光互联网与IP over DWDM技术的演进

探讨了光互联网的支撑技术和演进策略,分析了IP over DWDM等关键支撑技术的难点与发展趋势。首先,比较分析了若干种典型的网络层次模型及其性能,指出IP over DWDM是实现未来宽带互联网的关键支撑技术;其次,分析了IP over DWDM的技术难点,指出全光信号处理和多协议标签交换技术是实现IP over DWDM的重要手段,并预言了在相关技术成熟后,光分组网技术将进一步推动光互联网的发展。     

IP over DWDM—新一代的因特网

未来网络的数据平台趋于IP化，传输平台趋于DWDM化，故IP over DWDM必将成为新一代因特网的支柱。简要论述IP over DWDM技术及其特点，并指出了该技术面临的主要挑战：一是网络必须稳定可靠；二是要解决服务质量保障及链路管理问题等。概要介绍了光因特网的组成及优点；最后指出IP over DWDM适用于未来的城域网、高容量普遍IP业务和未来大型IP骨干网的核心汇接，是支撑未来光因特网的核心技术。     

未来公用网络中的光互连网

介绍一种应用于未来公用网络中的光互连网 ,它采用 IP over DWDM技术 ,通过 ATM和SONET层的消除降低了成本和管理复杂性。文中首先介绍 IP over DWDM方案 ,然后介绍 IP overDWDM的支持技术—— DWDM的发展状况和因特网业务特征。并介绍 SONET层消除出现的问题及解决方法 ,以及所带来的支路分离的成本节约。最后展望了 IP over DWDM技术的应用前景。     

IP over DWDM光互联网技术分析

首先简要介绍了IP over DWDM技术的基本原理及其主要器件，接着探讨了IP over DWDM技术的应用方案和特点，最后详细分析了支撑IP over DWDM的关键技术。     

IP over DWDM接入网

在接入网中IP over DWDM技术能充分利用IP和DWDM（密集波分复用）两者的优点，满足未来通信发展的需求，文中讨论了IP over DWDM接入网的结构，分配网络以及接入节点的组成和功能，并分析了接入网的重构算法及高层体系结构等关键技术。     

光互联网的关键器件

光互联网是指IP over WDM网，是未来网络的发展方向。本着重介绍了光互联网中的关键器件及其发展现状，包括光放大器、光转发器、光分插复用器、光交叉连接器、光开关、交换路由器。     

光突发交换关键技术

因特网流量呈指数增长，到2005年时，有望达到话音流量的10倍。这种形势，促使研究们加快对波分复用(WDM)传输和光交换技术深入研究，以便适应因特网流量的爆炸式增长、业务的多样性和业务突发性。考虑到IP网络的发展趋势和光技术的先进性，下一代因特网必然是以WDM网络为基础、以因特网业务流量为主的优化IP光网络(即IP over DWDM)。     

支持QoS的光突发交换业务分类与控制

光突发交换(OBS)技术是IP over DWDM的一种实现形式,研究了如何在OBS网络中的边缘节点对业务分类并合理控制一些参数以便让OBS层支持更好的QoS服务。     

城域网中IP over DWDM的应用及发展

本文系统地阐述了IP over DWDM的分层模型、关键技术，并对IP over DWDM技术在城域网中的应用和发展前景进行了介绍。     

IP over DWDM光区域接入网络

本文介绍了基于IP over DWDM的光区域接入网络、IP路由器及波长路由 ／ 转发器的概念，重点讨论了光区域接入网络的物理构成结构、接入节点的功能结构和网络连接等，指出这种结构是新电信运营公司的发展方向。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.