共查询到20条相似文献,搜索用时 15 毫秒
1.
利用深层掩埋Ti-W自加热结构产生了沿金属化条长方向的温度梯度,通过电阻测温法精确测定实验条上的温度分布,从电迁徙平均失效时间、SEM分析等角度,研究了温度梯度对电迁徙的影响。实验发现,选择合适的工艺条件可保证电阻测温法的稳定性;温度梯度的不同取向对电迁徙平均失效时间存在较大影响,逆向温度梯度可极大地提高金属化的抗电迁徙寿命。 相似文献
2.
Nam-Hoon Kim Sang-Yong Kim Woo-Sun Lee Eui-Goo Chang 《Microelectronic Engineering》2007,84(11):2663-2668
In order to improve the interconnect performance, copper has been used as the interconnect material instead of aluminum. One of the advantages of using copper interconnects instead of aluminum is better electromigration (EM) performance and lower resistance for ultralarge-scale integrated (ULSI) circuits. Dual-damascene processes use different approaches at the via bottom for lowering the via resistance. In this study, the effect of a Ta/TaN diffusion barrier on the reliability and on the electrical performance of copper dual-damascene interconnects was investigated. A higher EM performance in copper dual-damascene structures was obtained in barrier contact via (BCV) interconnect structures with a Ta/TaN barrier layer, while a lower EM performance was observed in direct contact via (DCV) interconnect structures with a bottomless process, although DCV structures had lower via resistance compared to BCV structures. The EM failures in BCV interconnect structures were formed at the via, while those in DCV interconnect structures were formed in the copper line. The existence of a barrier layer at the via bottom was related to the difference of EM failure modes. It was confirmed that the difference in EM characteristics was explained to be due to the fact that the barrier layer at the via bottom enhanced the back stress in the copper line. 相似文献
3.
半导体器件金属化与接触可靠性的改善 总被引:1,自引:0,他引:1
描述了目前采用的界面效应合金效应,覆盖效应和回流效应等四种提高半导体器件金属化和接触可靠性的方法及其特点。介绍了最新研究成果,展望了其应用前景。 相似文献
4.
The electromigration (EM) that occurs in a Cu/Sn-9Zn/Cu lamella was investigated for hillock formation at room temperature
with a current density of 103 A/cm2 for up to 230 h. Hillocks and cavities grew in the middle of the bulk solder and at the cathode, respectively. The formation
of hillocks was ascribed to a compressive stress resulting from the diffusion of Sn atoms driven by electromigration and Cu-Zn
compound formation. 相似文献
5.
《Microelectronics Reliability》2015,55(8):1205-1213
An accurate knowledge of the phenomenon is required to develop a predictive modeling of the electromigration failure. Thus, a hitherto unseen SEM in operando observation method is devised. The test structure with “high density” through silicon vias (TSV) is tested at 623 K with an injected current density of 1 MA/cm2. Regular shots of micrographs inform about the voids nucleation, forced in copper lines above the TSV, and about the scenario of their evolution. A clear relation is established between voids evolution and the one of the electrical resistance. The lack of impact of test conditions on the failure mechanism is demonstrated. Finally, the impact of microstructure on the depletion mechanism is discussed. Grain boundaries are preferential voids nucleation sites and influence the voids evolution. A probable effect of grain size and crystallographic orientation is revealed. 相似文献
6.
The electromigration that occurs in a Cu/Sn-9Zn/Cu sandwich was investigated for void formation at room temperature with 103 A/cm2. A focused ion beam revealed that voids nucleated at the intermetallic compound (IMC)/solder interface regardless of the
electron flow direction. The needle-like voids initiated at the cathode Cu5Zn8/solder interface due to the outward diffusion of Zn atoms in the Zn-rich phase and expanded as a result of the surface diffusion
of Sn atoms upon current stressing. 相似文献
7.
《Microelectronics Reliability》2015,55(8):1196-1204
An electrical four-point probing approach is used to estimate local degradation in high power insulated gate bipolar transistor modules subjected to power cycling. By measuring electrical parameters of selected units and components the possibility of mapping the degradation is demonstrated. The development of failures is put in accordance with physical phenomena and materials fatigue. These results are directly usable for reliability purposes with a focus on geometry optimization and enhanced lifetime prediction methods. 相似文献
8.
Tatsuya Takeshita Mitsuru Sugo Teruhiko Nishiya Ryuzou Iga Mitsuo Fukuda Yoshio Itaya 《Microelectronics Reliability》1998,38(6-8)
Facet degradation mechanisms of a 980-nm InGaAs/GaAs strained-quantum well laser are analyzed by monitoring the optical-beam induced current. It is clarified that the behavior of defects around the facets govern the long-term stability as well as catastrophic-optical damage generation during operation. 相似文献
9.
Studies on further IC development mutually predict that the reliability of future integrated circuits (ICs) will be severely endangered by the occurrence of electromigration (EM). The reason for the increasing number of EM damages are the ongoing structural reductions in the IC. Digital circuits are particularly at risk because they have been neglected in the consideration of EM, resulting in a lack of suitable EM measures. For this reason, a paradigm shift in physical design must be accomplished, complementing the traditional EM verification step after layout creation with a proactive EM-robust physical synthesis. This work presents the necessary adaptations and new approaches by modifying the routing step of digital circuits, resulting in an EM-robust routing result. Our contribution includes the development of EM models, the derivation of EM-suppressing measures, and finally the consideration of these countermeasures in an EM-robust routing process. In summary, our work is an important contribution to increase the EM robustness in digital layouts, thereby ensuring the reliability of future ICs. 相似文献
10.
Electromigration phenomena in a one-dimensional Cu/SnAg3.0Cu0.5/Cu joint were investigated with current stressing. The special effect of intermetallic compound (IMC) layers on the formation
of serious electromigration damage induced by nonuniform current density distribution was discussed based on experimental
results. Meanwhile, hillocks were observed both at the anode and near the cathode of the joint, and they were described as
the result of diffusion of atoms and compressive stress released along grain boundaries to the relatively free surface. Moreover,
the diffusion behavior of Cu at the cathode was analyzed with the electromigration equation, and the stability of Ag atoms
in the solder during electromigration was evaluated with a first-principles method. 相似文献
11.
The effects of current stressing at 104 A/cm2 on Cu/42Sn-58Bi/Cu reaction couples with a one-dimensional structure at 23°C, 50°C, and 114°C were investigated. The microstructural
evolution during electromigration was examined using scanning electron microscopy. The temperature dependence of the coarsening
of the Bi-rich phase, the dominant migrating entity, and hillock/whisker formation in eutectic Sn-Bi were investigated under
high current density. During current stressing at 104 A/cm2, the average size of the Bi-rich phase remained the same at 23°C, increased at 50°C, and shrank at 140°C. Bi accumulated
near the anode side at both high (50°C, 140°C) and low temperature (23°C). At high temperatures, both Sn and Bi diffused towards
the anode side, but Bi moved ahead of Sn during current stressing. However, at low temperatures, Sn reversed its direction
of migration to the cathode side. Pure Bi hillocks/whiskers and a mixed structure of Sn and Bi hillocks were extruded as a
consequence of compressive stress from electromigration- induced mass flow towards the anode side. 相似文献
12.
13.
R. F. Schnabel L. A. Clevenger G. Costrini D. M. Dobuzinsky R. Filippi J. Gambino G. Y. Lee R. C. Iggulden C. Lin Z. G. Lu X. J. Ning R. Ramachandran M. Ronay D. T bben S. J. Weber 《Microelectronic Engineering》2000,50(1-4):265-270
This paper presents an overview of issues associated with Al dual damascene process technology. Different integration schemes are discussed and characteristics of metal fill, planarization and reliability are highlighted. Finally, a comparison is made between Al dual damascene, Al RIE, and Cu dual damascene. 相似文献
14.
15.
Electromigration (EM) in thin Al and Al/Si resistors was investigated by measuring the effect of the stress on the resistance,
the temperature coefficientα, the low-frequency noise spectrum (20 mHz-1 Hz) and, for some Al samples, on the residual resistance atT = 11 K. It was found that the temperature coefficient variations versus the stress time have a different behavior for Al
and Al/Si, that is an oscillation in the first part of the life of the sample and decreases in the last one, in the first
case, whereas, in the second, only the oscillation was detected. This behavior, observed for the first time, has been modeled
by means of the Mayadas theory, by supposing a Gaussian distribution of the reflection coefficient for electrons at the grain
boundaries. The measurement of the residual resistance also supports the hypothesis that the behavior ofa andR
o (the resistance value at 273 K) is mainly due to the modification of the grain-boundary structure and cannot be explained
by taking in account only the variation of the residual resistivity. Besides, the noise measurements give a further proof
that the origin of the 1/fg spectra in thin films subjected to high current density must be ascribed to phenomena occurring
at the grain-boundaries which are correlated to the phenomena causing temperature coefficient variations.
This work was supported by the Progetto Finalizzato MADESS, CNR, Italy. 相似文献
16.
In this study, the different electromigration (EM) behaviors of eutectic Sn-Bi solder in the solid and molten states were
clarified using line-type Cu/Sn-Bi/Cu solder joints. When the eutectic Sn-Bi solder was in the solid state during the EM test,
a Bi-rich layer formed at the anode side while a Sn-rich band formed at the cathode side, and the intermetallic compound (IMC)
at the cathode side was thicker than that at the anode side. The growth of the Bi-rich layer exhibited a linear dependence
on the time of stressing. While the actual temperature of the solder joint increased to 140°C and the solder was in a molten
state or partially molten state, two separate Bi-rich layers formed at the anode side and a great many Cu6Sn5 IMC precipitates formed between the two Bi-rich layers. Also, the IMC layer at the cathode side was thinner than that at
the anode side. With a current-crowding-reduced structure, the products of diffusivity and effective charge number of Bi in
the eutectic Cu/Sn-Bi/Cu solder joints stressed with current density of 5 × 103 A/cm2 at 35°C, 55°C, and 75°C were calculated. 相似文献
17.
《Microelectronics Reliability》2015,55(5):799-806
Blackening induced lumen decay in a QFN LED after WHTOL reliability test was reported and analyzed in this paper. A new LED blackening failure mechanism was proposed based on solid experimental results. We concluded that the failure process underwent delamination between lead frame and reflector polymer composites followed by chemical penetration, composite corrosion, silver migration, and finally caused blackening failure. Delamination and corrosive de-flash agent were the key factors for the failure mode. Besides, we also estimated the influence of the failure to the optical performance through simulation. Apart from other reported factors, this study highlighted that both composite corrosion and Ag migration could generate serious illumination decrease as well. The outcome of this study is valuable for LED manufacture and quality control in the future. 相似文献
18.
19.
Self-heating in AlGaN/GaN (GaN—gallium nitride) heterostructures is an important issue for a large use of these devices in high-density power telecommunication applications. The equation of heat associated with this type of problem does not admit an analytical solution. Hence, we propose a numerical solution based on the use of a transmission line matrix (TLM). The method is easy to program and gives insights on temperature distribution throughout the device. It allows a better understanding of heat behavior and management at each layer that forms the structure. Some TLM simulation results have been compared with those obtained experimentally using integrated micro-Raman/infrared (IR) thermography methods, and have been found to agree within the bounds set by the resolution of the meshes used. The TLM has also the advantage upon other numerical methods of being unconditionally stable, one step and can adapt to complex geometries such as devices with several fingers. 相似文献
20.
Z. M. Wang S. L. Feng Z. D. Lu Q. Zhao X. P. Yang Z. G. Chen Z. Y. Xu H. Z. Zheng 《Journal of Electronic Materials》1998,27(2):59-61
We investigate the annealing behavior of InAs layers with different thicknesses in a GaAs matrix. The diffusion enhancement
by strain, which is well established in strained quantum wells, occurs in InAs/GaAs quantum dots (QDs). A shift of the QD
luminescence peak toward higher energies results from this enhanced diffusion. In the case of structures where a significant
portion of the strain is relaxed by dislocations, the interdiffusion becomes negligible, and there is a propensity to generate
additional dislocations. This results in a decrease of the QD luminescence intensity, and the QD peak energy is weakly affected. 相似文献