定位孔缘破孔的研究

主要介绍孔缘破孔(在碱性蚀刻流程中发生的干膜流胶入孔致孔中开路)的影响因素。对定位孔缘破孔的形成机理进行分析及试验模拟,得出定位孔缘破孔的原因为:特殊结构特征板件在贴膜后板件板面局部温度较高,在没有散热完全情况下被收板放置在一起,导致定位区域干膜继续流胶入孔。通过提高贴膜后板件散热效果,最终杜绝定位孔缘破孔的产生。     

Robust power grid network design considering EM aging effects for multi-segment wires

This paper presents a number of power grid network design and optimization techniques that consider the electromigration (EM) effects for multi-segment interconnect wires. First, we consider a new EM immortality constraint due to EM void saturation volume for multi-segment interconnects. It helps reduce conservativeness in the EM-aware on-chip power grid design. Along with the EM nucleation phase immortality constraint, we show that both EM immortality constraints can be naturally integrated into the existing programming based power grid optimization framework. Second, to mitigate the overly conservativeness of the immortality constrained optimization methods, we further explore three strategies: we first size up failed wires to meet one of the immortality conditions subject to the design rules; second, we consider the EM-induced aging effects on power supply networks for a target lifetime, which allows some short-lived wires to fail and optimizes the remaining wires; third, we propose a large change sensitivity-based optimization scheme to perform localized fixing based on recently proposed coupled EM-IR drop analysis method. Numerical results on a number of IBM-format power grid networks demonstrate that the new method can reduce more power grid area compared to the existing EM immortality constrained optimizations. Moreover, the new method is able to optimize power grids with nucleated wires, which would not be possible with the existing methods. Results also show the sensitivity-based localized power girds fixing can fix EM-induced IR drop violations in a few minutes for synthesized power grid networks from ARM core designs.     

Formation of C49-TiSi2 in flash memories: a nucleation controlled phenomenon?

The formation of Ti silicides has been examined in flash memories with 0.25 μm linewidth by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. It has been observed that, after the first rapid thermal process and the selective metal etch, there is no silicide on the source and on a majority of drain contacts while C49-TiSi₂ is found on the gate. A pre-amorphisation implant increases drastically the formation of C49-TiSi₂ in the drain zone while modifications of annealing conditions have little impact. These results indicate that the formation of C49-TiSi₂ is most likely controlled by nucleation and that this nucleation is sensitive to both the width and the length of the reaction zone. The formation of a Ti rich silicide may play an important role in this nucleation by decreasing the driving force for the formation of C49-TiSi₂. Curiously enough, the formation of C49-TiSi₂ appears thus as a major concern for the salicide process in flash memories.     

微孔无铜原因分析与改善

文章主要分析了PCB制造过程中微孔出现孔无铜的各类原因以及改善预防措施,并且详细介绍了对于火山灰堵孔造成的微孔孔无铜的原因分析。     

Effect of nanoimprinted surface relief on Si and Ge nucleation and ordering

Surface relief formed by nanoimprinting and etching into a thermally grown SiO₂ layer on Si was used to position the initial nuclei formed by chemically vapor deposited Si and Ge. By controlling the deposition conditions, the surface diffusion length was adjusted to be comparable to or larger than the spacing between features, thus favoring nucleation adjacent to steps, rather than random nucleation. Random nucleation was further suppressed by a two-stage deposition process. Ge nucleation on oxide by chemical vapor deposition was enhanced by coating the oxide surface with an organic self-assembled monolayer (SAM) and by the nanoimprinted surface relief. The nanoimprinted surface relief also provides long-range order in the SAM.     

Simulation and verification of void transfer patterning (VTP) technique for nm-scale features

This paper investigates simulation of a patterning technique for defining sub-lithographic features. The technique studied involves intentional creation of voids using a conformal chemical vapor deposition (CVD) followed by controlled etch-back to form nanoscale pores. This method provides features that are independent of lithographically defined parent holes and exhibit lower critical dimension (CD) variations. It offers efficient low thermal budget and backend process compatible integration scheme that requires just one additional mask level. The void diameter obtained in this work is 74 nm i.e. ∼10× reduction from lithographically defined hole of 714 nm using i-line lithography. Critical parameters affecting the void formation and the final pore size have been identified and modeled. Simulation of the void transfer process has been investigated using plasma etch module of ‘Elite’ by Silvaco that employs 2-D Monte Carlo ion transport modeling. The results of this investigation show that the geometrical design parameters can be coupled with the plasma process simulations to develop an efficient module for the void transfer process.     

Hygrothermal effects upon stress relaxation in a polyimide film

Polyimide films are being used extensively in first and second level microelec-tronic packages. Despite their many advantages, the tendency of polyimide films to absorb moisture can pose serious reliability problems such as corrosion, internal shorts, delamination, loss in dimensional stability, and a reduction in mechanical performance. This paper presents the results of an investigation of the effects of moisture upon stress relaxation in Kapton^#x00AE; polyimide films. Three relaxation frames were designed and built so that they could be placed side by side within an environmental chamber which controlled both temperature and relative humidity. Stress relaxation experiments were then conducted in triplicate at various combinations of temperature and relative humidity and the relaxation modulus was determined as a function of time, temperature, and moisture concentration. While the relaxation modulus was found to decrease with increasing temperature and moisture concentration, this plasticizing effect could not be described by the simplifying assumption of time-temperature-moisture superposition except for those results obtained at or below 50% relative humidity. Application of the time-temperature superposition principle to the results obtained at relative humidities higher than 50% produced several distinct master curves at constant moisture concentration. These curves had fundamentally different shapes which could not be superimposed by rigid horizontal shifting.     

Hot exciton effects and relaxation in coupled quantum wells

By studying photoluminescence and photoluminescence excitation in coupled quantum wells, we have studied the influence of the tunneling time on the relaxation of the photoexcited carriers. The ability to vary the coupling strength by the barrier thickness, allowed us to evidence hot exciton relaxation effects as well as resonant Raman scattering.     

Selective orientation of discotic films by interface nucleation

Thin films deposited from solution by the hollow capillary writing technique exhibit macroscopic uniaxial grains with an in-plane arrangement of discotic stacks. We report a method to change the orientation of thin films from in-plane to homeotropic (discotic columns perpendicular to the substrate). It is observed that annealing of open supported films at a temperature 25 °C below the equilibrium LC/isotropic phase boundary induces homeotropic alignment, while rapid cooling leads to predominantly in-plane alignment. A model based on heterogeneous nucleation at the film/substrate interface accounts for the experimental observations.     

VCSELs与EELs多模弛豫振荡的研究

根据多模速率方程,利用MATLAB提供的SIMULINK软件包对垂直腔面发射激光器(VCSELs)和边发射激光器(EELs)多模弛豫振荡进行了研究。结果表明,与单模情况相比,多模时EELs弛豫振荡频率增大、弛豫和延迟时间缩短,而VCSELs动态特性变化不大。与此同时,在得出VCSELs的单模工作、高速调制以及提高偏置电流或自发辐射因子可改善两类器件动态特性等结论外还看到,VCSELs边模抑制比(SMSR)随偏置电流变化率高于EELs;自发辐射因子增大时,边模强度同比例增大、主模强度减小,利用微腔效应有效控制自发辐射因子可以优化VCSELs的单模特性。     

ODDI括约肌松弛性病变的诊断和治疗

目的：探讨十二指肠乳头括约肌（Oddi括约肌）松弛性病变的诊断标准及治疗方法。方法：对56例有反复发作急性胆管炎（和）胆总管结石术后复发患者,采用B超、术中纤维胆道镜探查Oddi括约肌关闭径、开放径、ERCP胆管测压,诊断Oddi括约肌松弛性病变。结果：行I期胆肠吻合术50例,II期胆肠吻合术6例;随访6月~3年,行胆...     

利用皮秒脉冲相关技术测量甲酚紫染料吸收恢复时间的研究

本文介绍了利用不同强度皮秒脉冲相关技术测量甲酚紫激光染料吸收恢复时间的原理,实验装置。我们测出甲酚紫染料的吸收恢复时间τ_(21)=163PS,并与国外其它方法测得的数值进行比较,说明结果是可信的。     

Studies on nucleation kinetics of InxGa1−xN/GaN heterostructures

Nucleation kinetics during the growth of In_xGa_1−xN on a GaN substrate have been studied. The behavior of nonequilibrium between the In_xGa_1−xN and the GaN substrate has been analyzed, and hence, the expression derived for the stress-induced supercooling/superheating has been numerically evaluated. The maximum amount of stress-induced supercooling is found to be 1.017 K at x=0.12. These values are incorporated in the classical heterogeneous nucleation theory. Using the regular solution model, the interfacial tension between the nucleus and substrate and, hence, the interfacial tension between nucleus and mother phase and thermodynamical potential of the compounds have been calculated. The amount of driving force available for the nucleation has been determined for different compositions and degrees of supercooling. It has been shown that the value of the interaction parameter of InN-GaN plays a dominant role in nucleation and growth kinetics of In_xGa_1−xN on a GaN substrate. These values have been used to evaluate the nucleation parameters. It is shown that the nucleation barrier for the formation of a In_xGa_1−xN nucleus on a GaN substrate is minimum in the range of x=0.12 to x=0.17, and it has been qualitatively proved that good quality In_xGa_1−xN on GaN can be grown only in the range 0<x≤0.2.     

Stress relaxation behavior of eutectic tin-lead solder

The creep behavior of eutectic tin-lead solder was investigated using stress relaxation techniques. Stress relaxation experiments were performed on cast tensile specimens of commercial eutectic tin-lead solder, SN63. The sample casting conditions were controlled to produce microstructures similar to those found in typical solder joints on electronic assemblies. The stress relaxation data was analyzed to extract constitutive relations for creep. The strain rate during relaxation was found to follow two power law expressions, one with n = 3.2 at low stress levels and the other with n = 6.2 at higher stress levels. The apparent activation energy for creep and the power law exponent are discussed with relation to the published data for this alloy.     

用克尔快门测量与脉冲宽度相比拟的克尔液体的弛豫时间

本文介绍一种当克尔液体的弛豫时间与脉冲宽度相比拟时,用克尔快门测量克尔液体弛豫时间的方法。     

The correlation between stress relaxation and steady-state creep of eutectic Sn-Pb

This paper surveys and compares creep and stress relaxation data on finegrained eutectic Sn-Pb. It examines the consistency of the available data on this extensively studied solder material and studies whether stress relaxation offers a reasonable alternative to the more laborious conventional creep tests. The data survey reveals systematic differences between the creep behavior of material that is grain-refined by cold work and recrystallization (“recrystallized”) and that refined by rapid solidification (“quenched”). The recrystallized material has the conventional three regimes of creep behavior: a high-stress region with a stress exponent, n ∼ 4–7 and an activation energy Q ∼ 80 kJ/mole (a bit below that for self-diffusion of Pb and Sn), an intermediate region with n ∼ 2 and Q ∼ 45 kJ/mole (near that for grain boundary diffusion), and a low-stress region with n ∼ 3 and Q ∼ 80 (suggesting a reversion to a bulk mechanism). The quenched material shows only two regions: a high-stress creep with a stress exponent, n ∼ 3–7, and a low-stress region with n ∼ 3. The mechanisms in both regimes have activation energies intermediate between bulk and interface values (50–70 kJ/mole). With minor exceptions, the stress relaxation data and the creep data are in reasonable agreement. Most of the exceptions seem to be related to the difficulty of capturing the full details of grain boundary creep in stress relaxation tests.     

Effect of Intermetallic on Electromigration and Atomic Diffusion in Cu/SnAg3.0Cu0.5/Cu Joints: Experimental and First-Principles Study

Electromigration phenomena in a one-dimensional Cu/SnAg_3.0Cu_0.5/Cu joint were investigated with current stressing. The special effect of intermetallic compound (IMC) layers on the formation of serious electromigration damage induced by nonuniform current density distribution was discussed based on experimental results. Meanwhile, hillocks were observed both at the anode and near the cathode of the joint, and they were described as the result of diffusion of atoms and compressive stress released along grain boundaries to the relatively free surface. Moreover, the diffusion behavior of Cu at the cathode was analyzed with the electromigration equation, and the stability of Ag atoms in the solder during electromigration was evaluated with a first-principles method.     

高频飞秒激光对铜片烧蚀过程热弛豫现象研究

研究了铜片在不同能量密度的单脉冲飞秒激光下烧蚀的结果。 将飞秒激光烧蚀实验的结果结合双温模型在有限差分法下模拟出的数据图,从而研究不同激光能量密度与烧蚀间的联系。飞秒激光的烧蚀过程属于非平衡烧蚀,按照模拟出的数据,对铜片烧蚀过程中表面电子温度及晶格温度有了直观的认识,进而进行研究,得出整个激光烧蚀中热弛豫规律。 在不同能量密度的飞秒激光烧蚀下对电声相互作用的研究,其模拟结果有利于找出能量密度与飞秒激光烧蚀的关联,而实验图进一步表明了提升飞秒激光能量密度与加工铜材料的加工效率以及加工质量之间的意义。综合以上分析,能够得出随着飞秒激光能量密度的增加,飞秒激光烧蚀期间材料的热弛豫过程加长,烧蚀强度有所增加,材料加工后得出形貌质量提高,其对于飞秒激光烧蚀材料的研究具有很大意义。     

一种高精度张弛振荡器的设计

提出一种新的带温度补偿的张弛振荡器,采用正温度系数的阱电阻实现输出频率在大范围温度变化下保持稳定。该电路采用0.35μm的CMOS工艺实现,利用Cadence进行仿真验证。仿真结果显示,在-45℃~55℃范围内,该张弛振荡器的温度系数仅为404×10-9/℃。该振荡器振荡频率受温度影响很小,已经应用于工业控制类芯片中。     

Study of electromigration in eutectic SnPb solder stripes using the edge displacement method

Electromigration (EM) parameters in the eutectic SnPb solder were measured using the edge displacement method (EDM) and an atomic force microscope (AFM) in the temperature range of 60° to 140°C. The measured drift velocity was found to be 0.3 Å/sec when the solder stripe was stressed under 4.9×10⁴ A/cm² at 80°C, and it increased as the current density or the temperature increased. The products of DZ* at 60°C, 80°C, 100°C, 120°C, and 140°C were also obtained. In addition, the EM activation energy was determined to be 0.45 eV at the temperature range 60–100°C and 0.55 eV at the temperature range 100–140°C. These two activation energies may correspond to the Sn and Pb diffusion at the two temperature ranges. These values are very fundamental to current-carrying capability and mean-time-to-failure measurement for solder joints.