周期永磁聚焦电子注的实验测定

为了确定在行波管制造过程中所允许的公差,用一个能够对周期永磁系统内的电子注进行自动三维测绘的电子注分析器,测量了电子注位置和电子注脉动与电子注注入的偏心度、电子枪的倾斜度以及阳极—周期永磁聚焦系统间隔之间的关系。在周期永磁聚焦系统中,横向场的影响看来是严重的。对实验结果和二维Hermannsfeldt计算机程序的计算结果进行了比较。     

多注周期永磁聚焦系统横向磁场的研究

从理论上对多注行波管周期永磁聚焦系统横向磁场的性质以及对电子注聚焦的影响进行了讨论,并借助仿真手段分析了一五注耦合腔周期永磁聚焦系统各电子注通道轴内的横向磁场分布规律,讨论耦合槽结构对横向磁场分布的影响,并对横向磁场造成的电子注偏移进行了粒子模拟。     

多注耦合腔行波管互作用均匀性研究

对多注行波管慢波结构的特性进行了模拟与分析,利用粒子模拟方法,定量模拟了多注行波管的PIC注波互作用过程,通过比较不同电子注位置情况下电场E的振幅、相移、非线性和互作用效率,研究了多注电子注波互作用的均匀性特点,发现电子注位置不同时对电场有不同的影响,这对实际多注耦合腔行波管设计有一定指导意义。     

Cusptron振荡器的分析与计算

本文对Cusptron进行了理论研究。首先分析了在cusp磁场中电子的运动。在此基础上研究了电子注与驻波场的互作用。在f_o=35GHz对16个翼片的磁控管型腔中H_(511)π摸与电子注互作用(8次回旋谐波)进行了数值计算。考虑了电子注中速度分布、注厚度以及B_k≠B_o等因素对电电效率的影响。     

浸没流多透镜多注电子光学系统的模拟研究

该文采用先2维后3维的计算方法,对L波段高峰值功率多注速调管电子光学系统进行了模拟设计。采用均匀场浸没流多透镜聚焦系统对电子注进行聚焦,获得了通过率100%,填充因子55%,特性良好的旁轴电子注。模拟计算表明,多透镜系统可有效调整电子注平衡半径,电子枪区均匀场可有效调整电子注波动性及层流性,聚集系统可在阴极磁感应强度为0.001~0.01 T,主磁场为0.06~0.13 T的范围内实现对旁轴电子注的良好聚焦。     

横向行波速调管注—波互作用研究

文章用电磁仿真软件CST模拟仿真了一种具有带状电子注的行波速调管,这种行波速调管利用矩形波导而非谐振腔对带状电子注进行速度调制,从而使得电子注密度得到调制,使得电磁能量得到放大。     

基于Spindt冷阴极的行波管电子枪设计

针对X波段小型化Spindt冷阴极螺旋线行波管进行了电子枪设计.基于皮尔斯型电子枪结构,联合PPM高频聚焦系统,以电子注聚焦特性为优化目标,采用CST粒子工作室对电子枪结构和工作参数进行了优化设计,获得了 30 mA工作电流下电子注填充比为0.68的良好电子注聚焦.在此电子枪结构和高频结构下,分析了特定电流下电子注聚焦...     

电子注偏心对共焦波导回旋行波管的影响

利用线性和非线性理论研究了电子注偏心对0.22 THz回旋行波管注波互作用的影响。基于色散方程研究了电子注偏心对线性增益、绝对不稳定性的起振电流和返波振荡的起振条件的影响。引入自洽非线性理论,分析了电子注偏心对输出功率和注波互作用效率的作用。同时,在考虑速度离散的情况下,研究了电子注质量对共焦波导注波互作用的影响。结果表明,电子注偏心会导致效率的降低。     

基于SDRWS的340 GHz返波管的计算机模拟

采用计算机模拟的方法对一种基于双排矩形波导慢波结构(SDRWS)的340 GHz返波管进行详细研究。首先对返波管所需的电子枪和永磁聚焦系统进行计算机模拟,结果表明,永磁聚焦系统与电子枪相结合,能够产生并维持14~17 kV,43.4 mA的电子注和18~21 kV,56.1 mA的电子注,且电子注电压在14~21 kV之间时,电子注在慢波结构区域的最大半径小于0.08 mm,半径波动最大值为0.034 mm。利用所计算的电子注,对基于SDRWS的340 GHz返波管进行互作用计算,结果表明,当电子注电压在14~21 kV之间调谐时,输出电磁波在326~352.6 GHz之间,输出功率大于2 W。同时,SDRWS的电子注通道半径为0.09 mm,相对较大,降低了返波管的制造难度。     

碳纳米管冷阴极Pierce电子枪

为发展场致发射冷阴极毫米波电真空辐射源器件, 对利用大面积碳纳米管冷阴极产生大电流、高电流密度电子注的电子光学系统进行了研究.通过在Pierce电子枪阴极表面引入栅网结构, 解决了碳纳米管冷阴极场致发射所需的强电场和电子聚束问题.在碳纳米管冷阴极实验测试数据的基础上, 采用粒子模拟软件对上述电子光学系统进行了仿真.研究了栅网对注电流、注腰半径和电子注散射的影响, 分析了阳极电压和外加轴向磁场对电子注的聚束作用.优化后的仿真结果表明在阴极发射面为3.03 cm2时, 该电子光学系统能够产生210 mA、60 kV, 电流密度为6.7 A/cm2, 最大注半径为1mm的电子注.     

用于纳米器件的电子束与光学混合光刻技术

成功开发出了一种可用于纳米结构及器件制作的电子束与光学光刻的混合光刻工艺。通过两步光刻工艺,在栅结构层上采用大小图形数据分离的方法,使用光学光刻形成大尺寸栅引出电极结构,利用电子束直写形成纳米尺寸栅结构,并通过图形转移工艺解决两次光刻定义的栅结构的叠加问题。此混合光刻工艺技术可以解决纳米电子束直写光刻技术效率较低的问题,同时避免了电子束进行大面积、高密度图形曝光时产生严重邻近效应影响的问题。这项工艺技术已经应用于先进MOS器件的研发,并且成功制备出具有良好电学特性、最小栅长为26 nm的器件。     

Improved CD control and line edge roughness in E-beam lithography through combining proximity effect correction with gray scale techniques

A proximity effect correction (PEC) technique for E-beam lithography is presented which overcomes hardware limitations of many older E-beam writers regarding the number of physical dose classes by a unique combination of gray scale techniques with PEC using the Layout BEAMER software. The benefit is not only an improvement in critical dimension control, but also an improvement in line edge roughness (LER). Compared to standard PEC techniques the percentage line width deviation has been dramatically reduced by more than a factor of three.     

Does short wavelength lithography process degrade the integrity of thin gate oxide?

This paper presents the results of investigation on integrity of X-ray/E-beam irradiated thin gate oxides. A large increase of gate oxide leakage current is observed after irradiation on thin gate oxide under X-ray/E-beam lithography conditions. This radiation-induced leakage current (RILL) can be removed by a thermal annealing at 400°C and above, without adverse effect to the oxide integrity. In addition, it is found that ionizing exposures do not significantly affect the breakdown and quasi-breakdown characteristics in ultra-thin oxide.     

Application of E-beam recrystallization to three-layer imageprocessor fabrication

E-beam recrystallization has been applied to the fabrication of a three-layer processor. The seed structure and the E-beam conditions were successfully optimized so that a large-area SOI as wide as 1 mm was recrystallized without void generation with no damage to underlying devices. The actual SOI area in the device, 850×1100 μm, was recrystallized with one E-beam scan by aligning its position. The three-layer image processor was capable of visual image sensing with a feature outline extraction in a parallel processing manner. Normal operations of the fundamental functions have been confirmed, demonstrating the feasibility of E-beam recrystallization for three-dimensional IC application     

基于FPGA的电子束曝光机工件台控制器设计

基于激光干涉仪的精密工件台是电子束曝光机的关键设备。为了改进工件台控制器的运算速度．设计了一种基于FPGA的电子束曝光机工件台控制器。本控制器由上位机接口、激光干涉仪测量系统接口、电机控制接口、手动面板接口和主处理器组成,以美国Xilinx公司Spantan3系列的FPGA芯片XC3s400为核心。实现控制器与上位机、激光干涉仪测量系统、伺服驱动系统、手动控制面板之间的数据交换和指令传递。完成工件台的精确移动。满足电子束曝光的定位精度和拼接精度的要求。     

ZEP520正性电子抗蚀剂的工艺研究

详细研究了ZEP520在Si衬底上的对比度、灵敏度、分辨率，并分析了曝光剂量、抗蚀剂厚度对ZEP520线条和圆孔尺寸的影响；同时还初步研究了ZEP520在GaAs衬底上的曝光工艺。实验结果表明，ZEP520的灵敏度远高于PMMA，在Si和GaAs上用ZEP520能分别制作出100nm和130nm宽的细线条，通过预烘GaAs衬底，可以消除ZEP520中的裂纹，因此用ZEP520制作器件或电路中各种细小凹槽图形是十分有利的。     

基于SEM纳米级电子束曝光机的快速束闸设计

基于扫描电镜(SEM)的纳米级电子束曝光系统能够以较低成本满足科研单位对纳米加工设备的需求。在电子束曝光系统中,需要快速束闸控制电子束通断以实现纳米图像的多场曝光。从安装位置、机械结构和驱动器等方面讨论快速束闸的设计。     

Damage to insulated gate FETs by electron beam metrology and X-ray exposure

A comparison of the damage induced by X-rays and electron-beam radiation on IGFETs has been made. It is observed that the ratio of the threshold voltage shift due to fixed positive charge (ΔV _FPC) to the total threshold voltage shift (due to both fixed positive charge and neutral electron traps) does not show any dependence on the radiation dose in the case of an E-beam irradiation, and shows a negative slope for X-ray irradiated samples. This suggests that the amount of neutral electron traps (NETs) and fixed negative charge (FNC) produced by the ionizing radiation is higher in the case of X-ray irradiation and saturates at much higher doses compared to E-beam irradiation. A study of electron beam damage at various energies shows that E-beam energy of 7 keV does not damage the oxides at all whereas at lOkeV maximum damage is observed. For devices exposed to X-rays, the threshold voltage shift ratios due to the fixed positive charge for different gate oxide thicknesses (12·6nm-50·0nm) indicate a shift of the effective charge centre-id which also depends on the filling of neutral electron traps to form fixed negative charges that partially compensate the fixed positive charges. The threshold voltage shift ratios also indicate a shift in the charge centroid which is pronounced in the thinner oxides. A model for the change in effective centroid of charge and also its dose dependence for different oxide thicknesses has been suggested.     

Effect of in-line electron beam treatment on the electrical performance of Cu/organic low-k damascene interconnects

The interface quality and reliability issues have shown significant importance in Cu/organic low-k damascene integration. In this letter, a post-etch in-line electron beam (E-beam) treatment was used to modify the interface properties of sidewall barrier/organic low-k dielectric without impairing either the film properties or the dielectric constant. X-ray photoelectron spectroscopy (XPS) analysis indicated that oxygen content at the low-k surface, which mostly came from oxygen/moisture intake from ambient during process, was eliminated by E-beam exposure and subsequent rapid thermal annealing. As a result, Cu/organic low-k interconnects exhibited a lower line-to-line leakage current and a higher breakdown strength. The interconnect structures, after this in-line E-beam treatment process, also showed a good reliability performance against thermal stress, with good leakage current characteristics after a 500-h burn-in at 200/spl deg/C.     

电子束与光学混合制版技术在GaAs器件研制中的应用

介绍了用光学制版设备制作GaAs器件光刻中除栅条掩模版外的其它各层掩模版,用高分辨率电子束制版设备制作线宽≤0.5μm、并能与光学设备制作的各层掩模版精确套刻的栅条掩模版,即电子束与光学混合制版技术。对解决两类制版系统制作的掩模版精确互套的方法、干法刻蚀等工艺过程做了必要的阐述。