Flexible Magnetoreceptor with Tunable Intrinsic Logic for On-Skin Touchless Human-Machine Interfaces

Artificial magnetoception is a new and yet to be explored path for humans to interact with the surroundings. This technology is enabled by thin film magnetic field sensors embedded in a soft and flexible format to constitute magnetosensitive electronic skins (e-skins). Being limited by the sensitivity to in-plane magnetic fields, magnetosensitive e-skins are restricted to basic proximity and angle sensing and are not used as switches or logic elements of interactive wearable electronics. Here, a novel magnetoreceptive platform for on-skin touchless interactive electronics based on flexible spin valve switches with sensitivity to out-of-plane magnetic fields is demonstrated. The technology relies on all-metal Co/Pd-based spin valves with a synthetic antiferromagnet possessing perpendicular magnetic anisotropy. The flexible magnetoreceptors act as logic elements, namely momentary and permanent (latching) switches. The switches maintain their performance even upon bending to a radius of less than 3.5 mm and withstand repetitive bending for hundreds of cycles. Here, flexible switches are integrated in on-skin interactive electronics and their performance as touchless human-machine interfaces is demonstrated, which are intuitive to use, energy efficient, and insensitive to external magnetic disturbances. This technology offers qualitatively new functionalities for electronic skins and paves the way towards full-fledged on-skin touchless interactive electronics.     

Technology and electric characteristics of the field-effect hall sensor based on SOI structure

Dependences of electric characteristics on the technological parameters of the field-effect Hall sensors based on SOI structures (FEHS-SOI) are discussed. The manufacturing process for the formation of a magnetosensitive structure comprising the field-effect Hall sensor based on a MOSFET in the SOI structures was simulated. Electrical characteristics of the device were calculated and the optimization research devoted to the influence of process parameters on the FEHS-SOI voltage-current characteristics and sensitivity was made.     

差分霍尔效应加速度测量方法及其线性实验模拟

对磁场中对称结构的霍尔元件的输出特性进行研究,提出一种差分霍尔效应加速度测量方法。基于线性霍尔元件和圆柱形永磁体设计加速度测量模型,两个霍尔元件与磁体构成对称互补结构,以差分方式输出信号电压。建立加速度与输出电压的线性关系,实现以非接触的方式测量加速度。模型的对称互补式设计,减小了非线性因素对测量的影响,改善了输出线性度。差分式电压输出,能够抑制共模干扰和零点漂移,并提高了信号幅度。对模型进行线性模拟实验,实验结果符合理论结论。数据分析显示,测量方法具有较高灵敏度和线性度。     

Simulation model for a silicon Hall sensor in an absolute digital position detection system

The performance of a digital position detection system with silicon Hall sensors for the detection of coded absolute position data has been investigated. The position information is fixed in one single track as a maximum length sequence of bits by means of longitudinal saturation recording in a hard-magnetic layer. The Hall elements are positioned with their surface parallel to the hard-magnetic layer.An efficient computer simulation model has been realized which calculates the response of a Hall element in the fringing field. The computed results are compared with experimental data on Hall elements which were realised using MOS-IC technology. The simulation model appeared to be sufficiently accurate for a first-order estimation of the performance of an absolute position detection system on the basis of silicon Hall elements. The resolution which can be realized depends strongly on the noise level in the elements and will be of the order of a few hundred μm.     

Design of a CMOS oscillator with magnetic-field frequency modulation

A magnetosensitive n-channel split-drain MOSFET (MAGFET) integrated with a current-controlled oscillator on a single chip is described. This magnetically controlled oscillator (MCO), which was fabricated in 5-/spl mu/m CMOS technology, is sensitive to magnetic fields perpendicular to the chip surface. The output of the MCO is a square wave whose frequency varies linearly with, and is modulated by, the magnetic input signal.     

Electromagnetically compatible CMOS auto-balanced current sensor for highly integrated power control System-On-Chip

This paper describes the design and prototyping of an auto-balanced contactless current sensor in standard Complementary Metal–Oxide–Semiconductor (CMOS) technology, without any additional post-processing cost. The architecture includes two high-sensitivity Hall plates with differential amplification electronics. A high common mode rejection is insured by the integrated auto-balancing system based on the use of integrated coils. When a common current is applied in the embedded coils, the integrated system provides a feedback signal to a digital control unit which in turn adjusts the biasing current of one of the Hall plates in order to balance the amplification of the two Hall plates. Designed in a standard CMOS technology, this sensor can be integrated in power control System-On-Chip requiring extremely electro-magnetically compatible current sensor.     

An improved compact model for CMOS cross-shaped Hall-effect sensor including offset and temperature effects

A compact model of a cross-shaped horizontal integrated Hall-effect sensor is presented in this paper. Compared to existing models, reliability is improved, especially to simulate systems in which biasing and measurement circuits are not independent. The Hall device model core, already published, is based on a network of six non-linear resistances and four Hall voltage sources, and includes only 11 physical parameters. In this paper, in order to improve model predictivity, four additional parameters have been added to take the offset issue into account. In addition, variations of parameters with temperature are also addressed. The model is implemented in Verilog-A and has been validated through experiments carried out on Hall devices designed in a CMOS 0.35??m technology. The parameters extraction procedure is detailed and the maximum error between simulations and experimental data is less than 1?% for a wide range of biasing currents and temperatures.     

LTCC片式LC带通滤波器的设计与实现

介绍了基于LTCC(低温共烧陶瓷)共烧技术和厚膜技术工艺特点进行集成式L和C元件建模、LTCC集成式LC滤波器的设计技术.根据LTCC集成元件体积小寄生参数较大的特点,将常规LC滤波器的电路拓扑进行诺顿变换,并利用LTCC片式LC滤波器进行整体建模优化仿真出合格参数曲线.利用LTCC工艺,最终制造出体积为4 mm×6.5 mm×1.6 mm的片式带通滤波器.该滤波器具有带宽宽,阻带抑制度高且宽的特点,非常适合目前使用传统LC滤波器的应用场合,减小了安装面积,增加了整体电路可靠性,同时由于采用LTCC技术,非常适合批量生产.     

GaAs Hall devices produced by local ion implantation

GaAs Hall devices were produced by complete planar technology using two selective silicon ion implantation steps. The fundamental characteristics of these devices with respect to reproducible implantation dose and geometry of cross-shaped elements are obtained both by experiment and calculation. The prominent properties of the GaAs Hall elements presented are high sensitivity and linearity, small temperature dependence of sensitivity and resistance, and low residual voltage.     

Hall effect on inertial electrons in semiconductors

A new effect, which is attributable to the Lorentz force acting on electrons in a semiconductor undergoing acceleration, is predicted. An expression is obtained for the Hall field and the Hall voltage is estimated for a real two-dimensional heterostructure. Possible schemes for intensifying the Hall field are analyzed for the example of two Hall elements, one of which is a voltage generator and the other is a load. Fiz. Tekh. Poluprovodn. 31, 468–469 (March 1997)     

Compact modeling of vertical hall-effect devices: electrical behavior

This paper presents the development of a design-oriented compact model of vertical Hall-effect sensors integrated in CMOS technologies. Such a model makes easier the design of integrated Hall systems, permitting designers to co-simulate the Hall sensing element with the biasing and processing electronics thanks to a single electrical simulator. Here focus is put on the electrical behavior, i.e. the resistive behavior of a 5-contact vertical Hall device. The model is based both on theoretical considerations and on FEM numerical simulations performed with COMSOL^®. The result is a new predictive compact model, written in Verilog-A, with 7 input terminals and 14 parameters, mainly sensor geometrical and technological parameters. These parameters can be easily extracted from measurements carried out on a single sensor. The compact model has been validated by FEM simulations, as well as by comparing its response with experimental results obtained from a vertical Hall device fabricated in a CMOS 0.35 μm technology. The root mean square error of the model with respect to experimental results obtained on a wide range of typical sensor biasing conditions is below 2 %. Such a resistive model opens the way to an efficient, complete compact model of the vertical Hall device, i.e. including the Hall-effect as well as all the second-order galvanomagnetic effects.     

Integrated semiconductor magnetic field sensors

A magnetic field sensor is an entrance transducer that converts a magnetic field into an electronic signal. Semiconductor magnetic field sensors exploit the galvanomagnetic effects due to the Lorentz force on charge carriers. Integrated semiconductor, notably silicon, magnetic field sensors, are manufactured using integrated circuit technologies. Integrated sensors are being increasingly developed for a variety of applications in view of the advantage offered by the integration of the magnetic field sensitive element together with support and signal processing circuitry on the same semiconductor chip. The ultimate goal is to develop a broad range of inexpensive batch-fabricated high-performance sensors interfaced with the rapidly proliferating microprocessor. This review aims at the recent progress in integrated silicon magnetic devices such as integrated Hall plates, magnetic field-effect transistors, vertical and lateral bipolar magnetotransistors, magnetodiodes, and current-domain magnetometers. The current development of integrated magnetic field sensors based on III-V semiconductors is described as well. Bulk Hall-effect devices are also reviewed and serve to define terms of performance reference. Magnetic device modeling and the incorporation of magnetic devices into an integrated circuit offering in situ amplification and compensation of offset and temperature effects are further topics of this paper. Silicon will continue to be aggressively exploited in a variety of magnetic (and other) sensor applications, complementary to its traditional role as integrated circuit material.     

数码技术对视觉传达设计的影响及融合应用

数码技术的出现对视觉传达设计产生了巨大的冲击和深远的影响，其在视觉传达设计领域的渗入应用，改变了视觉传达设计的手段和方法、丰富了视觉传达设计的基本要素、拓展了视觉传达设计的边界。文中基于视觉传达设计工作实践，结合相关文献研究，就数码技术对视觉传达设计的影响进行了分析，并在此基础上，探讨了数码技术在视觉传达设计中的一些融合应用，即数码技术与绘画艺术的结合——Computer Graphics（CG技术）、3D数码技术和虚拟现实技术在视觉传达设计中的应用。     

Magnetically controlled two-terminal device with negative differential resistance and <Emphasis Type="Italic">N</Emphasis>-type current-voltage characteristic

The results of studying the effect of a dc magnetic field on the operating conditions of an active two-terminal device, including a two-collector bipolar magnetotransistor as a magnetosensitive element in the control circuit are reported. The possibility of implementing a magnetically controlled device with a negative differential resistance and N-type current-voltage characteristic is shown.     

FD SOI Hall sensor electronics interfaces for energy measurement

This paper presents a SOI Hall sensor based microsystem for energy measurement. The mixed-mode signal circuitry has been entirely designed and integrated in the experimental 0.5 μm fully depleted SOI 3 V technology. It consists of an integrated Hall element, chopper stabilized sensor bias system, analog front end and digital back end. Aiming at performing accurate measurements, we have implemented a high linearity analog front end, as well as a high-resolution analog-to-digital conversion technique. Two versions of the microsystem have been realized. The first test chip contains a classical instrumentation amplifier as sensor amplifier, whereas the second one contains a linearized differential-difference amplifier as sensor amplifier. Both microsystems are fully functional and permits one to perform the measurements with an overall system error that is less than ±1.5%.     

硅栅CMOS磁敏器件的研制

本文用标准硅栅CMOS工艺研制了CMOS磁敏器件,用霍尔角解释了器件工作原理,所提出的理论与实验结果相符合。在此基础上给出了高灵敏度器件的几何结构,并提出了实际应用CMOS磁敏器件的设计方案。     

Implementation and applications of multivalued decoders

A synthesis procedure is described for multivalued threshold decoders and their application to the implementation of multivalued functions. This method is based on the definition of inversion and extreme functions. Decoders are obtained using only the very simple blocks which synthesize inversion functions. This general design procedure may be used for any integrated circuit technology. As an example, the method is applied to the synthesis of an integrated CMOS quaternary decoder. Both the layout and the timing of the integrated circuit, and their application to the synthesis of multivalued functions and multistable memory elements, are shown.     

亥姆霍兹磁场分布演示仪的设计与实现

亥姆霍兹线圈是一对匝数和半径相同的共轴平行放置的圆线圈,两线圈间的距离等于线圈半径。亥姆霍兹磁场分布演示仪是利用单片机技术将霍尔探头检测到的磁场信号显示到点阵屏上,移动探头就可以将磁场分布情况以曲线的形式显示出来。该仪器主要服务于实验教学,生动立体的演示给教学带来了很好的效果。     

Nonlinearity in hall devices and its compensation

Three types of nonlinearity effects can be distinguished in Hall devices: material, geometrical and junction field-effect nonlinearity. Material nonlinearity, a magnetic field dependence of the Hall coefficient, is experimentally characterized for n-type silicon as a function of carrier concentration and temperature. Geometrical nonlinearity, which is due to the short-circuiting effects by the sensor contacts, is related to the geometrical correction factor. It is shown that material and geometrical non-linearity can mutually cancel. Junction field-effect nonlinearity comes about as a modulation of the plate thickness in junction-isolated, integrated Hall devices. The junction field-effect can also be used to compensate nonlinearity.     

高集成小型化中频滤波组件设计与实现

为满足雷达接收机中频滤波器组集成滤波器数量多、集成度高的需求,文中采用三维集成技术,设计了一种小型化LC滤波器电路,并对三维LC滤波器在组件中的应用和集成工艺进行分析和研究.三维LC滤波器采用两个基板,利用三维集成工艺和BGA技术实现两个基板的三维集成组装.将电容元件置于底层基板可实现高密度布局,将电感元件置于顶层基板...