Electrical and interfacial properties of Au/P3HT:PCBM/n-Si Schottky barrier diodes at room temperature

In this study, a gold/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester/n-type silicon (Au/P3HT:PCBM/n-Si) metal-polymer-semiconductor (MPS) Schottky barrier diode (SBD) was fabricated. To accomplish this, a spin-coating system and a thermal evaporation were used for preparation of a P3HT/PCBM layer system and for deposition of metal contacts, respectively. The forward- and reverse-bias current–voltage (I–V) characteristics of the MPS SBD at room temperature were studied to investigate its main electrical parameters such as ideality factor (n), barrier height (Φ_B), series resistance (R_s), shunt resistance (R_sh), and density of interface states (N_ss). The I–V characteristics have nonlinear behavior due to the effect of R_s, resulting in an n value (3.09) larger than unity. Additionally, it was found that n, Φ_B, R_s, R_sh, and N_ss have strong correlation with the applied bias. All results suggest that the P3HT/PCBM interfacial organic layer affects the Au/P3HT:PCBM/n-Si MPS SBD, and that R_s and N_ss are the main electrical parameters that affect the Au/P3HT:PCBM/n-Si MPS SBD. Furthermore, a lower N_ss compared with that of other types of MPS SBDs in the literature was achieved by using the P3HT/PCBM layer. This lowering shows that high-quality electronic and optoelectronic devices may be fabricated by using the Au/P3HT:PCBM/n-Si MPS SBD.     

Effect of fullerene doping on the electrical properties of P3HT/PCBM layers

Poly (3-hexylthiophene-2, 5-diyl) (P3HT) and its blend with Phenyl-C₆₁-Butyric acid-Methyl-Ester (PCBM) and fullerene (C₆₀) thin films were prepared and their electrical properties for memory applications were studied. Due to doping, a sharp decrease in the resistance for a P3HT:PCBM:C₆₀ device was observed at around 70 °C which makes it useful for thermal switching applications. Addition of C₆₀ to P3HT:PCBM blend gave a high value for R_RESET/R_SET in thermal switching. For bias switching, threshold voltage reduces to 1.4 V from 25 V with the addition of C₆₀ to P3HT layer.     

Performance improvement mechanisms of P3HT:PCBM inverted polymer solar cells using extra PCBM and extra P3HT interfacial layers

A novel P3HT:PCBM inverted polymer solar cell (IPSC) was fabricated and investigated. An extra PCBM and an extra P3HT interfacial layers were inserted into the bottom side and the top side of the P3HT:PCBM absorption layer of the IPSCs to respectively enhance electron transport and hole transport to the corresponding electrodes. According to the surface energy, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) measurement results, the extra PCBM interfacial layer could let more P3HT to form on the top side of the P3HT:PCBM blends. It revealed that the non-continuous pathways of P3HT in the P3HT:PCBM absorption layer could be reduced. Consequently, the carrier recombination centers were reduced in the absorption layer of IPSCs. The power conversion efficiency (PCE) of the P3HT:PCBM IPSCs with an extra PCBM interfacial layer greatly increased from 3.39% to 4.50% in comparison to the P3HT:PCBM IPSCs without an extra PCBM interfacial layer. Moreover, the performance of the P3HT:PCBM IPSCs with an extra PCBM interfacial layer could be improved by inserting an extra P3HT interfacial layer between the absorption layer and the MoO₃ layer. The PCE of the resulting IPSCs increased from 4.50% to 4.97%.     

A thermodynamic and kinetic description of PCBM phase segregation and aggregation in P3HT:PCBM blends

The kinetics and thermodynamics of PCBM phase segregation and aggregation in P3HT:PCBM blends has been studied. We develop a thermodynamic model for PCBM phase segregation in P3HT:PCBM blends which explains the formation of nanoscale crystallites which subsequently diffuse and coalesce into larger PCBM aggregates. We show that the formation of nanoscale crystallites during the film making process prevents spinodal decomposition of the P3HT:PCBM blends even at PCBM weight fractions above the spinodal decomposition boundary for the system. Finally, we demonstrate that the observed aggregate morphology can be understood in terms of a kinetic model based on the diffusional flux lines of PCBM crystallite which, in turn, govern the evolution of the macroscopic growth front.     

A new model for PCBM phase segregation in P3HT:PCBM blends

The phase segregation in P3HT:PCBM blend films has been investigated from an experimental and theoretical viewpoint. Optical microscopy, atomic force microscopy, scanning electron microscopy and X-ray diffraction show that thermal annealing of P3HT:PCBM blend films leads to the formation of PCBM aggregates. These aggregates are composed of dense randomly packed ∼50 nm PCBM crystallites with an overall aggregate density of ∼0.85 g cm⁻³. By applying the critical radius of nucleation for PCBM and the Stokes-Einstein equation for mobility of PCBM in a P3HT matrix, a model is developed which explains the formation of both crystallites and aggregates.     

Effect of annealing temperature on the electrical characteristics of Platinum/4H-SiC Schottky barrier diodes

Pt/4H-SiC Schottky barrier diodes have been fabricated to investigate the effect of annealing on the electrical characteristics of the fabricated devices. The parameters such as barrier height, ideality factor and donor concentration were deduced from the current–voltage (I–V) and the capacitance–voltage (C–V) measurements at room temperature. Diodes showed non-ideal behaviour like high value of ideality factor and lower value of barrier height. A barrier height of 1.82?eV was obtained from C–V measurements and it was 1.07?eV when obtained from the I–V measurements with ideality factor 1.71 for as-deposited diodes at room temperature. The diodes, therefore, were annealed in the temperature range from 25°C to 400°C to observe the effect of annealing temperature on these parameters. Schottky barrier height and ideality factors were found to be temperature-dependent. After rapid thermal annealing upto 400°C, a barrier height of 1.59?eV from C–V measurements and the value of 1.40?eV from I–V measurements with ideality factor 1.12 were obtained. Barrier heights deduced from C–V measurements were consistently larger than those obtained from I–V measurements. To come to terms with this discrepancy, we re-examined our results by including the effect of ideality factor in the expression of the barrier height. This inclusion of ideality factor results in reasonably good agreement between the values of barrier height deduced by the above two methods. We believe that these improvements in the electrical parameters result from the improvement in the quality of interfacial layer.     

Barrier height and ideality factor dependency on identically produced small Au/p-Si Schottky barrier diodes

Small high-quality Au/P-Si Schottky barrier diodes (SBDs) with an extremely low reverse leakage current using wet lithography were produced. Their effective barrier heights (BHs) and ideality factors from current-voltage (Ⅰ-Ⅴ) characteristics were measured by a conducting probe atomic force microscope (C-AFM). In spite of the identical preparation of the diodes there was a diode-to-diode variation in ideality factor and barrier height parameters. By ex-trapolating the plots the built in potential of the Au/p-Si contact was obtained as Vbi = 0.5425 V and the barrier height value φB(C-V) was calculated to be φB(C-V) = 0.7145 V for Au/p-Si. It is found that for the diodes with diameters smaller than 100 μm, the diode barrier height and ideality factor dependency to their diameters and correlation between the diode barrier height and its ideality factor are nonlinear, where similar to the earlier reported different metal semi-conductor diodes in the literature, these parameters for the here manufactured diodes with diameters more than 100μm are also linear. Based on the very obvious sub-nanometer C-AFM produced pictures the scientific evidence behind this controversy is also explained.     

Barrier height and ideality factor dependency on identically produced small Au/p-Si Schottky barrier diodes

Small high-quality Au/P-Si Schottky barrier diodes (SBDs) with extremely low reverse leakage current using wet lithography were produced. Their effective barrier heights (BHs) and ideality factors from current–voltage (I-V) characteristics were measured by a conducting probe atomic force microscope (C-AFM). In spite of identical preparation of the diodes there was a diode-to-diode variation in ideality factor and barrier height Parameters. By extrapolating of the plots the built in potential of the Au /p-Si contact was obtained as Vbi=0.5425 V and the barrier height value (ФB(C-V)) was calculated to be ФB(C-V)=0.7145 V for Au/p-Si. It is found that for the diodes with diameters smaller than 100 µm the diode barrier height and ideality factor dependency to their diameters and correlation between the diode barrier height and its ideality factor are nonlinear, where similar to the earlier reported different metal semiconductor diodes in the literature, these parameters for the here manufactured diodes with diameters more than 100 µm are also linear. Based on the very obvious sub-nanometer C-AFM produced pictures the scientific evidence behind this controversy is also explained.     

Light-induced electron spin resonance study of galvinoxyl-doped P3HT/PCBM bulk heterojunctions

We report the effects of doping of P3HT/PCBM layers with spin 1/2 radicals of galvinoxyl (Gx) based on light-induced electron spin resonance (LESR), photoluminescence-detected magnetic resonance (PLDMR), and post-annealing experiments.LESR showed both a P3HT⁺ and PCBM⁻ signal for undoped P3HT/PCBM; however, as Gx doping increased (above ∼1 wt%), only the P3HT⁺ signal was evident in the LESR spectra, with no PCBM⁻ signal.The PLDMR exhibited a strong narrow signal at g = 2.002 that originates from nongeminate polaron pairs; no triplet PLDMR signal has been observed throughout the whole range of Gx concentrations (x = 0, 0.1, 1, 2, 4, 12 wt%). Adding Gx to ∼3 wt% led to a decrease of the PL-enhancement.There was big difference between the slow-dried P3HT/PCBM samples and the post-annealed samples. For the slow-dried samples, efficiency monotonously decreased with Gx additives. When post-annealed, however, an enhancement in η was observed at ∼2 wt% for P3HT/PCBM(1:2) samples.The LESR spectra for post-annealed samples revealed disappearance of Gx spin signals, and thus no spin interactions with PCBM⁻ spins. It is unlikely that the increase of efficiency after Gx doping of P3HT/PCBM solar cell is due to an increase of triplet states.     

Flexible solar cells based on PCBM/P3HT heterojunction

[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) / poly (3-hexylthiophene) (P3HT) heterojunction has not only the absorption in ultraviolet light for PCBM,but also the absorption in visible light for P3HT, which widens the incident light harvest range, improving the photoelectrical response of hybrid solar cell effectively.Using conducting polymers blend heterojunetion consisting of C60 derivatives PCBM and P3HT as charge carrier transferring medium to replace I3-/I- redox electrolyte and dye, a novel flexible solar cell was fabricated in this study.The influence of PCBM/P3HT mass ratio on the photovoltaic performance of the solar cell was also studied.flexible solar cell achieved a light-to-electric energy conversion efficiency of 1.04%, an open circuit voltage fill factor (FF) of 0.46.     

Ultraviolet photodetectors based on low temperature processed ZnO/PEDOT:PSS Schottky barrier diodes

In this work, vertical Schottky barrier diodes (SBDs) were fabricated using a thin film of ZnO (50 nm) and PEDOT:PSS deposited by RF Sputtering and micro-drop casting, respectively. ITO and Au were used as ohmic contacts to ZnO and PEDOT:PSS films, respectively. The final structure consisted on Glass/ITO/ZnO/PEDOT:PSS/Au. The SBDs performance was characterized under dark and four different wavelengths conditions. From current–voltage characteristics, under dark and ambient conditions, a diode ideality factor of 1.4; a saturation current density of 1×10⁻⁹ A/cm²; a Schottky barrier height of 0.9 eV and a rectification ratio of 5 orders of magnitude at ±1 V were obtained. A carrier density of 5×10¹⁷ cm⁻³ for the ZnO film was estimated from capacitance–voltage measurements. For their characterization as photodiodes, the SBDs were illuminated with an ultra-bright UV (~380 nm) LED. A maximum UV responsivity of 0.013 A/W was obtained. The transient response of the SBDs was also analyzed with the UV LED connected to a pulsed signal of 0.5 Hz, demonstrating rise and fall times in the order of 200 ms. With a low temperature processing (<80 °C), visible-blind and UV photon-detection characteristics, the fabricated SBDs are candidates for flexible optoelectronics devices such as optical receivers for digital signal processing and measurement of light intensity.     

Stabilization of poly(3-hexylthiophene)/PCBM morphology by hydroxyl group end-functionalized P3HT and its application to polymer solar cells

A new concept to stabilize the morphology of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C₆₁-butyric acid methyl ester (PCBM) blend through H-bond formation by using a hydroxyl group end-functionalized P3HT (HOC-P3HT-COH) as a compatibilizer is presented. Domain size of the PCBM crystals in the annealed P3HT/PCBM film is diminished with addition of HOC-P3HT-COH. Surface roughness of the P3HT/PCBM film also becomes smoother with addition of HOC-P3HT-COH. Thermal stability of solar cell device is improved significantly through the H-bond formation between HOC-P3HT-COH and PCBM. A high performance and thermal stable polymer solar cell with 4.06% power conversion efficiency under AM1.5G irradiation is fabricated with 5% HOC-P3HT-COH in P3HT/PCBM layer.     

The determination of the interface-state density distribution from the capacitance-frequency measurements in Au/n-Si schottky barrier diodes

The Au/n-Si Schottky barrier diodes (SBDs) with 200-μm (sample D200) and 400-μm (sample D400) bulk thicknesses have been fabricated. The ideality factor and the barrier height have been calculated from the forward-bias current-voltage (I-V) characteristics of D200 and D400 SBDs. The energy distribution of the interface states and relaxation time are found from the capacitance-frequency (C-f) characteristics. The density of interface state and relaxation times have a (nearly constant) slow exponential rise with bias in the range of E_c −0.77 and E_c −0.47 eV from the midgap toward the bottom of the conductance band. Furthermore, the energy distribution of the interface states obtained from C-f characteristics has been compared with that obtained from the forward-bias I-V characteristics.     

Temperature-dependence of barrier height of swift heavy ion irradiated Au/n-Si Schottky structure

The electrical characteristics of swift heavy ion (SHI) irradiated Au/n-Si (1 0 0) structure has been investigated in a wide temperature range (50–300 K). The forward bias current–voltage (I–V) measurements have been used to extract the diode parameters as a function of temperature. The Zero-bias Schottky barrier height decreases with decreasing temperature. However, the flat-band barrier height is almost independent of the temperature. These results are interpreted using the models of Fermi level pinning. The behavior of Schottky diode parameters is explained by taking into account the role of the irradiation induced defects at Au/n-Si (1 0 0) interface.     

Effects of incorporation of copper sulfide nanocrystals on the performance of P3HT: PCBM based inverted solar cells

It has been reported that performance of bulk heterojunction organic solar cells can be improved by incorporation of an additive like metal and semiconducting nanoparticles in the active layer. Here in, we have synthesized Cu₂S nanocrystals (NCs) by chemical route and studied its dispersion in poly (3-hexylthiophene) [6, 6]-phenyl C61-butyric acid methyl ester (P3HT: PCBM) matrix. Variation in the performance parameters with change in the concentration of Cu₂S NCs into the P3HT: PCBM matrix has also been studied and it was found that the inverted geometry device with concentration of 20 wt% of Cu₂S NCs and having the structure ITO/ZnO (NPs)/P3HT: PCBM:Cu₂S NCs/MoO₃/Al has shown maximum efficiency of 3.39% which is more than 100% increase in comparison with devices without Cu₂S NCs. Photoluminescence measurements studies unveiled that the incorporation of Cu₂S NCs into a P3HT: PCBM matrix has helped in quenching photoluminescence which suggests more effective exciton dissociation at the interfaces between the P3HT and PCBM domains. The Nyquist plots obtained from impedance spectroscopy at 1 V bias in the dark has suggested the effective lifetime and global mobilities for P3HT: PCBM as 0.267 ms and 1.17 × 10⁻³ cm²/V-S and for P3HT: PCBM:Cu₂S NCs (20 wt%) systems as 0.156 ms and 2.02 × 10⁻³ cm²/V-S respectively. Based on observed photoluminescence quenching, calculated effective lifetime and global mobility, we have tried to explain the possible reason for improvement in the efficiency with the very well dispersion of Cu₂S NCs into the P3HT: PCBM matrix.     

The effect of Ti:W barrier metal on characteristics of palladium-silicide Schottky barrier diodes

The values of diode-quality factor and reverse-current leakage of Au/Pd/Ti:W/Pd₂Si/nSi unguarded Schottky barrier diodes are much higher than expected from silicide/silicon junction-radius induced highfield effects. Experimental Ti-, W-, and Ti:W-MIS structures were built and tested to show that Ti is responsible for the formation of a parasitic Ti-MIS structure around the unguarded-diode perimeter. This parasitic structure is responsible for excessive current leakage and also for an additional unguarded-diode degradation induced by annealing at 400 °C.     

退火方式及PCBM阴极修饰层对聚合物太阳电池的影响

研究了不同退火方式及PCBM阴极修饰层对聚合物太阳电池性能的影响。与前退火相比,后退火的器件性能显著提高,电池的开路电压Voc由0.36V增加到0.60V,能量转换效率η从0.85%提高到1.93%,短路电流密度Jsc和填充因子FF也有不同程度的改善;在电池的活性层与Al电极间沉积一定厚度的PCBM阴极修饰层也能改善电池的性能,当PCBM厚度为3nm时,聚合物太阳电池在100mW.cm-2强度光照下,Voc为0.59V,Jsc为6.43mA.cm-2,FF为55.1%,η为2.09%。     

A detailed comparative study on the main electrical parameters of Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes

We have fabricated Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes (SBDs) to investigate the effect of organic interfacial layer on the main electrical characteristics. Zn doped poly(vinyl alcohol) (PVA:Zn) was successfully deposited on n-Si substrate by using the electrospinning system and surface morphology of PVA:Zn was presented by SEM images. The current–voltage (I–V) characteristics of these SBDs have been investigated at room temperature. The experimental results show that interfacial layer enhances the device performance in terms of ideality factor (n), zero-bias barrier height (Φ_B0), series resistance (R_s), and shunt resistance (R_sh) with values of 1.38, 0.75 eV, 97.64 Ω, and 203 MΩ whereas those of Au/n-Si SBD are found as 1.65, 0.62 eV, 164.15 Ω and 0.597 MΩ, respectively. Also, this interfacial layer at metal/semiconductor (M/S) interface leads to a decrease in the magnitude of leakage current and density of interface states (N_ss). The values of N_ss range from 1.36×10¹² at E_c—0.569 eV to 1.35×10¹³ eV^?1 cm^?2 at E_c—0.387 eV for Au/PVA:Zn/n-Si SBD and 3.34×10¹² at E_c—0.560 eV to 1.35×10¹³ eV^?1 cm^?2 at E_c—0.424 eV for Au/n-Si SBD. The analysis of experimental results reveals that the existence of PVA:Zn interfacial layer improves the performance of such devices.     

Modular construction of P3HT/PCBM planar-heterojunction solar cells by lamination allows elucidation of processing–structure–function relationships

Contrary to polymer solar cells with bulk-heterojunction active layers, devices with planar-heterojunction active layers allow the decoupling of active layer phase separation from constituent crystallization, and their relative influence on device performance. We fabricated planar-heterojunction devices by first processing the electron donor and electron acceptor in isolation; they were subsequently laminated across the donor–acceptor interface to establish electrical contact. Thermal annealing was intentionally avoided after lamination to maintain the pristine charge transfer interface. Lamination thus obviates the need for solvent orthogonality; more importantly, it provides independent process tuning of individual organic semiconductor layers, ultimately allowing control over constituent structural development. We found the short-circuit current density of planar-heterojunction solar cells comprising poly(3-hexyl thiophene), P3HT, and [6,6]-phenyl-C₆₁-butyric acid methyl ester, PCBM, as the electron donor and acceptor, respectively, to be generally independent of the annealing history of P3HT. On the contrary, thermal annealing PCBM prior to lamination mainly led to a reduction in short-circuit current density. This deterioration is correlated with the development of preferentially oriented PCBM crystals that hinders electron transport in the vertical direction.     

Influence of Al2O3 barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures

The Au/Ti/n-GaAs structures with and without Al₂O₃ interfacial layer have been fabricated.The Al₂O₃ interfacial layer has been formed on the GaAs substrate by atomic layer deposition.The effects of the interfacial layer on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the devices have been investigated in the temperature range of 60-300 K.It has been seen that the carrier concentration from C-V characteristics for the MIS (metal/insulating layer/semiconductor) diode with Al₂O₃ interfacial layer has a higher value than that for the reference diode without the Al₂O₃ interfacial layer (MS).Such a difference in the doping concentration has been attributed not to doping variation in the semiconductor bulk but to the presence of the Al₂O₃ interfacial layer because both diodes have been made on the pieces cut from the same n-type GaAs wafer.The temperaturedependent I-V characteristics of the MIS diode do not obey the thermionic emission current theory because of the presence of the Al₂O₃ layer.An electron tunneling factor,aδ(χ)^1/2,value of 20.64 has been found from the I-V-T data of the MIS diode.An average value of 0.627 eV for the mean tunneling barrier height,χ,presented by the Al₂O₃ layer has been obtained.