Functionalized KIT‐6/Terpolyimide composites with ultra‐low dielectric constant

Polyimides with low dielectric constants are important raw materials for the fabrication of flexible printed circuit boards and other microelectronic applications. As creation of voids in polyimide matrix could decrease dielectric constant, in this study mesoporous KIT‐6, synthesized hydrothermally, was functionalized with 3‐aminopropyltriethoxysilane (APTS) and mixed with 4,4′‐oxydianiline (ODA) in the synthesis of terpoly(amic acid) using 3,3′,4,4′‐biphenyldianhydride (BPDA), 3,3′,4,4′‐oxydiphthalic dianhydride (ODPA) and 3,3′,4,4′‐benzophenonetetracarboxylic dianhydride (BTDA) and subsequently stage‐cured to obtain APTS‐KIT‐6/Terpolyimide composites (APTS‐KIT‐6/TPI). The asymmetric and symmetric vibrations of imide O?C? N? C?O groups of APTS‐KIT‐6/TPI composites showed their peaks at 1772 and 1713 cm^?1. The dielectric constant decreased with the increase in KIT‐6 loading from 2 to 4%, but increased at higher loadings, and at 4% loading it was 1.42. Its tensile strength (103 MPa), tensile modulus (2.5 GPa), and percentage elongation (8.2) and high thermal stability (>540°C) were also adequate for application in microelectronics such as flexible printed circuits. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014 , 131, 40508.     

Design and preparation of poly(aryl ether ketone)/phosphotungstic acid hybrid films with low dielectric constant

A material with low dielectric constant was produced using nanoparticle phosphotungstic acid (PWA) modified by the silane coupling agent γ‐aminopropyltriethoxysilane (KH‐550) dispersed in a poly(aryl ether ketone) containing (3‐trifluoromethyl) phenyl side groups (FPEEK) matrix synthesized with (3‐trifluoromethyl) phenyl hydroquinone (3FHQ) and 4,4′‐difluorobenzophenone. The material was fabricated using solution‐blending. Moreover, the dielectric, thermal, and mechanical properties of this material were characterized using a precision impedance analyzer, thermal gravimetric analyzer, and universal tester, respectively. The results indicate that modified PWA (m‐PWA)/FPEEK composites show obvious improvement in the dielectric properties compared to unmodified PWA (p‐PWA)/FPEEK composites. This should be attributed to the good dispersion and compatibility of m‐PWA in FPEEK, as proven by scanning electron microscope and wide‐angle X‐ray diffraction. Besides, m‐PWA/FPEEK composites also exhibited the relatively good thermal and mechanical properties. © 2013 Wiley Periodicals, Inc. J. Appl. Polym. Sci., 2013     

Inclusion of covalent triazine framework into fluorinated polyimides to obtain composites with low dielectric constant

Polyimides possess good mechanical properties, favorable dielectric properties, and chemical inertness, which enabled them to find applications in microelectronic industries. The dielectric constant of the polyimides varies between 2.5 and 4, which is rather high for such applications. Hence, synthesizing polyimides with still lower dielectric constant has become one of the critical research confronts. As the properties of a terpolyimides (TPI) could be altered as per the requirement, it was synthesized by combining the dianhydrides 3,3′,4,4′-biphenyldianhydride, 3,3′,4,4′-oxydiphthalicdianhydride, and 4,4′-(hexafluoroisopropylidene) with a diamine 4,4′-(hexafluoroisopropylidene)dianiline or 2,2-bis[4-(4-amino phenoxy)phenyl]hexafluoropropane. As porous covalent triazine framework (CTF-1) is capable of capturing much air within its pores and interfacial voids, it was combined with the TPI matrix in different loadings to obtain CTF-1/TPI composite films with low dielectric constant. The composites exhibited high thermal stability, as their thermal decomposition occurred above 520°C. The tensile properties and the dielectric constant of the composites declined with the raise in CTF-1 loading up to 4%. The decrease in dielectric constant is essentially due to the incorporation of air voids (dielectric constant of air ~1) in the TPI matrix due to the inclusion of porous CTF-1.     

Novel positive‐type photosensitive polyimide with low dielectric constant

A novel positive‐type photosensitive polyimide (PSPI) with a low dielectric constant was developed. The PSPI system was composed of soluble block PI (Bco‐PI) with a hydroxy group and diazonaphthoquinone as a photoreactive compound. The base Bco‐PI was prepared by a direct one‐pot polycondensation of 2,2‐bis(3‐amino‐4‐hydroxy‐phenylhexafluoropropane), 2,2‐bis[4‐(4‐aminophenoxy)phenyl]hexafluoropropane, and cyclohexanetetracarboxylic dianhydride in the presence of a γ‐valerolactone and pyridine catalyst system using N‐methyl‐2‐pyrrolidone as the solvent. The film of Bco‐PI was colorless and transparent, both important factors for a PSPI. Photosensitive soluble block PI (Bco‐PI), containing 20 wt % ester of 2,3,4‐trihydroxybenzophenone with 1,2‐naphthoquinone‐(2)‐diazide‐5‐sulfonic acid (NT200), showed a sensitivity of 350 mJ/cm² and a contrast of 1.20 when it was exposed to UV light, followed by development with 5% tetramethylammonium hydroxide aqueous solution at room temperature. The estimated optical dielectric constants of the PIs with and without NT200 were 2.68 and 2.75, respectively. These values were significantly lower than those of conventional aromatic PIs, such as Kapton film (50EN). © 2005 Wiley Periodicals, Inc. J Appl Polym Sci 98: 15–21, 2005     

Preparation of high‐k composites with low dielectric loss based on the double‐layer coaxial structure of inorganic/polymer

This study presents a novel and simple modification of cladding multiwalled carbon nanotubes (MWCNTs) using organic polymer and inorganic nanoparticles to synthesize a product, which has a double‐cladding coaxial structure and can be applied as filler in the dielectric field. The first layer of MWCNTs was coated with polyaniline (PANI) through the oxidation–reduction reaction mechanism using Ce(NH₄)₂(NO₃)₆ as oxidizing agent and metal precursor of cerium oxide. Cerium ions on the second cladding layer of MWCNTs were directly deposited from the solution to the surface of the PANI layer forming the double‐cladding hybrid (CeO₂/PANI@MWCNTs). The external inorganic layer provides an insulating shell, which can prevent the contact between the conductive particles and hinder the migration of electrons between the MWCNTs. The intermediate layer of PANI provides the bonding between CeO₂ and the conductive core of MWCNTs, which also shows lower conductivity than carbon nanotubes. The CeO₂/PANI@MWCNTs were compounded with epoxy (EP) resin and formed a dielectric material with the advantage of reducing dielectric loss while ensuring high dielectric constant. The dielectric constant of the coated MWCNTs/EP composites was 194.90 at 10³ Hz with the content of fillers reaching 30 wt %, which is 28 times that of the pure EP. Accordingly, the dielectric loss of 30 wt % coated MWCNTs/EP composites was only 0.09 at 10³ Hz, which is only 2.25 times that of the pure EP. © 2018 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2018 , 135, 46299.     

Polyimide hollow glass microspheres composite films with low dielectric constant and excellent thermal performance

Nowadays, polyimide (PI) with low dielectric constant is expected to be widely applied in microelectronics. For this reason, hollow glass microspheres (HGM) modified by silane coupling agent KH-550 (K-HGM), a series of HGM/PI and K-HGM/PI composite films with excellent thermal performance, hydrophobic and low dielectric constant were fabricated by in situ polymerization. The effect of HGM/K-HGM content on the properties of composite films was studied. The superior heat resistance of HGM can improve the thermal performance of composite films. Due to silane coupling agent KH-550, K-HGM exhibits a good interfacial compatibility with PI matrix and forms an interfacial adhesion region. With the HGM loading of 6%, comparing with pure PI films, the glass transition temperatures (T_g) of composite films were dramatically increased by 32.3°C. Especially, the low dielectric constant of 2.21 and dielectric loss of 0.0059 at 1 MHz were obtained for the PI/K-HGM composite film with addition of 8 wt%. Thus, PI/K-HGM composite films show more excellent performance. The current work provides a promising solution for fabrication of PI with low dielectric constant and superior thermal performance that may be applied in microelectronics industry.     

High-performance PA1/TPU films with enhanced dielectric constant and low loss tangent

Polymer composites with high dielectric constant are promising materials for energy-storage application. However, their development has generally been hindered due to the challenge to balance dielectric constant and loss tangent. In this work, a novel thermoplastic polyurethane (TPU)-based composite with high dielectric constant and low loss tangent was prepared by inducing polyamide-1(PA1). The optimal content of PA1 in TPU matrix was 1.0 wt %. Importantly, the dielectric constant of TPU exhibited great stability at the frequency range of 10³–10⁶ Hz and increased sharply with the addition of PA1. In specific, the dielectric constant of TPU increased from 8 to 41 with the incorporation of 1.0 wt % PA1, which was five times higher than that of pure TPU. Meanwhile, the loss tangent still kept at a low level of less than 0.02. This work may provide a new direction for preparation of dielectric polymer composites with excellent comprehensive performance. © 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2020 , 137, 48469.     

Decisive role of mixed‐valence structure in colossal dielectric constant of LaFeO3

The role of mixed‐valence structure in colossal dielectric constant (CDC) behavior has been investigated in LaFeO₃ ceramics by tuning the ratio of Fe²⁺/Fe³⁺ through substituting Al for Fe. The ratio of Fe²⁺/Fe³⁺ is decreased gradually from 1.0 to 0.0 by increasing the concentration of Al³⁺. Two clear‐cut correlations have been found: (i) the relationship between the CDC behavior and the ratio of Fe²⁺/Fe³⁺ follows an exponential function and (ii) the activation energy of the polaron relaxation is proportional to , where is the intrinsic dielectric constant. These findings underscore the role of the mixed‐valence structure in CDC behavior and suggest that adjusting the mixed‐valence structure through doping/alloying can be a promising strategy to achieve superior CDC behavior in transition‐metal oxides.     

Revealing the correlation between molecular structure and dielectric properties of carbonyl-containing polyimide dielectrics

Polymer dielectrics with outstanding heat resistance and advanced dielectric properties are of great importance for high-temperature capacitors in the applications of hostile circumstances. In this work, a series of aromatic carbonyl-containing polyimides (CPI) are prepared from the carbonyl dianhydride and different diamines. The correlation between molecular structure (i.e., different linked structure (─O─, ─CH2─, ─SO2─) in diamines, the length of repeating unit and the linked position (para-para or meta-meta), and properties is revealed in detail to obtain CPI dielectrics with excellent thermal resistance (glass transition temperature, T_g: 241~352°C), reasonably high dielectric constant (3.99~5.23), low dissipation factor (0.00307~0.00395), and admirable breakdown strength (425~552 MV/m) simultaneously. Particularly, CPI-5 with carbonyl structure in dianhydride and sulfonyl group in diamine proves to exhibit discharged energy density and charge–discharge efficiency of 6.34 J/cm³ and 92.3% at 500 MV/m, respectively. In addition, CPI-5 also displays stable dielectric properties in temperature range of −50‑200°C. © 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019 , 136, 47883.     

Effect of POSS‐grafted titanium dioxide on the electrical and thermal properties of LDPE/TiO2 polymer nanocomposite

Two types of nanocomposites have been fabricated by a ball‐milling technique. The first type consists of untreated titanium dioxide (TiO₂) incorporated into low‐density polyethylene (LDPE). For the second one, TiO₂ filler chemically treated with trisilanol phenyl–polyhedral oligomeric silsesquioxane (TP–POSS) as compatibilizing agent was ball‐milled with LDPE. All specimens were tested by microstructure analysis and thermal, dielectric characterization techniques. Microstructure analysis by atomic force microscopy and scanning electron microscopy show clearly an increased dispersion in presence of POSS. Scanning electron microscopy even shows the formation of a particular structure due possibly to interactions between functionalization. It was observed that the modification of the surface of TiO₂ by the POSS decreased the dielectric loss. All nanocomposites containing treated TiO₂ revealed an improvement in thermal conductivity, with the most distinct value of 19% in case of LDPE containing 5 wt % treated TiO₂. The incorporation of TiO₂ fillers seems to reduce the dielectric breakdown strength of the nanocomposites. However, nanocomposites containing 3 and 5 wt % treated TiO₂ have exhibited a slightly enhancement in dielectric breakdown strength up to 5%. The improvement in surface resistance to partial discharge was found in all nanocomposites specimens, especially for both types of composite containing 7 wt % untreated and treated TiO₂. © 2017 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2018 , 135, 46095.     

Effect of microstructure on the dielectric properties of poly(vinyl alcohol)–poly(3,4‐ethylenedioxythiophene) doped with poly(styrenesulfonate) composite films

Poly(3,4‐ethylenedioxythiophene) doped with poly(styrenesulfonate) (PEDOT–PSS) was blended with poly(vinyl alcohol) (PVA) to form 0, 10, 20, 30, 40, and 50 vol % PEDOT–PSS/PVA solutions, and their freestanding films were prepared with a simple and cost‐effective solution casting technique at 27 °C in the absence of additives. Field emission scanning electron microscopy images revealed changes in the cocontinuous network to a rodlike morphology in the composite films from 10 to 50 vol % PEDOT–PSS/PVA. The alternating‐current conductivity was found to obey Jonscher's power law. The obtained values of the dielectric constant at 27 °C were relatively high, and a maximum value of 6.7 × 10⁴ at 100 Hz for 40 vol % PEDOT–PSS'/PVA was observed. The dielectric loss attained a maximum value of about 10⁶ at 100 Hz for 40 vol % PEDOT–PSS/PVA. However, a decrease in the dielectric parameters was observed at 50 vol % PEDOT–PSS/PVA because of locally induced strain in the microstructure. The variations in polarization with respect to the applied electric field (P–E) were determined for 50, 100, and 500 Hz at 500 V for the freestanding composite films of lower concentrations up to 20 vol % PEDOT–PSS/PVA. In summary, the dielectric and P–E measurements confirmed that the electrical characteristics changed in accordance to the contribution from both resistive and capacitive sites in the PEDOT–PSS/PVA composites. © 2017 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2017 , 134, 45079.     

Multifunctional epoxy resin/polyacrylonitrile‐lithium trifluoromethanesulfonate composites films with very high transparency,high dielectric permittivity,breakdown strength and mechanical properties

Multifunctional transparent composite films with high dielectric permittivity (high‐k), breakdown strength, and mechanical properties are urgently required by cutting‐edge fields. Herein, novel multifunctional films were facilely prepared through building unique cross‐linked structure based on epoxy resin (EP) and polyacrylonitrile (PAN)‐lithium trifluoromethane sulfonate (LiTf) complex. Compared with high‐k materials reported previously, EP/(PAN‐LiTf) films simultaneously show very high transparency, good flexibility, high tensile, and breakdown strengths. For 0.22EP/(PAN‐LiTf) film with 22 wt % EP, its average transmittance and elongation at break are as high as 91% (600–800 nm) and 12.7%, respectively; moreover, its dielectric permittivity, AC breakdown strength and the maximum energy density are severally about 4.9, 1.8, and 15.2 times of those of EP resin, completely overcoming the sticky problems in conductor/polymer composites. The origin behind these attractive properties is intensively discussed, and believed to be attributed to the unique structure of EP/(PAN‐LiTf) films. © 2017 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2017 , 134, 45218.     

Novel low‐dielectric‐constant copolyimide thin films composed with SiO2 hollow spheres

A series of copolyimide/SiO₂ hollow sphere thin films were prepared successfully based on bis[3,5‐dimethyl‐4‐(4‐aminophenoxy)phenyl]methane and 9,9‐bis(4‐(4‐aminophenoxy)phenyl)fluorene (molar ratio = 3 : 1) as diamine, and 4,4′‐(4,4′‐isopropylidenediphenoxy)bis(phthalic anhydride) as dianhydride, with different wt % SiO₂ hollow sphere powder with particle size 500 nm. Some films possessed excellent dielectric properties, with ultralow dielectric constants of 1.8 at 1 MHz. The structures and properties of the thin films were measured with Fourier transform infrared spectra, scanning electron microscope, thermogravimetric analysis, and dynamic mechanical thermal analysis. The polyimide (PI) films exhibited glass‐transition temperatures in the range of 209– 273°C and possessed initial thermal decomposition temperature reaching up to 413–477°C in air and 418–472°C in nitrogen. Meanwhile, the composite films were also exhibited good mechanical properties. © 2010 Wiley Periodicals, Inc. J Appl Polym Sci, 2011     

Core-shell structured BaTiO3@SiO2@PDA for high dielectric property nanocomposites with ultrahigh energy density

Flexible nanocomposite dielectrics with high dielectric constant and discharge energy density have broad application prospects in the field of energy storage. However, dielectrics with high dielectric constant tend to have a high dielectric loss. Herein, we prepared a dielectric composite material with ultra-high discharge energy density by modifying the interface between nanoparticles and poly(vinylidene fluoride-co-hexafluoropropylene) (P[VDF-HFP]). After coating a shell of insulating amorphous SiO₂ (~7 nm) outside the barium titanate (BT), the electric field concentration and current density inside BT particles can be significantly reduced. In addition, coating the SiO₂ shell with a polydopamine (PDA) shell (~7 nm) not only enhances the interface interaction between the nanoparticles and the polymer matrix, but also can form lots of microcapacitors in the composite. As a result, an ultra-high discharge energy density of 13.78 J/cm³ at the expense of relatively inconspicuous efficiency (~59.8%) in the BT@SiO₂@PDA/P (VDF-HFP) with 2.5 wt% loading has been achieved under 460 kV/mm. This is mainly attributed to the increases of dielectric constant from 12.1 to 14.2 and the relatively low dielectric loss (0.086) at 100 Hz. Moreover, compared with the pure P (VDF-HFP) (400 kV/mm), the breakdown voltage of the composite with 2.5 wt% loading is surged to 460 kV/mm, which benefited from the hindrance of nanoparticles on carrier migration at low content. This work has realized a thin-film dielectric with ultra-high discharge energy density through a novel design of the nanoparticle structure, providing a theoretical direction for the development of polymer dielectric capacitors.     

Silacyclobutane-functionalized cyclosiloxanes as photoactive precursors for high thermal stability,low dielectric constant and low dielectric loss polymers

Low dielectric photoactive materials have significant potential as components in future microelectronics. Although a number of photosensitive groups have been used to construct photopatternable materials, it remains challenging to introduce these groups into polymer chains via facile yet controlled polymerization techniques. The present work demonstrates the synthesis of a new class of photoactive cyclosiloxane monomers having hybrid siloxane-carbosilane main chains. These compounds can be cured by applying ultraviolet radiation and heat to promote the reaction of the silacyclobutene units and form hyper-cross-linked cyclosiloxanes. The cured resins show high thermal stability (with T_5% values in the range of 460–550°C), low dielectric constants (2.36–2.76 at 10 MHz) and low dielectric losses (10⁻³ at 10 MHz). Thus, these polymers could possibly be used as high-performance dielectric materials.     

Phosphorus‐containing polyhedral oligomeric silsesquioxane/polyimides hybrid materials with low dielectric constant and low coefficients of thermal expansion

Novel phosphorus‐containing polyhedral oligomeric silsesquioxane (POSS)/polyimides (PI) hybrid materials with low dielectric constant and low linear coefficients of thermal expansion (CTE) were prepared and characterized. The POSS/PI hybrid materials were synthesized with octa(aminopropyl)silsesquioxane (OAPS) and a series of phosphorus‐containing polyamide acids(PAA). The PAAs were synthesized with bis(4‐aminophenoxy) phenyl phosphine oxide (BAPPO), 4,4’‐diaminodiphenyl ether (ODA) and 3,3',4,4'‐biphenyl tetracarboxylic diandhydride (BPDA). The structures and properties of the hybrid materials were characterized. And the effect of the phosphorus‐containing structure on the POSS/PI hybrid materials was discussed. The dielectric constants and CTE of the hybrid materials were remarkably lower than that of the unmodified POSS/PI films. The lowest values of dielectric constant and CTE could achieve as low as 2.64 (1 MHz) and 27.45 ppm/K. Besides, the hybrid materials also had excellent thermal properties. The highest 5% weight loss temperature of the hybrid materials was as high as 580°C under air. © 2015 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015 , 132, 42611.     

Thermal behavior and dielectric property analysis of boron nitride‐filled bismaleimide‐triazine resin composites

Bismaleimide‐triazine (BT) resin/hexagonal boron nitride (h‐BN) composites are prepared, and the effects of h‐BN content on the thermal and dielectric properties are studied in the view of structure–property relationship. It is found that the introduction of the BN in the BT resin dramatically improve the thermal conductivity of BT resin. The thermal conductivity of the composites is up to 1.11 W/m.K, with an h‐BN concentration of 50 wt %, which is increased by six times compared with the pure BT resin. The BT resin/h‐BN composites also exhibit excellent thermal properties, with the glass transition temperatures above 200°C, and thermal decomposition temperatures over 390°C. Moreover, the composites possess good dielectric properties. Their dielectric constant and loss tangent (tan δ) are less than 4.5 and 0.015, respectively. The results indicate that the BT resin/h‐BN composites are promising as efficient heat‐releasing materials in the high‐density electronic packaging technology. © 2012 Wiley Periodicals, Inc. J. Appl. Polym. Sci., 2013     

Novel dielectric behaviors in PVDF‐based semiconductor composites

Composites of polyvinylidene fluoride (PVDF) filled with different conductive fillers as carbon black (CB), nickel (Ni), zinc (Zn), and tungsten (W), respectively, were prepared at same processing condition. The temperature dependence of dielectric behaviors of composites was studied at wide filler concentration and wide frequency ranges. Results show that there are giant dielectric constants as the concentration of filler is near the percolation threshold. The dielectric constants of all studied composites decrease slowly with increasing of frequency and rise gradually with increasing filler contents in the composites. Two relaxation peak regions of dielectric constant are observed from ?30 to 40°C and from 100 to 150°C, which can be attributed to the contribution of polar effect of PVDF. The CB filled PVDF (CB/PVDF) composites present a lower percolation threshold than other metallic‐filler filled PVDF composites. The maximal dielectric constant was found in the Ni filled PVDF (Ni/PVDF) composite. © 2011 Wiley Periodicals, Inc. J Appl Polym Sci, 2011     

Chitosan/MWCNTs‐decorated with silver nanoparticle composites: Dielectric and antibacterial characterization

The dielectric and biological properties of chitosan (CTS)‐based nanocomposites were analyzed by dielectric spectroscopy, and antibacterial and antifungal assays. Carbon nanotubes (CNT) and CNT decorated with silver nanoparticles (AgnP) were incorporated into a CTS matrix at different concentrations to obtain bionanocomposite thin films. The conductivity of pristine CTS is considerably enhanced, by six orders of magnitude, with the inclusion of CNT; however, with the addition of CNT decorated with AgnP it only increases by two orders of magnitude because of strong chemical interactions between the CNT and AgnP that also affect the antibacterial activity of the composite. The percolation threshold in the CTS/CNT composites is ca. 1.3 wt %, while in CTS/CNT‐AgnP composites the strong CNT‐AgnP chemical interactions give a percolation threshold of ca. 2.2 wt % of CNT‐AgnP. In both cases, DC conductivity exhibits a three‐dimensional hopping conductivity, and the σ‐ and α‐relaxation processes are disclosed in agreement with the pristine CTS relaxation processes previously reported; however, these two relaxations vanish in the vicinity of the saturation concentration. Finally, the antifungal activity of the CTS/CNT‐AgnP composites is comparable with the activity of other composites, while their antibacterial activity seems to be competitive with respect to commercial antibiotics, indicating the effectiveness of these composites in potential hygienic applications. © 2013 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014 , 131, 40214.     

Enhanced dielectric properties of PVDF nanocomposites with modified sandwich-like GO@PVP hybrids

ABSTRACT

Herein, graphene oxide (GO) nanosheets coated with insulated polyvinyl pyrrolidone (PVP) were integrated into poly(vinylidene fluoride) (PVDF) to investigate the effects of the insulating PVP shell, loading, and its reaction time on the dielectric properties of the nanocomposites. Compared with the pristine GO/PVDF, the GO@PVP/PVDF nanocomposites show an improvement of the filler dispersion, and significantly suppressed conductivity and loss. Activation energies of GO/PVDF and GO@PVP/PVDF nanocomposites are calculated as 1.247 eV and 0.435 eV, respectively, indicating that the presence of PVP layer on the GO surface reduces the relaxation activation energy and makes the relaxation occurrence at low temperatures.