Desorption of gold nanoclusters (2-30 nm) under low excitation of their electronic subsystem by Ar ions (14 keV/nm)

Gold nanodispersed targets with islands-grains sized 2-30 nm were irradiated by Ar⁷⁺ ions with the energy of 45.5 MeV and (dE/dx)_e = 14.2 keV/nm in gold. The desorbed gold nanoclusters were studied by TEM method. For all the targets desorption of intact gold nanoclusters is observed. However, for inelastic stopping of monatomic Ar ions in gold of 14.2 keV/nm desorption of nanoclusters is observed only up to ∼25 nm. The yield of the desorbed nanoclusters considerably decreases from 3 to 0.02 cluster/ion with the increase of the mean size of the desorbed nanoclusters from 3 to 14.2 nm. The results are discussed.     

Desorption of nanoclusters from gold nanodispersed layers by 72 keV Au400 ions: Experiment and molecular dynamics simulation

The interaction of 72 keV Au₄₀₀ ions (with a diameter of approximately 2 nm) with nanodispersed gold targets has been studied. These interactions are dominated by elastic collisions. The gold nanodispersed target with 2-12 nm nanoislets was bombarded with a fluence of 1.7 × 10¹² ions/cm². The desorbed nanoclusters were collected on carbon foils supported by TEM-grids. Intact 29 nm gold nanoclusters were found on the collectors. The desorption yield (normalized to the total cross-section of the projectile-cluster interaction) was estimated to be 0.62 nanocluster/projectile. Preliminary estimates were made using molecular dynamic simulations for comparison with the experimental results.     

Fundamentals of surfactant sputtering

We introduce a new sputter technique, utilizing the steady-state coverage of a substrate surface with up to 10¹⁶ cm⁻² of foreign atoms simultaneously during sputter erosion by combined ion irradiation and atom deposition. These atoms strongly modify the substrate sputter yield on atomic to macroscopic length scales and therefore act as surfactant atoms (a blend of “surface active agent”). Depending on the surfactant-substrate combination, the novel technique allows enhanced surface smoothing, generation of novel surface patterns, shaping of surfaces and formation of ultra-thin films. Sputter yield attenuation is demonstrated for sputtering of Si and Fe substrates and different surfactant species using 5 keV Xe ions at different incidence angles and fluences up to 10¹⁷ cm⁻². Analytical approaches and Monte Carlo simulations are used to predict the sputtering yield attenuation as function of surfactant coverage. For sputtering of Si with Au surfactants we observe high sputter yields despite a steady-state surfactant coverage, which can be explained by strong ion-induced interdiffusion of substrate and surfactant atoms and the formation of a buried Au_xSi surfactant layer in dynamic equilibrium.     

Sputtering of clusters from copper-gold alloys

Polycrystalline Cu, Cu₂₀Au₈₀, Cu₄₀Au₆₀, Cu₈₀Au₂₀ and Au samples were bombarded with 15 keV Ar⁺, and the resulting secondary neutral yield distribution was studied by non-resonant laser post-ionisation mass spectrometry. Neutral clusters containing up to 15 atoms were observed for the targets. The yield of neutral clusters, Cu_mAu_n−m, containing n atoms, Y_n, was found to follow a power in n, i.e. Y_n∝n^-δ, where the exponent δ varied from 5.2 to 10.1. For a fixed n, the cluster yields showed a variation with number of copper atoms, m, much greater than expected for a binomial distribution suggesting that the clusters are not formed randomly above the surface and a component of preformed cluster emission occurs. In addition, the cluster compositions from the sputtered alloys were indicative of sputtering from a copper rich surface.     

Saturable absorption in gold implanted fused silica

Metal nanocluster composite glasses (MNCGs) have been the subject of both experimental and theoretical investigation because of their peculiar optical properties. In particular, the enhanced third order optical nonlinearity could be exploited in the all-optical switching device technology. In the present work, we present some results on MNCG films prepared by ion implantation. Fused silica were implanted with Au⁺ of fluences 3 × 10¹⁶ and 1 × 10¹⁷ ions/cm² using an energy of 1.5 MeV. Optical absorption spectra of these samples have revealed prominent linear absorption bands at characteristic surface plasmon resonance (SPR) wavelength at and around 490 nm. Rutherford backscattering spectrometry (RBS) measurements reveal a Gaussian spatial distribution of Au ions. Third order optical nonlinear properties were studied by the Z-scan technique using a nanosecond laser. Z-scan measurements on the metal nanoclusters glass composites have revealed saturable absorption signifying the nonlinear responses.     

Ion induced segregation in gold nanostructured thin films on silicon

We report a direct observation of segregation of gold atoms to the near surface regime due to 1.5 MeV Au²⁺ ion impact on isolated gold nanostructures deposited on silicon. Irradiation at fluences of 6 × 10¹³, 1 × 10¹⁴ and 5 × 10¹⁴ ions cm⁻² at a high beam flux of 6.3 × 10¹² ions cm⁻² s⁻¹ show a maximum transported distance of gold atoms into the silicon substrate to be 60, 45 and 23 nm, respectively. At a lower fluence (6 × 10¹³ ions cm⁻²) transport has been found to be associated with the formation of gold silicide (Au₅Si₂). At a high fluence value of 5 × 10¹⁴ ions cm⁻², disassociation of gold silicide and out-diffusion lead to the segregation of gold to defect - rich surface and interface regions.     

Dynamics of cluster induced sputtering in gold

Impacts of 0.13-1.4 MeV Au₁₃ clusters onto Au(1 1 1) target are investigated in molecular dynamics simulations. The evolution of sputtered Au atoms and clusters are simulated up to 10 ns. The total sputtering yield, angular and velocity distributions of the sputtered material, as well as dimensions of impact induced craters are compared to recent experimental results. It is shown that the experimental observations can be explained by a flow of atoms from the craters. Secondary cluster ejection from crowns formed around the craters is found to be one of the main mechanisms of sputtering. The results are summed up in an empirical model.     

Nonlinear optical properties of MeV and keV ion beam synthesized Ag nanoclusters

Ag nanoclusters embedded in silica glass matrix have been synthesized by high fluence ion implantation using both keV and MeV ion beams. In keV implantation case, optical absorption shows an intense surface plasmon resonance (SPR) peak corresponding to the Ag clusters formed in the matrix. Transmission electron microscopy (TEM) measurements carried out on identically implanted SiO₂ thin films on a TEM catcher grid shows the presence of Ag nanoclusters of size around 4 nm in the matrix. However, for the MeV implantation case, the SPR peak appears in the optical absorption spectra only after air annealing the sample at 500 °C for one hour. For the annealed samples, TEM measurements show the presence of 6 nm sized Ag nanoclusters. On the other hand the as-implanted sample shows smaller nanoclusters with a lower particle density in the matrix. Interestingly, open aperture z-scan measurements carried out on keV implanted samples did not show any nonlinear absorption, while the MeV as-implanted as well as annealed samples showed nonlinear absorption. The nonlinear absorption coefficient of the MeV annealed sample is extracted from a fit to the z-scan data considering a three photon like absorption process.     

Change in magnetic properties of MgB2 thin films after irradiation by 200 MeV Au ion beam

The SHI irradiation induced effects on magnetic properties of MgB₂ thin films are reported. The films having thickness 300-400 nm, prepared by hybrid physical chemical vapor deposition (HPCVD) were irradiated by 200 MeV Au ion beam (S_e ∼ 23 keV/nm) at the fluence 1 × 10¹² ion/cm². Interestingly, increase in the transition temperature T_c from 35.1 K to 36 K resulted after irradiation. Substantial enhancement of critical current density after irradiation was also observed because of the pinning provided by the defects created due to irradiation. The change in surface morphology due to irradiation is also studied.     

Dependence of cluster ranges on target cohesive energy: Molecular-dynamics study of energetic Au402 cluster impacts

It has long been known that the stopping and ranges of atoms and clusters depends on the projectile-target atom mass ratio. Recently, Carroll et al. [S.J. Carroll, P.D. Nellist, R.E. Palmer, S. Hobday, R. Smith, Phys. Rev. Lett. 84 (2000) 2654] proposed that the stopping of clusters also depends on the cohesive energy of the target. We investigate this dependence using a series of molecular-dynamics simulations, in which we systematically change the target cohesive energy, while keeping all other parameters fixed. We focus on the specific case of Au₄₀₂ cluster impact on van-der-Waals bonded targets. As target, we employ Lennard-Jones materials based on the parameters of Ar, but for which we vary the cohesive energy artificially up to a factor of 20. We show that for small impact energies, E₀ ? 100 eV/atom, the range D depends on the target cohesive energy U, D ∝ U^−β. The exponent β increases with decreasing projectile energy and assumes values up to β = 0.25 for E₀ = 10 eV/atom. For higher impact energies, the cluster range becomes independent of the target cohesive energy. These results have their origin in the so-called ‘clearing-the way’ effect of the heavy Au₄₀₂ cluster; this effect is strongly reduced for E₀ ? 100 eV/atom when projectile fragmentation sets in, and the fragments are stopped independently of each other. These results are relevant for studies of cluster stopping and ranges in soft matter.     

Proton beam induced luminescence of silicon dioxide implanted with silicon

Light emission from a silicon dioxide layer enriched with silicon has been studied. Samples used had structures made on thermally oxidized silicon substrate wafers. Excess silicon atoms were introduced into a 250-nm-thick silicon dioxide layer via implantation of 60 keV Si⁺ ions up to a fluence of 2 × 10¹⁷ cm⁻². A 15-nm-thick Au layer was used as a top semitransparent electrode. Continuous blue light emission was observed under DC polarization of the structure at 8-12 MV/cm. The blue light emission from the structures was also observed in an ionoluminescence experiment, in which the light emission was caused by irradiation with a H₂⁺ ion beam of energy between 22 and 100 keV. In the case of H₂⁺, on entering the material the ions dissociated into two protons, each carrying on average half of the incident ion energy. The spectra of the emitted light and the dependence of ionoluminescence on proton energy were analyzed and the results were correlated with the concentration profile of implanted silicon atoms.     

Simulating radiation damage in Ga stabilised δ-Pu

Radiation events in Ga stablised δ-Pu are investigated by means of Molecular Dynamics simulations. Pu 5 at.% Ga is considered using the Modified Embedded Atom Method to govern the atomic interactions. Cascades were initiated with Primary Knock-on Atom (PKA) energies in the range of 0.4-10 keV, with trajectories deduced through comprehensive sampling of a representative set of directions, combined with different Ga atomic positions. The displacement threshold energy, E_d, for Pu and Ga atoms was also determined through similar extensive studies to aid the understanding and interpretation of the cascade results.Values of E_d between 5 and 40 eV were determined for Pu, with Ga PKAs requiring generally more energy to create a defect with E_d between 8 and 70 eV. Low energy collision cascades, initiated with energies in the range of 0.4-1 keV, show that the cascades form in a similar manner to other fcc metals with a vacancy rich zone surrounded by isolated interstitial defects. A feature of these cascades is that the displaced Ga atoms return to lattice sites during the ballistic phase, leading to a lack of Ga-type residual defects. Higher energy cascades show similar features but with the development of an amorphous region at the cascade core of around 5 nm diameter at 5 keV. Quantitatively, the residual number of defects found shows no distinct variation to that for previous work on pure Pu, suggesting the inclusion of Ga does not significantly effect the susceptibility or resistance of Pu to initial cascade development.     

Mechanism of elongation of gold or silver nanoparticles in silica by irradiation with swift heavy ions

It has been reported that elongated Au nanoparticles oriented parallel to one another can be synthesized in SiO₂ by ion irradiation. Our aim was to elucidate the mechanism of this elongation. We prepared Au and Ag nanoparticles with a diameter of 20 nm in an SiO₂ matrix. It was found that Au nanoparticles showed greater elongated with a higher flux of ion beam and with thicker SiO₂ films. In contrast, Ag nanoparticles split into two or more shorter nanorods aligned end to end in the direction parallel to the ion beam. These experimental results are discussed in the framework of a thermal spike model of Au and Ag nanorods embedded in SiO₂. The lattice temperature exceeds the melting temperatures of SiO₂, Au and Ag for 100 ns after one 110 MeV Br¹⁰⁺ ion has passed through the middle of an Au or Ag nanorod.     

Evolution of the nanostructure of VVER-1000 RPV materials under neutron irradiation and post irradiation annealing

A high nickel VVER-1000 (15Kh2NMFAA) base metal (1.34 wt% Ni, 0.47% Mn, 0.29% Si and 0.05% Cu), and a high nickel (12Kh2N2MAA) weld metal (1.77 wt% Ni, 0.74% Mn, 0.26% Si and 0.07% Cu) have been characterized by atom probe tomography to determine the changes in the microstructure during neutron irradiation to high fluences. The base metal was studied in the unirradiated condition and after neutron irradiation to fluences between 2.4 and 14.9 × 10²³ m⁻² (E > 0.5 MeV), and the weld metal was studied in the unirradiated condition and after neutron irradiation to fluences between 2.4 and 11.5 × 10²³ m⁻² (E > 0.5 MeV). High number densities of ∼2-nm-diameter Ni-, Si- and Mn-enriched nanoclusters were found in the neutron irradiated base and weld metals. No significant copper enrichment was associated with these nanoclusters and no copper-enriched precipitates were observed. The number densities of these nanoclusters correlate with the shifts in the ΔT_{41 J} ductile-to-brittle transition temperature. These nanoclusters were present after a post irradiation anneal of 2 h at 450 °C, but had dissolved into the matrix after 24 h at 450 °C. Phosphorus, nickel, silicon and to a lesser extent manganese were found to be segregated to the dislocations.     

Fabrication of hollow nanoclusters by ion implantation

Ag ions with four kinds of energies were implanted into silica to doses of 5 × 10¹⁶ and 1 × 10¹⁷ ions/cm², respectively. Hollow Ag nanoclusters were observed in the 1 × 10¹⁷ Ag⁺ ions/cm² implanted samples with energies of 150 and 200 keV. The evolution of hollow nanoclusters during annealing was carried out by in situ transmission electron microscopy observation. The energy dependence for the formation of hollow nanoclusters is studied. A potential mechanism for the formation of irradiation-induced nanovoids in nanoclusters is discussed.     

Fabrication of hollow Ag nanoclusters in silica by irradiation with Ar ions

Ion irradiation is an effective method to control the morphology, size and distribution of metal nanoclusters in substrates. In this work, Ag nanoclusters embedded in silica by 200 keV Ag⁺ ion implantation were irradiated at room temperature with Ar⁺ ions at 200 keV and 500 keV to different fluences. After irradiation, a transmission electron microscopy (TEM) study revealed that nanovoids are formed in the larger Ag nanoclusters. With the increase of fluence and energy of the Ar⁺ ions, the number and average size of the nanovoids grow combining with increases in the average size of the larger Ag nanoclusters within a projected range. During the ion irradiation process, the electronic energy and nuclear energy loss of the Ar⁺ ions determine the size of the hollow Ag nanoclusters and the change of the size and distribution of Ag nanoclusters in silica, leading to changes in the optical absorption spectra.     

Monte Carlo study of ion-induced backward and forward secondary electron emission from thin Al foil

A direct Monte Carlo program has been developed to calculate the backward (γ_b) and forward (γ_f) electron emission yields from 20 nm thick Al foil for impact of C⁺, Al⁺, Ar⁺, Cu⁺ and Kr⁺ ions having energies in the range of 0.1-10 keV/amu. The program incorporates the excitation of target electrons by projectile ions, recoiling target atoms and fast primary electrons. The program can be used to calculate the electron yields, distribution of electron excitation points in the target and other physical parameters of the emitted electrons. The calculated backward electron emission yield and the Meckbach factor R = γ_f/γ_b are compared with the available experimental data, and a good agreement is found. In addition, the effect of projectile energy and mass on the longitudinal and lateral distribution of the excitation points of the electrons emitted from front and back of Al target has been investigated.     

Damage creation in ion irradiated Si1−xGex/Si structures

Strained SiGe/Si structures have been proposed as substrates for fabrication of high speed metal oxide semiconductor transistors. However, influence of strain and/or presence of Ge atoms on damage creation during ion irradiation have not been explored to a significant extent. In this study, Rutherford backscattering spectrometry (RBS) was used to characterize Si_1−xGe_x/Si structures irradiated by 140 keV He⁺ ions at room temperature. When compared with pure Si, strained samples show enhanced damage accumulation as a function of He fluence. Channeling angular scans did not reveal any specific configuration of displacements. Possible mechanisms for enhanced damage in strained Si are discussed.     

Determination of mass attenuation coefficients, effective atomic and electron numbers for Cr, Fe and Ni alloys at different energies

The total mass attenuation coefficients (μ_m), for Cr, Fe, Ni and Fe_xNi_1−x (x = 0.8, 0.7, 0.6, 0.5, 0.4, 0.3 and 0.2), Fe_xCr_yNi_1−(x+y) (x = 0.7, y = 0.1; x = 0.5, y = 0.2; x = 0.4, y = 0.3; x = 0.3, y = 0.3; x = 0.2, y = 0.2 and x = 0.1, y = 0.2) and Ni_xCr_1−x (x = 0.8, 0.6, 0.5, 0.4 and 0.2) alloys were measured at 22.1, 25.0, 59.5 and 88.0 keV photon energies. The samples were irradiated with 10 mCi Cd-109 and 100 mCi Am-241 radioactive point source using transmission arrangement. The γ- and X-rays were counted by a Si(Li) detector with a resolution of 160 eV at 5.9 keV. Total atomic and electronic cross-sections (σ_t and σ_e), effective atomic and electron numbers (Z_eff and N_eff) were determined experimentally and theoretically using the obtained mass attenuation coefficients for investigated 3d alloys. The theoretical mass attenuation coefficients of each alloy were estimated using mixture rule. The experimental values were compared with the calculated values for all samples.     

Incidence-angle dependent Cs incorporation in Si during low-energy bombardment: A dynamic computer simulation study

The implantation of Cs atoms in silicon was investigated by dynamic computer simulations using the Monte-Carlo code T-DYN that takes into account the gradual change of the target composition due to the Cs irradiation. The incorporation of Cs atoms was studied for incidence angles ranging from 0° to 85° and for four impact energies (0.2, 0.5, 1 and 3 keV). The total implantation fluences were (1-2) × 10¹⁷ Cs/cm², well above the values required to reach a stationary state. The steady-state Cs surface concentrations exhibit a pronounced dependence on impact angle and energy. At normal incidence, they vary between ∼0.57 (at 0.2 keV) and ∼0.18 (3 keV), but decrease with increasing incidence angle. Under equilibrium, the partial sputtering yield of Si exhibits the typical dependence on incidence angle, first increasing up to a maximum value (at ∼70°-75°) and declining sharply for larger angles. For all irradiation conditions a strongly preferential sputtering of Cs as compared to Si atoms is found, increasing with decreasing irradiation energy (from 4.6 at 3 keV to 7.2 at 0.2 keV) and for nearer-normal incidence.