Fabrication of microfluidic devices using MeV ion beam Programmable Proximity Aperture Lithography (PPAL)

MeV ion beam lithography is a direct writing technique capable of producing microfluidic patterns and lab-on-chip devices with straight walls in thick resist films. In this technique a small beam spot of MeV ions is scanned over the resist surface to generate a latent image of the pattern. The microstructures in resist polymer can be then revealed using a chemical developer that removes exposed resist, while leaving unexposed resist unaffected. In our system the size of the rectangular beam spot is programmably defined by two L-shaped tantalum blades with well-polished edges. This allows rapid exposure of entire rectangular pattern elements up to 500 × 500 μm in one step. By combining different dimensions of the defining aperture with the sample movements relative to the beam spot, entire fluidic patterns with large reservoirs and narrow flow channels can be written over large areas in short time. Fluidic patterns were written in PMMA using 56 MeV ¹⁴N³⁺ and a 3 MeV ⁴He²⁺ beams from K130 cyclotron and a 1.7 MV Pelletron accelerators, respectively, at the University of Jyväskylä Accelerator Laboratory. The patterns were characterized using SEM, and the factors affecting patterns quality are discussed.     

Preliminary results of proton beam characterization for a facility of broad beam in vitro cell irradiation

The interaction of charged particles with living matter needs to be well understood for medical applications. Particularly, it is useful to study how ion beams interact with tissues in terms of damage, dose released and dose rate.One way to evaluate the biological effects induced by an ion beam is by the irradiation of cultured cells at a particle accelerator, where cells can be exposed to different ions at different energies and flux.In this paper, we report the first results concerning the characterization of a broad proton beam obtained with our 2 MV tandem accelerator. For broad beam in vitro cell irradiation, the beam has to be stable over time, uniform over a ∼0.5 cm² surface, and a dose rate ranging from 0.1 to 10 Gy/min must be achievable. Results concerning the level of achievement of these requirements are presented in this paper for a 1 MeV proton beam.     

Uranium-molybdenum nuclear fuel plates behaviour under heavy ion irradiation: An X-ray diffraction analysis

Heavy ion irradiation has been proposed for discriminating UMo/Al specimens which are good candidates for research reactor fuels. Two UMo/Al dispersed fuels (U-7 wt%Mo/Al and U-10 wt%Mo/Al) have been irradiated with a 80 MeV ¹²⁷I beam up to an ion fluence of 2 × 10¹⁷ cm⁻². Microscopy and mainly X-ray diffraction using large and micrometer sized beams have enabled to characterize the grown interaction layer: UAl₃ appears to be the only produced crystallized phase. The presence of an amorphous additional phase can however not be excluded. These results are in good agreement with characterizations performed on in-pile irradiated fuels and encourage new studies with heavy ion irradiation.     

Pulsed source of ultra low energy positive muons for near-surface μSR studies

We have produced a pulsed beam of low energy (ultra slow) polarized positive muons (LE-μ⁺) and performed several demonstration muon spin rotation/relaxation (μSR) experiments at ISIS RIKEN-RAL muon facility in UK. The energy of the muons implanted into a sample is tuneable between 0.1 keV and 18 keV. This allows us to use muons as local magnetic microprobes on a nanometre scale. The control over the implantation depth is from several nanometres to hundreds of nanometres depending on the sample density and muon energy. The LE-μ⁺ are produced by two-photon resonant laser ionization of thermal muonium atoms. Currently ∼15 LE-μ⁺/s with 50% spin polarization are transported to the μSR sample position, where they are focused to a small spot with a diameter of only 4 mm. The overall LE-μ⁺ generation efficiency of 3 × 10⁻⁵ is comparable to that obtained when moderating the muon beam to epithermal energies in simple van der Waals bound solids. In contrast to other methods of LE-μ⁺ generation, the implantation of the muons into the sample can be externally triggered with the duration of the LE-μ⁺ pulse being only 7.5 ns. This allows us to measure spin rotation frequencies of up to 40 MHz.     

Proton beam induced luminescence of silicon dioxide implanted with silicon

Light emission from a silicon dioxide layer enriched with silicon has been studied. Samples used had structures made on thermally oxidized silicon substrate wafers. Excess silicon atoms were introduced into a 250-nm-thick silicon dioxide layer via implantation of 60 keV Si⁺ ions up to a fluence of 2 × 10¹⁷ cm⁻². A 15-nm-thick Au layer was used as a top semitransparent electrode. Continuous blue light emission was observed under DC polarization of the structure at 8-12 MV/cm. The blue light emission from the structures was also observed in an ionoluminescence experiment, in which the light emission was caused by irradiation with a H₂⁺ ion beam of energy between 22 and 100 keV. In the case of H₂⁺, on entering the material the ions dissociated into two protons, each carrying on average half of the incident ion energy. The spectra of the emitted light and the dependence of ionoluminescence on proton energy were analyzed and the results were correlated with the concentration profile of implanted silicon atoms.     

Scintillation light produced by low-energy beams of highly-charged ions

Measurements have been performed of scintillation light intensities emitted from various inorganic scintillators irradiated with low-energy beams of highly-charged ions from an electron beam ion source (EBIS) and an electron cyclotron resonance ion source (ECRIS). Beams of xenon ions Xe^q+ with various charge states between q = 2 and q = 18 have been used at energies between 5 and 17.5 keV per charge generated by the ECRIS. The intensity of the beam was typically varied between 1 and 100 nA. Beams of highly charged residual gas ions have been produced by the EBIS at 4.5 keV per charge and with low intensities down to 100 pA. The scintillator materials used are flat screens of P46 YAG and P43 phosphor. In all cases, scintillation light emitted from the screen surface was detected by a CCD camera. The scintillation light intensity has been found to depend linearly on the kinetic ion energy per time deposited into the scintillator, while up to q = 18 no significant contribution from the ions’ potential energy was found. We discuss the results on the background of a possible use as beam diagnostics, e.g. for the new HITRAP facility at GSI, Germany.     

Effect of swift heavy ion irradiation on structure, optical, and gas sensing properties of SnO2 thin films

Swift heavy ion irradiation has been successfully used to modify the structural, optical, and gas sensing properties of SnO₂ thin films. The SnO₂ thin films prepared by sol-gel process were irradiated with 75 MeV Ni⁺ beam at fluences ranging from 1 × 10¹¹ ion/cm² to 3 × 10¹³ ion/cm². Structural characterization with glancing angle X-ray diffraction shows an enhancement of crystallinity and systematic change of stress in the SnO₂ lattice up to a threshold value of 1 × 10¹³ ions/cm², but decrease in crystallinity at highest fluence of 3 × 10¹³ ions/cm². Microstructure investigation of the irradiated films by transmission electron microscopy supports the XRD observations. Optical properties studied by absorption and PL spectroscopies reveal a red shift of the band gap from 3.75 eV to 3.1 eV, and a broad yellow luminescence, respectively, with increase in ion fluence. Gas response of the irradiated SnO₂ films shows increase of resistance on exposure to ammonia (NH₃), indicating p-type conductivity resulting from ion irradiation.     

Heavy ion beam micromachining on LiNbO3

In this work 3D micromachining of x-cut lithium niobate crystals was performed using the high energy heavy ion microbeam (HIM) at the Tandar Laboratory, Buenos Aires. The samples were machined using ³⁵Cl beams at 70 MeV bombarding energy combined with wet etching with hydrofluoric acid solutions at room temperature. As the ion beam penetrates the sample, it induces lattice damage increasing dramatically the local etching rate of the material. This technique was applied to the fabrication of 3D waveguides with long control electrodes. The resulting structures indicate that well defined contours with nearly vertical sidewalls can be made. The results also show that with fluences of only 5 × 10¹² ions/cm², this technique is suitable for the fabrication of different shapes of LiNbO₃ control-waveguides that can be used in different optical devices and matched with the existing optical fibers.     

Temperature-dependent surface modification of InSb(0 0 1) crystal by low-energy ion bombardment

Structural and compositional modification of InSb(0 0 1) single crystal surfaces induced by oblique incidence 2-5 keV Ar and Xe ion irradiation have been investigated by means of scanning tunneling and atomic force microscopies, and time-of-flight mass spectroscopy of secondary ion emission. In general, ion-induced patterns (networks of nanowires, or ripples) are angle of incidence- and fluence-dependent. Temperature dependences (from 300 to 600 K) of the RMS roughness and of the ripple wavelength have been determined for the samples bombarded with various fluences. Secondary ion emission from an InSb(0 0 1) surface exposed to 4.5 keV Ar⁺ ions has been investigated with a linear TOF spectrometer working in a static mode. Mass spectra of the sputtered In⁺, Sb⁺ and In₂⁺ secondary ions have been measured both for the non-bombarded (0 0 1) surface and for the surface previously exposed to a fluence of 10¹⁶ ions/cm². In⁺ and In₂⁺ intensities for the irradiated sample are much higher in comparison to the non-bombarded one, whereas Sb⁺ ions show a reversed tendency. This behavior suggests a significant In-enrichment at the InSb(0 0 1) surface caused by the ion bombardment.     

Study of Al measurement on the Shanghai Mini-cyclotron based AMS

We present a modification to the ¹⁴C-dedicated SMCAMS (Shanghai mini-cyclotron based AMS) system to allow the measurement of ²⁶Al for biomedical applications with the existing devices. This is accomplished by determining the turn number, harmonic number and RF frequency theoretically and then making the appropriate orbit programming and beam optics calculation and experimental adjustments. The tests were conducted using pencil graphite (for the carbon pilot beam), Al₂O₃ powder and metal aluminum to accelerate ions with mass number of 24, 25, 26 and 27. The frequency response curves for those ions are shown. Finally, the Al₂O₃ standard sample with a known isotope ratio of 1.0 × 10⁻¹⁰ is measured. The ²⁶Al⁻ ions are detected and its frequency response curve shows the peak of ²⁶Al⁻ though very weak is well separated from the most neighboring interfering molecular ions ²⁵MgH⁻.     

A D-D neutron generator using a titanium drive-in target

A D-D neutron generator was developed with an intensity of 10⁸ n/s. A helicon plasma ion source was used to produce a large current deuteron beam, and neutrons were generated by irradiating the deuteron beam on a titanium drive-in target made of commercial pure titanium. The neutron generator was test-run for several hundred hours, and the performances were investigated. The available range of the deuteron beam current was 0.8-8 mA and the beam could be accelerated up to 97.5 keV. The maximum neutron generation rate in the test-runs was 1.9 × 10⁸ n/s, which was achieved by irradiating a 7.6 mA deuteron beam at 94.0 keV on a 0.5 mm-thick target. The operation of the neutron generator was fairly stable, such that the neutron generation rate was not altered by high voltage breakdowns during the test-runs. Neutron generation efficiency was rated as low as 10% when compared to an ideal case of irradiating a 100% monatomic deuteron beam on a perfect TiD₂ target. Factors causing the low efficiency were suggested and discussed.     

Effect of ion beam irradiation on magnetic and structural properties of Pt/Cr/Co multilayers

This paper discusses the effect of ion beam irradiation on the magnetic and structural properties of Pt/Cr/Co multilayers. We observe Co-Cr-Pt ternary alloy phase formation in 1 MeV N⁺ ion irradiated [Pt (2.5 nm)/Cr (0.8 nm)/Co (3.0 nm)]_×6/Si multilayers for a fluence of 1 × 10¹⁶ ions cm⁻² and beyond. The observed phase formation is accompanied by an enhancement in the average grain size, surface roughness and coercivity. Monte Carlo simulation has been performed to study ion-induced defect evolution and atomic displacements to correlate the above observed effects.     

Imaging dynamics of charge-auto-organisation in glass capillaries

Multiply charged ion beam transmission through insulating capillaries is today a very active field of research. Thanks to the work of several groups during the last five years, several features of this unexpected process have been evidenced. The open challenge is to understand and control the self-organized charging-up of the capillary walls, which leads finally to the ion transmission. Up to now, the specific charge distribution on the inner surface, as well as the dynamics of the build-up, are still to be understood. While capillaries usually studied are microscopic pore networks etched in different materials, our concern is in macroscopic single capillaries made of glass. With a length of several centimeters and a diameter of a few micrometers at the exit, these capillaries have nevertheless the same aspect ratio as the etched pores (length/diameter ≈ 100). One of the leading goals of this research on single capillaries is to produce multi-charged ion beams with diameters smaller than a micrometer (nano-beams). These glass capillaries offer the opportunity to be used as an ion funnel due to their amazing properties of guiding and focusing highly charged ion beams without altering neither their initial charge state nor the beam emittance (<10⁻³ π mm mrad). However, the understanding of the underlying process is not complete and relies on models assuming charge patches distributed along the capillary and which still need to be tested. We present the first observation imaging the dynamics of the charging-up process in single glass capillaries. During the build-up of the self-organized charge deposition on the capillary walls, the 230 keV Xe²³⁺ transmitted beam is deflected back and forth several times as the outgoing current increases. This is in agreement with the picture of charge patches created sequentially along the capillary and thus deflecting the beam until a stationary state is reached.     

A sextupole ion beam guide to improve the efficiency and beam quality at IGISOL

The laser ion source project at the IGISOL facility, Jyväskylä, has motivated the development and construction of an rf sextupole ion beam guide (SPIG) to replace the original skimmer electrode. The SPIG has been tested both off-line and on-line in proton-induced fission, light-ion and heavy-ion induced fusion-evaporation reactions and, in each case, has been directly compared to the skimmer system. For both fission and light-ion induced fusion, the SPIG has improved the mass-separated ion yields by a factor of typically 4-8. Correspondingly, the transmission efficiency of both systems has been studied in simulations with and without space charge effects. The transport capacity of the SPIG has been experimentally determined to be ∼10¹² ions s⁻¹ before space charge effects start to take effect. A direct comparison with the simulation has been made using data obtained via light-ion fusion evaporation. Both experiment and simulation show an encouraging agreement as a function of current extracted from the ion guide.     

Si nanocrystals formation by a new ion implantation device

Metallic and non-metallic ion beams can be used to modify the properties of wafer surfaces if accelerated at moderate energies. We developed a new “implantation machine” able to generate ions and to accelerate them up to 80 kV. The ion generation is achieved by a laser-plasma source which creates plasma in expansion. The device consists of a KrF excimer laser and a generating vacuum chamber made of stainless steel. The laser energy was 45 mJ/pulse with a power density of 2.25 × 10⁸ W/cm². The target was kept to positive voltage to accelerate the produced ions. The ion dose was estimated by a fast polarised Faraday cup. This machine was utilised to try synthesizing silicon nanocrystals in SiO₂ matrix. Preliminary results of Si nanocrystals formation and the glancing-angle X-ray diffraction analyses are reported.     

Strain-driven (0 0 2) preferred orientation of ZnO nanoparticles in ion-implanted silica

We present an experimental and theoretical study on the structural properties of ZnO nanoparticles embedded in silica. The ZnO-SiO₂ nanocomposite was prepared by ion implanting a Zn⁺ beam in a silica slide and by annealing in oxidizing atmosphere at 800 °C. From an experimental point of view, the structural properties of the ZnO-SiO₂ nanocomposite were studied by using glancing incidence X-ray diffraction. According to the results, zinc crystalline nanoclusters with an average diameter of 13 nm are in the as-implanted sample. The annealing in oxidizing atmosphere promotes the total oxidation of the Zn nanoclusters and increases their size until to an average of 22 nm. Moreover, the formed ZnO nanocrystals have a preferential (0 0 2) crystallographic orientation. From a theoretical point of view, the preferential orientation of the ZnO nanoparticles can be explained satisfactory by the minimization of the strain energy of the nanoparticles placed in proximity of the surface of the matrix.     

The use of HI-ERDA/RBS and NRA/RBS to depth profile N in GaAs1−xNx thin films

N profiles of several GaAs_1−xN_x epitaxial layers with different N mole fractions in the range 0 < x < 0.14 were obtained by using (1) heavy-ion elastic recoil detection analysis (HI-ERDA) along with Rutherford backscattering spectrometry (RBS) using a 35 MeV Si⁶⁺ beam, and (2) nuclear reaction analysis (NRA) with the ¹⁴N(α, p)¹⁷O reaction, also with RBS, using a 3.7 MeV ⁴He⁺ beam. The results from the two techniques are compared and the advantages, disadvantages and capabilities are discussed.     

A tunable collimator for precision irradiation with ion microbeams

We describe a cheap yet effective beam collimation system capable of providing square apertures from 1 mm down to about 10 μm. The tunable part is driven by two manual micrometers, one controlling the shape the other the size, which could be immediately replaced by high precision stepping motors should remote control be needed. The aperture was calibrated by means of a simple home-made laser diffraction system which allows a considerable precision. The collimation system was used to produce low-divergence beams of oxygen and protons, in order to test the position sensitivity of a silicon microstrip telescope detector.     

A systematic study on analysis-induced radiation damage in silicon during channeling Rutherford backscattering spectrometry analysis

Channeling Rutherford backscattering spectrometry (RBS) is an essential analysis technique in materials science. However, the accuracy of RBS can be significantly affected by disorders in materials induced by the analyzing ion beam even under channeling mode. We have studied RBS analysis-induced radiation damage in silicon. A 140-keV H⁺ ion beam was incident along 〈1 0 0〉 Si axis at room temperature to a fluence ranging from 1.6 × 10¹⁶ cm⁻² to 7.0 × 10¹⁶ cm⁻². The evolution of the aligned yields versus fluences has been examined and found to agree well with a model proposed by us.     

C and D reemission from mixed W-C-D layers during single-species and simultaneous irradiations of W with C and D

We present new experimental results on the reemission of C and D from tungsten during single-species and simultaneous irradiations with 6 keV C⁺ and 1 keV D⁺ ion beams. The relatively low C fraction in the combined total beam flux (∼4.5% C⁺/[C⁺ + D⁺]) was selected to prevent the formation of a carbon over-layer during C⁺ irradiation. The results show that the temperature dependence of D reemission from a mixed W-C-D surface is similar to that from pure W. In the case of a mixed W-C surface, the reemission of C was much lower than observed for pure carbon. Post-irradiation XPS analysis of the chemical bonding states of a W specimen irradiated at 973 K with 6 keV C⁺ shows that carbon in the mixed W-C surface is primarily in the form of WC.