高效率双发光层结构白色荧光有机电致发光器件

通过将橙色荧光染料Rubrene和蓝色荧光染料BCzVBi分别掺入NPB和DPVBi中作为发光层,制备了结构为ITO/m-MTDATA(30nm)/NPB(20nm)/NPB∶0.5wt% Rubrene(10nm)/DPVBi∶5wt% BCzVBi(15nm)/Bphen(25nm)/LiF(0.6nm)/Al的双发光层结构白色有机荧光电致发光器件。器件发光主要是Rubrene直接俘获载流子和主体材料DPVBi到客体BCzVBi的能量传递两种发光机制竞争的结果。在低压下Rubrene俘获载流子发光占主导地位,导致器件的橙光相对较强,随电压升高主客体能量传递增强,使蓝光相对强度增强。器件最大电流效率为6.5cd/A,最大亮度为16 140cd/m2。亮度从1 000cd/m2增加到10 000cd/m2,器件的发光色坐标从(0.33,0.37)变化到(0.30,0.32),始终处于白光区。     

利用DPVBi的空穴阻挡和发光特性而制作的白光器件

介绍了结构为:ITO/m-MTDATA(40 nm)/NPB(5 nm)/DPVBi(10～12 nm)/Rubrene(0.5 nm)/DPVBi(20～18 nm)/Alq(50 nm)/LiF(0.5 nm)/Al的白光器件.该器件采用了两个DPVBi层中间夹一个Rubrene的薄层,这种结构充分利用了DPVBi的空穴阻挡特性和发光特性,有力地平衡了来自于DPVBi的蓝光、Alq的绿光和Rubrene的黄光,从而使器件发射性能较好的白光.当第一层的DPVBi和第二层的DPVBi的厚度分别是11 nm和19 nm时,其他层的厚度保持不变,该器件在15 V电压下,最大亮度为11 290 cd/m2 ,对应的效率为1.71 cd/A,色坐标为(0.25,0.27),属于白光发射;在6 V时,其最大效率为3.18 cd/A.     

空穴传输层NPBX厚度对白光OLED性能的影响

讨论了空穴传输层材料NPBX厚度对白光有机电致发光器件(OLED)性能的影响.采用了ITO/2T-NATA/NPBX/DPVBi/Rubrene/DPVBi/Rubrene/Alq3/LiF/Al的多层结构器件.在这种多层结构的器件中,其他材料的厚度保持不变,使NPBX的厚度按10、15、20、25 nm的规律改变.当NPBX厚度为15 am时,器件性能最好.该器件在14 V电压下最大亮度为19 300cd/m2,在7 V的电压下最大效率为5.326 cd/A,色坐标为(0.27,0.33).     

以Liq∶Rubrene为发光层的白色有机电致发光器件的研制

以蓝色发光材料Liq为主体,以一定的比例掺入黄光染料Rubrene,研制了新型白色有机电致发光器件.调节Rubrene的掺杂比为1.1%时得到近白光器件,色坐标为(0.308,0.347),器件的启亮电压为8V,当外加电压达到25V时,器件发光亮度达3120cd/m2.     

DPVBi高效、高亮度非掺杂蓝色有机电致发光器件

以典型蓝色发光材料—联苯乙烯衍生物(4,4′-bis(2,2′-diphenylvinyl)-1,1′-biphenyl,DPVBi)为发光层,采用MoO3为阳极缓冲层制备了结构简单的非掺杂型蓝色有机电致发光器件,得到了低压启动,效率、亮度和色度俱佳的蓝色发光器件。器件启亮电压为3.4V,最高外量子效率为3.2%,最高亮度达到15 840cd/m2,器件色坐标为(0.15,0.15)。高性能器件的获得归因于MoO3缓冲层的插入在阳极/有机层间形成了良好的欧姆接触。     

以Liq:Rubrene为发光层的白色有机电致发光器件的研制

以蓝色发光材料Liq为主体,以一定的比例掺入黄光染料Rubrene,研制了新型白色有机电致发光器件.调节Rubrene的掺杂比为1.1%时得到近白光器件,色坐标为(0.308,0.347),器件的启亮电压为8V,当外加电压达到25V时,器件发光亮度达3120cd/m2.     

基于DPVBi发光的新结构有机白光器件

介绍了结构为ITO/4,4',4"-tris{N,-(3-methylphenyl)-N-phenylamino}tripheny-lamine(m-MTDATA,40 nm)/N,N'-diphenyl-N,N'-bis(1-naphthyl)-(1,1'-biphenyl)-4,4'-diamine(NPB,5 nm)/4,4'-bis(2,2'diphenyl vinyl)-1,1'-biphenyl(DPVBi,x nm)/5,6,11,12,-tetraphenylnaphthacene(Rubrene,0.5 nm)/DPVBi(20 nm)/tris(8-hydroxyquinoline)aluminum(Alq,45-x nm)/LiF(0.5 nm)/Al的白光器件.采用了2个DPVBi层中间夹1个Rubrene的薄层,这种结构充分利用了DPVBi的空穴阻挡特性和发光特性,有力地平衡了来自于DPVBi的蓝光和Rubrene的黄光,从而使器件发出性能较好的白光.器件保持第2层DPVBi的厚度为20 nm,第1层的DPVBi的厚度按照5、8、11和14 nm的规律进行变化,相应改变Alq的厚度,使得这两者的总厚度为45 nm保持不变.当第1层DPVBi的厚度是8 nm、Alq的厚度是37 nm和其它层的厚度保持不变时,在13 V的电压下,器件的最大亮度为18 710 cd/m2,对应的效率为2.06 cd/A,色坐标为(0.29,0.30),属于白光发射.     

AND:Rubrene发光层的有机电致白光器件

利用9,10-bis(2-naphthyl) anthracene(AND)掺杂rubrene作为器件单一发光层,研制成功单层白光器件。器件在电流密度为140mA/cm2时,电流效率达到5.93cd/A;当电压为21V时,该器件达到最高亮度9300cd/m2。器件发光色坐标为(0.32,0.40),且随着电压的变化发光色度始终处于白光区。这种器件的白色发射是来源于AND(蓝色发射)和rubrene(橙色发散)的混合发射。与此同时,AND和rubrene二者之间会发生Frster能量传递。     

电压对有机蓝光器件发光光谱的影响

介绍了结构为ITO/40 nm 4,4′,4″-tris[N,-(3-methylphenyl)-N-phenylamino]tripheny- lamine(m-MTDATA)/5 nm N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′- diamine(NPB)/x nm 4,4-bis(2,2-diphenyl vinyl)-1,1-biphenyl(DPVBi)/y nm 6,11,12,- tetraphenylnaphthacene(Rubrene)/40 nm tris(8-hydroxyquinoline)aluminum(Alq)/0.5 nm LiF/Al的器件,其发光光谱的半峰宽在电压由2 V变为12 V时,由140 nm变为70 nm,器件发光的峰值波长由456 nm变为444nm的规律。半峰宽变窄是由于随着电压的升高,被Ru- brene俘获的电子获得了足够的能量,越过Rubrene层,在DPVBi中与注入的空穴形成激子而复合发光的概率的逐步增加所造成的。峰值波长蓝移是由于激子的形成区域随着电压的增加逐渐由DPVBi层移向NPB层造成的。器件峰值波长的这种变化对器件的色度改善有着很大的影响。     

掺杂浓度和厚度对有机白光器件性能的影响

介绍了结构为ITO/2T(20nm)/NPBX(15nm)/DPVBi(15nm)/Alq3:Rubrene(10,x)nm/Alq3(40nm)/LiF(0.5nm)/Al的掺杂方法制备的白光器件。其中掺杂浓度x分别为1%、2%、3%、4%和5%(质量分数)。这种结构充分利用了Rubrene在有机电致发光器件中的良好的掺杂特性,从而使器件发射出性能较好的白光。首先讨论了Rubrene的掺杂浓度对器件性能的影响。当Rubrene掺杂浓度是3%(质量分数)时,色度最好(0.32,0.32)且色坐标稳定。在此基础上,讨论了掺杂层厚度对器件性能的影响。掺杂层的厚度Y分别为10,15,20,25,30nm变化时,制作了5个器件。随着掺杂层厚度的增加,器件发出的蓝光和黄光相对平衡,色度较好。其中掺杂层厚度为20nm时,器件的效率和亮度均最高,分别达到5.10cd/A和17130cd/m2。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.