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1.
Since the beginning of organic light‐emitting diodes (OLEDs), blue emission has attracted the most attention and many research groups worldwide have worked on the design of materials for stable and highly efficient blue OLEDs. However, almost all the high‐efficiency blue OLEDs using fluorescent materials are multilayer devices, which are constituted of a stack of organic layers to improve the injection, transport, and recombination of charges within the emissive layer. Although the technology has been mastered, it suffers from real complexity and high cost and is time‐consuming. Simplifying the multilayer structure with a single‐layer one, the simplest devices made only of electrodes and the emissive layer have appeared as an appealing strategy for this technology. However, removing the functional organic layers of an OLED stack leads to a dramatic decrease of the performance and achieving high‐efficiency blue single‐layer OLEDs requires intense research especially in terms of materials design. Herein, an exhaustive review of blue emitting fluorophores that have been incorporated in single‐layer OLEDs is reported, and the links between their electronic properties and the device performance are discussed. Thus, a structure/properties/device performance relationship map is drawn, which is of interest for the future design of organic materials.  相似文献   

2.
The degradation mechanisms of phosphorescent organic light‐emitting devices (PhOLEDs) are studied. The results show that PhOLED degradation is closely linked to interactions between excitons and positive polarons in the host material of the emitter layer (EML), which lead to its aggregation near the EML/electron transport layer (ETL) interface. This exciton–polaron‐induced aggregation (EPIA) is associated with the emergence of new emission bands at longer wavelengths in the electroluminescence spectra of these materials, which can be detected after prolonged device operation. Such EPIA processes are found to occur in a variety of wide‐bandgap materials commonly used as hosts in PhOLEDs and are correlated with device degradation. Quite notably, the extent of EPIA appears to correlate with the material's bandgap rather than with the glass‐transition temperature. The findings uncover a new degradation mechanism, caused by polaron‐exciton interactions, that appears to be behind the lower stability of OLEDs utilizing wide‐bandgap materials in general. The same degradation mechanism can be expected to be present in other organic optoelectronic devices.  相似文献   

3.
A novel, highly efficient hole injection material based on a conducting polymer polythienothiophene (PTT) doped with poly(perfluoroethylene‐perfluoroethersulfonic acid) (PFFSA) in organic light‐emitting diodes (OLEDs) is demonstrated. Both current–voltage and dark‐injection‐current transient data of hole‐only devices demonstrate high hole‐injection efficiency employing PTT:PFFSA polymers with different organic charge‐transporting materials used in fluorescent and phosphorescent organic light‐emitting diodes. It is further demonstrated that PTT:PFFSA polymer formulations applied as the hole injection layer (HIL) in OLEDs reduce operating voltages and increase brightness significantly. Hole injection from PTT:PFFSA is found to be much more efficient than from typical small molecule HILs such as copper phthalocyanine (CuPc) or polymer HILs such as polyethylene dioxythiophene: polystyrene sulfonate (PEDOT‐PSS). OLED devices employing PTT:PFFSA polymer also demonstrate significantly longer lifetime and more stable operating voltages compared to devices using CuPc.  相似文献   

4.
The degradation mechanism is compared in organic light‐emitting devices (OLEDs) fabricated by solution‐coating to that in vacuum‐deposited OLEDs. Devices comprising various host materials made by vacuum‐deposition or solution‐coating are investigated. Changes in devices electroluminescence (EL) spectra during prolonged electrical driving are compared and analyzed. Hole‐only devices are also utilized, and employed to study the effects of charges and excitons, separately and combined. The results reveal that the faster degradation of solution‐processed devices relative to their vacuum‐deposited counterparts under electrical stress is due to a faster aggregation of the host materials. Interactions between excitons and polarons in the emitting layers of the devices induce this aggregation phenomenon. Although this phenomenon affects both vacuum‐deposited and solution‐coated emitting layers, it is found to occur much faster in the later. The findings shed light on the root causes of the limited stability of solution‐processed OLEDs.  相似文献   

5.
The performance of organic light‐emitting devices (OLEDs) is strongly influenced by the electronic properties of the employed materials. In order to determine the effect of these materials' parameters, several different hole‐transporting 1,3,5‐tris(4‐diphenylaminophenyl)benzenes (TDAPBs) were synthesised. These TDAPBs contained different substituents, different numbers of substituents and different positions of theses substituents. For the evaluation of the electronic properties, cyclic voltammetry was employed in order to determine the HOMO values, and time‐of‐flight (TOF) measurements to obtain the hole mobilities. OLEDs were prepared consisting of the TDAPBs blended in a polymer matrix, and of Alq3 as electron‐conducting and light‐emitting layer. These devices were investigated regarding their current density/voltage characteristics, efficiencies, onset voltages for electroluminescence, and lifetimes. For hole‐transporting blend systems an exponential relationship between the current density and the HOMO levels of the TDAPBs was found. However, even though the HOMO values cover a range from −5.09 to −5.35 eV, no effects on the performance of the OLEDs were detected for electroluminescent two‐layer systems. In this case the initial voltage seems to be a determining parameter for the behaviour of the devices during operation. Copyright © 1999 John Wiley & Sons, Ltd.  相似文献   

6.
π‐conjugated molecular organics such as rubrene, Alq3, fullerene, and PCBM have been used extensively over the last few decades in numerous organic electronic devices, including solar cells, thin‐film transistors, and large‐area, low‐cost flexible displays. Rubrene and Alq3, have emerged as promising platforms for spin‐based classical and quantum information processing, which has triggered significant research activity in the relatively new area of organic spintronics. Synthesis of these materials in a nanowire geometry, with feature sizes in the sub‐100 nm regime, is desirable as it often enhances device performance and is essential for development of high‐density molecular electronic devices. However, fabrication techniques that meet this stringent size constraint are still largely underdeveloped. Here, a novel, versatile, and reagentless method that enables growth of nanowire arrays of the above‐mentioned organics in the cylindrical nanopores of anodic aluminum oxide (AAO) templates is demonstrated. This method 1) allows synthesis of high‐density organic nanowire arrays on arbitrary substrates, 2) provides electrical access to the nanowire arrays, 3) offers tunability of the array geometry in a range overlapping with the relevant physical length scales of many organic devices, and 4) can potentially be extended to synthesize axially and radially heterostructured organic nanowires. Thus prepared nanowires are characterized extensively with an aim to identify their potential applications in diverse areas such as organic optoelectronics, photovoltaics, molecular nanoelectronics, and spintronics.  相似文献   

7.
Previous studies have identified triplet‐triplet annihilation and triplet‐polaron quenching as the exciton density‐dependent mechanisms which give rise to the efficiency roll‐off observed in phosphorescent organic light‐emitting devices (OLEDs). In this work, these quenching processes are independently probed, and the impact of the exciton recombination zone width on the severity of quenching in various OLED architectures is examined directly. It is found that in devices employing a graded‐emissive layer (G‐EML) architecture the efficiency roll‐off is due to both triplet‐triplet annihilation and triplet‐polaron quenching, while in devices which employ a conventional double‐emissive layer (D‐EML) architecture, the roll‐off is dominated by triplet‐triplet annihilation. Overall, the efficiency roll‐off in G‐EML devices is found to be much less severe than in the D‐EML device. This result is well accounted for by the larger exciton recombination zone measured in G‐EML devices, which serves to reduce exciton density‐driven loss pathways at high excitation levels. Indeed, a predictive model of the device efficiency based on the quantitatively measured quenching parameters shows the role a large exciton recombination zone plays in mitigating the roll‐off.  相似文献   

8.
Organic single crystals have a great potential in the field of organic optoelectronics because of their advantages of high carrier mobility and high thermal stability. However, the application of the organic single crystals in light‐emitting devices (OLEDs) has been limited by single‐layered structure with unbalanced carrier injection and transport. Here, fabrication of a multilayered‐structure crystal‐based OLED constitutes a major step toward balanced carrier injection and transport by introducing an anodic buffer layer and electron transport layer into the device structure. Three primary color single‐crystal‐based OLEDs based on the multilayered structure and molecular doping exhibit a maximum luminance and current efficiency of 820 cd cm?2 and 0.9 cd A?1, respectively, which are the highest performance to date for organic single‐crystal‐based OLEDs. This work paves the way toward high‐performance organic optoelectronic devices based on the organic single crystals.  相似文献   

9.
The introduction of new substrate materials into the world of electronics has previously opened up new possibilities for novel applications and device designs. Here, the use of ion‐exchanged sodium aluminosilicate (NAS) glass is presented as a new type of substrate that is not only highly damage resistant, but also allows the fabrication of high performance organic electronic devices. The smoothness of the NAS glass surface enables favorable growth of the semiconductor layer, enabling high charge carrier mobilities for typical organic semiconductors, such as pentacene or C60, and a polymer semiconductor. No degradation of the device performance is observed as a result of ion migration into the active device region, and no compromise in substrate strength due to the processing conditions is made. This work suggests the possibility of new, highly durable electronic devices on glass in large area format.  相似文献   

10.
Efficient transparent organic light‐emitting diodes (OLEDs) with improved stability based on conductive, transparent poly(3,4‐ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) electrodes are reported. Based on optical simulations, the device structures are carefully optimized by tuning the thickness of doped transport layers and electrodes. As a result, the performance of PEDOT:PSS‐based OLEDs reaches that of indium tin oxide (ITO)‐based reference devices. The efficiency and the long‐term stability of PEDOT:PSS‐based OLEDs are significantly improved. The structure engineering demonstrated in this study greatly enhances the overall performances of ITO‐free transparent OLEDs in terms of efficiency, lifetime, and transmittance. These results indicate that PEDOT:PSS‐based OLEDs have a promising future for practical applications in low‐cost and flexible device manufacturing.  相似文献   

11.
The present work investigates the influence of the n‐type layer in the connecting unit on the performance of tandem organic light‐emitting devices (OLEDs). The n‐type layer is typically an organic electron‐transporting layer doped with reactive metals. By systematically varying the metal dopants and the electron‐transporting hosts, we have identified the important factors affecting the performance of the tandem OLEDs. Contrary to common belief, device characteristics were found to be insensitive to metal work functions, as supported by the ultraviolet photoemission spectroscopy results that the lowest unoccupied molecular orbitals of all metal‐doped n‐type layers studied here have similar energy levels. It suggests that the electron injection barriers from the connecting units are not sensitive to the metal dopant used. On the other hand, it was found that performance of the n‐type layers depends on their electrical conductivities which can be improved by using an electron‐transporting host with higher electron mobility. This effect is further modulated by the optical transparency of constituent organic layers. The efficiency of tandem OLEDs would decrease as the optical transmittance decreases.  相似文献   

12.
Grafting six fluorene units to a benzene ring generates a new highly twisted core of hexakis(fluoren‐2‐yl)benzene. Based on the new core, six‐arm star‐shaped oligofluorenes from the first generation T1 to third generation T3 are constructed. Their thermal, photophysical, and electrochemical properties are studied, and the relationship between the structures and properties is discussed. Simple double‐layer electroluminescence (EL) devices using T1–T3 as non‐doped solution‐processed emitters display deep‐blue emissions with Commission Internationale de l'Eclairage (CIE) coordinates of (0.17, 0.08) for T1 , (0.16, 0.08) for T2 , and (0.16, 0.07) for T3 . These devices exhibit excellent performance, with maximum current efficiency of up to 5.4 cd A?1, and maximum external quantum efficiency of up to 6.8%, which is the highest efficiency for non‐doped solution‐processed deep‐blue organic light‐emitting diodes (OLEDs) based on starburst oligofluorenes, and is even comparable with other solution‐processed deep‐blue fluorescent OLEDs. Furthermore, T2‐ and T3‐ based devices show striking blue EL color stability independent of driving voltage. In addition, using T0–T3 as hole‐transporting materials, the devices of indium tin oxide (ITO)/poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS)/ T0–T3 /tris(8‐hydroxyquinolinato)aluminium (Alq3)/LiF/Al achieve maximum current efficiencies of 5.51–6.62 cd A?1, which are among the highest for hole‐transporting materials in identical device structure.  相似文献   

13.
Contact resistance significantly limits the performance of organic field‐effect transistors (OFETs). Positioning interlayers at the metal/organic interface can tune the effective work‐function and reduce contact resistance. Myriad techniques offer interlayer processing onto the metal pads in bottom‐contact OFETs. However, most methods are not suitable for deposition on organic films and incompatible with top‐contact OFET architectures. Here, a simple and versatile methodology is demonstrated for interlayer processing in both p‐ and n‐type devices that is also suitable for top‐contact OFETs. In this approach, judiciously selected interlayer molecules are co‐deposited as additives in the semiconducting polymer active layer. During top contact deposition, the additive molecules migrate from within the bulk film to the organic/metal interface due to additive‐metal interactions. Migration continues until a thin continuous interlayer is completed. Formation of the interlayer is confirmed by X‐ray photoelectron spectroscopy (XPS) and cross‐section scanning transmission electron microscopy (STEM), and its effect on contact resistance by device measurements and transfer line method (TLM) analysis. It is shown that self‐generated interlayers that reduce contact resistance in p‐type devices, increase that of n‐type devices, and vice versa, confirming the role of additives as interlayer materials that modulate the effective work‐function of the organic/metal interface.  相似文献   

14.
The field of organic electronics has been developed vastly in the past two decades due to its promise for low cost, lightweight, mechanical flexibility, versatility of chemical design and synthesis, and ease of processing. The performance and lifetime of these devices, such as organic light‐emitting diodes (OLEDs), photovoltaics (OPVs), and field‐effect transistors (OFETs), are critically dependent on the properties of both active materials and their interfaces. Interfacial properties can be controlled ranging from simple wettability or adhesion between different materials to direct modifications of the electronic structure of the materials. In this Feature Article, the strategies of utilizing surfactant‐modified cathodes, hole‐transporting buffer layers, and self‐assembled monolayer (SAM)‐modified anodes are highlighted. In addition to enabling the production of high‐efficiency OLEDs, control of interfaces in both conventional and inverted polymer solar cells is shown to enhance their efficiency and stability; and the tailoring of source–drain electrode–semiconductor interfaces, dielectric–semiconductor interfaces, and ultrathin dielectrics is shown to allow for high‐performance OFETs.  相似文献   

15.
n‐Doping electron‐transport layers (ETLs) increases their conductivity and improves electron injection into organic light‐emitting diodes (OLEDs). Because of the low electron affinity and large bandgaps of ETLs used in green and blue OLEDs, n‐doping has been notoriously more difficult for these materials. In this work, n‐doping of the polymer poly[(9,9‐dioctylfluorene‐2,7‐diyl)‐alt‐(benzo[2,1,3]thiadiazol‐4,7‐diyl)] (F8BT) is demonstrated via solution processing, using the air‐stable n‐dopant (pentamethylcyclopentadienyl)(1,3,5‐trimethylbenzene)ruthenium dimer [RuCp*Mes]2. Undoped and doped F8BT films are characterized using ultraviolet and inverse photoelectron spectroscopy. The ionization energy and electron affinity of the undoped F8BT are found to be 5.8 and 2.8 eV, respectively. Upon doping F8BT with [RuCp*Mes]2, the Fermi level shifts to within 0.25 eV of the F8BT lowest unoccupied molecular orbital, which is indicative of n‐doping. Conductivity measurements reveal a four orders of magnitude increase in the conductivity upon doping and irradiation with ultraviolet light. The [RuCp*Mes]2‐doped F8BT films are incorporated as an ETL into phosphorescent green OLEDs, and the luminance is improved by three orders of magnitude when compared to identical devices with an undoped F8BT ETL.  相似文献   

16.
Aggregation‐induced emission (AIE) materials are highly attractive because of their excellent properties of high efficiency emission in nondoped organic light‐emitting diodes (OLEDs). Therefore, a deep understanding of the working mechanisms, further improving the electroluminescence (EL) efficiency of the resulting AIE‐based OLEDs, is necessary. Herein, the conversion process from higher energy triplet state (T2) to the lowest singlet state (SS1) is found in OLEDs based on a blue AIE material, 4′‐(4‐(diphenylamino)phenyl)‐5′‐phenyl‐[1,1′:2′,1′′‐terphenyl]‐4‐carbonitrile (TPB‐AC), obviously relating to the device efficiency, by magneto‐EL (MEL) measurements. A special line shape with rise at low field and reduction at high field is observed. The phenomenon is further clarified by theoretical calculations, temperature‐dependent MELs, and transient photoluminescence emission properties. On the basis of the T2‐S1 conversion process, the EL performances of the blue OLEDs based on TPB‐AC are further enhanced by introducing a phosphorescence doping emitter in the emitting layer, which effectively regulates the excitons on TPB‐AC molecules. The maximum external quantum efficiency (EQE) reaches 7.93% and the EQE keeps 7.57% at the luminance of 1000 cd m?2. This work establishes a physical insight for designing high‐performance AIE materials and devices in the future.  相似文献   

17.
Although significant progress has been made in the development of vacuum‐deposited small‐molecule organic light‐emitting diodes (OLEDs), one of the most desired research goals is still to produce flexible displays by low‐cost solution processing. The development of solution‐processed OLEDs based on small molecules could potentially be a good approach but no intensive studies on this topic have been conducted so far. To fabricate high‐performance devices based on solution‐processed small molecules, the underlying nature of the produced films and devices must be elucidated. Here, the distinctive characteristics of solution‐processed small‐molecule films and devices compared to their vacuum‐deposited counterparts are reported. Solution‐processed blue OLEDs show a very high luminous efficiency (of about 8.9 cd A–1) despite their simplified structure. A better hole‐blocking and electron‐transporting layer is essential for achieving high‐efficiency solution‐processed devices because the solution‐processed emitting layer gives the devices a better hole‐transporting capability and more electron traps than the vacuum‐deposited layer. It is found that the lower density of the solution‐processed films (compared to the vacuum‐deposited films) can be a major cause for the short lifetimes observed for the corresponding devices.  相似文献   

18.
Physically flexible electronics offer a wide range of benefits, including the development of next‐generation consumer electronics and healthcare products. The advancement of physical flexibility, typically achieved by the reduction of the total device thickness, including substrates and encapsulation layers, shows great promise for skin‐laminated electronics. Organic electronics—devices relying on carbon‐based materials—offer many advantages over their inorganic counterparts, including the following: significantly lower fabrication temperatures resulting in alternative fabrication techniques, including inkjet and roll‐to‐roll printing, enabling low‐cost and large‐area fabrication; biocompatibility; and spectacular physical flexibility. This article presents a review, spanning the last two decades, of organic field‐effect transistors with the total thickness of just a few microns as well as devices demonstrated in this decade with a total thickness of few hundred of nanometers. A handful of demonstrations of other organic electronic thin film devices are also presented.  相似文献   

19.
The contact resistance is known to severely hamper the performance of organic thin‐film transistors, especially when dealing with large injection barriers, high mobility organic semiconductors, or short channel lengths. Here, the relative significance of how it is affected by materials‐parameters (mobility and interfacial level‐offsets) and geometric factors (bottom‐contact vs top‐contact geometries) is assessed. This is done using drift‐diffusion‐based simulations on idealized device structures aiming at a characterization of the “intrinsic” situation in the absence of traps, differences in the film morphology, or metal‐atoms diffusing into the organic semiconductor. It is found that, in contrast to common wisdom, in such a situation the top‐contact devices do not always outperform the bottom‐contact ones. In fact, the observed ratio between the contact resistances of the two device structures changes by up to two orders of magnitude depending on the assumed materials parameters. The contact resistance is also shown to be strongly dependent on the hole mobility in the organic semiconductor and influenced by the chosen point of operation of the device.  相似文献   

20.
Organic single crystals have attracted great attention because of their advantages of high charge‐carrier mobility, high chemical purity, and potential for flexible optoelectronic devices. However, their intrinsic properties of sensitive to organic solvent and fragile result in a difficulty in the fabrication of the organic crystal‐based devices. In this work, a simple and non‐destructive technique of template stripping is employed to fabricate single‐crystal‐based organic light‐emitting devices (OLEDs). Efficient and uniform carrier injection induced by an improved contact between crystals and both top and bottom electrodes is realized, so that a homogeneous and bright electroluminescence (EL) are obtained. Highly polarized EL and even white emission is also observed. Moreover, the crystal‐based OLEDs exhibit good flexibility, and keep stable EL under a small bending radius and after repeated bending. It is expectable that this technique would support broad applications of the organic single crystals in the crystal‐based optoelectronic devices.  相似文献   

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