其它电测量与仪表

0307853单相电能表检定装置用多绕组隔离电压互感器存在的问题及改进[刊]/徐家恒//电测与仪表.—2002,39(10).—16～20(D)针对目前各种单相电能表检定与配用的220V/220V 多绕组隔离电压互感器,提出了所存在的问题,并结合实践工作经验,给出了具体的改进措施。参3     

基于因子分析法的电子式电压互感器误差状态在线评估

电子式电压互感器由于结构复杂且工作环境恶劣,长时间运行后精度会大幅降低,影响电力系统的安全可靠性和电能贸易交易的公平性。针对传统的离线校验方法长时间停电需要标准互感器的缺点,文中提出一种基于因子分析法的电子式电压互感器误差状态在线评估方法。利用SPSS软件实现KMO检验和Bartlett球形检验,验证三相电子式电压互感器的二次输出数据适用于因子分析。在系统正常运行下实现模型训练,利用因子算法分离出特殊因子电子式电压互感器误差信号,建立特殊因子的Q统计量阈值;通过计算Q统计量的变化实现误差状态检测,通过Q统计量的贡献率实现三相电子式电压互感器异常准确定位。试验结果表明,所提方法可实现电子式电压互感器计量误差0.1%的在线评估,满足传统定期离线校验0.2级计量精度的评估标准,可为互感器在线监测提供新思路。     

0.01级电流互感器标准装置比值差不确定度的分析

根据国家强制检定的工作计量器具明细目录,互感器被列为强检计量器具,而电流互感器作为互感器的一种,具有等级多、数量多、种类多等特点,目前的应用范围非常广,互感器的误差准确与否关系到国家、企业甚至广大人民群众的切身利益,所以对检定互感器的标准装置展开评定是极为重要的。本文主要对0.01级电流互感器标准装置的比值差不确定度进行分析（相位差分析相同,略）,希望可以为这方面的其他研究提供一些帮助。     

影响变电站电能计量准确度的原因分析及解决措施

变电站的电量计量的准确度对计算变电站网络损耗起着重要作用。基于变电站实际运行中存在的问题,从电量计量系统的组成部分出发,分析了电流互感器、电压互感器、二次回路、计量表等部分对电能计量系统准确度的影响,并提出改善措施,为变电站的安全、稳定、经济运行提供了理论基础。     

分布式电能计量互感器检测仿真平台设计

电能计量互感器直接与供电企业和用户利益相关,因此电能计量互感器定检至关重要,为有效改善检定人员素质,本文设计了一种分布式仿真检定平台,其由控制台、电能计量互感器检测仿真平台等组成;本文较为详细阐述电能计量互感器检测仿真平台中关键设备的设计与实现.     

浅析10kV组合互感器误差检定方法

10kV组合互感器是一种专用的计量仪器,其计量准确与否直接影响着供电系统电能的管理和用户费用的支出,所以对于10kV组合互感器误差的检定方法进行综合分析十分必要.     

500kV电容式电压互感器测量不确定度评定分析

在电力系统当中,电容式的电压互感器主要是由于在电路工作的过程当中所产生的工频谐振所造成的频率所产生的,在整个过程当中,由于受到外界因素的影响,在很大程度会造成测量结果的失真问题,从而影响其电能质量.在此种情况下就需要对其测量结果的不确定性进行评价,最终对测量的方式进行不断的完善和修改.在本文中首先电容式电压互感器原理及误差检定进行了概述;其次对电容式电压互感器等效电路模型进行了仿真分析;最后提出了500kV电容式电压互感器的误差测量不确定度评定.     

基于PCB的空心线圈电流互感器的设计

为了实现数字化变电站信息通讯等的连通性、集成性,大量的传统电磁式电流互感器被电子式电流互感器所取代,然而大量电子器件、光学器件长期暴露在复杂恶劣的外界环境之中,电子式电流互感器故障率大幅提升。文章对电流互感器在线校准方法进行了研究,分析了电流互感器在线校准存在的问题,设计了基于PCB空心线圈的电流互感器,采用多组错开角度串联方式、双通道在线校准方法,测量误差小、精度高。     

谈谈低压电力客户电能计量装置的配置和计量方式的选择

电能计量装置包括各种类型电能表、计量用电压、电流互感器及其二次回路、电能计量柜(箱)等。其计量的电量是供电企业与电力客户进行电费结算的依据,在实际工作中电能计量装置的配置是否合理,计量方式的选择是否正确,直接关系到计量的公正和准确,本文根据中华人民共和国电力行业标准《电能计量装置技术管理规程》DL/T448—2000的规定,谈谈低压电力客户电能计量装置的配置和计量方式的选择。     

电厂电压互感器二次回路多点接地危害分析

本文从某500kV高压变电站中因电压电流互感器二次接线回路接地故障引起的回路异常现象原因分析问题入手,探讨了对于变电压电流互感器二次接线回路多点断线接地的物理危害、查找解决方法,阐述了回路出现异常电压互感器回路断线时如何通过分析判断可以确定其回路性质问题.并正确对其进行回路故障原因分析以及查找。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.