一种新型的基于滑膜阻尼的电容式双向MEMS惯性传感器

设计了一个新型的结构完全对称的双向MEMS电容式惯性传感器.该传感器主要由可动质量块、栅形条、支撑梁、连接梁、阻尼调整梳齿组成.设计的结构采用变电容面积的检测方式,在降低空气阻尼的同时也降低了对DRIE工艺的要求,并通过加大测试信号电压来降低电路噪声,从而提高传感器的分辨率.用有限元工具ANSYS详细讨论了传感器的参数和性能,并模拟验证了设计的双向传感器的交叉效应近似为零.制作了滑膜阻尼测试器件,在大气压下,测得的品质因子可达514,验证了该结构设计可以提高传感器的分辨率和该工艺设计的可行性.     

环境振动测量电容式加速度传感器设计

设计了一种用于环境振动测量的高分辨率电容式加速度传感器,通过适当减小质量块的质量,不改变敏感电容的大小,降低了实现加速度传感器闭环控制对多晶硅固定电极刚度的要求,采用简单的加工工艺,多晶硅固定电极刚度就能满足加速度传感器闭环控制的需要.通过在传感器的三层电极上都刻蚀阻尼孔,减小阻尼,提高传感器的品质因子,传感器能提供μɡ级的分辨率.     

环境振动测量电容式加速度传感器设计

设计了一种用于环境振动测量的高分辨率电容式加速度传感器 ,通过适当减小质量块的质量 ,不改变敏感电容的大小 ,降低了实现加速度传感器闭环控制对多晶硅固定电极刚度的要求 ,采用简单的加工工艺 ,多晶硅固定电极刚度就能满足加速度传感器闭环控制的需要。通过在传感器的三层电极上都刻蚀阻尼孔 ,减小阻尼 ,提高传感器的品质因子 ,传感器能提供 μ犂级的分辨率     

MEMS压阻加速度传感器阻尼特性研究

研究了空气阻尼对MEMS压阻加速度传感器性能的影响,建立了传感器动力学模型和空气阻尼模型,分析了空气间隙大小与传感器阻尼系数的相互关系,通过控制空气间隙可以达到控制加速度传感器阻尼的目的。根据分析结果设计了三明治结构封装的传感器,应用有限元仿真软件,对传感器的应力和应变进行了仿真计算,完成传感器结构参数设计;采用MEMS体硅加工工艺和圆片级封装工艺,制作了MEMS压阻加速度传感器。测试结果表明,采用三明治结构封装形式,可以控制压阻加速度传感器的阻尼特性,为提高传感器性能提供了途径。     

环境振动测量电容式加速度传感器设计

设计了一种用于环境振动测量的高分辨率电容式加速度传感器，通过适当减小质量块的质量，不改变敏感电容的大小，降低了实现加速度传感器闭环控制对多晶硅固定电极刚度的要求，采用简单的加工工艺，多晶硅固定电极刚度就能满足加速度传感器闭环控制的需要。通过在传感器的三层电极上都刻蚀阻尼孔，减小阻尼，提高传感器的品质因子，传感器能提供μ9级的分辨率。     

一种用于MEMS检测的无耦合六维力传感器的研制

提出了一种用于MEMS检测试验平台中力学量测量的无耦合六维力/力矩传感器的设计.对传感器的结构形式、测量原理作了介绍,进行了试验验证并给出了从8路输出电压到六维力/力矩的传递矩阵.该传感器通过采用巧妙的结构形式和特定的电阻应变片布片方案实现了六维力解耦,大大简化了后置信号处理电路的设计且在各轴都具有较好的测量分辨率.实验证明,该传感器具有无耦合、测量分辨率高、线性度好、标定简单、贴片方便、制造成本低的优点,满足了预计的设计要求.     

多分辨率高速线列CMOS图像传感器设计

设计并验证了一款可选分辨率、高速1 024线列CMOS图像传感器。为了优化列总线读出速率,芯片采用总线分割技术以减小总线寄生电容,有效提升了信号读出速率。传感器具有4种可选择分辨率功能,使其具有更高的帧频。设计的芯片采用0.5μm标准CMOS工艺成功流片,验证了设计的正确性。测试结果表明：满阱容量为4.76 Me^-/像素,动态范围为75 dB;在128分辨率下,帧频能达到36 000 frames/s。     

一种高指向性MEMS声矢量传感器结构设计与分析

设计了一种高指向性微机电系统(MEMS)声矢量传感器,结构采用了硅-玻璃(SOG)工艺,增大流体间隙,减小振动阻尼,并利用ANSYS软件分析了流体间隙对指向性的影响,以验证结构的高指向性.结果表明,在流体间隙从5 μm增大到30 μm时,振动振幅增大30倍,相位差最高增大126°,当入射角度变化量为80°时,相位差变化量增大了40°,传感器指向性得到了显著提高.此种设计有助于促进声矢量传感器的发展.     

石墨烯压力传感器的设计与制作

为了降低电容式石墨烯压力传感器的成本,对石墨烯压力传感器的结构与工艺进行研究,简化加工工艺步骤,设计并制作出石墨烯传感器样片,该传感器样片的灵敏度分为多个区间,最高可达608 MPa~(-1)。首先,将石墨烯溶液制作成纸,利用雕刻工艺将石墨烯纸雕刻成为不同规格的平行叉指图形,并用聚二甲基硅氧烷(PDMS)薄膜覆盖制作成为石墨烯压力传感器。然后,对样片进行静态与动态性能的测试,对测试结果进行对比分析。结果表明该传感器制作工艺简单、成本低廉、性能优良。最后论证了传感器的可行性。     

一种用于MEMS检测的无耦合六维力传感器的研制

提出了一种用于MEMS检测试验平台中力学量测量的无耦合六维力 /力矩传感器的设计。对传感器的结构形式、测量原理作了介绍 ,进行了试验验证并给出了从 8路输出电压到六维力 /力矩的传递矩阵。该传感器通过采用巧妙的结构形式和特定的电阻应变片布片方案实现了六维力解耦 ,大大简化了后置信号处理电路的设计且在各轴都具有较好的测量分辨率。实验证明 ,该传感器具有无耦合、测量分辨率高、线性度好、标定简单、贴片方便、制造成本低的优点 ,满足了预计的设计要求     

A novel MEMS inertial sensor with enhanced sensing capacitors

A novel MEMS inertial sensor with enhanced sensing capacitors is developed. The designed fabricated process of the sensor is a deep RIE process, which can increase the mass of the seismic to reduce the mechanical noise, and the designed capacitance sensing method is changing the capacitance area, which can reduce the air damping between the sensing capacitor plates and reduce the requirement for the DRIE process precision, and reduce the electronic noise by increasing the sensing voltage to improve the resolution. The design and simulation are also verified by using the FEM tool ANSYS. The simulated results show that the transverse sensitivity of the sensor is approximately equal to zero. Finally, the fabricated process based on silicon-glass bonding and the preliminary test results of the device for testing grid capacitors and the novel inertial sensor are presented. The testing quality factor of the testing device based on the slide-film damping effect is 514, which shows that the enhanced capacitors can reduce mechanical noise. The preliminary testing result of the sensitivity is 0.492 pf/g.     

一个新型的大检测电容结构的MEMS惯性传感器研究

A novel MEMS inertial sensor with enhanced sensing capacitors is developed. The designed fabricated process of the sensor is a deep RIE process, which can increase the mass of the seismic to reduce the mechanical noise, and the designed capacitance sensing method is changing the capacitance area, which can reduce the air damping between the sensing capacitor plates and reduce the requirement for the DRIE process precision, and reduce the electronic noise by increasing the sensing voltage to improve the resolution. The design and simulation are also verified by using the FEM tool ANSYS. The simulated results show that the transverse sensitivity of the sensor is approximately equal to zero. Finally, the fabricated process based on silicon-glass bonding and the preliminary test results of the device for testing grid capacitors and the novel inertial sensor are presented. The testing quality factor of the testing device based on the slide-film damping effect is 514, which shows that the enhanced capacitors can reduce mechanical noise. The preliminary testing result of the sensitivity is 0.492pf/g.     

光纤Bragg光栅等强度悬臂梁型称重传感器的标定与不确定度分析

研制了一种等强度悬臂梁结构的光纤Bragg光栅称重传感器.为了确定其称量结果的可靠性,通过分析载荷信息传递过程与光栅敏感元件的感知原理,推演传感器设计的理论依据,设计了采用标准质量块进行标定的静态载荷实验装置,通过MATLAB实现静态传感数据分析,并分析标定过程中存在的不确定因素进而确定了传感器的不确定度指标.实验表明:所研制的光纤Bragg光栅等强度悬臂梁型称重传感器的灵敏度为0.0069 nm/N,非线性误差为4.93％,重复性误差为2.59％,迟滞误差为3.21％FS,称重传感器的测量不确定度为0.409 N.设计的光纤Bragg光栅等强度悬臂梁型称重传感器静态特性良好,在它量程范围内测量不确定度对结果的影响较小,满足性能要求,标定方法有效提高了标定效率和精度,为其他类型传感器综合性能定量分析提供了思路与工程实践.     

A passive UHF RFID tag chip with a dual-resolution temperature sensor in a 0.18μm standard CMOS process

This paper presents a passive EPC Gen-2 UHF RFID tag chip with a dual-resolution temperature sensor. The chip tag integrates a temperature sensor,an RF/analog front-end circuit,an NVM memory and a digital baseband in a standard CMOS process.The sensor with a low power sigma-delta(ΣΔ) ADC is designed to operate in low and high resolution modes.It can not only achieve the target accuracy but also reduce the power consumption and the sensing time.A CMOS-only RF rectifier and a single-poly non-volatile memory(NVM) are designed to realize a low cost tag chip.The 192-bit-N VM tag chip with an area of 1 mm~2 is implemented in a 0.18-μm standard CMOS process.The sensitivity of the tag is -10.7 dBm/-8.4 dBm when the sensor is disabled/enabled.It achieves a maximum reading/sensing distance of 4 m/3.1 m at 2 W EIRP.The inaccuracy of the sensor is -0.6℃/0.5℃(-1.0℃/1.2℃) in the operating range from 5 to 15℃in high resolution mode(-30 to 50℃in low resolution mode).The resolution of the sensor achieves 0.02℃(0.18℃) in high(low) resolution mode.     

二维电容式硅微加速度传感器的刚度求解

硅微电容式加速度传感器具有灵敏度高、噪音低、漂移小、功耗低、结构简单等优点 ,在军民两用市场中有着广泛的应用前景。本文针对自主开发设计的一种带折叠梁的二维叉指电容式硅微加速度传感器 ,采用力法求解了其主轴刚度 ,为进一步研究该二维微加速度传感器的动态响应特性提供了理论依据     

一种新型的带栅形条电容和可变间距电容的惯性信号检测结构

The comb capacitances fabricated by deep reactive ion etching （RIE） process have high aspect ratio which is usually smaller than 30 ： 1 for the complicated process factors, and the combs are usually not parallel due to the well-known micro-loading effect and other process factors, which restricts the increase of the seismic mass by increasing the thickness of comb to reduce the thermal mechanical noise and the decrease of the gap of the comb capacitances for increasing the sensitive capacitance to reduce the electrical noise. Aiming at the disadvantage of the deep RIE, a novel capacitive micro-accelerometer with grid strip capacitances and sensing gap alterable capacitances is developed. One part of sensing of inertial signal of the micro-accelerometer is by the grid strip capacitances whose overlapping area is variable and which do not have the non-parallel plate＇s effect caused by the deep RIE process. Another part is by the sensing gap alterable capacitances whose gap between combs can be reduced by the actuators. The designed initial gap of the alterable comb capacitances is relatively large to depress the effect of the maximum aspect ratio （30 ： 1） of deep RIE process. The initial gap of the capacitance of the actuator is smaller than the one of the comb capacitances. The difference between the two gaps is the initial gap of the sensitive capacitor. The designed structure depresses greatly the requirement of deep RIE process. The effects of non-parallel combs on the accelerometer are also analyzed. The characteristics of the micro-accelerometer are discussed by field emission microscopy （FEM） tool ANSYS. The tested devices based on slide-film damping effect are fabricated, and the tested quality factor is 514, which shows that grid strip capacitance design can partly improve the resolution and also prove the feasibility of the designed silicon-glass anodically bonding process.     

石英微机械陀螺双轴减振设计

石英微机械陀螺是一种应用广泛的惯性测量元器件,对于常见的双轴微机械陀螺,在使用过程中需要同时测量两个轴向的角速度,但各敏感元器件间存在振动干扰。因此,需要减振结构降低这种干扰,若采用单轴减振结构,则每个敏感元器件都需要减振结构,导致双轴微机械陀螺的体积较大,为解决这一问题,设计了一种石英微机械陀螺双轴减振装置,采用新型减振体和减振橡胶垫环形分布的稳固结构,且通过有限元ANSYS软件仿真优化。结果表明,石英微机械减振装置可有效避开石英微机械敏感元器件的工作频率,减振效果良好,可达97%,减少了外界噪声,提高了石英微机械双轴陀螺的性能。     

A novel capacitive micro-accelerometer with grid strip capacitances and sensing gap alterable capacitances

The comb capacitances fabricated by deep reactive ion etching (RIE) process have high aspect ratio which is usually smaller than 30 : 1 for the complicated process factors, and the combs are usually not parallel due to the well-known micro-loading effect and other process factors, which restricts the increase of the seismic mass by increasing the thickness of comb to reduce the thermal mechanical noise and the decrease of the gap of the comb capacitances for increasing the sensitive capacitance to reduce the electrical noise. Aiming at the disadvantage of the deep RIE, a novel capacitive micro-accelerometer with grid strip capacitances and sensing gap alterable capacitances is developed. One part of sensing of inertial signal of the micro-accelerometer is by the grid strip capacitances whose overlapping area is variable and which do not have the non-parallel plate's effect caused by the deep RIE process. Another part is by the sensing gap alterable capacitances whose gap between combs can be reduced by the actuators. The designed initial gap of the alterable comb capacitances is relatively large to depress the effect of the maximum aspect ratio (30 : 1) of deep RIE process. The initial gap of the capacitance of the actuator is smaller than the one of the comb capacitances. The difference between the two gaps is the initial gap of the sensitive capacitor. The designed structure depresses greatly the requirement of deep RIE process. The effects of non-parallel combs on the accelerometer are also analyzed. The characteristics of the micro-accelerometer are discussed by field emission microscopy (FEM) tool ANSYS. The tested devices based on slide-film damping effect are fabricated, and the tested quality factor is 514, which shows that grid strip capacitance design can partly improve the resolution and also prove the feasibility of the designed silicon-glass anodically bonding process.     

新型磁驱动增大检测电容的高精度MEMS惯性传感器研究

增大传感器振子的质量和静态测试电容可以减小电容式MEMS惯性传感系统的噪声,而深度粒子反应刻蚀工艺由于复杂的工艺原因,当深宽比较大时,不能刻蚀出大质量和大初始电容的传感器.据此,本文研究了一种磁驱动增大检测电容的MEMS惯性传感器,通过电磁驱动器,传感器的静态测试电容可以大幅增加,在梳齿电容上刻蚀阻尼槽后,其机械噪声达到0.61μg每根号赫兹,仿真其共振频率为598Hz,静态位移灵敏度为0.7μm每重力加速度,基于硅 玻璃键合工艺,制作了栅形条电容式惯性传感器,并用电磁驱动的方式测试其品质因子达到715,从而验证了制作工艺的可行性和电磁驱动器改变传感器初始静态测试电容的可行性.