表面织构对红光LED发光的影响

运用蒙特卡罗法模拟二维红光LED表面织构对LED光提取效率的影响.模拟了不同形状的表面织构对应的光强变化率.选取刻蚀深度为4μm、腐蚀宽度为2μm、倾角为40°、周期为2μm的表面图形对LED进行粗化实验.结果显示,引入表面织构后光强比常规LED提高了20.56%;并对模拟结果与实验结果进行了分析,结果表明引入表面织构可以有效地提高LED的光提取效率.     

高提取效率表面织构红光发光二极管

给出了用蒙特卡罗射线追踪法模拟发光二极管(LED)光提取效率的过程,并对表面织构LED的光提取效率进行了模拟分析,得到存在一组优化的表面织构参数,可使LED的光提取效率提高36%。通过湿法腐蚀和干法刻蚀相结合工艺,制备了表面织构的红光LED,器件的轴向光强提高了20.6%。理论和实验结果,表明表面织构技术是提高LED光提取效率的一个主要途径。     

ZnO微纳结构对GaN基LED光提取效率的影响研究

基于时域有限差分法(FDTD)在GaN基LED表面分别生长了 ZnO柱状与锥状微纳结构,并利用Rsoft模拟仿真软件分析了两种结构的几何参量(排列周期p、高度H、底面直径D等)对GaN基LED光提取效率的影响.结果表明两种结构均可提高器件的光提取效率,柱状结构在H=0.25 μm,p=1.5 μm,D=0.9μm时表现最优,其光提取效率是未加任何结构平板LED的5.6倍;而锥状结构在H=0.6μm,p=1.4 μm,D=1.4 μm时表现最优,其光提取效率是未加任何结构平板LED的5.3倍.研究结果对高性能GaN基LED的设计与制备具有一定指导意义.     

具有纳米级结构出光面的AlGaInP基发光二极管

研究了一种利用金属自组装纳米掩膜和ICP刻蚀对AlGaInP基发光二极管(LED)表面进行粗化的技术,使光输出得到了提高.粗化了的AlGaInP基LED比常规的AlGaInP基LED,光强提高了27%,光功率提高了12.6%,实验结果具有可重复性.可以进一步优化Au颗粒的周期和分散程度,提高AlGaInP基LED的提取效率.     

表面粗化提高GaN基LED光提取效率的模拟

影响GaN基LED的外量子效率低下的主要因素是光子在半导体和空气界面处的全反射.根据实际芯片建立LED模型,利用蒙特卡罗方法进行光线追迹模拟,分析了光子的主要损耗对出光效率的影响.计算不同的表面粗化微元,微元尺寸及微元底角对LED光提取效率的影响;比较不同微元形成的光场分布.模拟显示:所设计最佳的表面粗化结构在理想状况下可以提高光提取效率3倍以上.     

表面粗化提高红光LED的光提取效率

介绍了通过出光表面粗糙化来减少全反射的方法,实验中使用化学湿法腐蚀的技术获得预计的粗糙形貌,结果给出不同参数下的光强和光辐射功率比较,器件的外量子效率得到了约29%的提高。从理论和测试结果两方面阐述了表面粗糙化对提高红光LED外量子效率的机理。     

高亮度AlGaInP红光发光二极管

对用于提高AlGaInP红光发光二极管(LED)出光效率的分布布拉格反射镜(DBR)和增透膜进行了分析,用金属有机物化学气相沉积(MOCVD)生长了包含DBR和增透膜的LED,在20 mA注入电流下,LED的峰值波长为623 nm,光强达到200 mcd,输出光功率为2.14 mW.与常规的LED相比,光强和输出光功率有很大的提高.     

宽反射角DBR红光发光二极管

对用于提高AlGaInP红光发光二极管出光效率的传统DBR进行了分析,用MOCVD生长了包含对垂直入射光反射的DBR和对斜入射光反射的DBR复合在一起的红光LED,在20 mA注入电流下,LED的峰值波长为630 nm,轴向光强达到137 mcd,输出光功率为2.32 mW.与常规的LED相比,光强和输出光功率有很大的提高.     

GaN基LED的图形衬底优化研究

设计了方形和阶梯状两大类的图形化蓝宝石衬底(PSS), 使用Crosslight公司的工艺软件CSuprem建立了三维的方形和阶梯状两类图形衬底GaN LED器件, 然后使用APSYS软件模拟计算出它们的光电特性。并且对方形图形衬底的刻蚀深度进行了优化, 通过对模拟结果的比较得到刻蚀深度与边长的比值为0.4时, 这种方形图形衬底GaN LED的光提取效率最高, 且比平面衬底提高了20.13%。对阶梯状图形衬底的阶梯层数进行了比较, 发现随着阶梯层数的增加, 光提取效率也随着增加, 阶梯状层数为5时, 光提取效率比平面衬底提高了30.03%。并对方形PSS LED进行了实验验证。     

垂直结构GaN基LED的侧壁优化技术

为了提升垂直结构LED提取效率,针对器件侧壁出光的研究越发引起研究人员的关注。由于GaN的高折射率,大部分有源区发出的光线将被限制在GaN层内横向传输。对不同刻蚀倾角侧面的光提取效率进行分析模拟,模拟结果显示,LED的提取效率可以通过侧壁倾斜角度的优化得以提升。实验结果表明,特定侧壁倾角器件的提取效率相比较垂直侧壁提高了18.75%,电致发光光谱测试(EL)结果表明,实验结论与理论计算值基本吻合。本结论对垂直结构GaN基LED器件的优化设计与性能提升有重要指导意义。     

Improved light extraction in AlGaInP-based LEDs using a self-assembly metal nanomask

This paper reports a new method of fabricating AIGaInP-based nanorod light emitting diodes (LEDs) by using self-assembly metal layer nanomasks and inductively coupled plasma.Light-power measurements indicate that the scattering of photons considerably enhances the probability of escaping from the nanorod LEDs.The light-intensity of the nanorod LED is increased by 34% for a thin GaP window layer,and by 17% for an 8μm GaP window layer.The light-power of the nanorod LED is increased by 25% and 13%,respectively.     

Enhancing the Light Extraction of (Alx Ga1 − x) 0.5In0.5P-Based Light-Emitting Diode Fabricated via Geometric Sapphire Shaping

AlGaInP-based light-emitting diodes (LEDs) with a transparent sapphire substrate were fabricated by the glue-bonding (GB) method. This transparent sapphire substrate is a geometric shaping structure by wet etching processes. Furthermore, the n-side-up surface has a nano-roughened texture by natural mask and chemical wet etching processes. The light output of this novel LED structure could be enhanced about 26.7% (at 350 mA) due to the higher light extraction as compared with the conventional GB-LEDs.     

Improved Light Extraction Efficiency in AlGaInP Light-Emitting Diodes by Applying a Periodic Texture on the Surface

In this letter, AlGaInP-GaP-based light-emitting diodes (LEDs) were fabricated with an Si substrate and an SiO₂-ITO-Ag omni-directional reflector using a metal-to-metal bonding technique. To enhance light extraction efficiency, a periodic texture was applied to the (Al_0.5Ga_0.5)_0.5In_0.5P surface layer of AlGaInP-Si LEDs by photolithography and a wet etching process. The exterior of the etched texture consists of a series of bowl-shaped recesses. With a 350-mA current injection, the typical output power of the AlGaInP-Si LEDs with and without the textured surface (LED-I and LED-II, respectively) were measured at approximately 118 and 81 mW, respectively, when the LED chips were bonded on the TO 46 without resin encapsulation. The enhancement of output power in LED-I can be attributed to a multitude of bowl-shaped notches on the surface, which resulted in a reduction of the reabsorption probability of the photons due to the fact that the photon path length in LED-I is shorter than in LED-II before the photons escape into the free space.     

白光LED封装用蛾眼化荧光玻璃制备及光学性能

针对荧光玻璃封装白光LED存在的全反射损耗问题,制备了一种蛾眼化荧光玻璃用于提高白光LED光学性能。采用光刻和刻蚀工艺在蓝宝石基片的单面上制作出蛾眼阵列结构,再利用丝网印刷和低温烧结工艺在蓝宝石的另外一面制备YAG∶Ce^3+荧光玻璃层,最后将制备的蛾眼化荧光玻璃用于白光LED封装。通过控制荧光层厚度可以有效调节白光LED发光性能,当荧光层厚度为40μm时,白光LED光效为77.8 lm/W,色温为6024 K,显色指数为69.5。与平面荧光玻璃封装结构相比,在100 mA电流下蛾眼化荧光玻璃封装结构的光效提高了24.9%。结果表明,蛾眼化荧光玻璃提高了白光LED光效,有利于促进荧光玻璃封装白光LED的实际应用。     

Current Spreading and Blocking Designs for Improving Light Output Power from the Vertical-Structured GaN-Based Light-Emitting Diodes

In this work, use of localized Ti deposition associated with a transparent indium-zinc-oxide (IZO) layer is proposed to serve as Schottky current blocking and current spreading layer, respectively. In addition, an inductively coupled plasma (ICP) mesa etching on the surface layer (n-GaN) of regular vertical-conducting metal-substrate GaN-based light-emitting diodes (VM-LEDs) is also proposed to further enhance current spreading of the device. Through a two-dimensional device simulator, the calculated results indicate that significant avoidance of the current-crowding effect under cathode contact pad could be obtained once the n-GaN layer etching depth and width, IZO thickness, and Schottky current blocking width have been optimized. In experiments, 1000 m 1000 m GaN-based blue LEDs with an ICP mesa etching of 250 m in width and 2 m in depth on the surface n-GaN layer, 200 m in Schottky current blocking width, and a 300-nm-thick IZO layer have the been successfully fabricated. As compared to the regular VM-LEDs without the use of the present technology, typical improvement in light emission uniformity and light output power by about 6% and 38% at an injection current of 350 mA have been obtained.     

Enhancement in light output of InGaN-based microhole array light-emitting diodes

InGaN-based microhole array light-emitting diodes (LEDs) with hole diameters (d) of 3-15 /spl mu/m were fabricated using self-aligned etching. The effects of size on the device characteristics, including current density-voltage and light output-current density, were measured and compared with those of conventional broad-area (BA) LEDs fabricated from the same wafer. The electrical characteristics of the devices are similar to those of conventional BA LEDs. The light output from the microhole array LEDs increases with d up to 7 /spl mu/m. However, the light output declined as d increased further, perhaps because of the combination of the enhancement in extraction efficiency caused by the large surface areas provided by the sidewalls and the decrease in area of light generation by holes in the microhole array LEDs. The ray tracing method was used with a two-dimensional model in TracePro software. The findings indicate that an optimal design can improve the light output efficiently of the microhole array LEDs.     

激光改性硅酸盐玻璃表面局域制备金属铜层

为了实现普通硅酸盐玻璃表面的金属化,利用波长为355nm的脉冲紫外激光刻蚀粗化活化,并结合化学镀,在其表面局域制备出了导电金属铜层。研究了激光加工参量对玻璃表面微观形貌、粗糙度、刻蚀深度的影响规律,并在玻璃表面成功引入了钯元素。结果表明,当第1次紫外激光扫描速率为200mm/s、脉冲频率为100kHz、能量密度为27J/cm2~37J/cm2和填充间距在10μm左右时,玻璃表面可以获得的刻蚀深度在25μm~35μm之间,刻蚀区域的粗糙度R_a在6μm~7μm之间,此时玻璃不会开裂;而第2次激光的能量密度在9J/cm2~11J/cm2之间时（其余参量不变）,钯元素的引入实现了化学镀铜,此时铜层和玻璃之间的平均结合强度可以达到10MPa以上,铜层的体积电阻率可以达到10-6Ω·cm数量级。这是一种具有局域选择性、无需掩模、低成本、高结合强度和良好导电性的玻璃表面金属化工艺。     

Study of the pixel-pitch reduction for HgCdTe infrared dual-band detectors

The third generation of HgCdTe infrared-detector focal-plane arrays (FPAs) should be able to detect simultaneously in two spectral bands. The feasibility of this type of dual-band detectors has already been shown in our laboratory with a pixel size of 50 μm in the 3–5-μm wavelength range. To improve the detector resolution, it is necessary to decrease the pixel pitch. Dry etching is a key process technology to fulfill this goal because of the high aspect-ratio structures needed (typically 10–15-μm deep and 2–5-μm wide trenches). In this paper, we present results of a parametric study on HgCdTe dry etching, as well as results obtained on detector arrays made with the dry-etching technique. The etching study has been done in a microwave plasma reactor with the aim of controlling the surface roughness, the etch rate, and the slope of the trench side. We show how these parameters are influenced by the reactive gas-mixture composition (based on CH₄, H₂, and Ar) and the substrate self-bias. We show how polymer film deposition can prevent etching from occurring but can improve anisotropy. We show some examples of results obtained when manufacturing the trenches that separate the pixels, keeping a high fill factor, and anisotropic etching. We also show results of the material surface characterizations done with scanning electron microscopy (SEM) and Hall effect measurements. These studies allow us to evaluate and compare the damages done to the HgCdTe surface with different etching conditions. Our best process allows us to make a light electrical damage, confined to less than a micron deep in the material. Using the dry-etching process, we have developed detector arrays fabricated with a pixel pitch as low as 30 μm. We finally present the results of the first electrical characterizations made on these arrays, showing promising results for the development of high-resolution dual-band detectors.     

半加成法制作30μm精细线路及其工艺优化

在公司制程能力为70mm/70mm的工艺条件下,运用半加成法探索进行线宽为30mm的挠性双面板精细线路制作工艺研究。通过正交试验法的L9（34）正交表设计对精细线路制作中的显影速度、显影压力、蚀刻速度、蚀刻压力四个因素进行工艺优化,确定了线宽为30mm的挠性双面板精细线路制作的最佳条件。结果表明,显影速度为主要影响因素。     

侧向腐蚀在1.3μm垂直腔面发射激光器中的应用

研究了广泛应用于垂直腔面发射激光器(VCSEL)等I-V族光电子器件制作的侧向腐蚀技术.分别采用C6H8O7:H2O2溶液、HCl:H3PO4溶液对InAlAs材料,InP材料进行了侧向腐蚀试验,获得了较稳定的速率,并对其腐蚀机制和晶向选择性进行了分析.采用侧向腐蚀技术制备了电流限制孔径分别为11μm和5 μm的1.3...