一种优化的SiGe HBT集约模型及参数提取方法

通过合理简化和改进MEXTRAM模型,提出了一种优化的SiGe HBT集约模型和参数提取方法;精确提取了一组微波SiGe HBT的模型参数。仿真结果与测试数据的相对误差不超过3%。     

一种提高的SiGe HBT实用模型

提出了一种新的基于MEXTRAM 504模型的SiGe异质结双极晶体管大信号模型。模型在保持MEXTRAM 504主要特征的条件下,省略了一些寄生效应,简化了参数提取过程。模型增加了软膝效应,软膝效应参数通过直流输出特性曲线拟合提取。模型的有效性是通过AMS 0.35um BiCMOS工艺加工的发射结面积为1×8 um2的SiGe HBT在直流,交流（50MHz-20GHz）条件下的测试数据验证的。结果表明,增加软膝效应后,模型的精度有所提高。模型由Verilog-A开发,使用ADS电路仿真器。     

MEXTRAM 504模型及其对SiGe HBT的模拟

针对传统SGP模型的不足，介绍了一种新型的BJT模型MEXTRAM 504及其等效电路．与传统模型相比，MEXTRAM显示了极高的准确度。由于特别增加了描述基区缓变和基区载流子复合的两个参数，使MAXTRAM适合模拟加入SiGe工艺技术的HBT，模拟曲线与Medici的模拟相当吻合，为射频器件设计和电路模拟奠定了良好的基础。     

MEXTRAM 504模型及其对SiGe HBT的模拟

针对传统SGP模型的不足,介绍了一种新型的BJT模型MEXTRAM 504及其等效电路,与传统模型相比。MEX-TRAM显示了极高的准确度。由于特别增加了描述基区缓变和基区载流子复合的两个参数,使MAXTRAM适合模拟加入SiGe工艺技术的HBT,模拟曲线与Medici的模拟相当吻合,为射频器件设计和电路模拟奠定了良好的基础。     

SiGe HBT非准静态小信号等效电路的参数提取

提出了一种硅锗异质结双极型晶体管（SiGe HBT）非准静态效应的小信号等效电路模型的参数提取方法。整个参数提取过程建立在由非准态效应的小信号等效电路推导出的一系列泰勒级数解析公式并结合参数直接法,该方法依赖于测量的S参数,不使用任何的数值优化法,参数提取结果使用CAD仿真验证。结果表明该参数提取方法简单易行,较为精确,该方法能够用到不同工艺SiGe HBT参数提取。     

SiGe HBT传输电流模型研究

基于SiGe异质结双极晶体管(HBT)大信号等效电路模型,建立了SiGe HBT传输电流模型.重点考虑发射结能带的不连续对载流子输运产生的影响,通过求解流过发射结界面的载流子密度,建立了SiGe HBT传输电流模型.该模型物理意义清晰,拓扑结构简单.对该模型进行了模拟,模拟结果与文献报道的结果符合得较好.将该模型嵌入PSPICE软件中,实现了对SiGe HBT器件与电路的模拟分析,并对器件进行了直流分析,分析结果与文献报道的结果符合得较好.     

SiGe HBT传输电流模型研究

基于SiGe异质结双极晶体管(HBT)大信号等效电路模型,建立了SiGe HBT传输电流模型.重点考虑发射结能带的不连续对载流子输运产生的影响,通过求解流过发射结界面的载流子密度,建立了SiGe HBT传输电流模型.该模型物理意义清晰,拓扑结构简单.对该模型进行了模拟,模拟结果与文献报道的结果符合得较好.将该模型嵌入PSPICE软件中,实现了对SiGe HBT器件与电路的模拟分析,并对器件进行了直流分析,分析结果与文献报道的结果符合得较好.     

用于微波功率器件的层级式片上功率合成技术

提出了一个包含版图分布参数和引线寄生参数在内的微波功率HBT的宏模型,建立了通过微波仿真进行器件结构优化的技术方法.基于以上模型和方法,较为全面地评估了实际器件中各寄生参数对器件输出功率的影响,继而提出了片上功率合成的层级式技术方案.数值计算指出,采用该方案,在相同版图面积并且器件的线性度等关键性指标得到保证的情况下,可有效地提高SiGe HBT的功率容量.     

SiGe HBT直流电流增益模型研究

基于器件结构特点和电学特性,研究了影响SiGe HBT(异质结双极晶体管)直流电流增益的主要因素,分析了不同的电流密度条件下,器件的物理参数、结构参数与集电极电流密度和中性基区复合电流的关系,建立了SiGe HBT集电极电流密度,空穴反注入电流密度、中性基区复合电流、SRH(Shockley-Read- Hall)复合电流密度、俄歇复合电流密度以及直流电流增益模型,对直流电流增益模型进行了模拟仿真,分析了器件物理、结构参数以及复合电流与直流电流增益的关系,得到了SiGe HBT直流电流增益特性的优化理论依据.     

SiGe HBT小信号和大信号建模与分析北大核心CSCD

基于异质结双极晶体管(HBT)优良的微波特性,精确建模对使用该类器件进行电路设计具有重要的意义。介绍了HBT所具有的独特优越性,采用Gummel-Poon等效电路模型对常用HBT进行了小信号和大信号模型的建立,加入了寄生电感等效衬底寄生参数,测试了SiGe HBT在不同偏置下的S参数及I-V特性曲线,利用半解析方法分析了非线性模型的参数提取,讨论了本征参数和寄生参数的拟合优化。给出了关于HBT大信号和小信号等效电路模型,对比实测参数进行验证,建立模型在测试频率范围内拟合结果和测试结果吻合良好。     

MEXTRAM model based SiGe HBT large-signal modeling

An improved large-signal equivalent-circuit model for SiGe HBTs based on the MEXTRAM model (level 504.5) is proposed. The proposed model takes into account the soft knee effect. The model keeps the main features of the MEXTRAM model even though some simplifications have been made in the equivalent circuit topology. This model is validated in DC and AC analyses for SiGe HBTs fabricated with 0.35-μm BiCMOS technology, 1×8μm2emitter area. Good agreement is achieved between the measured and modeled results for DC and S-parameters (from 50 MHz to 20 GHz), which shows that the proposed model is accurate and reliable. The model has been implemented in Vefilog-A using the ADS circuit simulator.     

SiGe HBT小信号等效电路的参数直接提取

提出了一种求解硅锗异质结双极型晶体管(SiGe HBT)小信号等效电路模型的参数直接提取方法.整个提取过程使用由小信号等效电路推导出的一系列解析表达式,不使用任何数值优化方法.参数提取结果使用ADS软件仿真验证.结果表明,该方法简单易行,较为精确.     

An improved parameter extraction method of SiGe HBTs' substrate network

In this letter, an improved method for substrate network parameter extraction of SiGe heterojunction bipolar transistors (HBTs) is proposed. It is found that, without taking the intrinsic circuit elements into consideration, the conductance of substrate network will be underestimated while the susceptance of substrate network will be overestimated. Therefore, an iteration procedure is developed to determine the intrinsic circuit elements of SiGe HBTs first. The intrinsic circuit elements are then applied to remove their influence on the substrate network parameter extraction. Compared with the conventional method, the proposed one can avoid some unphysical modeling results and provide reliable substrate network parameters.     

MEXTRAM modeling of Si-SiGe HPTs

The integration of the photodetector is essential for optical communication chips. The heterojunction phototransistor (HPT) is integrable with the SiGe HBT process and can be modeled by a modified MEXTRAM model for the circuit simulation. The impact ionization to obtain an extra gain for the optoelectronic conversion and the "early voltage reduction" under constant illumination are well modeled in a modified model. The base recombination current (nkT current) and the substrate contact to enhance the HPT speed are incorporated in ac model. It shows a good agreement between measurement and simulation.     

Direct parameter extraction of SiGe HBTs for the VBIC bipolar compact model

An improved direct parameter extraction method of SiGe heterojunction bipolar transistors (HBTs) for the vertical bipolar intercompany (VBIC)-type hybrid-/spl pi/ model is developed. All the equivalent circuit elements are extracted analytically from S-parameter data only and without any numerical optimization. The proposed technique of the parameter extraction, differing from the previous ones, focuses on correcting the pad de-embedding error for an accurate and invariant extraction of intrinsic base resistance (R/sub bi/), formulating a new parasitic substrate network, and improving the extraction procedure of transconductance (g/sub m/), dynamic base-emitter resistance (r/sub /spl pi//), and base-emitter capacitance (C/sub /spl pi//) using the accurately extracted R/sub bi/. The extracted parameters are frequency-independent and reliable due to elimination of any de-embedding errors. The agreements between the measured and model-calculated data are excellent in the frequency range of 0.2-10.2 GHz over a wide range of bias points. Therefore, we believe that the proposed extraction method is a simple and reliable routine applicable to the optimization of transistor design, process control, and the improvement of VBIC compact model, especially for SiGe HBTs.     

A Unified Model for Gate Capacitance–Voltage Characteristics and Extraction of Parameters of Si/SiGe Heterostructure pMOSFETs

A unified model for gate capacitance-voltage characteristics of Si/SiGe heterostructure pMOSFETs is presented. This model is applicable to buried-channel, surface-channel, and dual-channel Si/SiGe heterostructure pMOSFETs. The results from the model are compared with the experimental results and are found to be in excellent agreement. A simple and accurate method for the extraction of parameters such as the valence band offset, Si cap layer thickness, threshold voltages, and substrate doping is also presented in this paper.     

SiGe HBT高频噪声等效模型研究

对硅锗异质结双极型晶体管（SiGe HBT）等效高频噪声模型进行了研究,在建模过程中,SiGe HBT的等效电路为小信号准静态等效电路,使用二端口网络噪声相关矩阵技术从实测噪声参数提取基极和发射极的散粒噪声,提取结果与几种散粒噪声模型进行对比分析,重点研究半经验模型建立过程,对半经验模型与常用的噪声模型使用CAD仿真验证,结果表明了半经验模型的有效性、更具准确性,该半经验模型能够用到不同工艺SiGe HBT的高频噪声模拟。