阿魏菇多糖高产菌株筛选的离子束诱变和复合诱变对比研究

为筛选出阿魏菇菌丝体多糖高产菌株,本文进行了阿魏菇多糖高产菌株筛选的离子束诱变和复合诱变对比研究。尝试用打散的阿魏菇菌丝体为靶材,以离子束注入为诱变手段,通过营养缺陷型初筛和摇瓶发酵复筛,获得了2株阿魏菇多糖高产菌株PFPH-1和PFPH-2。其菌丝体多糖产量分别达到551．80mg,L和659．46mg／L,比出发菌株分别提高了46．55％和75．14％。再分别以PFPH．1和PFPH．2为出发菌株,用紫外线和氯化锂进行复合诱变处理,通过高通量初筛和摇瓶发酵复筛,结果发现,菌株1、9和10号比其出发菌株PFPH-1的多糖产量分别减少了27％、38％和37％;菌株17号比其出发菌株PFPH-2的多糖产量减少了28％。在本研究中,紫外线和氯化锂的复合诱变表现出了一定的负效应。     

氮离子束注入诱变选育胞外多糖高产菌株

采用氮离子束注入胞外多糖产生菌进行诱变处理来获得胞外多糖高产菌株。氮离子注入过程采用的能量为10 keV,剂量为60×1014–140×1014cm-2。根据其存活率及突变率确定最佳的注入剂量。结果表明:菌株存活率曲线遵循氮离子注入生物效应的"马鞍型曲线",当注入剂量为120×1014cm-2时,获得了最佳的诱变效果。通过筛选和连续5次传代,获得具有良好稳定性的突变株,其多糖产量达到3.29 g/L,较出发菌株提高了19.20%,且发酵周期缩短了6 h。     

离子注入诱变选育肌苷高产菌株

以肌苷产生菌——枯草芽孢杆菌（Bacillus subtilis HSD06）为出发菌株,经不同剂量的旷离子束注入处理,定向选育磺胺胍抗性提高的突变株。获得磺胺胍突变株的最佳照射剂量为3×10^15cm^2。从528个抗性提高的菌落中筛选获得B11和B13肌苷高产菌株,其摇瓶发酵水平肌苷产量为14．83g／L和14．38gm,分别比出发菌株提高了16．3％和12．8％。     

碳离子束对甜高粱辐射诱变的当代效应

利用兰州重离子加速器提供的中能碳离子束对甜高粱品种BJO601和BJO602进行了不同剂量的辐照处理,以期选育出生物学产量高、汁液糖锤度高及抗逆性强的品种.当代田间试验结果表明:(1)甜高粱在田间的存活曲线均呈"类马鞍型",随着剂量的增加,其存活率先降后升再下降;(2)随着辐照剂量的变化,其茎秆亩产量、糖锤度和对照相比,均发生了明显的变化;(3)经过碳离子束辐照,出现了株高、单秆重、糖锤度高、早熟、茎粗等突变类型,为进一步的品种选育和诱变机理研究奠定基础.     

重离子辐照柠檬酸菌株的诱变选育

应用不同剂量重离子束12C+6对黑曲霉出发菌株4﹟进行辐照选育,选育出的高产酸菌株进行发酵试验,应用酸碱中和法测定发酵液中柠檬酸的含量。结果表明:当重离子12C+6的辐照剂量为60 Gy时,正突变率最大,为21%。诱变后的菌株通过酸斑法初筛、摇瓶复筛选育出1株菌株H4002,其发酵液中柠檬酸含量比出发菌株4﹟提高了18%。这说明利用重离子束12C+6辐照处理黑曲霉产生菌可以得到高产柠檬酸突变菌株,其诱变效果显著。     

重离子束辐照选育高产植物乳酸菌

采用重离子束~(12)C~(6+)对乳酸菌出发菌株JTL进行辐照选育。确定吸收剂量300 Gy时最优,在该吸收剂量下,出发菌种的正突变率和致死率均达到最高,分别为34.4%、80%。通过酸斑法初筛和发酵复筛法,选育出高产酸的3株突变菌株(JTL2、JTL3、JTL5),其发酵液中乳酸含量比出发菌株JTL提高了41.29%~49.64%。同时,经过传代实验证实,3株菌株具有良好的遗传稳定性。研究表明,利用重离子束~(12)C~(6+)辐照处理乳酸菌可以得到高产酸的突变菌株,诱变效果显著。     

离子束辐照结合组织培养在植物诱变中的研究进展

简述了植物组织培养方法与离子束辐射相结合这一新诱变技术的研究进展,从原理、操作步骤、分子机理等诸方面对该方法进行了阐释.该诱变技术具备传统辐射诱变技术所不具备的优势,从而能够为利用无性繁殖技术进行后代繁衍的植物提供新的育种思路.与此同时,使用该方法还能够开展植物组织细胞的传能线密度(Linear energy transfer,LET)生物学效应的研究,从理论上及实践上进一步优化该技术.     

碳离子束辐射诱变水稻基因突变嵌合体的分子特征

嵌合体是辐射诱变M₁代普遍存在的现象,然而,有关水稻的嵌合体突变效应及变异遗传机制尚不清楚。本研究采用靶向捕获测序技术获得碳离子束辐照后的Os Nramp5突变嵌合体,并利用10 kb液相芯片检测该嵌合体的M₁代及突变M₂代基因组的SNP/In Del发生及变异遗传分离特征。结果表明：水稻M₁代嵌合体中检测到的Os Nramp5基因突变位点未遗传至M₂代,即在M₁代体细胞检测到的突变位点未进入生殖细胞遗传;另外,在M₁基因组突变类型中,转换是颠换的2倍,虽然超过一半变异位点遗传至M₂代,但很少位点来自基因功能编码区。本研究揭示了碳离子束辐照诱变的体细胞M₁代嵌合体的基因组变异特征及其在M₂代的遗传特征,为研究碳离子束辐照后的嵌合体突变效应机制和选择诱变育种程序提供参考。     

碳离子束辐照大豆当代诱变效应及褐皮突变体的初步研究

利用不同剂量碳离子束辐照大豆"合丰55"干种子,通过对表型、株高、分枝数及产量相关性状的考察以及DNA指纹图谱分析探索离子束辐照大豆的当代诱变效应。结果表明离子束诱变大豆M1代田间出现多种变异表型,辐照处理对M1代株高和分枝数有抑制作用,单株荚数、单株粒数、单株粒重及百粒重随着辐照剂量的增加呈现先降低后升高再降低的趋势,但这些变异与对照相比并未达到显著水平。大豆种子经辐照后M1代筛选到1株褐皮突变体,种皮颜色由黄色变为褐色,而且这种变异在M2代能够稳定遗传。运用随机扩增多态性(Random amplified polymorphic DNA,RAPD)技术对其DNA多态性进行研究发现,辐照后突变体DNA与对照相比扩增条带或增加或减少,相似性系数为0.9513。综合结果表明,碳离子束辐照对大豆当代产生了一定的诱变效应,不仅造成了农艺性状的变异,而且使DNA水平也发生了明显的变化。     

生防菌BJ1离子辐照突变高效菌株筛选及对黄瓜枯萎病的生防效果

枯草芽孢杆菌BJ1是一种在真菌病害防治中发挥重要作用的生防因子,为进一步提高它的抑菌能力,获得生防效果更好的高效菌种,利用不同能量和剂量的12C6+对生防菌BJ1进行了离子辐照处理。研究结果表明:离子辐照生防菌BJ1的最适宜剂量为200~400 Gy,传能线密度(LET)为60 keV/μm;突变菌株的抑菌能力比BJ1提高了2%~21%;不仅防病效果比BJ1提高了17.48%,而且对植物具有更好的促生长作用。     

Screening of Bioflocculant-Producing Strain by Ion Implantation and Flocculating Characteristics of Bioflocculants

A bioflocculant-producing mutator strain, NIM-192, was screened out through nitrogen ion implanting into F J-7 strain. The results showed that NIM-192 had good genetic stability and high flocculating activity, and the flocculating rate increased by 34.26% than that of the original. Sucrose, complex nitrogen source contained yeast extract, urea and pH 7.0～ 9.0 were chosen as the best carbon source, nitrogen source and initial solution pH for bioflocculant production, respectively. The bioflocculant kept high and stable flocculating activity at alkalinous reaction mixture with a pH beyond 7.0, while the flocculating activity was remarkably reduced when the reaction pH was lower than 7.0. Addition of many cations could obviously increase the flocculating rate, among which Ca^2＋ demonstrated the best effect. The bioflocculant had very strong acid-base stability and thermo-stability.The flocculating rate kept over 86% when pH of the bioflocculant was in a range of 3.0 ～ 12.0, and the change of flocculating activity was not great when heated at 100℃ for 60 rain.     

Ion beam propagation and focusing

Inertial confinement fusion with ion beams requires the efficient delivery of high energy (1 MJ), high power (100 TW) ion beams to a small fusion target. The propagation and focusing of such beams is the subject of this paper. Fundamental constraints on ion beam propagation and focusing are discussed, and ion beam propagation modes are categorized. For light ion fusion (LIF), large currents (2–33 MA) of moderate energy (3–50 MeV) ions of low atomic number (1A12) must be directed to a target of radius 1 cm. The development of pulsed power ion diodes for LIF is discussed, and the necessity for virtually complete charge neutralization during transport and focusing is emphasized. Fornear-term LIF experiments, the goal is to produce pellet ignition without the standoff needed for the ultimate reactor application. Ion diodes for use on Sandia National Laboratories Particle Beam Fusion Accelerators PBFA-I (2–4 MV, 1 MJ, 30 TW, operational) and PBFA-II (2–16 MV, 3.5 MJ, 100 TW, scheduled for operation in 1985) are discussed. Ion beam transport from these diodes to the pellet is examined in reference to the power brightness . While values of =2–5 TW/cm²/sr have been achieved to date, a value of 100 TW/cm²/sr is needed for breakeven. Research is now directed toward increasing , and means already exist (e.g., scaling to higher voltages, enhanced ion diode current densities, and bunching), which indicate that the required goal should be attainable. Forfar-term LIF applications, the goal is to produce net energy gain with standoff suitable for a reactor. This may be achieved by ion beam transport in preformed, current-carrying plasma channels. Channel transport research is discussed, including experiments with wire-initiated, wall-initiated, and laser-initiated discharge channels, all of which have demonstrated transport with high efficiency (50–100%). Alternate approaches to LIF are also discussed, including comoving electron beam schemes and a neutralized beam scheme. For heavy ion fusion (HIF), moderate currents (10 kA) of high energy (10 GeV) ions of high atomic number (A200) must be directed to a target of radius 0.3 cm. Conventional accelerator drivers for HIF are noted. For a baseline HIF reactor system, the optimum transport mode for low charge state beams is ballistic transport in near vacuum (10^–4–10^–3 Torr lithium), although a host of other possibilities exists. Development of transport modes suitable for higher charge state HIF beams may ultimately result in more economical HIF accelerator schemes. Alternate approaches to HIF are also discussed which involve collective effects accelerators. The status of the various ion beam transport and focusing modes for LIF and HIF are summarized, and the directions of future research are indicated.     

Studies on Mutation Breeding of High-Yielding Xylanase Strains by Low-Energy Ion Beam Implantation

As a new mutagenetic method, low-energy ion implantation has been used widely in many research areas in recent years. In order to obtain some industrial strains with high xylanase yield, the wild type strain Aspergillus niger A3 was mutated by means of nitrogen ions implantation （10 keV, 2.6× 10^14 ～ 1.56 × 10^15 ions/cm^2） and a mutant N212 was isolated subsequently. However, it was found that the initial screening means of the high-yielding xylanase strains such as transparent halos was unfit for first screening. Compared with that of the wild type strain, xylanase production of the mutant N212 was increased from 320 IU/ml to 610 IU/ml, and the optimum fermentation temperature was increased from 28 ℃ to 30 ℃.     

Bioeffects of Low Energy Ion Beam Implantation： DNA Damage, Mutation and Gene Transter

Low-energy ion beam implantation （10 - 200 keV） has been proved to have a wide range of biological effects and is broadly used in the breeding of crops and micro-organisms.To understand its mechanisms better and facilitate its applications, the developments in the bioeffects of low energy ion beam implantation in the past twenty years are summarized in this paper.     

Cr/CrN Compound Films Prepared by Ion Beam Assisted Deposition for Improving the Performance of Bearing Steel

With the development of industry, much attention has been paid to lengthening the life span of bearings. As reported in this paper, we investigated the Cr/CrN compound films formed on the specimens of W9Cr4V2Mo bearing steel by ion beam assisted deposition for improving the performance of bearing steels. The Vicker＇s microhardness, pin-on-disc, electrochemical measurement, XRD and SEM tests were used to characterize and analyze the treated samples. All results indicated that the mechanical properties of the treated samples were good, with the microhardness greater than that of the uncoated specimen, and the wear resistance, the passivity and pitting corrosion resistance increased considerably, the films possessed alternate Cr and CrN compound phases and produced different effects on the improvement of the performance of W9Cr4V2Mo bearing steels with different composing phases.     

A Mutant of Bacillus Subtilis with High-Producing Surfactin by Ion Beam Implantation

In order to generate a mutant of Bacillus subtilis with enhanced surface activity through low energy nitrogen ion beam implantation, the effects of energy and dose of ions implanted were studied. The morphological changes in the bacteria were observed by scanning electron microscope （SEM）. The optimum condition of ions implantation, 20 keV of energy and 2.6 × 10^15N^＋/cm^2 in dose, was determined. A mutant, B.s-E-8 was obtained, whose surface activity of 50-fold and 100-fold diluted cell-free Landy medium was as 5.6-fold and 17.4-fold as the wild strain. The microbial growth and biosurfactant production of both the mutant and the wild strain were compared. After purified by ultrafiltration and SOURCE 15PHE, the biosurfactant was determined to be a complex of surfactin family through analysis of electrospray ionization mass spectrum （ESI/MS） and there was an interesting finding that after the ion beam implantation the intensities of the components were different from the wild type strain.     

利用离子束技术及PECVD制备碳化硅

阐述利用离子注入、离子束增强沉积、反应离子束溅射及反应离子束辅助沉积等方法制备碳化硅薄膜的实验结果，并报道利用等离子体增强化学气相沉积技术制备可光致发光的非晶态α－ＳｉＣ：Ｈ薄膜的工作。     

离子束混合生成银-黄铜合金混层及其摩擦性能

黄铜是工业上应用十分广泛的一种合金材料,若能改善其表面的摩擦性能,又保持基体原有的强度,将是具有实际意义的。为此,我们用离子束混合技术将银引入黄铜基体,在表面生成了润滑性能良好的银-黄铜合金混层,并对其摩擦性能、强度及与基体的结合力作了对比试验,然后用AES、SIMS、SEM以及光学显微镜对其混合状态和表面形貌作了分析和