GaSb基垂直腔面发射激光器P面反射镜优化设计

针对当前2. 0μm GaSb基垂直腔面发射激光器发展中由于传统的P面分布布拉格反射镜(P-DBRs)带来的高电阻和严重光吸收这一瓶颈问题,采用严格耦合波方法仿真设计了含高对比度亚波长光栅(HCG)的P面反射镜.实验结果表明,这种制备工艺简单的反射镜在2. 0μm中心波长附近,TM波入射时反射率超过99. 5%的高反射带宽为278 nm,反射率99. 9%以上的高反射带宽达到148 nm,完全能够满足VCSEL对谐振腔镜的要求,且能有效避免因异质外延等造成反射镜衍射特性劣化等问题.     

940nm VCSEL高折射率对比度亚波长光栅反射镜的设计

研究了一种940 nm GaAs基VCSEL的高折射率对比度亚波长光栅反射镜（HCG）,采用GaAs/AlO_x光栅结构,讨论了TE偏振时光栅结构中各参数对反射光谱的作用规律,分析TE、TM不同偏振时反射镜的结构特点,及形貌误差对高反射带的影响。设计的TE-HCG的高反射带中心为940 nm,在0.888～0.985 μm波长范围内,TE波反射率大于99.5%,TM波反射率低于90%,高反射带宽97 nm,Δλ/λ₀>10%。该反射镜可以与VCSEL采用一次性外延生长技术制作,且具有结构简单,制作容差大,且偏振稳定的优势,不仅有利于改善器件性能,且大大降低VCSEL的制作难度和成本。     

一种具有亚波长光栅结构的光探测器的设计

高速智能光纤通信系统和网络的飞速发展对光电探测器提出了更高要求.利用严格耦合波(RCWA)理论,给出了在亚波长光栅(SWG)下方具有分布布拉格反射镜(DBR)结构的理论分析模型,将这种结构作为反射镜应用于谐振腔增强型光探测器(RCE PD)的设计中.仿真表明由于SWG的引入,只需要4对λ/4厚度的InGaAsP/InP系DBR,可使整体膜系结构实现在中心波长1.55 μm处反射率达到99.7%,在1.40 μm至1.62/μm范围内反射率高于99%.引入SWG后的RCE PD在1.55 μm附近的量子效率接近90%,串扰衰减系数与量子效率的乘积超过15 dB.有效地解决了InGaAsP/InP介质膜系DBR作为谐振腔反射镜反射率低、反射带宽窄的问题.     

与GaAs基VCSEL同材料体系高对比度亚波长光栅的设计

设计了一种用于850 nm GaAs基VCSEL的高折射率对比度亚波长光栅(HCG),整体结构采用GaAs材料体系,包含光栅层及为缓解其应力问题而设计的应力缓冲层和以AlGaAs或AlAs氧化后形成的AlOx低折射率亚层。通过Rsoft软件对HCG的反射特性进行仿真研究,分析了不同光栅参数对反射谱的作用规律,重点探究了应力缓冲层和低折射率亚层对光栅特性的影响。设计了中心波长850 nm的TM模HCG,反射率大于99. 9%的带宽可达91 nm,与中心波长之比达到10. 7%,同时TE模的反射率不超过90%,显示出了良好的偏振选择性。该结构可以替代VCSEL中的P型分布式布拉格反射镜,提供高反射率、宽带宽,并改善由不同材料体系所导致的应力问题,提高器件稳定性。     

新型光电探测器的研究

针对RCE光电探测器存在的问题提出两种解决方案。将InP／空气隙的分布布拉格反射镜(DBR)结构引入RCE光探测器,只用1．5对InP／空气隙计算反射率约为95％,解决了长波长反射镜制备问题。所制备的器件,在波长1．585μm处获得了约54．5％的峰值量子效率,以及8GHz的3dB响应带宽。另一种引入斜镜结构解除了量子效率与超窄光谱响应线宽的相互制约。     

新型长波长InP基谐振腔增强型光探测器

介绍了一种新型长波长InP基谐振腔增强型(RCE)光探测器。通过V(FeCl3):V(H2O)溶液对InGaAs牺牲层的选择性湿法腐蚀,制备出具有InP/空气隙的高反射率分布布拉格反射镜(DBR),并将该选择性湿法腐蚀技术成功地应用到长波长InP基谐振腔增强型光探测器的制备中去,从而彻底解决了InP/InGaAsP高反射率分布布拉格反射镜难以外延生长的问题。所制备出的谐振腔增强型光探测器,其台面面积为50μm×50μm,底部反射镜为1.5对的InP/空气隙分布布拉格反射镜,顶部反射镜靠InGaAsP与空气的界面反射来实现。测试结果表明,该谐振腔增强型光探测器在波长1.510μm处获得了约59％的峰值量子效率,在3V反偏压下暗电流为2nA,3dB响应带宽达到8GHz。     

LED芯片DBR反射镜优化设计

讨论了反射镜反射率对LED光提取效率的影响,并基于芯片与封装协同设计的原理,针对蓝光和黄光波段,通过TFcalc膜系仿真软件设计和优化了分布式布拉格反射镜(DBR)膜系。仿真结果表明,单堆栈DBR结构最大反射带宽为134nm,而双堆栈DBR结构最大反射带宽可拓展至216nm。利用参考波长红移的方式,可以缓解DBR反射特性随入射角度增加而出现的反射谱线蓝移现象。金属增强型DBR结构能够减小反射偏振效应,提高反射带宽和平均反射率,并能够减小DBR厚度,从而显著改善芯片的散热性能。     

1.55μm室温电抽运全晶格匹配Sb基垂直腔面发射激光器

圣巴巴拉加州大学小组发展了第一个室温运转、输出波长 1.55μm的电抽运、全晶格匹配、砷锑化物单块垂直腔激光器。在 In P基质上用 Ga As SbAl As Sb布拉格反射镜达到高反射率。还测得低到 7m A的阈值电流 ,相应的阈值电流密度为 1.4 k A/cm2 。无电流注入时 ,腔共振精确集中在 1.55μm。高温 ( 4 5°C)电流阈值为 1.55μA时 ,观测到辐射。结果表明垂直腔激光器在 1.55μm辐射可用单块外延结构达到 ,对短波长垂直腔激光器 ,镜堆积的合理层数与短波长 Ga As系统类似1.55μm室温电抽运全晶格匹配Sb基垂直腔面发射激光器…     

1315nm高反射率硅镜的膜系分析

随着高功率激光器,尤其是化学氧碘激光器(COIL)的不断发展,对激光光学元件的性能要求越来越高.为了满足实际需要,用于COIL的高反射硅镜的反射率应达到99.95%以上,以减少镜面热畸变,提高其抗激光损伤能力.早在十多年前,美国的有关专家就把激光薄膜作为急待解决的关键技术.近年来,国外的强激光薄膜发展很快,1315 nm波长高反射镜的反射率已达99.9%以上,有的甚至达到99.99%. TiO2/SiO2膜系是目前制备高反射镜采用最多的膜系.该膜系比较成熟,制备工艺较为稳定.但该膜系的本征吸收较大,影响到激光损伤阈值的提高.而且材料组合相对较不稳定,峰值波长易受湿度的影响.若采用Si和SiO2做镀膜材料,用于1.0～3.0 μm波长范围,薄膜吸收极小,而且耐久稳定.由于Si在红外区的折射率较高,因此仅需要较少的膜层数、较薄的膜层厚度即可满足设计使用需要,大大提高了镀膜效率.本文利用TFCALC薄膜设计软件对TiO2/SiO2 和Si/SiO2 膜系中心波长为1.315 μm的硅镜反射特性进行了仿真模拟.给出了Si薄膜折射率与基板温度的关系曲线,以及正入射与45°斜入射情况下Si/SiO2 膜系硅镜的反射特性;膜厚控制误差为±10%时,对反射率的影响等.(OH11)     

用于VCSEL的Si基零对比度光栅反射镜研究

利用严格耦合波理论和时域有限差分方法设计了一种应用于940 nm垂直腔面发射激光器的Si基零折射率对比度光栅反射镜。对零对比度亚波长光栅(Zero-index-Contrast subwavelength Grating, ZCG)的高反射特性进行了研究,分析了ZCG实现宽带高反射的条件。此外,讨论了光栅结构参数对反射性能的影响并计算了制作公差,模拟分析了ZCG尺寸与垂直腔面发射激光器(Vertical-Cavity Surface-Emitting Laser, VCSEL)氧化孔径尺寸对镜面损耗的影响。所设计的ZCG带宽可达280 nm, Δλ/λ₀=29.8%。该反射镜可以替代VCSEL中传统的分布式布拉格反射镜,降低了工艺难度和生长成本,同时有利于VCSEL与其他Si基光电子器件的集成。     

聚对苯撑苯并双(口恶)唑发光及其器件制备

采用光谱技术,研究了聚对苯撑苯并双(口恶)唑(PBO)溶液的光敏发光特性,并用相对法估算出溶液发光效率在50%范围.结合光谱技术、半导体电学和电化学等研究手段,具体研究了以PBO为发光层的单层电致发光器件,研究结果显示,电致发光与薄膜的光致发光有具有相同的发光中心,峰值位于510 nm左右.同时发现,由于存制备过程中不同处理条件使得不同厚度薄膜残留的掺杂物质浓度不同,从而引起薄膜的导电性的不同.使得器件的阈值场强随PBO厚度的减小而逐渐增加.     

系统级封装新型埋入式电源滤波结构的研究

在高密度小尺寸的系统级封装(SiP)中,对供电系统的完整性要求越来越高,多芯片共用一个电源网路所产生的电压抖动除了会影响到芯片的正常工作,还会通过供电网路干扰到临近电路和其他敏感电路,导致芯片误动作,以及信号完整性和其他电磁干扰问题.这种电压抖动所占频带相当宽,几百MHz到几个GHz的中频电源噪声普通方法很难去除.结合埋入式电容和电源分割方法的特点,提出一种新型高性能埋入式电源低通滤波结构直接替代电源/地平面.研究表明,在0.65～4GHz的频带内隔离深度可达-40～75 dB,电源阻抗均在0.25ohm以下,实现了宽频高隔离度的高性能滤波作用.分别用电磁场和广义传输线两种仿真器模拟,高频等效电路模型分析这种低通滤波器的工作原理以及结构对隔离性能的影响,并进行了实验验证.     

Emerging interconnects: a state-of-the-art review and emerging solutions

Aluminium was a primary material for interconnection in integrated circuits (ICs) since their inception. Later, copper was introduced as interconnect material which has better metallic conductivity and resistance to electromigration. As the aggressive technology scaling continues, the copper resistivity increased because of size effects, which causes increase in delay, power dissipation and electromigration. The need to reduce the resistor-capacitor??????? delay, dynamic power utilisation and the crosstalk commotion is as of now the fundamental main impetus behind the presentation of new materials. The purpose of this paper is to do a survey of interconnect material used in IC from introduction of ICs to till date. This paper studies and reviews new materials available for interconnect application which are optical interconnects, carbon nanotube (CNT), graphene nanoribbons (GNRs) and silicon nanowires which are alternatives to copper. While doing a survey of interconnect material, it is found that multiwalled CNTs, multilayer GNR and mixed CNT bundles are promising candidates and are ultimate choice that can strongly address the problems faced by copper but on integration basis copper would last for coming years.     

Arsenic deposition as a precursor layer on silicon (211) and (311) surfaces

We investigate the properties of arsenic (As) covered Si(211) and Si(311) surfaces by analyzing data from x-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED) images. We then create a model using total surface energy calculations. It was found that both Si(211) and Si(311) had 0.68±0.08 surface As coverage. Si(211) had 0.28±0.04 Te coverage and Si(311) had 0.24±0.04 Te coverage. The Si(211) surface replaces the terrace and trench Si atoms with As for a lower surface energy, while the Si edge atoms form dimers. The Si(311) surface replaces all terrace atoms and adsorbs an As dimer every other edge site. These configurations imply an improvement in the mean migration path from the bare silicon surface by allowing the impinging atoms for the next epitaxial layer, tellurium (Te), to bind at every other pair of edge atoms, and not the step terrace sites. This would ensure a nonpolar, B-face growth.     

光子晶体微腔发光二极管

光子晶体微腔因其具有增强自发辐射、定向输出和单模工作的能力而受到广泛关注。介绍了光子晶体微腔发光二极管的基本原理、设计、特性、制作及其典型器件。     

Comparative study of maximum power point tracking techniques for hybrid renewable energy system

The power generation demand is increasing day-by-day throughout the world, therefore, the use of hybrid systems becomes a significant solution. The hybrid renewable energy system (HRES) is used for delivering power in various regions in order to overcome intermittence of wind and solar resources. Because of increasing environmental problems, for example, greenhouse gas emission and energy cost have interested novel research into substitute methods in favour of electrical power generation. Maximum Power Point Tracking (MPPT) control method is a vast deal of novel research used for enhancing the efficiency of HRES. The authors have revealed that the hybrid techniques i.e. Global MPPT, fuzzy-neuro systems, Adaptive Neuro-Fuzzy Inference System (ANFIS), Perturbed and Observe (P&O) + Adaptive Neural Network (ANN) etc. can provide best results as compared to other MPPT control methods. This paper offering a state of art review of MPPT control techniques for HRES.     

用于单光子TOF测量的时间-幅度变换器

基于新型共源共栅电流源的积分方法,设计了一种用于单光子飞行时间(TOF)测量的时间-幅度变换器(TAC).该方法有效简化了 TAC电路结构,减小了 TAC占用面积,显著提高了TOF的满量程范围(FSR).采用0.18 μm标准CMOS工艺设计.集成TAC的单光子探测器像素单元的填充因子可达到26.8％.后仿真结果表明,...     

Joint estimation of TOA and DOA in IR-UWB system using a successive propagator method

Impulse radio ultra-wideband (IR-UWB) ranging and positioning require accurate estimation of time-of-arrival (TOA) and direction-of-arrival (DOA). With receiver of two antennas, both of the TOA and DOA parameters can be estimated via two-dimensional (2D) propagator method (PM), in which the 2D spectral peak searching, however, renders much higher computational complexity. This paper proposes a successive PM algorithm for joint TOA and DOA estimation in IR-UWB system to avoid 2D spectral peak searching. The proposed algorithm firstly gets the initial TOA estimates in the two antennas from the propagation matrix, then utilises successively one-dimensional (1D) local searches to achieve the estimation of TOAs in the two antennas, and finally obtains the DOA estimates via the difference in the TOAs between the two antennas. The proposed algorithm, which only requires 1D local searches, can avoid the high computational cost in 2D-PM algorithm. Furthermore, the proposed algorithm can obtain automatically paired parameters and has better joint TOA and DOA estimation performance than conventional PM algorithm, estimation of signal parameters via rotational invariance techniques algorithm and matrix pencil algorithm. Meanwhile, it has very close parameter estimation to that of 2D-PM algorithm. We have also derived the mean square error of TOA and DOA estimation of the proposed algorithm and the Cramer-Rao bound of TOA and DOA estimation in this paper. The simulation results verify the usefulness of the proposed algorithm.     

超宽带脉冲信号的光学生成方法研究

近年来超宽带(UWB)通信技术迅猛发展,在测量、雷达技术、民用和军事无线通信中有着重要的应用,UWB-over-fiber技术已经成为目前研究的热点,其中就包括UWB脉冲信号的产生方法。区别于传统的电子学方法,光子学产生方法不受电子瓶颈制约,可以实现很高的带宽,并且具有抗电磁干扰、重量轻、结构紧凑的优点。通过对比国内外本领域研究成果,讨论及总结了以下三种原理的UWB脉冲信号的光学生成方法:1)相位调制-强度调制转换(PM-IM);2)半导体光放大器(SOA)的非线性效应;3)频谱塑形和色散所致频域-时域映射,然后对各种方案进行了对比分析。     

多孔硅发光机制的分析

从量子力学的基本理论出发讨论了量子限制效应，推导出多孔硅有效禁带宽度增量并用量子限制效应和表面态及其物质在发光中作用的理论解释了ＰＳ光致发光的实验现象。