高频基材介电参数带状线测试的误差修正方法

基于GB/T 12636“微波介质基片复介电常数带状线测试方法”的现有带状线测试系统的主要误差来源之一--边缘场效应引起的有效增长量ΔL,本课题组在Lab VIEW平台上开发了一款测试软件,通过软件实现了对有效增长量ΔL的修正,较好地改善了系统测量介电常数的精度。     

Advanced metrology for rapid characterization of the thermal mechanical properties of low-k dielectric and copper thin films

Evaluation of the thermal mechanical properties of new materials like Cu and low-krequire multiple complementary metrology toolsets. We report two complementary metrology tools that have a potential to rapidly screen new materials through the integration process. The first is an in-situ integrated metrology chamber that simultaneously measures several physical, optical, chemical, and electrical changes during a heat cycle. Complementing these measurements with results from quantitative adhesion testing, based on the modified edge lift off test (MELT) principle, the thermal mechanical properties of new materials can be rapidly screened and evaluated.     

集成光学器件的PLZT薄膜溶胶-凝胶法制备与性能研究

在掺铌钛酸锶(NST)的衬底上, 通过加入抑制开裂剂聚乙二醇对异辛基苯基醚(triton X-100), 利用溶胶-凝胶法制备了厚达4.6μm的 锆钛酸铅镧(PLZT)薄膜,从而有效地减小了其在集成光学器件应用中的传输损耗。实验分析 了triton X-100的加入量对薄膜质量的影响,并通过优化triton X-100的加入量可有效抑制薄 膜开裂。利用光学显微镜、扫描电子显微镜(SEM)、X射线衍射仪(XRD)、棱镜耦合波导 测试仪和台阶 仪等对制备的薄膜性能进行分析。结果表明,经过650℃快速退火处 理后,得到了表面平整度小于30nm、 粒径为50~100nm的钙钛矿结构PLZT薄膜,测得PLZT(8/65/35)和PL ZT(11/65/35)薄膜在 1550nm波长处的折射率分别为2. 4029和2.388。本文方法制备的 薄膜可以用于PLZT电光器件的制作。     

Nanostructured thin films based on TiO2 and/or SiC for use in photoelectrochemical cells: A review of the material characteristics,synthesis and recent applications

In solar energy harvesting research, there is growing interest in the study of photoelectrochemical (PEC) properties of the following classes of semiconductor materials: metal oxides and silicon-based compounds. The motivation is that such materials are being successfully used as photoelectrode in PEC cells. Special attention has been given to the wide band gap materials. This review discusses, from the material science perspective, the recent literature relating to two wide band gap semiconductor materials: one metal oxide, titanium dioxide (TiO₂), and one silicon-based compound, silicon carbide (SiC). Emphasis is placed on TiO₂ and SiC thin films for PEC applications. Materials characteristics, synthesis methods and recent photocatalytic applications are presented. Finally, the interesting effect of the efficiency increase of PEC devices developed from a hetero-junction of TiO₂ and SiC is discussed.