K-band MMIC active band-pass filters

Two K-band active band-pass filters using 0.15-/spl mu/m GaAs pHEMT technology, with one fixed-frequency and the other tunable, are designed, fabricated, and tested. The fixed-frequency filter has its central frequency at 22.6 GHz, with 900-MHz bandwidth (4%). The tunable filter can be tuned from 19.5 to 21.5 GHz with the same bandwidth. Both circuits have a common size of 1 mm /spl times/ 1 mm. To our knowledge, the tunable filter is the highest frequency tunable active filter ever reported.     

38-GHz-band high-power MMIC amplifier module for satellites onboard use

The design and development results of 38-GHz high-power MMIC amplifier modules for use in the solid-state power amplifier (SSPA) to be carried aboard Engineering Test Satellite VI in 1993 are presented. This amplifier will be used in millimeter-wave intersatellite communication experiments. For the development of this amplifier, high-power, highly reliable FETs with 0.25-μm-long gates were designed. The FET large-signal impedance was accurately measured using an improved load-pull method and MMIC transformers. The measurements were used to design two types of MMICs: one composed of two FET cells with 600-μm-wide gates and the other of four FET cells with 400-μm-wide gates. A two-stage amplifier package consisting of two of these MMICs that can be used at 38 GHz is also developed. A P _o(1 dB) of 25 dBm and a gain of 11 dB are obtained. A 38-GHz test conducted during chip screening achieves a high production yield without circuits adjustment     

38 GHz, coplanar waveguide GaAs MMIC amplifier

A GaAs MMIC coplanar waveguide amplifier is presented. It is realised on a 100 μm-thick substrate, thus leading to compatibility with microstrip circuits. An amplifier stabilisation technique is presented. It is shown that very good agreement between predictions and measurements may be obtained without any time-expensive bi- (tri-) dimensional electromagnetic simulation. The amplifier gain is ~15 dB at 38 GHz, and return losses are better than -18 dB     

60-GHz-band full-duplex radio-on-fiber system using two-RF-portelectroabsorption transceiver

A full-duplex radio-on-fiber system using a newly developed 60-GHz-band optical transceiver is investigated. We fabricated a 60-GHz-band two-radio-frequency (RF)-port electroabsorption transceiver (EAT) module, which is the first developed 60-GHz-band optical transceiver in the world. The EAT module has individual RF input and output ports, each with impedance-matching circuits that enhance modulation and detection efficiencies near 60 GHz. A radio-on-fiber testbed adopting the EAT has an advantage that a base station becomes the simplest configuration, which basically consists of only the 60-GHz-band EAT. Using the radio-on-fiber testbed, the simultaneous transmission of 59.6-GHz (downlink) and 60.0-GHz (uplink) signals with data of 156 Mb/s is experimentally demonstrated     

Compact superconducting coplanar meander line filters

Novel slow-wave coplanar waveguide (CPW) filters using high temperature superconductor (HTS) films are presented. Both half-wavelength and quarter-wavelength resonators are used in the filter topology. The miniaturisation is achieved using meander structure and interdigital grounding lines. A 3-pole Chebyshev bandpass filter has been designed, fabricated and studied. The untuned experimental results are in very good agreement with the simulated responses.     

Electronically switchable and tunable coplanar waveguide-slotlineband-pass filters

A coplanar waveguide (CPW)-slotline bandpass filter is described. The circuit allows planar integration of active and passive semiconductor devices both in series and in shunt. A microstrip-to-slotline transition designed to test the filter is also described. Two of the transitions exhibit an insertion loss of less than 1.0 dB over the 2.0-4.0-GHz range. A three-section CPW-slotline bandpass filter demonstrates an insertion loss of less than 0.2 dB over the passband centered at 2.9 GHz. A three-section CPW-slotline switchable bandpass filter integrated with three p-i-n diodes is discussed. It has a 0.7-dB insertion loss in the passband when the p-i-n diodes are off and a 25.0-dB isolation across the entire band when the p-i-n diodes are on. A three-section CPW-slotline varactor-tunable filter integrated with three varactor diodes is presented, showing a 2.0-dB insertion loss and over 20% electronic tuning range. Simple transmission line circuit models are used to optimize the design     

70-GHz-band MMIC transceiver with integrated antenna diversity system: application of receiver-module-arrayed self-heterodyne technique

Our proposed millimeter-wave self-heterodyne transmission technique is a simple and cost-effective solution to frequency stability problems in millimeter-wave access systems. In addition, this technique enables integration of a high-sensitivity receiver with a combining antenna diversity system that is approximately as effective as a maximal-ratio-combining antenna diversity system for all directions of signal arrival. We explain how our newly developed 70-GHz-band transceiver using the millimeter-wave self-heterodyne transmission technique with a receiver-module array can greatly improve receiver sensitivity for all directions of signal arrival i.e., without affecting the signal reception beam pattern and how this can solve the signal-fading problem in a multipath signal propagation environment. We also theoretically demonstrate that receiver sensitivity improves in proportion to the number of elements in a receiver-module array, and experimentally confirm this using an experimental 70-GHz-band monolithic microwave integrated circuit transceiver with a 4/spl times/2 receiver-module array. We show that millimeter-wave signal propagation can be modeled using a two-path model, and that serious signal fading depends on the transceiver height and transmission distance. Carrier and modulated signal transmission experiments using our developed transceiver have revealed that use of a receiver-module array greatly reduces the signal-fading problem in a multipath signal propagation environment. In the signal transmission experiment, we succeeded in transmitting an orthogonal frequency-division multiplexing signal over a 4-m transmission distance with bit-error-free performance.     

MMIC tunable active notch filter

A novel microwave notch filter is reported which has a single-stage reflection topology. The identical RLC reflection terminations employ independent voltage controlled elements. As a result, the Q-factor and notch frequency can be varied. An experimental notch filter, tunable from 2 to 3.5 GHz, has been successfully realised using monolithic technology     

60-GHz pseudomorphic-MODFET low-noise MMIC amplifiers

The development of V-band low-noise monolithic microwave integrated circuits (MMICs) based on pseudomorphic modulation-doped FETs (P-MODFETs) is presented. These dual-stage MMICs incorporate P-MODFETs, with 0.35-μm×60-μm gates, as the active elements, electron-beam-written tuning elements, and DC-blocking and bias networks. The dual-stage chips exhibited a maximum gain of 10.2 dB at 59.5 GHz and a minimum noise figure of 5.3 dB, with an associated gain of 8.2 dB at 58.2 GHz. A cascaded four-stage amplifier using two MMIC modules exhibited 5.8-dB minimum noise figure with an associated gain of 18.3 dB at 58 GHz and up to 21.1 dB of maximum gain     

40-GHz coplanar waveguide bandpass filters on silicon substrate

We report a very simple process to fabricate high performance filter on Si at 40 GHz using proton implantation. The filter has only -3.4-dB loss at peak transmission of 40 GHz with a broad 9-GHz bandwidth. In sharp contrast, the filter on 1.5-/spl mu/m SiO/sub 2/ isolated Si has much worse transmission and reflection loss. This is the first demonstration of high performance filter at the millimeter-wave regime on Si with process compatible with current VLSI technology.     

Miniaturized coplanar waveguide bandpass filters using multisection stepped-impedance resonators

We report several types of coplanar waveguide tri-section stepped-impedance resonator (SIR) structures that offer further size reduction compared to the conventional two-section SIRs. In addition, the tri-section SIRs provide flexibility of introducing effective capacitive coupling to the ground lines for realizing slow-wave structures. The slow-wave effect can be used to implement more compact bandpass filters. The principles of achieving size reductions using tri-section SIRs are described and confirmed by simulation results. To demonstrate the effectiveness of the proposed tri-section SIRs in size reduction, the tri-section SIRs with slow-wave effects were implemented in a two-pole directly coupled bandpass filter and a fourth-order quasi-elliptic bandpass filter with reduced size. The measured results matched well with the theoretical prediction.     

Synthesizing active filters

The primary purpose of this article is to present a unified, comprehensive survey of accomplishments in the field of network synthesis for linear, lumped, and finite networks from 1965 through early 1968.* Because of the large number of contributions made during this period, only a sampling of the many significant works is presented here, with much of the material in the form of results. It is the author's hope that the extensive list of references included will be useful in providing the additional information necessary.     

Wave active filters

A method is described and implemented for the derivation of active RC filters from analogue passive filters of the lossless ladder doubly terminated kind. The method is based on scattering-parameter formulation and the active RC filters thus derived are referred to as wave active filters.     

Time-multiplexed active filters

The inductorless realization of high-order voltage transfer functions is achieved by subdividing a conventional realization into identical memoryless active subnetworks; the realization is then achieved by time multiplexing one of the memoryless active subnetworks such that it effectively replaces the total number of active subnetworks. The result of this time-multiplexing operation is to create a new type of RC-active filter that exhibits many practical advantages, such as lower power dissipation and a considerable saving in circuit complexity. The synthesis technique is illustrated by means of the design of a sixteenth-order low-pass transfer function. Nonideal performance is analyzed.     

A tunable all-pass MMIC active phase shifter

This paper describes a novel structure for a monolithic-microwave integrated-circuit active phase shifter based on a bridge all-pass network. The design procedure has been developed, leading to a fixed-frequency circuit with large tunable phase variation, associated to a low-gain ripple, and requiring nearly no design optimization. Simulated results predicted an analog tunable 180/spl deg/ phase variation, at 5-GHz operation frequency. The circuit was implemented using GEC-Marconi pseudomorphic high electron-mobility transistor H40 technology, and measured results validated the proposed design method and circuit structure.     

60GHz高增益宽带单片集成低噪声放大器

基于0.15μm GaAs pHEMT工艺,设计和制作了一款宽带单片集成低噪声放大器.放大器设计采用四级级联的拓扑结构以获得高增益.芯片尺寸2mm×lmm.实测性能指标为:工作频段45～65GHz,增益18±1.5dB,输入驻波比小于3,输出驻波比小于2.3,直流功耗96mW.在增益、带宽和功耗上达到国际现有产品指标.该芯片可被应用于60GHz宽带无线通信系统.     

Wide- and narrow-band bandpass coplanar filters in the W-frequency band

This paper deals with the design of passive coplanar devices in the W-frequency band. As long as coplanar transmission lines are correctly dimensioned, analytical models based on quasi-TEM approximation can be used. Such models are associated with a correct definition of the reference planes at the junctions and employed for junction discontinuities, T- and cross-junctions. In order to validate these assertions, simulated and experimental data on classical quarter-wavelength shunt-stub filters are first presented. Then the design of traditional coupled-line filters is examined. The problems in terms of insertion loss associated with these kinds of narrow-band applications are discussed here. Minimization of insertion losses requires increasing the width of the strips. Consequently, the design becomes complex and modeling using transmission-line models less accurate. Nevertheless, as an optimization procedure is needed to tune the filter theoretically, such a very fast design method is necessary. Simulated and experimental results in the range 500 MHz to 110 GHz are compared throughout the paper.     

60GHz高增益宽带单片集成低噪声放大器

基于0.15μm GaAs pHEMT工艺,设计和制作了一款宽带单片集成低噪声放大器.放大器设计采用四级级联的拓扑结构以获得高增益.芯片尺寸2mm×lmm.实测性能指标为:工作频段45～65GHz,增益18±1.5dB,输入驻波比小于3,输出驻波比小于2.3,直流功耗96mW.在增益、带宽和功耗上达到国际现有产品指标.该芯片可被应用于60GHz宽带无线通信系统.     

High-performance microwave coplanar bandpass and bandstop filters on Si substrates

High-performance bandpass and bandstop microwave coplanar filters, which operate from 22 to 91 GHz, have been fabricated on Si substrates. This was achieved using an optimized proton implantation process that converts the standard low-resistivity (/spl sim/10 /spl Omega//spl middot/cm) Si to a semi-insulating state. The bandpass filters consist of coupled lines to form a series resonator, while the bandstop filter was designed in a double-folded short-end stub structure. For the bandpass filters at 40 and 91 GHz, low insertion loss was measured, close to electromagnetic simulation values. We also fabricated excellent bandstop filters with very low transmission loss of /spl sim/1 dB and deep band rejection at both 22 and 50 GHz. The good filter performance was confirmed by the higher substrate impedance to ground, which was extracted from the well-matched S-parameter equivalent-circuit data.