Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse

Self-heating of high-voltage (6 kV class) 4H-SiC rectifier p⁺–n–n⁺ diodes under the action of a single 20 μs forward current surge pulse has been studied experimentally up to current densities j ≈ 100 kA/cm². The diode parameters are stable after a single surge pulse with current density j ≈ 60 kА/cm², although the estimated temperature of the diode at the end of this pulse is ～1650 K. After several pulses of this amplitude or after subjecting the diode to pulses with higher current density, the diode degrades. The degradation is manifested in an irreversible decrease of the differential resistance of the diode under a high forward bias. Even a single 20 μs pulse with peak current density j ≈ 100 kA/cm² leads to total destruction of the device.     

Organic light-emitting diodes based on an ambipolar single crystal

Slice-like organic single crystals of 1,4-bis(2-cyano-2-phenylethenyl)benzene (BCPEB) are grown by the physical vapor transport (PVT) method, and exhibit a very high photoluminescence quantum efficiency (Φ_PL) of 75%. The ambipolar behavior of BCPEB single crystals are confirmed using the time of flight technique. The high efficiency and balanced (μ_h = 0.059 cm²/Vs and μ_e = 0.070 cm²/Vs) carriers’ mobility imply that the BCPEB single crystal is a promising light-emitting layer in the diodes structure. Intense green electroluminescence (EL) from a diode has been successfully demonstrated at an applied electric field of 2 × 10⁵ V/cm.     

Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors

Silicon on insulator (SOI) substrates offer a promising platform for monolithic high energy physics detectors with integrated read-out electronics and pixel diodes. This paper describes the fabrication and characterisation of specially-configured SOI substrates using improved bonded wafer ion split and grind/polish technologies. The crucial interface between the high resistivity handle silicon and the SOI buried oxide has been characterised using both pixel diodes and circular geometry MOS transistors. Pixel diode breakdown voltages were typically greater than 100 V and average leakage current densities at 70 V were only 55 nA/cm². MOS transistors subjected to 24 GeV proton irradiation showed an increased SOI buried oxide trapped charge of only 3.45 × 10¹¹ cm^?2 for a dose of 2.7 Mrad.     

Gravure printed organic rectifying diodes operating at high frequencies

Organic rectifier diodes operating at 10 MHz made using roll-to-roll compatible mass printing processes to define patterns and deposit inks are reported. The diodes consist of a layer of poly(triarylamine) sandwiched between layers of silver and copper. No high resolution prepatterning of any surfaces was performed, thus the entire process could be carried out on large-scale roll-to-roll production lines. The organic diode based rectifier circuit generates a DC output voltage of approximately 2.7 V at 10 MHz, using an input signal with zero-to-peak voltage amplitude of 10 V. The result demonstrates the possibility of printed organic diodes for RFID applications.     

A star-shaped oligothiophene with triphenylamine as core and octyl cyanoacetate as end groups for solution-processed organic solar cells

A new star-shaped D–π–A molecule with triphenylamine (TPA) as core and donor unit, octyl cyanoacetate (CA) as end group and acceptor unit, and 2,2′-bithiophene vinylene (bTV) as π bridge, S(TPA-bTV-CA) was designed and synthesized for the application as donor materials in solution-processed bulk-heterojunction organic solar cells (OSCs). The compound is soluble in common organic solvents. The thermal, optical and electrochemical properties of the star molecule were studied. The OSC devices were fabricated by spin-coating the blend solution of the molecule as donor and PC₇₀BM as acceptor (1:3, w/w). The OSC device based on S(TPA-bTV-CA)/PC₇₀BM demonstrated a high open circuit voltage of 0.91 V, a short circuit current density of 4.64 mA/cm², a fill factor (FF) of 50%, corresponding to a power conversion efficiency of 2.1%, under the illumination of AM 1.5, 100 mW/cm².     

Effects of defect,carrier concentration and annealing process on the photoluminescence of silicon pn diodes

Silicon pn diodes were fabricated by ion implantation of B and P ions with different doses and subsequent annealing processes. Room temperature photoluminescence (PL) were investigated and the factors affecting the PL intensity were analyzed. Results show that both kinds of pn diodes have PL peak centered at about 1140 nm. Dislocation loops resulted from ion implantation and annealing process may enhance the light emission of silicon pn diode due to its band quantum confinement effect to carriers. The luminescence intensity depends on the carrier concentrations in the implantation region. It should be controlled at the range of 1–6×10¹⁶ cm⁻³. Moreover, the PL intensities of pn diodes with furnace annealing (FA) are higher than those with rapid thermal annealing, and the annealing temperature range for FA is 900–1100 °C.     

Investigations on the annealing behavior of high-energy carbon irradiated Au/n-GaAs Schottky barrier diodes

Au Schottky barrier diodes (SBDs) have been irradiated using high-energy carbon ion fluences of 1×10¹¹, 1×10¹² and 1×10¹³ cm⁻². Current–voltage characteristics of unirradiated and irradiated diodes have been analyzed. The change in reverse leakage current increases with increasing ion fluence due to the irradiation-induced defects at the interface. The diodes were annealed at 523 and 623 K to study the effect of annealing. The rectifying behavior of the irradiated SBDs improves at 523 K. But at 623 K, the diode behavior deteriorates irrespective of the fluences. Better enhancement in the barrier height and also improvement in the ideality factor of the diodes has been observed at the annealing temperature of 523 K. Scanning Electron Microscopic analysis was carried out on the irradiated samples to delineate the projected range of the defects by high-energy carbon ion irradiation.     

Photophysical and charge-transporting properties of the copolymer SuperYellow

Conjugated copolymers are important materials for organic light-emitting diodes. Here, an investigation of the photophysical and charge-transporting properties of the prototypical poly(p-phenylene vinylene) based copolymer SuperYellow (SY) is reported. The study also investigated the effect of processing conditions by comparing the properties of spin-coated and solution-cast films. For both types of films, the results of time-resolved fluorescence and photoluminescence quantum yield measurements are similar. The high photoluminescence quantum yield of 60% and its independence of processing conditions shows the effectiveness of the bulky side groups in preventing concentration quenching of fluorescence. Time of flight measurements of charge mobility in both spin-coated and solution-cast films also showed similar results, with mobilities in the range 10^?6–10^?7 cm²/V s for both films. These results provide important information about a widely used copolymer and show that a good polymer light-emitting diode material can have low mobility.     

Investigation and optimization of each organic layer: A simple but effective approach towards achieving high-efficiency hybrid white organic light-emitting diodes

A highly efficient hybrid white organic light-emitting diode based on a simple structure has been successfully fabricated and characterized. By systematically investigating the influence of the emissive layer thickness, electron transporting layer thickness, spacer and hole transporting layer, the forward-viewing current efficiency and power efficiency of the resulting device without any out-coupling schemes or n-doping strategies can be as high as 59.4 cd/A and 58.4 lm/W, respectively. Besides, a Commission International de l’Eclairage of (0.412, 0.393) and a color rendering index of 60 are obtained at the current density of 11 mA/cm². Through the optimization and investigation, the origin of this unique device is explored comprehensively. Undoubtedly, such presented results will be beneficial to the design of both material and device architecture for ultra high-performance white organic light-emitting diodes.     

Very facile fabrication of aligned organic nanowires based high-performance top-gate transistors on flexible,transparent substrate

Aligned single-crystalline organic nanowires (NWs) show promising applications in flexible and stretchable electronics, while the use of pre-existing aligned techniques and well-developed photolithography techniques are impeded by the large incompatibility with organic materials and flexible substrates. In this work, aligned copper phthalocyanine (CuPc) organic NWs were grown on flexible and transparent poly(dimethylsiloxane) (PDMS) substrate via a grating-assisted growth approach. Furthermore, a simple yet efficient etching-assisted transfer printing (ETP) method was used to achieve CuPc NW array-based flexible top-gate organic field-effect transistors (OFETs) with a high mobility up to 2.0 cm² V⁻¹ s⁻¹, a small operating voltage within ±10 V, a high on/off ratio >10⁴, and excellent bend stability with bending radius down to 3 mm. It is expected that the high-performance organic NW array-based top-gate OFETs with exceeding bend stability will have important applications in future flexible electronics.     

Solution processable organic p–n junction bilayer vertical photodiodes

Organic p–n bilayer photodiodes were produced by solution casting poly(3-hexylthiophene) (P3HT) from chlorobenzene and phenyl-C₆₁-butyric acid methyl ester (PCBM):poly(4-chlorostyrene) (PClS) blends from the nearly orthogonal solvent dichloromethane onto flexible indium tin oxide (ITO)/polyester as a substrate. This is the first demonstration of PCBM–inert polymer blends for such a device. The electron mobility of a 90% PCBM–10% PClS blend was 3.5 × 10^?3 cm²/V s in a field-effect transistor. The diodes showed a rectification ratio of 2.0 × 10³ at ±2.0 V with a forward bias current density as high as 340 μA/cm² at 2.0 V in the dark. Irradiation with various light sources (0.013–291 mW/cm²) under ambient atmosphere generated a linear increase in photocurrent. Photodiodes with thinner active layers showed larger photocurrent and relative photoresponse, probably because of lower series resistance and lower recombination probability. The reverse bias response was less dependent on device area than the forward bias response. Photocurrents from multiple devices in parallel were additive as expected. The results demonstrate a simple fabrication route to light detectors compatible with solution processes and flexible substrates.     

High performance tetrathienoacene-DDP based polymer thin-film transistors using a photo-patternable epoxy gate insulating layer

High performance organic thin-film transistors (OTFTs) are fabricated on an epoxy based photo-patternable organic gate insulating layer (p-OGI) using a top contact thin-film transistor configuration. This negative tone p-OGI material is composed of an epoxy type polymer resin, a polymeric epoxy cross-linker, and a sulfonium photoacid generator (PAG). Features from p-OGI can be precisely patterned down to ∼3 μm via i-line photolithography. In order to evaluate the potential of this epoxy type resin as a gate insulator, we evaluated the dielectric properties of the p-OGI and its gate insulating performance upon fabricating solution processed OTFTs using an organic semiconductor (OSC), namely tetrathienoacene-DPP copolymer (PTDPPTFT4). Results show that the PTDPPTFT4 based OTFTs with this p-OGI exhibit field-effect mobilities up to 1 cm² V⁻¹ s⁻¹, indicating the potential of high performance solution processed OTFT based on an epoxy based p-OGI/OSC system.     

Effect of periodically modified n-type electron transport layers on the optoelectrical performance of organic light-emitting diodes

We have investigated the characteristics of Cs₂CO₃ doped 4, 7-Diphenyl-1, 10-phenanthroline (Bphen) film and the effects of its thickness on the optoelectrical performance of microcavity organic light-emitting diodes. By doping Cs₂CO₃ into Bphen, higher current density and lower turn-on voltage could be achieved with barely changing the external quantum efficiency. Three types of resonators were fabricated by varying the thickness of every a quarter of electron transport layers, i.e. 152.5 nm (0.25 λ), 305 nm (0.5 λ), and 610 nm (1.0 λ). The 0.25λ-based microcavity organic light-emitting diode was found to exhibit the lowest waveguided loss coefficient of 118.0 cm⁻¹, while the relative emission intensity of edge mode to surface reached about 2118.8 times, indicating that this mode underwent a very low attenuation during its propagation.     

Flexible nonvolatile organic ferroelectric memory transistors fabricated on polydimethylsiloxane elastomer

The flexible organic ferroelectric nonvolatile memory thin film transistors (OFMTs) were fabricated on polydimethylsiloxane (PDMS) elastomer substrates, in which an organic ferroelectric poly(vinylidene-trifluoroethylene) and an organic semiconducting poly(9,9-dioctylfluorene-co-bithiophene) layers were used as gate insulator and active channel, respectively. The carrier mobility, on/off ratio, and subthreshold swing of the OFMTs fabricated on PDMS showed 5 × 10⁻² cm² V⁻¹ s⁻¹, 7.5 × 10³, and 2.5 V/decade, respectively. These obtained values did not markedly change when the substrate was bent with a radius of curvature of 0.6 cm. The memory on/off ratio was initially obtained to be 1.5 × 10³ and maintained to be 20 even after a lapse of 2000 s. The fabricated OFMTs exhibited sufficiently encouraging device characteristics even on the PDMS elastomer to realize mechanically stretchable nonvolatile memory devices.     

Controllable carrier density of pentacene field-effect transistors using polyacrylates as gate dielectrics

We have studied the effect of the chemical structure of dielectrics by evaporating pentacene onto a series of polyacrylates: poly(methylmethacrylate), poly(4-methoxyphenylacrylate), poly(phenylacrylate), and poly(2,2,2-trifluoroethyl methacrylate) in organic thin-film transistors (OTFTs). In top-contact OTFTs, the polyacrylates had a significant effect on field-effect mobilities ranging 0.093 ∼ 0.195 cm² V⁻¹ s⁻¹. This variation neither correlated with the polymer surface morphology nor the observed pentacene crystallite size. This result implies that the PTFMA device generates the local electric field that accumulates holes and significantly shifts the threshold voltage and the turn-on voltage to −8.62 V and 3.5 V, respectively, in comparison with those of PMMA devices.     

Improving the efficiency of light-emitting diode based on a thiophene polymer containing a cyano group

We report on the overall improvement of a single layer organic light-emitting diode device based on poly{[3-hethylthiophene]-co-3-[2-(p-cyano-phenoxy)ethyl]thiophene} or namely PTOPhCN. This polymer was recently developed by adding a cyano group as a side-chain substituent of the thiophenic backbone onto the main polymer chain and showed promising results for light-emitting diode devices. Using an improved device layout, bright red electroluminescence was obtained at 4 V and showed a luminance of about 400 cd/m² at 8 V with current densities in the order of 6000 A/m².     

Structural,optical dispersion and dielectric properties of novel chromium nickel organic crystalline semiconductors

A novel organic crystalline semiconductor, [Cr(DPPP)(DPPM)(Ni-ap)(CO)₂] (Cr–Ni OSC) (6a), (DPPP=diphenylphosphino-propanone, DPPM=diphenylphosphino-methane and Ni-ap=nickel apyrazole ring) (6a) was synthesized. Structural characteristics of the Cr–Ni OSC complex have been investigated by IR, ¹HNMR, ³¹P NMR, thermal analysis (TG/DTA), and XRD. Thermal analysis of Cr–Ni OSC implies that, the complex was thermally stable up to 218 °C, and the melting point of it was 193 °C. Two discrete regions of (44.46%, 128–421 °C) and (41.15%, 600–823 °C) by TG analysis of Cr–Ni OSC complex was determined. XRD crystal data of Cr–Ni OSC showed the formation of monoclinic (P2₁/n). Transmittance and reflectance have been used to determine the optical dispersion and dielectric properties of the Cr–Ni OSC complex in the range of 200–800 nm. The transparency of the complex is 75–80% in the visible range. The optical and transport energy gaps were estimated as 1.87 eV and 2.01 eV respectively. Optical dispersion parameters have been calculated by using single term Sellmeier dispersion relation and Wemple–DiDomenico single oscillator model. Several dispersion parameters were determined by analysis of refractive index dispersion. The optical conductivity, surface and volume energy loss functions, and the electric modulus were also estimated from the optical dielectric constant analysis.     

High performance top-emitting and transparent white organic light-emitting diodes based on Al/Cu/TcTa transparent electrodes for active matrix displays and lighting applications

It is challenging to obtain broadband emission covering as much of the visible light spectrum as possible in top-emitting white organic light-emitting diodes (TEWOLEDs) due to the well known microcavity effects. In this work, we achieved TEWOLED with three separate peak and negligible angular dependence by employing a high transmittance stack cathode Al (2 nm)/Cu (18)/TcTa (60 nm). The TEWOLED shows an efficiency of 25.6 cd/A, 20.1 Lm/W at 1000 cd/m², and low voltage of 4.2 V for 1222 cd/m². Synchronously, we achieved transparent white organic light-emitting diode (TWOLED) using this high transmittance stack cathode, the TWOLED exhibits similar spectrum and comparable luminance from both sides, and the maximum total efficiencies of the TWOLED are 28.6 cd/A, 24.9 Lm/W.     

Megahertz operation of flexible low-voltage organic thin-film transistors

Bottom-gate, top-contact (inverted staggered) organic thin-film transistors with a channel length of 1 μm have been fabricated on flexible plastic substrates using the vacuum-deposited small-molecule semiconductor 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C₁₀-DNTT). The transistors have an effective field-effect mobility of 1.2 cm²/V s, an on/off ratio of 10⁷, a width-normalized transconductance of 1.2 S/m (with a standard deviation of 6%), and a signal propagation delay (measured in 11-stage ring oscillators) of 420 ns per stage at a supply voltage of 3 V. To our knowledge, this is the first time that megahertz operation has been achieved in flexible organic transistors at supply voltages of less than 10 V.     

Scaling down of organic complementary logic gates for compact logic on foil

In this work, we realize complementary circuits with organic p-type and n-type transistor integrated on polyethylene naphthalate (PEN) foil. We employ evaporated p-type and n-type organic semiconductors spaced side by side in bottom-contact bottom-gate coplanar structures with channel lengths of 5 μm. The area density is 0.08 mm² per complementary logic gate. Both p-type and n-type transistors show mobilities >0.1 cm²/V s with V_on close to zero volt. Small circuits like inverters and 19-stage ring oscillators (RO) are fabricated to study the static and the dynamic performance of the logic inverter gate. The circuits operate at V_dd as low as 2.5 V and the inverter stage delay at V_dd = 10 V is as low as 2 μs. Finally, an 8 bit organic complementary transponder chip with data rate up to 2.7 k bits/s is fabricated on foil by successfully integrating 358 transistors.