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1.
A MEL‐type pure‐silica zeolite (PSZ), prepared by spin‐on of nanoparticle suspensions, has been shown to be a promising ultra‐low‐dielectric‐constant (k) material because of its high mechanical strength, hydrophobicity, and chemical stability. In our previous works, a two‐stage synthesis method was used to synthesize a MEL‐zeolite nanoparticle suspension, in which both nanocrystal yield and particle size of the zeolite suspension increased with increasing synthesis time. For instance, at a crystal yield of 63%, the particle size is 80 nm, which has proved to be too large because it introduces a number of problems for the spin‐on films, including large surface roughness, surface striations, and large mesopores. In the current study, the two‐stage synthesis method is modified into an evaporation‐assisted two‐stage method by adding a solvent‐evaporation process between the two thermal‐treatment steps. The modified method can yield much smaller particle sizes (e.g., 14 vs. 80 nm) while maintaining the same nanocrystal yields as the two‐stage synthesis. Furthermore, the nanoparticle suspensions from the evaporation‐assisted two‐stage synthesis show a bimodal particle size distribution. The primary nanoparticles are around 14 nm in size and are stable in the final suspension with 60% solvent evaporation. The factors that affect nanocrystal synthesis are discussed, including the concentration, pH value, and viscosity. Spin‐on films prepared by using suspensions synthesized this way have no striations and improved elastic modulus (9.67 ± 1.48 GPa vs. 7.82 ± 1.30 GPa), as well as a similar k value (1.91 ± 0.09 vs. 1.89 ± 0.08) to the previous two‐stage synthesized films.  相似文献   

2.
A low‐temperature synthesis coupled with mild activation produces zeolite films exhibiting low dielectric constant (low‐k) matching the theoretically predicted and experimentally measured values for single crystals. This synthesis and activation method allows for the fabrication of a device consisting of a b‐oriented film of the pure‐silica zeolite MFI (silicalite‐1) supported on a gold‐coated silicon wafer. The zeolite seeds are assembled by a manual assembly process and subjected to optimized secondary growth conditions that do not cause corrosion of the gold underlayer, while strongly promoting in‐plane growth. The traditional calcination process is replaced with a nonthermal photochemical activation to ensure preservation of an intact gold layer. The dielectric constant (k), obtained through measurement of electrical capacitance in a metal–insulator–metal configuration, highlights the ultralow k ≈ 1.7 of the synthetized films, which is among the lowest values reported for an MFI film. There is large improvement in elastic modulus of the film (E ≈ 54 GPa) over previous reports, potentially allowing for integration into silicon wafer processing technology.  相似文献   

3.
Low‐dielectric‐constant (low‐κ) materials are a critical requirement for future generations of computer microprocessors. As a unique class of porous silicas, pure silica zeolites (PSZs) have been shown to be a promising low‐κ material with excellent mechanical strength (e.g., elastic modulus of 16–18 GPa) due to their crystalline nature. In the present study, we show for the first time that higher crystallinity of spin‐on PSZ MFI films leads to lower κ values and less moisture sensitivity—two critical properties of a porous low‐κ material. We have also advanced the two‐stage synthesis method to produce zeolite nanoparticles with high yield (77 %) and a small diameter (< 80 nm). A κ value of 1.6 is obtained from the silylated highly crystalline PSZ MFI film and the κ value only increases by 12.5 % after exposure to ambient conditions for a period of 24 h.  相似文献   

4.
In this paper n‐type semiconductors synthesized via selective fourfold cyanation of the ortho‐ and bay‐positions (2,5,10,13‐ and 1,6,9,14‐positions respectively) of teyrrylenediimides are reported. A detailed study about the impact of the diverse functionalization topologies on the optoelectronic properties, self‐organization from solution, solid‐state packing, and charge carrier transport in field‐effect transistors is presented. The ortho‐substitution preserves the planarity of the core and favors high order in solution processed films. However, the strong intermolecular interactions lead to a microstructure with large aggregates and pronounced grain boundaries which lower the charge carrier transport in transistors. In contrast, the well‐soluble bay‐functionalized terrylenediimide forms only disordered films which surprisingly result in n‐type average mobilities of 0.17 cm2/Vs after drop‐casting with similar values in air. Processing by solvent vapor diffusion enhances the transport to 0.65 cm2/Vs by slight improvement of the order and surface arrangement of the molecules. This mobility is comparable to highest n‐type conductivities measured for solution processed PDI derivatives demonstrating the high potential of TDI‐based semiconductors.  相似文献   

5.
Micro‐ and nanostructuring of conjugated polymers are of critical importance in the fabrication of molecular electronic devices as well as photonic and bandgap materials. The present report delineates the single‐step self‐organization of highly ordered structures of functionalized poly(p‐phenylene)s without the aid of either a controlled environment or expensive fabrication methodologies. Microporous films of these polymers, with a honeycomb pattern, were prepared by direct spreading of the dilute polymer solution on various substrates, such as glass, quartz, silicon wafer, indium tin oxide, gold‐coated mica, and water, under ambient conditions. The polymeric film obtained from C12PPPOH comprises highly periodic, defect‐free structures with blue‐light‐emitting properties. It is expected that such microstructured, conjugated polymeric films will have interesting applications in photonic and optoelectronic devices. The ability of the polymer to template the facile micropatterning of nanomaterials gives rise to hybrid films with very good spatial dispersion of the carbon nanotubes.  相似文献   

6.
Induced circular dichroism (CD) spectra of the m‐diethynylbenzene macrocycles (S)‐ 2 and (R)‐ 2 that have exoannular chiral side chains are observed in a methanol/chloroform (8:2) solution, indicating the formation of chiral, helical aggregates in solution. Solid films prepared on the surface of quartz substrates by spin‐coating solutions of (S)‐ 2 also exhibit CD signals that are remarkably dependent on the solvent used for the spin‐coating. The relationship between the CD spectra and the morphology of the solid films observed by atomic force microscopy is discussed.  相似文献   

7.
A series of indolo[3,2‐b]indole (IDID) derivatives comprising the core unit of N,N‐dihexyl‐IDID with different aromatic and aliphatic substituents at 2‐ and 7‐position are designed and synthesized to construct high‐performance organic semiconductors by different processing routes. Structure‐property relationship of the derivatives is comprehensively studied in terms of their photophysical, electrochemical, structural, and electrical characteristics. IDID derivatives are either evaporated in vacuum or dissolved in common organic solvents to ensure applicalbility in different processing routes toward outstanding p‐type semiconductor films. Among others, the excellently soluble compound 4H4TIDID (with 2‐ and 7‐substituents of 5‐hexyl‐2,2′‐bithiophene moiety, solubility >20 wt% in chloroform), shows the highest field‐effect hole mobility of 0.97 cm2 V?1 s?1 in a device constructed by vacuum‐deposition and 0.18 cm2 V?1 s?1 in device cosntructed by spin‐coating, respectively. The 2D grazing incidence X‐ray diffraction of 4H4TIDID films in both devices identically show the 2D molecular orientation favorable for the high transistor mobility.  相似文献   

8.
Solution‐processed metal‐oxide thin films based on high dielectric constant (k) materials have been extensively studied for use in low‐cost and high‐performance thin‐film transistors (TFTs). Here, scandium oxide (ScOx) is fabricated as a TFT dielectric with excellent electrical properties using a novel water‐inducement method. The thin films are annealed at various temperatures and characterized by using X‐ray diffraction, atomic‐force microscopy, X‐ray photoelectron spectroscopy, optical spectroscopy, and a series of electrical measurements. The optimized ScOx thin film exhibits a low‐leakage current density of 0.2 nA cm?2 at 2 MV cm?1, a large areal capacitance of 460 nF cm?2 at 20 Hz and a permittivity of 12.1. To verify the possible applications of ScOx thin films as the gate dielectric in complementary metal oxide semiconductor (CMOS) electronics, they were integrated in both n‐type InZnO (IZO) and p‐type CuO TFTs for testing. The water‐induced full oxide IZO/ScOx TFTs exhibit an excellent performance, including a high electron mobility of 27.7 cm2 V?1 s?1, a large current ratio (Ion/Ioff) of 2.7 × 107 and high stability. Moreover, as far as we know it is the first time that solution‐processed p‐type oxide TFTs based on a high‐k dielectric are achieved. The as‐fabricated p‐type CuO/ScOx TFTs exhibit a large Ion/Ioff of around 105 and a hole mobility of 0.8 cm2 V?1 at an operating voltage of 3 V. To the best of our knowledge, these electrical parameters are among the highest performances for solution‐processed p‐type TFTs, which represents a great step towards the achievement of low‐cost, all‐oxide, and low‐power consumption CMOS logics.  相似文献   

9.
Double stimuli‐responsive membranes are prepared by modification of pH‐sensitive integral asymmetric polystyrene‐b‐poly(4‐vinylpyridine) (PS‐b‐P4VP) diblock copolymer membranes with temperature‐responsive poly(N‐isopropylacrylamide) (pNIPAM) by a surface linking reaction. PS‐b‐P4VP membranes are first functionalized with a mild mussel‐inspired polydopamine coating and then reacted via Michael addition with an amine‐terminated pNIPAM‐NH2 under slightly basic conditions. The membranes are thoroughly characterized by nuclear magnetic resonance (1H‐NMR), Fourier transform infrared spectroscopy and X‐ray‐induced photoelectron spectroscopy. Additionally dynamic contact angle measurements are performed comparing the sinking rate of water droplets at different temperatures. The pH‐ and thermo‐double sensitivities of the modified membranes are proven by determining the water flux under different temperature and pH conditions.  相似文献   

10.
Periodic mesoporous organosilica (PMO) thin films have been produced using an evaporation‐induced self‐assembly (EISA) spin‐coating procedure and a cationic surfactant template. The precursors are silsesquioxanes of the type (C2H5O)3Si–R–Si(OC2H5)3 or R′–[Si(OC2H5)3]3 with R = methene (–CH2–), ethylene (–C2H2–), ethene (–C2H4–), 1,4‐phenylene (C6H4), and R′ = 1,3,5‐phenylene (C6H3). The surfactant is successfully removed by solvent extraction or calcination without any significant Si–C bond cleavage of the organic bridging groups R and R′ within the channel walls. The materials have been characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), powder X‐ray diffraction (PXRD), and 29Si and 13C magic‐angle spinning (MAS) NMR spectroscopy. The d‐spacing of the PMOs is found to be a function of R. Nanoindentation measurements reveal increased mechanical strength and stiffness for the PMOs with R = CH2 and C2H4 compared to silica. Films with different organic‐group content have been prepared using mixtures of silsesquioxane and tetramethylorthosilicate (TMOS) precursors. The dielectric constant (k) is found to decrease with organic content, and values as low as 1.8 have been measured for films thermally treated to cause a “self‐hydrophobizing” bridging‐to‐terminal transformation of the methene to methyl groups with concomitant loss of silanols. Increasing the organic content and thermal treatment also increases the resistance to moisture adsorption in 60 and 80 %‐relative‐humidity (RH) environments. Methene PMO films treated at 500 °C are found to be practically unchanged after five days exposure to 80 % RH. These low dielectric constants, plus the good thermal and mechanical stability and the hydrophobicity suggest the potential utility of these films as low‐k layers in microelectronics.  相似文献   

11.
The ultrafast deprotonation of 2‐(2′‐hydroxyphenyl)benzothiazole (HBT) hosted in nanometer‐sized FAU and MFI zeolites is reported. Samples are prepared via in‐situ incorporation of HBT in the precursor colloidal solutions resulting in the formation of nanometer‐sized zeolites under hydrothermal treatment. The diameter of the zeolite particles formed in the crystalline suspensions is determined by dynamic light scattering and high‐resolution transmission microscopy to lie in the range 40–100 nm. It is shown that the HBT loading does not influence the degree of the zeolite crystallinity but does change the size and the morphology of the individual zeolite nanoparticles. Colloidal suspensions containing the crystalline nanoparticles are well suited for optical investigations since they are sufficiently transparent and clear. The photochemical properties of the HBT guest in the zeolite‐host systems are studied with femtosecond transient transmission spectroscopy. Depending on the acid–base properties either the enol or the keto tautomer of HBT is found to be hosted in the internal voids of the zeolites; upon UV excitation, the HBT‐keto tautomer is converted to the enol form in both MFI‐ and FAU‐type hosts. The HBT photoconversion takes place via an ultrafast deprotonation within 1.5 ps as detected by femtosecond transient absorption spectroscopy.  相似文献   

12.
Hierarchical FAU‐ and LTA‐type catalysts are prepared by post‐synthetic modifications and evaluated in the base‐catalyzed Knoevenagel condensation of benzaldehyde with malononitrile. A novel route to attain mesoporous Al‐rich zeolites (A and X) is demonstrated, while mesoporous Y and USY zeolites are prepared using recently developed methods. Base functionality is introduced by alkali ion exchange (Cs, Na) or by high‐temperature nitridation in ammonia. A thorough characterization of the zeolites' structure, composition, porosity, morphology, and basicity demonstrates that the presence of a secondary mesopore network enhances the ion‐exchange efficiency and the structural incorporation of nitrogen. The modified USY zeolites display twice the conversion, while the hierarchical A, X, and Y are up to 10 times more active based on the enhanced accessibility. These results demonstrate that the Knoevenagel condensation takes place predominately at the external surface, highlighting secondary porosity as a key criterion in the design of basic zeolite catalysts.  相似文献   

13.
Membranes with outstanding performance that are applicable in harsh environments are needed to broaden the current range of organic dehydration applications using pervaporation. Here, well‐intergrown UiO‐66 metal‐organic framework membranes fabricated on prestructured yttria‐stabilized zirconia hollow fibers are reported via controlled solvothermal synthesis. On the basis of the adsorption–diffusion mechanism, the membranes provide a very high flux of up to ca. 6.0 kg m?2 h?1 and excellent separation factor (>45 000) for separating water from i ‐butanol (next‐generation biofuel), furfural (promising biochemical), and tetrahydrofuran (typical organic). This performance, in terms of separation factor, is one to two orders of magnitude higher than that of commercially available polymeric and silica membranes with equivalent flux. It is comparable to the performance of commercial zeolite NaA membranes. Additionally, the membrane remains robust during a pervaporation stability test (≈300 h), including exposure to harsh environments (e.g., boiling benzene, boiling water, and sulfuric acid) where some commercial membranes (e.g., zeolite NaA membranes) cannot survive.  相似文献   

14.
Aiming for highly efficient blue electroluminescence, we have designed and synthesized a novel class of tetraphenylimidazole‐ based excited‐state intramolecular proton‐transfer (ESIPT) molecules with covalently linked charge‐transporting functional groups (carbazole‐ and oxadiazole‐functionalized hydroxyl‐substituted tetraphenylimidazole (HPI), i.e., HPI‐Cbz and HPI‐Oxd, respectively). High Tg (ca. 130 °C) amorphous films of HPI‐Cbz and HPI‐Oxd showed intense and ideal blue‐light emission (λmax = 462 and 468 nm, ΦPL = 0.44 and 0.38) with a large Stokes shift of over 160 nm and a narrow full width at half‐maximum of less than 65 nm. Organic light‐emitting devices using HPI‐Cbz and HPI‐Oxd as the emitting layer generated an efficient blue electroluminescence (EL) emission peaking at around 460 nm with excellent CIE coordinates of (x, y) = (0.15, 0.11). A maximum external quantum efficiency of 2.94%, and a maximum brightness of 1 229 cd m−2 at 100 mA cm−2, as well as a low turn‐on voltage of 4.8 V were achieved in this work.  相似文献   

15.
Novel fluorene‐based compounds, TCPC‐6 and TCPC‐4, with rigid central spirobifluorene cores and peripheral carbazole groups are synthesized using the Suzuki coupling reaction. The optical, electrochemical, and thermal properties of these compounds are characterized. The compounds show strong deep‐blue emission both in solution and as thin films. Both TCPC‐6 and TCPC‐4 exhibit amorphous morphologies in the solid state with high glass transition temperatures (Tg) of 108 and 143 °C, respectively. Atomic force microscopy (AFM) measurements indicate that high‐quality amorphous films of these novel compounds can be prepared by spin‐coating. The oxidation potentials of TCPC‐6 and TCPC‐4 are significant lower than that of model compounds without peripheral carbazole groups, which suggests that these compounds have relatively high highest occupied molecular orbital (HOMO) energy levels and better hole‐injection capabilities. Light‐emitting devices fabricated by spin‐coating films of these molecules exhibit deep‐blue emission with Commission Internationale de l'Eclairage (CIE) chromaticity coordinates (x, y) of (0.16, 0.05); the devices fabricated using spin‐coated TCPC‐6 and TCPC‐4 layers exhibit high luminance efficiencies of 1.35 and 0.90 cd A–1 (with external quantum efficiencies of 3.72 and 2.47 %), respectively.  相似文献   

16.
Multifunctional reactive‐zeolite‐based micromotors have been developed and characterized toward effective and rapid elimination of chemical and biological threats. The incorporation of silver ions (Ag+) into aluminosilicate zeolite framework imparts several attractive functions, including strong binding to chemical warfare agents (CWA) followed by effective degradation, and enhanced antibacterial activity. The new zeolite‐micromotors protocol thus combines the remarkable adsorption capacity of zeolites and the efficient catalytic properties of the reactive Ag+ ions with the autonomous movement of the zeolite micromotors for an accelerated detoxification of CWA. Furthermore, the high antibacterial activity of Ag+ along with the rapid micromotor movement enhances the contact between bacteria and reactive Ag+, leading to a powerful “on‐the‐fly” bacteria killing capacity. These attractive adsorptive/catalytic features of the self‐propelled zeolite micromotors eliminate secondary environmental contamination compared to adsorptive micromotors. The distinct cubic geometry of the zeolite micromotors leads to enhanced bubble generation and faster movement, in unique movement trajectories, which increases the fluid convection and highly efficient detoxification of CWA and killing of bacteria. The attractive capabilities of these zeolite micromotors will pave the way for their diverse applications in defense, environmental and biomedical applications in more economical and sustainable manner.  相似文献   

17.
The fabrication of robust biomolecule microarrays by reactive microcontact printing (μCP) on spin‐coated thin films of poly(N‐hydroxysuccinimidyl methacrylate) (PNHSMA) on oxidized silicon and glass is described. The approach combines the advantages of activated polymer thin films as coupling layers, characterized by high reactivity and high molecular loading, with the versatility and flexibility of soft lithography. The transfer of amino end‐functionalized poly(ethylene glycol) (PEG) from oxidized poly(dimethylsiloxane) elastomer stamps to PNHSMA films is shown by Fourier transform infrared spectroscopy, X‐ray photoelectron spectroscopy, fluorescence microscopy, and ellipsometry measurements to result in covalent coupling and identical grafting densities, as found previously for coupling from solution. The PEG‐protected areas effectively inhibit the adsorption of fluoresceinamine, bovine serum albumin, as well as 25‐mer DNA, while the unreacted N‐hydroxysuccinimidyl methacrylate ester groups retain their reactivity towards primary amino groups. Biomolecule microarrays have been thus conveniently fabricated in a two‐step procedure. The hybridization of target DNA to immobilized probe DNA in micropatterns proves the concept of reactive μCP on activated polymer films for obtaining robust platforms for biomolecule immobilization and screening.  相似文献   

18.
Spherical, micrometer‐sized particles with a layered structure were obtained by precipitation of a Silicalite‐1 zeolite nanoslab suspension upon addition of cetyltrimethylammonium bromide (CTMABr) and subsequent calcination. The material had a specific micropore volume of 0.69 cm3 g–1, distributed over super‐ and ultra‐micropores. The formation process of this peculiar microporous solid was studied using X‐ray diffraction (XRD), 29Si MAS NMR spectroscopy, thermogravimetry (TG), and nitrogen adsorption. In the precipitate, the Silicalite‐1 nanoslabs were laterally fused into nanoplates and stapled into layers with intercalated surfactant molecules. Removal of the surfactant through calcination caused facial fusion, besides additional lateral fusion, of the nanoplates. Empty spaces left lying laterally between individual nanoplates were responsible for the super‐microporosity. The ultra‐micropores were zeolitic channels inside the fused nanoplates. The potential of these Silicalite‐1 zeogrids as molecular sieves was demonstrated with pulse gas‐chromatographic separation of alkane mixtures. The mass‐transfer resistance of a packed bed of zeogrid particles was considerably lower than of compacted zeolite powder.  相似文献   

19.
High‐performance, air‐stable, p‐channel WSe2 top‐gate field‐effect transistors (FETs) using a bilayer gate dielectric composed of high‐ and low‐k dielectrics are reported. Using only a high‐k Al2O3 as the top‐gate dielectric generally degrades the electrical properties of p‐channel WSe2, therefore, a thin fluoropolymer (Cytop) as a buffer layer to protect the 2D channel from high‐k oxide forming is deposited. As a result, a top‐gate‐patterned 2D WSe2 FET is realized. The top‐gate p‐channel WSe2 FET demonstrates a high hole mobility of 100 cm2­ V?1 s?1 and a ION/IOFF ratio > 107 at low gate voltages (VGS ca. ?4 V) and a drain voltage (VDS) of ?1 V on a glass substrate. Furthermore, the top‐gate FET shows a very good stability in ambient air with a relative humidity of 45% for 7 days after device fabrication. Our approach of creating a high‐k oxide/low‐k organic bilayer dielectric is advantageous over single‐layer high‐k dielectrics for top‐gate p‐channel WSe2 FETs, which will lead the way toward future electronic nanodevices and their integration.  相似文献   

20.
2D materials are promising to overcome the scaling limit of Si field‐effect transistors (FETs). However, the insulator/2D channel interface severely degrades the performance of 2D FETs, and the origin of the degradation remains largely unexplored. Here, the full energy spectra of the interface state densities (Dit) are presented for both n‐ and p‐ MoS2 FETs, based on the comprehensive and systematic studies, i.e., full rage of channel thickness and various gate stack structures with h‐BN as well as high‐k oxides. For n‐MoS2, Dit around the mid‐gap is drastically reduced to 5 × 1011 cm?2 eV?1 for the heterostructure FET with h‐BN from 5 × 1012 cm?2 eV?1 for the high‐k top‐gate. On the other hand, Dit remains high, ≈ 1013 cm?2 eV?1, even for the heterostructure FET for p‐MoS2. The systematic study elucidates that the strain induced externally through the substrate surface roughness and high‐k deposition process is the origin for the interface degradation on conduction band side, while sulfur‐vacancy‐induced defect states dominate the interface degradation on valance band side. The present understanding of the interface properties provides the key to further improving the performance of 2D FETs.  相似文献   

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