热处理温度对磁控溅射AZO薄膜的电学性能影响

利用射频磁控溅射制备了Al掺杂的ZnO(AZO)薄膜,通过X线衍射(XRD)、原子力显微镜(AFM)及四探针等手段对薄膜进行了表征,研究了不同热处理温度对AZO薄膜的形貌、结构和电学性能的影响。研究表明,Al的掺杂体积分数约为1.2%,随着热处理温度的升高,薄膜颗粒大小均匀,AZO薄膜衍射峰强度先增强后减弱,当热处理温度为450℃时,该AZO薄膜的结晶性最好,电阻率最小为0.024 7Ω·cm。     

基于组分调节减小AZO表面等离子体损耗的研究

在蓝宝石衬底上制备了具有不同铝(Al)掺杂浓度的掺铝氧化锌(AZO)薄膜,并对其进行了紫外-可见吸收光谱、霍尔效应、折射率及介电常数测试,研究了Al组分对AZO薄膜的光电、表面等离子体性质的影响。随着Al组分浓度的逐渐增大,AZO薄膜吸收边发生蓝移且吸收强度逐渐减小,光学损耗减小;同时,载流子浓度与迁移率先增大后减小,而电学损耗先减小后增大。     

Sn掺杂量对Sn-Al共掺ZnO薄膜光学性能的影响

利用溶胶-凝胶(sol-gel)法在玻璃和硅衬底上制备了不同Sn掺杂量的Sn-Al共掺的ZnO薄膜。采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、紫外可见分光光度计(UV-Vis)、光致发光谱(PL)等测试手段,对薄膜的结构、形貌和光学性能进行了表征。结果表明:所制备的样品晶粒均沿(002)方向择优生长,且随着Sn元素掺杂量的增加,择优取向性先增强后减弱,同时薄膜的半高宽先减小后增大,半高宽最小时,薄膜的结晶质量最好。与只掺Al元素的ZnO薄膜相比,共掺后的薄膜近紫外发光峰的强度明显降低,出现了轻微的蓝移,且在600 nm处的缺陷发光强度明显增强;随着Sn掺杂量的增加薄膜的透过率先增加后减小。与AZO薄膜相比,当Sn的掺杂量为0.020时,薄膜的结晶质量更好,缺陷发光更强,光透过率更高。     

梯度掺杂与分层退火对AZO薄膜结构与性能的影响

用sol-gel法在玻璃基片上分别制备了不同Al浓度掺杂和Al梯度掺杂的掺铝氧化锌(AZO)薄膜,并研究了分层退火和一次性退火对薄膜结构和性能的影响.结果表明:梯度掺杂与分层退火都能促进薄膜的(002)择优取向.Al掺杂摩尔分数为1.5％的薄膜和经分层退火处理的Al梯度掺杂的薄膜在395 nm处均有很强的紫外发射峰,但...     

Bi掺杂ZnO籽晶层生长纳米ZnO薄膜性能研究

采用溶胶 凝胶法制备得到不同浓度Bi3+掺杂ZnO籽晶层,又进一步采用水热法合成了六方纤锌矿结构的ZnO纳米棒。通过X线衍射（XRD）、场发射扫描电子显微镜（FESEM）、光致发光（PL）谱等测试手段对样品结构、形貌和光学性能进行测试和表征。结果表明,在不同浓度Bi掺杂ZnO籽晶层上生长纳米ZnO薄膜,ZnO的晶体结构没有改变,均为六方纤锌矿结构,且(002)晶面的峰强明显高于其他晶面的峰强值;在FESEM电镜观察下发现,不同掺杂浓度Bi掺杂ZnO籽晶层上水热生长的纳米ZnO薄膜均为纳米棒状。PL光谱显示随着Bi掺杂量增加,样品的近紫外发射峰和晶格缺陷峰等峰值明显增大,且有红移现象产生。其中禁带宽度随着Bi掺杂量的增大而减小,说明Bi3+可以有效地调节ZnO的禁带宽度。     

退火温度对AZO薄膜场发射性能的影响

以纯度为99.95%、Al2O3为2wt.%的ZnO-Al2O3金属氧化物为溅射靶材,采用射频(RF)磁控溅射的方法,在玻璃衬底上制备Al掺杂ZnO(AZO)薄膜,研究其场发射特性和导电性能,并分析了不同的退火温度对AZO薄膜的形貌、导电及场发射性能的影响。采用原子力显微镜(AFM)及X射线衍射(XRD)对AZO薄膜表面形貌与结晶特性进行测试的结果表明,随着退火温度的升高,AZO薄膜的表面粗糙度随之增大,AZO薄膜的结晶度变好;场发射性能研究的结果表明,AZO薄膜的开启电场随着退火温度增加呈先减小后增大的趋势,当退火温度为300℃时,AZO薄膜样品粗糙度最大,场发射性能最好,开启场强为2.8V/μm,发光均匀性较好,亮度达到650cd/m2,导电性能最好,电阻率为5.42×10-4Ω·cm。     

铝掺杂ZnO纳米粉体制备及其光学特性

采用溶胶-凝胶法,以六水硝酸锌、乙醇胺和九水硝酸铝为主要材料,制备得到Al掺杂Zn O(AZO)粉体。利用XRD、TEM、XPS、PL等检测手段对样品的物相、形貌及发光特性进行表征。结果表明:以溶胶-凝胶法合成的Al掺杂Zn O粉体为六角纤锌矿型结构,Al以Al~(3+)形式掺杂进入Zn O晶格,当450℃热处理0.5 h、Al掺杂摩尔分数为3%时,样品结晶程度最高;形貌为类球形,颗粒平均粒径大小约80 nm;在光致发光(PL)光谱上于468.6 nm处的缺陷峰强度明显降低,说明Al掺杂可改善Zn O粉体性能,使电子空穴复合概率大大降低。     

衬底温度对共溅射制备AZO薄膜光电性能影响

以Al金属和ZnO陶瓷作为溅射靶材,采用直流和射频双靶磁控共溅射的方法在玻璃衬底上制备Al掺杂ZnO（AZO）透明导电薄膜,采用X线光电子能谱仪、X线衍射（XRD）仪、扫描电子显微镜、原子力显微镜、紫外 可见分光光度计和霍耳效应测试仪对薄膜的微观形貌结构及光电性能进行了表征和分析,探究了不同衬底温度对薄膜光电性能的影响。结果表明,所制备的AZO薄膜均具有c轴取向生长的六角纤锌矿结构,在衬底温度为300 ℃时AZO薄膜结晶质量最好,电阻率最低（为1.43×10-3 Ω·cm）。所有样品薄膜在380~780 nm区间平均透过率大于90％,随着衬底温度的升高,AZO薄膜的吸收边出现了蓝移。     

磁控溅射技术制备织构化表面Al掺杂ZnO薄膜

以Zn-Al(Al:2wt.%)合金为溅射靶材,采用直流反应磁控溅射的方法,在普通玻璃衬底上制备Al掺杂ZnO(AZO)薄膜。通过对衬底温度的调制,在较高衬底温度下(～280℃),无需经过常规溅射后腐蚀工艺过程,即可获得表面形貌具有特征陷光结构的AZO薄膜,其表面呈现"类金字塔"状,粗糙度RMS=65.831nm。通过测试薄膜的结构特性、表面形貌及其光电性能,详细地研究了衬底温度对AZO薄膜性能的影响。X射线衍射(XRD)和扫描电子显微镜(SEM)测试表明,所有样品均为多晶六角纤锌矿结构,薄膜呈(002)晶面择优生长,其表面形貌随衬底温度的不同而改变。衬底温度为200℃及其以上工艺条件下获得的AZO薄膜,在可见光及近红外范围的平均透过率大于90%,电阻率优于1.5×10-3Ωcm。     

溶胶-凝胶法合成纳米ZnO∶Al的表征及光学性能

以六水硝酸锌和九水硝酸铝分别作锌源和掺杂剂,使用溶胶-凝胶(Sol-Gel)法合成纳米ZnO∶Al。采用X线衍射(XRD)分析、透射电子显微(TEM)分析、X线光电子能谱(XPS)分析、光致发光光谱(PL)分析等方法对纳米ZnO∶Al进行表征。实验结果表明,Sol-Gel法合成纳米ZnO∶Al颗粒为六方纤锌矿型结构,当前驱体摩尔浓度为0.25 mol/L、热处理450℃和掺杂Al摩尔分数为3%时,样品的结晶性良好;XPS也证实Al~(3+)掺杂进入到ZnO晶体中,样品呈类球形,颗粒大小随前驱体浓度的增大而减小;对应的室温PL光谱上近紫外发射峰和弱蓝光缺陷峰强度都随浓度的增大而减小。     

Structural and optical properties of (Al,K)-co-doped ZnO thin films deposited by a sol–gel technique

Thin films of Al-doped ZnO (AZO) and (Al, K)-co-doped ZnO (AKZO) were synthesized by sol–gel spin coating and their structural and optical properties were investigated. All the films had a preferential orientation in which the c-axis was perpendicular to the substrate. The optical bandgap increased after Al doping, but decreased after K doping at a given Al doping concentration. UV emission and a broad visible emission band were observed in photoluminescence (PL) spectra. The intensity of both emission bands decreased after Al and K co-doping. PL excitation (PLE) spectra of the blue emission band indicate that the initial state is possibly the same for all the samples and a similar case occurs for the orange–red emission band. The green emission can be attributed to electronic transitions involving oxygen vacancies. A possible process for the orange–red emission of the thin films is radiative recombination of an electron trapped in a zinc interstitial defect with a hole deeply trapped in interstitial oxygen.     

Al_2O_3过渡层厚度对AZO薄膜性能的影响研究

采用磁控溅射法,在预先沉积了Al2O3过渡层的玻璃衬底上制备了性能优良的AZO薄膜。借助XRD、AFM、四探针仪和分光光度计对AZO薄膜的结构、表面形貌以及电学和光学性质进行了表征,并研究了Al2O3过渡层厚度对AZO薄膜性能的影响。结果表明:Al2O3过渡层的添加对AZO薄膜的表面形貌有一定影响;AZO薄膜的结晶质量随着过渡层厚度的增加先上升后下降;AZO薄膜的电阻率因过渡层的添加而明显降低,特别是在AZO薄膜较薄时;在添加了1～3 nm厚的过渡层后,160 nm厚的AZO薄膜的电阻率下降了44%左右;AZO薄膜的可见光透射率和光学带隙基本不受过渡层影响。     

Effects of the Cr doping on structure and optical properties of ZnO thin films

Cr-doped ZnO thin films are prepared on glass substrates by the magnetron sputtering technique. An X-ray diffraction (XRD) is used to analyze the structural properties of the thin films. It indicates that all the thin films have a preferential c-axis orientation. The peak position of the (002) plane shifts to the higher 2θ value, and the peak intensity decreases with the increase of Cr doping. The results of the scanning electron microscopy (SEM) show that the surface morphology becomes loose with the incre...     

AZO透明导电薄膜的结构与光电性能

采用射频溅射工艺制备了Zn1-xAlxO透明导电薄膜。通过XRD、UV透射和电学性能测试等分析手段,研究了Al浓度对薄膜的组织结构和光电性能的影响规律。结果表明:薄膜具有c轴择优取向,随着Al浓度的增加,(002)衍射峰向高角度移动,峰强度逐渐减弱,x(Al)为15%掺杂极限浓度。x(Al)为2%时,薄膜电阻率是3.4×10–4Ω.cm。随着掺杂量x(Al)从0增加到20%,薄膜的禁带宽度从3.34 eV增加到4.0 eV。     

The Influence of Film Thickness on the Transparency and Conductivity of Al-Doped ZnO Thin Films Fabricated by Ion-Beam Sputtering

To evaluate the influence of film thickness on the structural, electrical, and optical properties of Al-doped ZnO (AZO) films, a set of polycrystalline AZO samples with different thickness were deposited on glass substrates by ion-beam sputtering deposition (IBSD). X-ray diffraction (XRD), atomic force microscopy (AFM), energy-dispersive x-ray spectroscopy (EDS), four-point probe measurements, and spectrophotometry were used to characterize the films. XRD showed that all the AZO films had preferred c-axis orientation. The ZnO (110) peak appeared, and the intensity increased, with increasing thickness. All the samples exhibited compressive intrinsic stresses. AFM showed that the grain size along with the root-mean-square (RMS) roughness increased with increasing thickness. The decrease of resistivity is due to the corresponding change in grain size, surface morphology, and chemical composition. The average optical transmittance of the AZO films was over 80%, and a sharp fundamental absorption edge with red-shifting was observed in the visible region. The optical band gap decreased from 3.95 eV to 3.80 eV when the AZO film thickness increased from 100 nm to 500 nm.     

Accelerated degradation of Al3+ doped ZnO thin films using damp heat test

Two different types of aluminum-doped zinc oxide (AZO) thin films were fabricated using low cost sol–gel technique. By applying damp heat testing, the optical and electrical properties of those films were investigated under the influence of accelerated degradation from moisture or moisture vapor. Complementary measurements of optical transmittance, work function, and conductivity allowed exploring the degradation of AZO thin films and the corresponding OPV devices. We found that optical properties like transmittance, absorption coefficient, and band gap are not influenced by temperature and moisture. However, an increase in the work function, and a decrease in the conductivity of AZO films were observed upon damp heat exposure indicating the formation of a barrier or depletion layer at the metal oxide semiconductor interface.     

sol-gel法制备ATO薄膜的结构与光学性能研究

采用sol-gel法在玻璃衬底上制备ATO(SnO2∶Sb)薄膜,并用XRD、SEM、紫外-可见光谱和光致发光对薄膜进行了表征,研究了ATO薄膜的结构和光学性能。结果表明:ATO薄膜微晶晶相与SnO2一致,仍然是四方金红石结构;ATO薄膜在可见光区的透过率超过80%,当r(Sb∶Sn)为0.15时,ATO薄膜的透过率最高达87%;ATO薄膜在344～380nm处有一个很强的紫外-紫光发射带,随着Sb掺杂量的增加,发射峰逐渐变强,在r(Sb∶Sn)为0.25时,发射峰相对强度达302.4。