复杂电子系统的故障跟踪算法

本文提出一种基于相空间重构和故障跟踪算法的复杂电子系统故障诊断方法，该方法将复杂电子系统中参数变异演化造成的不稳定因素作为跟踪对象，并将其视为隐藏在“快变”系统状态矢量中的“慢变”状态矢量，利用相空间重构和局部线性化模型以及无故障系统的观测数据构造用于故障跟踪的参考模型，用数据替代法生成系统故障数据，借助于对系统状态矢量在相空间演化过程中相对参考模型误差的跟踪与估计，实现系统故障的检测与识别。混沌时间序列的相空间重构采用了复自相关和Г-test的嵌入维、时间延迟联合算法，所得到的结果为准最佳的嵌入维、时间延迟。实验结果表明，该故障诊断方法可准确地检测出复杂电子系统中的故障现象。     

基于序贯博弈多智能体强化学习的综合模块化航空电子系统重构方法

动态重构是一种有效的综合模块化航空电子系统故障容错方法.重构蓝图定义了系统故障环境下的应用迁移与资源重配置方案,是以最小代价重构恢复系统功能的关键.在复杂多级关联故障模式下,如何快速自动生成有效重构蓝图是其难点.针对该问题,本文提出一种基于序贯博弈多智能体强化学习的综合模块化航空电子系统重构方法.该方法引入序贯博弈模型...     

基于多信号模型的电子装备测试性分析

对于复杂的电子装备来说,有效的测试性分析有利于提高装备测试效果。运用TEAMS测试性分析工具,通过建立分层有向图表示系统属性的因果关系来建立系统故障传播特性的多信号模型,可高效地构建复杂电子装备的故障诊断模型,提高电子系统测试的故障隔离率和覆盖率。测试结果证明,多信号模型建模方法简单,诊断速度快,测试性评估效果好,可应用于复杂电子系统的测试性设计、故障模式影响、故障诊断和测试性评估等,满足现代复杂电子系统的故障诊断需求。     

基于混沌时间序列和神经网络的网络流量预测方法

网络流量时间序列具有复杂的非线性和不确定性特征,故提出以相空间重构理论与递归神经网络相结合的网络流量预测方法。以相空间重构理论确定最佳延迟时间和最小嵌入雏数,重构网络流量时间序列。将重构后的时间序列运用递归神经网络来训练,得到合适的模型,并用于网络节点中网络流量的预测。将该方法应用于实际数据预测,其结果与传统的时间序列预测方法结果相比较,提高了预测精度和稳定性,证明了该预测模型和方法在实际时间序列预测领域的有效性和实用性。     

基于混沌系统的心电图信号分类检测方法

混沌系统在通信系统和类周期弱信号检测中有着广泛应用,但在复杂信号的检测中应用并不多。一种用于检测心电图信号的混沌系统和Simulink模型被给出,实验仿真结果表明通过分析比较几种典型ECG信号通过系统后的输出相图的差异可以对心电图信号进行直观检测。相空间重构结果表明通过对原始心电图信号及其对应的系统输出数据相空间重构得到的混沌特征参数进行分析比较,可以对心电图检测提供理论支持。     

语音信号相空间重构中嵌人维数的选择

嵌入维是时间序列相空间重构中的基本参数。本文基于增大重构维以减少虚邻点的思想,构造了一种求合适最小嵌入维的方法。文章详细讨论了本方法的原理,给出了具体的算法构造,分析了算法性能,比较了本方法与已有同类方法的不同。用本方法,除可得到适合的最小嵌入维外,还可评估重构数据中所含的噪声强弱。并得到重构质量评价。将本方法应用于语音信号相空间重构,得到了语音信号一般情况下的嵌入维数。     

基于小波包的故障信号特征提取的研究

讨论了交--交变频调速系统故障诊断的重要性,在当前的检测方法与故障诊断手段研究的基础上,提出了一种改进的小波包算法,并运用该算法对变频调速系统输出电流进行分析.该算法的计算量和占用的存储空间较标准的小波包算法均减少80%.同时,运用基于改进的小波包的频带能量法提取变频调速系统的故障特征,分析了小波包分解层次对特征量提取的影响.经过仿真证明,该方法适用于变频调速系统故障信号的特征量提取.     

奇异数据的检测与处理

文章给出了奇异数据的随机模型检测与处理方法,该方法在处理线性数据时具有很好的效果,但对于处理非线性数据却效果不佳。为了解决非线性数据中的野点检测问题,该文结合相空间重构理论提出了一种基于核映射的野点检测方法,并将之应用于时间序列中。仿真实验表明了该方法的可行性和有效性。     

一种复杂噪声环境下的机电系统故障在线监测声学处理方法

针对复杂背景噪声环境下的机电系统故障检测问题,文中提出了一种基于宽带声学处理的噪声抑制和故障监测方法。该方法以声学信号拾取和处理为出发点,通过对机电设备正常运行状态下声学信号进行采集、数据跟踪和复杂背景噪声抑制,建立系统正常运行状态声纹库,并进一步通过基于宽带声学处理的声纹信号匹配和模式识别技术来实现故障信号的检测与分类,进而实现对机电系统运行状态的在线监测和隐形故障的自主预警。该处理方法将基于数据跟踪的自相关噪声抑制技术与基于宽带声学处理的故障信号检测以及分类判型技术有机结合,可对机电系统早期隐性故障进行监测,有效解决了复杂噪声环境下的机电系统故障检测问题。仿真实验也证明了该处理方法的有效性和良好的实用性。     

基于DSP和小波变换故障诊断检测的研究

讨论了交-交变频调速系统故障诊断的重要性,在当前的检测方法研究的基础上,提出了基于DSP和小波分析的变频调速系统故障检测方法,建立了故障诊断系统;充分利用了DSP强大的数据处理功能,以及小波分析所具有的对非平稳信号的分析处理能力;实验证明该方法适用于变频调速系统的故障诊断。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.