高出光率LED模组基板结构研究

针对带有常规的第一类反光杯的基板结构因受限于封装引线键合工艺而反光杯尺寸较小的情况,通过光学理论分析了其存在反射光线不完全的问题,提出在LED模组芯片间开设第二类反光结构的解决方案。并基于光学分析软件Tracepro的仿真研究,验证了其有效性。在此基础上设计了新型包含两类反光杯的基板结构,最高可使LED模组出光效率和中心光强与没有开反光杯的情况相比提升近23%和38%。     

一体化封装的LED仿真

以自主研发的一体化封装LED为模型,使用光学模拟软件TracePro对该模型的配光进行仿真。为了优化该模型的光强分布及出光率,对比分析了不同反光杯张角及透镜形状对LED配光性能的影响。仿真结果表明:反光杯张角及透镜形状对LED的光强分布及出光率均有较强影响。45°反光杯张角有着较好的光强分布。添加透镜可以提高出光率,扁平透镜可以达到较高的出光率。45°反光杯张角加半球形透镜在光强分布与出光率上取得均衡。     

基于补偿法的均匀照明自由曲面LED反光杯设计

根据面向理想光源的设计原理,提出了基于能量补偿和坐标迭代的自由曲面母线求解方法。在二维坐标系中建立系统模型,由反光杯反射光对直射投射光进行补偿,将反光杯右上边缘的光线反射到目标面左边缘,且随着光线下移反射光线逼近目标中心。根据Snell定律,以上边缘点为初始点,逐一迭代得母线上各点坐标,旋转或拉伸生成所求反光杯。在Tracepro软件中的模拟结果表明对圆形或正方形目标照度均匀性均优于85%,且系统能量利用率仅由LED出光角度和反光杯反射系数决定,该结构可使LED光源用于大范围照明。     

大功率集成LED光转换光源的研制

介绍了一种应用远程激发技术的大功率集成LED光转换光源,通过使用固晶区无绝缘层的镜面铝基板进行集成封装蓝光LED光源,即COB光源。所制蓝光光源与远程激发荧光粉模块结合制成LED光转换光源。利用镜面铝基板的高导热系数,解决多种LED封装形式下芯片点亮温度过高、光源衰减快的问题。采用LED荧光高分子模块与蓝光芯片分离结合的远程激发技术制成白光光源,解决荧光粉分布不均、热老化、色偏移问题。通过与传统粉胶封装方式制得的大功率集成LED器件比较测试,该种光源具有防眩光、光色均匀度高、长寿命、节能和环保的优点,从而具有更广泛的用途。     

基于多球面封装透镜的LED微型投影仪的光源设计

提高光能利用率是现阶段LED微型投影仪的技术难题,而提高光源的取光效率则是提高整机光效的前提和根本途径。对于以LED为代表的朗伯源,其光学元件的结构是制约光能利用率的最大因素。我们提出了一种基于多球面单透镜的LED光源设计方案并进行了光学仿真,将LED的一次封装和二次光学设计整合为一体,简化了光源系统结构,取光效率提高到94.9%,同时压缩了出光角度和光学扩展量。     

大功率LED用封装基板研究进展

LED被称为第四代照明光源及绿色光源,近几年来该产业发展迅猛.由于LED结温的高低直接影响到LED的出光效率、器件寿命和可靠性等,因此散热问题已经成为大功率LED产业发展的瓶颈.文章阐述了大功率LED基板的封装结构和散热封装技术的发展状况,从基板的结构特点、导热性能及封装应用等方面分别介绍了金属芯印刷电路基板、覆铜陶瓷...     

功率型LED封装技术

随着LED芯片输入功率的提高,带来了大的发热量及要求高的出光效率,给LED的封装技术提出了更新更高的要求,使得功率型LED的封装技术成为近年来的研究热点.首先介绍了几种主要的功率型LED封装结构,对功率型LED封装过程的关键技术,如荧光粉涂覆技术、散热技术、取光技术、静电防护技术等及未来发展方向进行了描述.指出功率型LED封装应选用新的封装材料,采用新的工艺和新的封装理念来提高LED的性能和光效,延长使用寿命,以推进LED固体光源的应用.     

多LED组合照明设计的关键技术

多LED组合型光源在灯具设计中应用日益广泛.多LED组合型光源既可以通过把多颗LED芯片直接封装在一个单体内,也可以把多颗封装好的单芯片LED光源在PCB设计时进行组合,两种实现途径决定了LED光源在尺寸、传热性能、可维护性等方面存在较大差异.LED串并联方式直接影响各LED支路的电流均衡性,为了确保各LED串联支路电流一致,文章给出了驱动设计中常用的几种方案.除此之外,还给出了利用普通环氧PCB板进行传热设计的解决方案,达到了与铝基PCB板相同的传热效果.     

LED封装结构对出光率的影响

出光率是影响LED发光效率的重要因素之一,优化LED出光率可以提高LED的器件发光效率。文章利用TracePro软件模拟分析了封装结构对LED出光率的影响,分析结果表明:封装腔体的形状与出光率关系不大,而封装腔体的张角、封装腔体顶面的凹凸性与出光率有较大关系,另外出光率还与腔体的高度、封装腔体的反射率、腔体的母线均相关。总之LED封装结构会影响LED出光率,在进行LED封装时,要选择合适的封装结构才能获得较高的LED出光率。     

大功率LED封装散热技术研究

LED被称为第四代照明光源或者绿色光源,广泛地应用于手机闪光灯、大中尺寸显示器光源模块以及特殊用途照明系统,并将被扩展至一般照明系统设备.由于LED结温的高低直接影响到LED的出光效率、器件寿命、发光波长和可靠性等,因此如何提高散热能力是大功率LED实现产业化亟待解决的关键技术之一.介绍并分析了国内外大功率LED散热封装技术的研究现状,总结了其发展趋势并提出减少内部热沉的热阻可能是今后的发展方向.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.