Microwave dielectric ceramics in the system BaO–Li2O–Nd2O3–TiO2

Ceramics in the system BaO-Li₂O–Nd₂O₃–TiO₂ (BNT–LNT) were prepared by the mixed oxide route. Powders were mixed, milled, calcined and sintered at 1475°C for 4 h. Fired densities decreased steadily along the series from BNT to LNT. The microstructures of samples rich in BNT were dominated by small needle-like grains; the LNT samples comprised larger (6 μm) cubic grains. X-ray diffraction showed that there was a transition from orthorhombic BNT to cubic LNT; small amounts of LNT could be accommodated in BNT, but between 10–20% LNT there was the development of the second phase. Small additions of LNT led to a small increase in relative permittivity, but decreased the dielectric Q-value (from the maximum of 1819 at 4 GHz). As BNT and LNT exhibit negative and positive temperature dependencies of permittivity respectively, the addition of 10–20% LNT to BNT should yield samples with zero temperature dependence of _r Impedance spectroscopy showed that data could only be acquired at elevated temperatures for BNT rich samples (above 500°C), but at modest temperatures (less than 100°C) for the more conductive LNT.     

Low temperature sintering and microwave dielectric properties of 0.5LaAlO3–0.5SrTiO3 ceramics using copper oxide additions

The microwave dielectric properties and the microstructures of 0.5LaAlO₃–0.5SrTiO₃ ceramics with CuO addition prepared with conventional solid-state route have been investigated. Doping with CuO (up to 1 wt.%) can effectively promote the densification and remain comparable dielectric properties of 0.5LaAlO₃–0.5SrTiO₃ ceramics. It is found that 0.5LaAlO₃–0.5SrTiO₃ ceramics can be sintered at 1400 °C due to the sintering aid effect resulted from CuO as addition observed by scanning electron microscopy. The dielectric constant as well as the Q×f value decreases with increasing CuO content. At 1460 °C, 0.5LaAlO₃–0.5SrTiO₃ ceramics with 0.25 wt.% CuO addition possess a dielectric constant (_r) of 35.2, a Q×f value of 24 000 (at 8 GHz) and a temperature coefficient of resonant frequency (τ_f) of −13.5 ppm/°C.     

Low temperature and microwave dielectric properties of TiO2/ZBS glass composites

TiO₂ based ceramic/glass composites were prepared by a non-reactive liquid phase sintering (NLPS) using zinc borosilicate (ZBS) glass having the deformation temperature of 588 °C. The compounds of Zn₂SiO₄ and Zn₄B₆O₁₃ were formed after the sintering process, indicating that the ZBS glass was a non-reactive one in this system. For TiO₂/50 vol% ZBS glass composite, the two-stage sintering behavior was conducted as the sintering temperature increased. The former might be correlated to the NLPS process and the latter appeared to be related to the crystallization. The dielectric constant (?_r) was mainly affected by the porosity and obeyed the logarithmic mixing rule. The quality factor (Q × f₀) showed an increase and then a steep decrease after the maximum at 850 °C. TiO₂/50 vol% ZBS glass composite sintered at 900 °C demonstrated 36 in the dielectric constant (?_r) and 7500 GHz in the quality factor (Q × f₀) for an application to LTCC filters.     

Low-temperature firing and microwave dielectric properties of 16CaO–9Li2O–12Sm2O3–63TiO2 ceramics with V2O5 addition

The sintering behaviors and microwave dielectric properties of the 16CaO–9Li₂O–12Sm₂O₃–63TiO₂ (abbreviated CLST) ceramics with different amounts of V₂O₅ addition had been investigated in this paper. The sintering temperature of the CLST ceramic had been efficiently decreased by nearly 100 °C. No secondary phase was observed in the CLST ceramics and complete solid solution of the complex perovskite phase was confirmed. The CLST ceramics with small amounts of V₂O₅ addition could be well sintered at 1200 °C for 3 h without much degradation in the microwave dielectric properties. Especially, the 0.75 wt.% V₂O₅-doped ceramics sintered at 1200 °C for 3 h have optimum microwave dielectric properties of Kr = 100.4, Q × f = 5600 GHz, and TCF = 7 ppm/°C. Obviously, V₂O₅ could be a suitable sintering aid that improves densification and microwave dielectric properties of the CLST ceramics.     

Sintering behavior and microwave dielectric properties of Bi2O3–ZnO–Nb2O5-based ceramics sintered under air and N2 atmosphere

The sintering behavior and dielectric properties of the monoclinic zirconolite-like structure compound Bi₂(Zn_1/3Nb_2/3)₂O₇ (BZN) and Bi₂(Zn_1/3Nb_2/3−xV_x)₂O₇ (BZNV, x = 0.001) sintered under air and N₂ atmosphere were investigated. The pure phase were obtained between 810 and 990 °C both for BZN and BZNV ceramics. The substitution of V₂O₅ and N₂ atmosphere accelerated the densification of ceramics slightly. The influences on microwave dielectric properties from different atmosphere were discussed in this work. The best microwave properties of BZN ceramics were obtained at 900 °C under N₂ atmosphere with _r = 76.1, Q = 850 and Q_f = 3260 GHz while the best properties of BZNV ceramics were got at 930 °C under air atmosphere with _r = 76.7, Q = 890 and Q_f = 3580 GHz. The temperature coefficient of resonant frequency τ_f was not obviously influenced by the different atmospheres. For BZN ceramics the τ_f was −79.8 ppm/°C while τ_f is −87.5 ppm/°C for BZNV ceramics.     

Effects of Al2O3 addition on the sintering behavior and microwave dielectric properties of CaSiO3 ceramics

The effects of Al₂O₃ addition on the densification, structure and microwave dielectric properties of CaSiO₃ ceramics have been investigated. The Al₂O₃ addition results in the presence of two distinct phases, e.g. Ca₂Al₂SiO₇ and CaAl₂Si₂O₈, which can restrict the growth of CaSiO₃ grains by surrounding their boundaries and also improve the bulk density of CaSiO₃-Al₂O₃ ceramics. However, excessive addition (≥2 wt%) of Al₂O₃ undermines the microwave dielectric properties of the title ceramics since the derived phases of Ca₂Al₂SiO₇ and CaAl₂Si₂O₈ have poor quality factor. The optimum amount of Al₂O₃ addition is found to be 1 wt%, and the derived CaSiO₃-Al₂O₃ ceramic sintered at 1250 °C presents improved microwave dielectric properties of ?_r = 6.66 and Q × f = 24,626 GHz, which is much better than those of pure CaSiO₃ ceramic sintered at 1340 °C (Q × f = 13,109 GHz).     

Pressureless sintering and mechanical properties of SiO2–Al2O3–MgO–K2O–TiO2–F (CaO–Na2O) machinable glass–ceramics

To develop a high strength machinable glass–ceramic through pressureless sintering, the glassy compositions were obtained by mixing a mica-based frit and a frit in the SiO₂–CaO–Na₂O system. According to XRD results, the glass compositions mainly crystallized into phlogopite and diopside after sintering. The optimum sintered glass–ceramic with desirable mechanical properties, machinability and sinterability was achieved by addition of 30 wt.% SiO₂–CaO–Na₂O glass powder to 70 wt.% mica glass composition. SEM results confirmed presence of needle-like diopside crystals which played a reinforcement role to the platelet phlogopite and glassy matrix combination. The measurements showed bending strength and fracture toughness enhanced up to 144.6 ± 17.6 MPa and 1.7 ± 0.2 MPa m^1/2, respectively.     

Enhanced energy storage properties of BaO-K2O-Nb2O5-SiO2 glass ceramics obtained through microwave crystallization

BaO-K₂O-Nb₂O₅-SiO₂ (BKNS) glass ceramics were prepared by microwave crystallization of transparent glass matrices and the effects of microwave treatment temperature on their dielectric performances, phase structure, microstructure and breakdown strength (BDS) were investigated systematically. X-ray diffraction results suggested that microwave treatment had no significant influence on the type of precipitated phases. The microstructure of the glass ceramics was remarkably optimized via microwave treatment. The dielectric constant and breakdown strength of microwave-treated samples were significantly improved as compared with conventional-heated samples at the same temperature. The maximum theoretical energy storage density of microwave-treatment samples at 750?°C reached 12.7?J/cm³, which was larger than that of the conventional-heated samples (8.6?J/cm³).     

Non-isothermal crystallization kinetics of MgO–BaO–B2O3–Al2O3–SiO2 glass

5MgO–9BaO–33B₂O₃–33Al₂O₃–20SiO₂ (mol%) glass was prepared by the melt quenching method at 1823 K for 2 h. Dilatometry and differential scanning calorimetry (DSC) curves of the glass have been investigated. Fragility index F was used to estimate glass formability. The crystallization kinetics of the glass was described by the activation energy (E) for crystallization and numerical factors (n, m) depending on the nucleation process and growth morphology. XRD and SEM analysis were also used to describe the crystals’ types and morphology precipitated from the MgO–BaO–B₂O₃–Al₂O₃–SiO₂ glass. The results show that the effective activation energy of the crystallization process E was 45.19 kJ/mol, and n up to 4.05. Two crystals phases, i.e. Al₄B₂O₉ and Al₂₀B₄O₃₆ were observed in the crystallized samples. SEM results were consistent with crystallization kinetics.     

Preparation and microwave dielectric properties of 3ZnO·B2O3 ceramics with low sintering temperature

The preparation and dielectric properties of 3ZnO·B₂O₃ ceramics were investigated. Dense 3ZnO·B₂O₃ ceramics were obtained as sintered in the temperature range from 950 to 1000 °C for 3 h. The X-ray diffraction showed that the obtained ceramics were of a monoclinic 3ZnO·B₂O₃ structure. The ceramic specimens fired at 955 °C for 1 h exhibited excellent microwave dielectric properties: ?_r ∼ 6.9, Q × f ∼ 20,647 GHz (@6.35 GHz), and τ_f ∼ −80 ppm/°C. The dependences of relative density, ?_r, and Q × f of ceramics sintered at 955 °C on sintering soaking time showed that they all reached their plateaus as the soaking time was up to 60 min. Meanwhile, 3ZnO·B₂O₃ ceramics had no reaction with silver during cofiring, indicating it is a potential candidate for low-temperature cofired ceramic (LTCC) substrate.     

Microwave dielectric properties of BaO-2(1 − x)ZnO-xNd2O3-4TiO2 (x = 0-1.0) ceramics

Microwave dielectric properties of (1 − x)BaZn₂Ti₄O₁₁-xBaNd₂Ti₄O₁₂ (x = 0-1.0) ceramics were investigated by the solid-state reaction with the purpose of finding a microwave ceramics with high dielectric constant (?_r), high quality factor (Q × f) and low temperature coefficient of resonant frequency (τ_f). A two phase system BaZn₂Ti₄O₁₁-BaNd₂Ti₄O₁₂ was formed and SEM photographs show equiaxed BaZn₂Ti₄O₁₁ grains and columnar BaNd₂Ti₄O₁₂ grains. The microwave dielectric properties were strongly determined by the chemical composition. As increasing x from 0 to 1.0, the phase composition varied from pure BaZn₂Ti₄O₁₁, to the two phase system BaZn₂Ti₄O₁₁-BaNd₂Ti₄O₁₂ and then to pure BaNd₂Ti₄O₁₂. Therefore, the ?_r raised from 29.1 to 82.0 and the Q × f values decreased from 54,630 GHz to 8110 GHz, and the τ_f values increased from −29 ppm/°C to 94 ppm/°C. 0.8BaZn₂Ti₄O₁₁-0.2BaNd₂Ti₄O₁₂ ceramics sintered at 1250 °C for 2.5 h had ?_r = 39.1, Q × f = 37,850 GHz and τ_f = −9 ppm/ °C.     

Microstructure and dielectric properties of Ba0.6Sr0.4TiO3-MgAl2O4 composite ceramics

(1 − x)Ba_0.6Sr_0.4TiO₃-xMgAl₂O₄(x = 25, 30, 35 and 40 wt%) composite ceramics were prepared by conventional solid-state reaction method. The microstructures, dielectric properties and tunability of the composites have been investigated. The XRD patterns analysis reveals two crystalline phases, a cubic perovskite structure Ba_0.6Sr_0.4TiO₃ (BST) and a spinel structure MgAl₂O₄ (MA). SEM observations show that the BST grains slightly dwindle and agglomerate with increasing amounts of MA. A dielectric peak with very strong frequency dispersion is observed at higher MA content, and the Curie temperature shifts to a higher temperature with increasing MA content. The ceramic sample with 30 wt% MA has the optimized properties: the dielectric constant is 1503, the dielectric loss is 0.003 at 10 kHz and 25 °C, the tunability is 23.63% under a dc electric field of 1.0 kV/mm, which is suitable for ferroelectric phase shifter.     

The reaction sequence and dielectric properties of BaSm2Ti4O12 ceramics

To establish the correct reaction sequence of BaO–Sm₂O₃–4TiO₂, phases present in different calcining temperatures are identified by X-ray diffraction patterns. When different calcining temperatures are used, the source phase BaO (BaCO₃) consumes below 850°C, the source phases TiO₂ and Sm₂O₃ consume at 1000 and 1150°C; the intermediate phases BaTiO₃, BaTi₄O₉, and Sm₂Ti₂O₇ consume at 1050, 1200, and 1250°C, respectively. The BaSm₂Ti₄O₁₂ phase starts to reveal at the 1100°C-calcined powder. The integrating intensity of BaSm₂Ti₄O₁₂ phase increases with the raising of calcining temperatures, accompanying with the decrease of integrating intensities of the source and intermediate phases. As the sintering temperature increases, the densities, quality values, and dielectric constants of BaSm₂Ti₄O₁₂ ceramics increase and saturate at 1325^oC. The BaSm₂Ti₄O₁₂ ceramics sintered at 1325°C have the properties of Q^*f=5180,_r=81.8, and τ_f=−19.2 ppm/°C.     

Effects of TiO2 addition on dielectric and energy storage properties of BaO-K2O-Nb2O5-SiO2 glass ceramics

In this work, 25.6BaO-6.4K₂O-32Nb₂O₅-36SiO₂-xTiO₂ (0 ≤ x ≤10 mol%) (BKNST) glass ceramics were synthesized by conventional melts and controllable crystallization method. The effects of different TiO₂ addition on the phase composition, dielectric and energy storage properties of BKNS glass ceramics were systematically evaluated. With the TiO₂ concentration increasing, a growing content of Ba₂TiO₄ phase was observed in the glass ceramics. The microstructures appeared to be homogenous and uniform with very low porosity through the addition of TiO₂, for which the maximal breakdown strength of 2112 kV/cm and the corresponding energy storage density of 9.48 J/cm³ were obtained with x = 7.5. The extremely low dielectric loss of less than 1‰ (25 °C, 100 kHz) and the obviously improved microstructure contributed to the increased breakdown strength. In addition, the discharge power density of the glass-ceramic capacitor (x = 7.5) was investigated using the RLC charge-discharge circuit and a relatively high value of 16 MW/cm³ at 300 kV/cm was obtained.     

The effects of La2O3 doping on the photosensitivity,crystallization behavior and dielectric properties of Li2O-Al2O3-SiO2 photostructurable glass

Photostructurable Li₂O-Al₂O₃-SiO₂ glass is a promising material to fabricate complex three-dimensional structure with a high aspect ratio. However, its high dielectric loss at high frequencies has restrained its application in the field of integrated circuits packaging. In this research, La₂O₃, which has a large ionic radius, as well as strong polarization and bonding strength, was used to obstruct mobile ion migration to reduce the dielectric loss. The results indicated that moderate doping with La₂O₃ could effectively reduce the dielectric loss. When the dopant amount was 3%, the dielectric loss was successfully reduced to a minimum of 4?×?10^?3 with a dielectric constant of 6.6 at 1?GHz, and this sample also possessed the optimal dielectric-temperature stability. Additionally, the effects of doping on the photosensitivity and crystallization behavior were also analysed. The results suggested that La₂O₃ doping did not affect the photosensitivity and selective crystallization characteristics. However, La₂O₃ restrained the precipitation of silicate from the [SiO₄] tetrahedron, resulting in a decrease of nucleation rate and a delay of crystallization.     

Effects of Bi2Mo2O9 addition on the sintering characteristics and microwave dielectric properties of BiSbO4 ceramics

In this study, densification, microstructural evolution and microwave dielectric properties of (1 − x)BiSbO₄–xBi₂Mo₂O₉ ceramics (x = 0–0.25) were investigated. Bi₂Mo₂O₉ was selected as the sintering aid as well as the modifier of the dielectric properties for BiSbO₄ ceramic. In comparison with pure BiSbO₄ densified at 1100 °C, the 0.75BiSbO₄–0.25Bi₂Mo₂O₉ composites emerged to reach maximum sintering density at 775 °C. No other second phase was detected while the microstructure exhibited a bimodal grain size distribution as both 1–2 μm large grains of Bi₂Mo₂O₉ and 0.2–0.5 μm fine grains of BiSbO₄ were observed. The ceramic with the best performance in terms of microwave dielectric properties in this system is found to be the 0.82BiSbO₄–0.18Bi₂Mo₂O₉ composite, which reports a ?_r of 24.3, a Q × f of 24,019 GHz, and a τ_f of −4 ppm/°C when sintered at 825 °C.     

Phase relations and electrical properties in the pseudo-ternary La2O3–TiO2–Mn2O3 system in air

Scanning electron microscopy (SEM), electron-probe microanalysis, energy- and wavelength-dispersive X-ray analysis and X-ray powder diffraction were used to investigate the subsolidus phase relations in the pseudo-ternary La₂O₃–TiO₂–Mn₂O₃ system in air (oxygen partial pressure p_O2=0.21   atm) at 1275 °C. The addition of Mn₂O₃ to the starting La₂O₃:3TiO₂ mixture led to the formation of a La-deficient perovskite La_2/3TiO₃ compound. The oxides form two new compounds with the proposed compositions: (i) La_1.7Ti_13.0Mn_6.3O_38−x, with a davidite-like crystal structure, and (ii) La₄₉Ti₁₈Mn₁₃O₁₂₉. There were also several solid solutions existing over a wide range of concentrations.     

Effects of CaSiO3 addition on sintering behavior and microwave dielectric properties of Al2O3 ceramics

The effects of CaSiO₃ addition on the sintering behavior and microwave dielectric properties of Al₂O₃ ceramics have been investigated. The addition of CaSiO₃ into Al₂O₃ ceramics resulted in the emergence of Ca₂Al₂SiO₇ and CaAl₂Si₂O₈, which acting as liquid sintering aids can effectively lower the sintering temperature of Al₂O₃ ceramic. The Q × f value of Al₂O₃-CaSiO₃ ceramics decreased with the CaSiO₃ addition increasing because of the lower Q × f value of Ca₂Al₂SiO₇ and CaAl₂Si₂O₈. Compared with the pure CaSiO₃ ceramic, the Al₂O₃-CaSiO₃ ceramic with 20 wt% CaSiO₃ addition possessed good dielectric properties of ?_r = 9.36 and Q × f = 13,678 GHz at the similar sintering temperature.     

Effect of sintering temperature on varistor properties and aging characteristics of ZnO–V2O5–MnO2 ceramics

The microstructure, electrical properties, dielectric characteristics, and DC accelerated aging behavior of the ZVM-based varistors were investigated for different sintering temperatures of 800–950 °C. The microstructure of the ZVM-based ceramics consisted of mainly ZnO grain and secondary phase Zn₃(VO₄)₂, which acts as liquid-phase sintering aid. The Zn₃(VO₄)₂ has a significant effect on the sintered density, in the light of an experimental fact, which the decreases of the Zn₃(VO₄)₂ distribution with increasing sintering temperature resulted in the low sintered density. The breakdown field exhibited the highest value (17,640 V/cm) at 800 °C in the sintering temperature and the lowest value (992 V/cm) at 900 °C in the sintering temperature. The nonlinear coefficient exhibited the highest value, reaching 38 at 800 °C and the lowest value, reaching 17 at 850 °C. The varistor sintered at 900 °C exhibited not only high nonlinearity with 27.2 in nonlinear coefficient, but also the highest stability, in which %ΔE_1 mA = −0.6%, %Δα = −26.1%, and %Δ tan δ = +21.8% for DC accelerated aging stress of 0.85 E_1 mA/85 °C/24 h.     

Low-temperature sintering and microwave dielectric properties of 3Z2B glass–Al2O3 composites

A potential low temperature co-fired ceramics system based on zinc borate 3ZnO–2B₂O₃ (3Z2B) glass matrix and Al₂O₃ filler was investigated with regard to phase development and microwave dielectric properties as functions of the glass content and sintering temperature. The densification mechanism for 3Z2B–Al₂O₃ composites was reported. The linear shrinkage of 3Z2B glass–Al₂O₃ composites exhibited a typical one-stage densification behavior. XRD patterns showed that a new crystalline phase, ZnAl₂O₄ spinel, formed during densification, indicating that certain chemical reaction took place between the 3Z2B glass matrix and the alumina filler. Meanwhile, several zinc borate phases, including 4ZnO·3B₂O₃, crystallized from the glass matrix. Both of the reaction product phase and crystallization phases played an important role in improving the microwave dielectric properties of composites. The optimal composition sintered at 850–950 °C showed excellent microwave dielectric properties: ?_r = ∼5.0, Q·f₀ = ∼8000 GHz, and τ_f = ∼−32 ppm/°C at ∼7.0 GHz.