248nm光致抗蚀剂成膜树脂研究进展

光致抗蚀剂(photoresist)是制造超大规模集成电路的关键性材料之一,随着集成电路集成度的不断增加,光致抗蚀剂由g线(436nm)胶、i线(365nm)胶,逐渐发展到深紫外(DUV)(248nmKrF与193 nm ArF)胶。成膜树脂作为光致抗蚀剂的主要成分之一,决定了抗蚀剂的主要性能,因此研究成膜树脂具有重要的意义。本文综述了248 nm KrF光致抗蚀剂成膜树脂的研究进展,重点介绍了聚对羟基苯乙烯及其衍生物,并简要介绍了其合成方法及成像机理。     

面向21世纪的酸增殖辐射固化与成像技术

介绍了市村国宏教授率先在 20世纪 90年代末期提出的酸增殖 (Acid proliferation)、酸增殖源、酸增殖型光致抗蚀剂等新概念,列出了几种有用的酸增殖源及它们酸致产酸发生增殖反应的机理,讨论了酸增殖源在光致抗蚀剂 (特别是化学增幅抗蚀剂 )和计算机直接制版 (CTP)技术等方面的应用,说明这是一项在 21世纪有发展前景的成像技术——信息记录技术。     

ArF激光光致抗蚀剂的研究进展

本对近10年来有关ArF激光（193nm)光致抗蚀剂的研究开发情况进行了调研，对193nm光致抗蚀剂组成物的各个组分进行了归纳综述。从本可以看出，利用193nm成像技术可以刻画线幅很细（＜0.13μm）的图像，能适应信息技术的发展对于光致抗蚀剂高分辨率的要求。但若想将193nm成像技术在实践中推广应用，还有诸多问题需待研究解决。     

文摘选录

X-射线抗蚀材料Solid State Technology,23(5),73(1980) 本文分二个部分评述了4～14 X-射线刻蚀光致抗蚀剂的特性。在背景和一般讨论中主要叙述了X-射线刻蚀所需抗蚀剂的物理和化学性能。在实验部分叙述了:A.含金属的抗蚀剂、B.含卤素抗蚀剂、C.新型高速负性抗蚀剂、D.等离子体显影抗蚀剂等试验经过,附有扫描电镜图和示意图,颇为详尽。(水)     

HBT-G型光刻胶的研制

一、概况五十年代初,负性光致抗蚀剂——聚乙烯醇肉桂酸脂的问世,导致了电子工业特别是半导体工业的迅速发展。随着微细加工技术的进步,与其相适应的抗蚀剂和其它新材料一样应运而出。美国(Kodak)公司,1958年推出的双叠氮-环化橡胶系负性抗蚀剂,     

纳米压印抗蚀剂研究进展

纳米压印是最有希望的下一代纳米成像技术之一.基于其机械压印原理,纳米压印技术可以实现的图形分辨率超越了在别的传统技术中由光衍射或粒子束散射造成的局限.本文介绍纳米压印技术的基本原理,回顾了近期纳米压印抗蚀剂的研究进展.对影响抗蚀剂性能的主要因素进行讨论,包括玻璃化转化温度/热稳定性、粘度/平均分子量、抗蚀性能等.分别介绍了热压印和紫外压印的常见抗蚀剂材料,这些抗蚀剂的主要部分包括聚甲基丙烯酸甲酯（PM-MA）、有机硅改性的聚（甲基）丙烯酸酯、聚酰胺酯、聚二甲基硅烷、聚乙烯基醚化合物、环氧树脂等,并给出这些抗蚀剂体系的优、缺点.本文还介绍了纳米压印抗蚀剂面临的主要问题,对纳米压印技术的优势和问题作了小结.     

负性光致抗蚀剂HBT-G的研究

<正> 一、引言五十年代初,负性光致抗蚀剂——聚乙烯醇肉桂酸酯的问世,导致电子工业特别是半导体工业的迅速发展。随着微细加工技术的进步,与其相适应的抗蚀剂和其它新材料一样应运而出。美国柯达公司(Kodak)于1958年推出的双叠氮一环化橡胶系负性抗蚀剂,则是迄今众多抗蚀剂中的优良品种。由于它具有优异的抗蚀性能和良好的成膜粘附性加上具高感度和高解象力,因此近二十年来一直受到许多研究部门和生产厂家的关     

DUV光致抗蚀剂的研究进展Ⅱ——光产酸源、阻溶剂等添加剂部分

(续上期 )在DUV抗蚀剂中除第 1部分已介绍过的主体成膜高分子以外 ,产酸源、阻溶剂及其他一些添加剂也是抗蚀剂体系不可缺少的组分 ,对于抗蚀剂体系的成像性质有很大的影响。下面对其逐一进行介绍。2 2产酸源[72～ 73 ]产酸源是化学增幅抗蚀剂组成物中极为重要的组分。产酸源在DUV光的作用下产酸 ,催化曝光区树脂发生各种化学反应 ,形成潜影。在DUV光致抗蚀剂中的产酸源有 :硫盐、碘盐、三嗪类物质、磺酸酯类化合物、对甲苯磺酸衍生物、砜基重氮甲烷等。其中用得最多的是硫盐。通过研究可知 ,产酸源的结构、性质以及在体系中的含…     

酸增殖剂研究进展

本综述了能有效提高化学增幅抗蚀剂体系感度的各种类型酸增殖剂及其酸增殖机理．对某些常用于光致抗蚀剂中的酸增殖剂的特性作了介绍．并对它们的应用前景、现存问题和改进方向进行了简单讨论和介绍．     

化学增幅电子束抗蚀剂的研究概况

本文综述了近 10年来电子束化学增幅抗蚀剂的概况、主要组成、成像反应机理及电子束抗蚀剂的发展方向。     

金属基极紫外光刻胶

由于具有光源波长短（13.5 nm）、图案化分辨率高等优点,极紫外（extreme ultraviolet, EUV）光刻技术被认为是突破5 nm甚至是3 nm半导体芯片制程节点的关键技术,与之相对应的EUV光刻胶研发广受关注。但传统的基于聚合物体系的化学放大光刻胶（chemical amplified resist, CAR）因尺寸过大、对EUV吸收低,限制了其在EUV光刻技术的应用进程。部分含有d轨道电子的金属元素具有高的EUV吸收截面,在光刻胶分子中引入这些金属元素可以有效提高对EUV的灵敏度。通过分子设计制备尺寸小、EUV吸收高的金属基光刻胶材料是解决EUV光刻胶服役性能问题的有效途径,已得到了广泛的研究。本文按金属氧簇（MOCs）、金属氧化物纳米粒子（NP）、金属-有机小分子（MORE）进行分类,对目前国内外的EUV光刻胶研究进展进行总结,并对EUV光刻胶未来所面临的机遇和挑战进行了展望。     

金属基极紫外光刻胶

由于具有光源波长短（13.5 nm）、图案化分辨率高等优点,极紫外（extreme ultraviolet, EUV）光刻技术被认为是突破5 nm甚至是3 nm半导体芯片制程节点的关键技术,与之相对应的EUV光刻胶研发广受关注。但传统的基于聚合物体系的化学放大光刻胶（chemical amplified resist, CAR）因尺寸过大、对EUV吸收低,限制了其在EUV光刻技术的应用进程。部分含有d轨道电子的金属元素具有高的EUV吸收截面,在光刻胶分子中引入这些金属元素可以有效提高对EUV的灵敏度。通过分子设计制备尺寸小、EUV吸收高的金属基光刻胶材料是解决EUV光刻胶服役性能问题的有效途径,已得到了广泛的研究。本文按金属氧簇（MOCs）、金属氧化物纳米粒子（NP）、金属-有机小分子（MORE）进行分类,对目前国内外的EUV光刻胶研究进展进行总结,并对EUV光刻胶未来所面临的机遇和挑战进行了展望。     

Deep UV photolithographic systems and processes

Deep UV[200 to 300 nanometers (nm)] photolithography has received much recent attention because it promises higher resolution than conventional exposure technology. Except for the change in wavelength from the 400 nm region, the exposure technology would remain virtually unchanged. We will discuss resist materials and processes explored in the last few years for optimization of deep UV lithography. Particular emphasis is placed upon the chemistry of resist design, multilevel processing schemes, and new sources for deep UV exposure.     

先进光刻胶材料的研究进展

本文简述了光刻技术及光刻胶的发展过程,并对应用于193纳米光刻和下一代EUV光刻的光刻胶材料的研究进展进行了综述,特别对文献中EUV光刻胶材料的研发进行了较为详细的介绍,以期对我国先进光刻胶的研发工作有所帮助.     

用于浸没式工艺的光刻胶研究进展

浸没式光刻技术是在原干法光刻的基础上采用高折射率浸没液体取代原来空气的空间,从而提高光刻分辨率的一种先进技术.此项技术的实际应用,为当前IC产业的飞速发展起到了关键的作用.本文概述了浸没式光刻技术的发展历程和浸没式光刻胶遇到的挑战及要求;对浸没式光刻胶主体树脂、光致产酸剂及添加剂的研究进展进行了综述;最后对浸没式光刻胶的研究发展方向作了进一步的探讨及初步预测.     

Free-radical synthesis of narrow polydispersed 2-hydroxyethyl methacrylate-based tetrapolymers for dilute aqueous base developable negative photoresists

Novel (meth)acrylate tetrapolymers based on 2-hydroxyethyl methacrylate (HEMA) were synthesized via free-radical polymerization in refluxing xylene under monomer-starved conditions for use in negative photoresist formulations. 2,2′-Azobis(2-methylbutyronitrile) was used as initiator and 2-mercaptoethanol as chain transfer agent. Optimized resist formulations were obtained with a relatively narrow polydispersed (D=1.86) low molecular weight copolymer (M_n=1677) of 2-hydroxyethyl methacrylate (HEMA), isobornyl methacrylate (IBMA), cyclohexyl methacrylate (CHMA) and acrylic acid (AA), in a 40/30/23/7 weight ratio. A novel high-resolution single layer negative tone photoresist suitable for 193 nm and e-beam lithography that meets basic performance requirements (aqueous-base development, enhanced etch resistance, sub-0.2 μm resolution) was developed from the aforementioned (meth)acrylate tetrapolymer, the poly(2-hydroxyethyl methacrylate-co-cyclohexyl methacrylate-co-isobornyl methacrylate-co-acrylic acid) (PHECIMA) and a sulfonium salt photo acid generator. The key-components for the negative image formation (photoacid induced crosslinking) are the hydroxyl groups of the HEMA moieties. The swelling-free negative resist material was developed in diluted aqueous base [tetramethyl ammonium hydroxide, (TMAH) 0.26×10⁻²N] and presented enhanced etch resistance without the use of etch resistance promoters. 0.20-0.14 μm lines were obtained upon 193 nm and/or e-beam lithography.     

The effect of soft bake on adhesion property between SU‐8 photoresist and Ni substrate by molecular dynamics simulation

SU‐8 photoresist is a negative, epoxy‐type, near UV photoresist and is commonly used in micro electro mechanical systems (MEMS) and other thick resist application fields. However, poor adhesion strength between SU‐8 photoresist and metal substrate makes it difficult to bind, even contributes to the lithography failure. This significantly restricts the improvement of image resolution and depth‐to‐width ratio. As soft bake temperature and time are important for the interfacial adhesion property, in this article, molecular dynamics (MD) simulation was performed to investigate the effects of these two parameters on adhesion property between SU‐8 photoresist and Ni substrate. According to the adsorption theory, the simulation results were analyzed and validated by experiments. It is shown that with increasing soft bake temperature the adhesional work firstly increases and then decreases, and with increasing soft bake time the adhesional work decreases. This study provides theory basis for the confirmation of soft bake parameters. © 2012 Wiley Periodicals, Inc. J. Appl. Polym. Sci., 2013     

Design and synthesis of new photoresist materials for ArF lithography

A new class of photoresist matrix polymers based on vinyl ether–maleic anhydride (VEMA) alternating copolymers was developed for ArF single‐layer lithography. These polymers were synthesized by copolymerization of alkyl vinyl ether and maleic anhydride alternating copolymers with acrylate derivatives containing bulky alicyclic acid‐labile protecting groups. The resulting polymers showed good control of polymerization and high transmittance. Also, these resists exhibited good adhesion to the substrate, high dry‐etching resistance against CF₄ mixture gas (1.02 times the etching rate of deep UV resist), and high selectivity to silicon oxide etching. Using an ArF excimer laser exposure system with 0.6 NA, 120‐nm L/S patterns were resolved under conventional illumination. © 2004 Wiley Periodicals, Inc. J Appl Polym Sci 92: 165–170, 2004     

Nanopillar array with a λ/11 diameter fabricated by a kind of visible CW laser direct lithography system

Nanoscale functional structures are indispensable elements in many fields of modern science. In this paper, nanopillar array with a pillar diameter far smaller than Abbe''s diffraction limit is realized by a new kind of continuous wave (CW) laser direct lithography technology. With atomic force microscopy technology, the average diameter of nanopillars on thin OIR906 photoresist film is about 65 nm and the smallest diameter is 48 nm, which is about 1/11 of the incident laser wavelength. Also, the influences of coma and astigmatism effects to the shape and size of nanopillar are numerically simulated by utilizing vector integral. As far as we know, it is the first time that nanopillar array is implemented by a donut-shaped 532-nm visible CW laser. The study presents a new, simple, inexpensive, and effective approach for nanopillar/pore array fabrication.