本较高;相比之下,印刷(溶液加工)法因为工艺简单、材料利用率高等优点受到广泛关注.文中系统地总结和分析了印刷TFT相关技术与应用的研究进展以及面临的技术挑战.首先归...     

ZnO薄膜的制备及p型掺杂研究进展

氧化锌是一种在声表面波传感器、压电器件以及太阳能电池等方面具有很好应用前景的材料。介绍了目前制备ZnO薄膜的主要方法,综述了ZnO薄膜p型掺杂的研究现状,并对ZnO薄膜的研究进行了展望。     

氧化锌薄膜场效应晶体管的制备及工艺研究

场效应晶体管是现代微电子技术的重要组成部分.为制备氧化锌薄膜晶体管,分析了氧化锌的p型、n型掺杂特性,对p型掺杂进行了实验分析和理论探讨,比较了各种制备氧化锌薄膜晶体管的工艺特点,展示了ZnO在未来电子和光电子领域的潜在应用.     

Structural and optical properties of Cu doped ZnO thin films by co-sputtering

This paper reports on the structural and optical properties of ZnCuO thin films that were prepared by co-sputtering for the application of p-type-channel transparent thin-film transistors (TFTs). Pure ceramic ZnO and metal Cu targets were prepared for the co-sputtering of the ZnCuO thin films. The effects of the Cu concentration on the structural, optical, and electrical properties of the ZnCuO films were investigated after their heat treatment. It was observed from the XRD measurements that the ZnCuO films with a Cu concentration of 7% had ZnO(002), Cu2O(111), and Cu2O(200) planes. The 7% Cu-doped ZnO films also showed a band-gap energy of approximately 2.05 eV, an average transmittance of approximately 62%, and a p-type carrier density of approximately 1.33 x 10(19) cm-3 at room temperature. The bottom-gated TFTs that were fabricated with the ZnCuO thin film as a p-type channel exhibited an on-off ratio of approximately 6. These results indicate the possibility of applying ZnCuO thin films with variable band-gap energies to ZnO-based optoelectronic devices.     

Low temperature (< 100 °C) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu₂O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu₂O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu₂O films are reported. It is known from previously published work that the formation of pure Cu₂O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu₂O thin films (as opposed to CuO or mixed phase CuO/Cu₂O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu₂O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu₂O films with electrical resistivity ranging from 10² to 10⁴ Ω-cm, hole mobility of 1-10 cm²/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu₂O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu₂O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells.     

高功率脉冲磁控溅射制备ZnO薄膜的研究进展

氧化锌薄膜材料由于具有高电导率、良好的光学透过率、原料储存丰富、成本低廉的特点,被认为是最具有潜力的透明导电薄膜.特别是其宽禁带(3.37eV)和高达60meV的激子束缚能,使其在环境温度制备同质结发光器件、太阳能电池电子传输层具有巨大的应用前景.然而,传统制备方法难以实现薄膜质量的综合调控,存在p-ZnO稳定性差、制...     

Exploring Two‐Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next‐Generation,High‐Performance,Thin‐Film Transistor Technologies

In the last decade, metal oxides have emerged as a fascinating class of electronic material, exhibiting a wide range of unique and technologically relevant characteristics. For example, thin‐film transistors formed from amorphous or polycrystalline metal oxide semiconductors offer the promise of low‐cost, large‐area, and flexible electronics, exhibiting performances comparable to or in excess of incumbent silicon‐based technologies. Atomically flat interfaces between otherwise insulating or semiconducting complex oxides, are also found to be highly conducting, displaying 2‐dimensional (2D) charge transport properties, strong correlations, and even superconductivity. Field‐effect devices employing such carefully engineered interfaces are hoped to one day compete with traditional group IV or III–V semiconductors for use in the next‐generation of high‐performance electronics. In this Concept article we provide an overview of the different metal oxide transistor technologies and potential future research directions. In particular, we look at the recent reports of multilayer oxide thin‐film transistors and the possibility of 2D electron transport in these disordered/polycrystalline systems and discuss the potential of the technology for applications in large‐area electronics.     

p型透明导电氧化物薄膜的研究进展

p型透明导电膜是近来发现的一种新型的材料,在透明有源器件、传感器、透明电极和电路等方面具有广泛的潜在应用.近来在这方面的研究取得了一些突出的进展.本文主要综述了关于p型透明导电膜在材料、沉积工艺以及相关器件方面的研究进展.     

氧化亚铜薄膜的研究进展

氧化亚铜（Cu2O）具有优越的光电性质，是一种具有广泛用途的材料，而且它的制备方法很多。结合最近的研究进展综述了Cu2O薄膜的制备方法与基本性质，分析了Cu2O薄膜研究开发现状，展望了Cu2O薄膜在太阳能电池应用方面的前景。     

Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide

2D semiconductor materials are being considered for next generation electronic device application such as thin‐film transistors and complementary metal–oxide–semiconductor (CMOS) circuit due to their unique structural and superior electronics properties. Various approaches have already been taken to fabricate 2D complementary logics circuits. However, those CMOS devices mostly demonstrated based on exfoliated 2D materials show the performance of a single device. In this work, the design and fabrication of a complementary inverter is experimentally reported, based on a chemical vapor deposition MoS₂ n‐type transistor and a Si nanomembrane p‐type transistor on the same substrate. The advantages offered by such CMOS configuration allow to fabricate large area wafer scale integration of high performance Si technology with transition‐metal dichalcogenide materials. The fabricated hetero‐CMOS inverters which are composed of two isolated transistors exhibit a novel high performance air‐stable voltage transfer characteristic with different supply voltages, with a maximum voltage gain of ≈16, and sub‐nano watt power consumption. Moreover, the logic gates have been integrated on a plastic substrate and displayed reliable electrical properties paving a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics.     

Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films

The direct preparation of p-type transparent conducting Ga-doped SnO₂ thin films and their fundamental application in transparent p-n homojunction diode were realized. The films were grown in an active oxygen ambient using reactive rf magnetron sputtering without post-deposition annealing involved. This method improved the electrical properties of the films while maintaining their optical transparency. By growing a p-type thin film on commercial n-type SnO₂:F-coated glass, transparent p-n homojunction diode was obtained. It exhibits a distinct current-voltage rectifying characteristic, manifesting this p-type thin film and the fabrication technology are suitable for industrial applications.     

Recent progress in transparent oxide semiconductors: Materials and device application

This paper reviews our recent research progress on new transparent conductive oxide (TCO) materials and electronic and optoelectronic devices based on these materials. First, described are the materials including p-type materials, deep-UV transparent TCO(β-Ga₂O₃), epitaxially grown ITO with atomically flat surface, transparent electrochromic oxide (NbO₂F), amorphous TCOs, and nanoporous semiconductor 12CaO · 7Al₂O₃. Second, presented are TCO-based electronic/optoelectronic devices realized to date, UV/blue LED and UV-sensors based on transparent pn junction and high performance transparent TFT using n-type TCO as an n-channel. Finally, unique optoelectronic properties (p-type degenerate conduction, transfer doping of carriers, RT-stable exciton, and large optical nonlinearity) originating from 2D-electronic nature in p-type layered oxychalcogenides are summarized along with the fabrication method of epitaxial thin films of these materials.     

铝诱导晶化法低温制备多晶硅薄膜

为了满足在普通玻璃衬底上制备多晶硅薄膜晶体管有源矩阵液晶显示器,低温（＜６００℃）制备高质量多晶硅薄膜已成为研究热点．本文研究了一种低温制备多晶硅薄膜的新工艺：金属诱导非晶硅薄膜低温晶化法．在非晶硅薄膜上蒸镀金属铝薄膜,并光刻形成铝膜图形,而后于氮气保护中退火．利用光学显微镜和拉曼光谱等测试方法,研究了Ａｌ诱导下非晶硅薄膜的晶化过程,结果表明;在５６０℃退火６ｈ后;铝膜下的非晶硅已完全晶化,确定了所制备的是多晶硅薄膜．初步探讨了非晶硅薄膜金属诱导横向晶化机理．