Fabrication and nuclear analysis of isotopic N and N ion-implanted silicon standards

The fabrication of reliable isotopic nitrogen standards is achieved in Si through ¹⁴N and ¹⁵N ion implantation. 60 keV and ions were implanted at 400 °C up to ∼60% peak atomic concentration, yielding nitrogen-saturated silicon layers as measured using resonant nuclear reaction analysis. No isotopic effect has been observed. The nitrogen standards are validated by measurements of stability under ion irradiation. No significant desorption of nitrogen is observed either under a ⁴He⁺ ion fluence of 3.36 × 10¹⁶ cm⁻² or under a ¹H⁺ ion fluence of 8.60 × 10¹⁷ cm⁻², giving strong evidence that isotopic nitrogen standards can be achieved.     

Secondary ion emission from Cu(1 0 0) surfaces with atomic adsorbates (N, O, Cl, S and Br)

Several targets that consist of atomic species X (X = N, O, Cl, S, Br) adsorbed at hollow sites on the Cu(1 0 0) surface have been examined with low-fluence secondary ion mass spectrometry (SIMS). The positive and negative secondary ion (SI) abundance distributions, which show a range of characteristics, have been discussed with the aid of thermochemical data derived from ab initio calculations. In positive SIMS, CuX⁺ is never observed, while the only heteronuclear (mixed-atom) SI that is observed for all five systems is Cu₂X⁺. In negative SIMS, the dominant heteronuclear species for all systems is , except for N/Cu(1 0 0), which produces no , ions. Cu⁻ emission is observed only for O/Cu(1 0 0). By analogy with results from laser ablation studies of O/Cu targets, it is conjectured that Cu⁻ is a daughter product of the gas-phase dissociation of polyatomic Cu-O anion clusters.     

Deuterium retention in plasma spray tungsten coatings exposed to low-energy, high flux D plasma

Two types of porous plasma spray tungsten coatings deposited onto stainless steel and graphite substrates were exposed to low-energy (76 eV ), high-flux (10²² D/m² s) D plasma to ion fluences of (3-4) × 10²⁶ D/m² at various temperatures. Deuterium retention in the W coatings was examined by thermal desorption spectroscopy and the D(³He,p)⁴He nuclear reaction, allowing determination of the D concentration at depths up to 7 μm. The relatively high D concentration (above 0.1 at.%) at depths of several micrometers observed after D plasma exposure at 340-560 K can be related to accumulation of D₂ molecules in pores, while at temperatures above 600 K deuterium is accumulated mainly in the form of D atoms chemisorbed on the inner pore surfaces. At exposure temperatures above 500 K, the D retention in the plasma spray W coating on graphite substrate increases significantly due to trapping of diffusing D atoms at carbon dangling bonds located at the edge of a graphite crystallite.     

Saturation in deuterium retention of CFC graphite targets exposed to beryllium-seeded plasmas on PISCES-B

ITER strike-plates are foreseen to be of carbon-fiber-composite (CFC). In this study the CFC bulk deuterium retention in ITER-relevant conditions is investigated. DMS 701 (Dunlop) CFC targets were exposed to plasma in PISCES-B divertor plasma simulator. Samples were exposed to both pure deuterium plasma and beryllium-seeded plasma at high fluences (up to ) and high surface temperature (1070 K). The deuterium contents of the exposed samples have been measured using both thermal-desorption-spectrometry (TDS) during baking at 1400 K and ion beam nuclear reaction analysis (NRA). The total deuterium inventory has been obtained from TDS while NRA measured the deuterium depth distribution. In the analysed fluence range at target temperature of 1070 K, no fluence dependence was observed. The measured released deuterium is . In the case of target exposure with beryllium-seeded plasma no change in the released amount of deuterium was found. The deuterium concentration inside the samples is almost constant until the probed depth of ?m, except in the first 1 μm surface layer, where it is 5 times higher than in the bulk. No C erosion/redeposition was observed in the Be-seeded plasma cases. The measured retention, applied to 50 m² of ITER CFC surface, would imply a tritium saturated value of 0.3 gT, much lower than the ITER safety limit of 350 g.     

Radiation induced defects in BaBPO5:Ce and their role in thermally stimulated luminescence reactions: EPR and TSL investigations

Defect centers induced by gamma irradiation in Ce doped BaBPO₅ were investigated using EPR spectroscopy. From EPR studies, three phosphorous centered radicals were characterized on the basis of observed ³¹P hyperfine splitting and g values as , and radicals. In addition to this, two types of boron oxygen hole centers (BOHC) and O⁻ were also formed at room temperature. An intense broad signal in sample annealed in argon (g_⊥ = 1.9258 and g_‖ = 1.8839) was assigned to Ce³⁺ ions associated with the electron trapped at anion vacancy or nearby lattice defect. TSL studies showed two glow peaks, a relatively weaker one at 425 K and an intense one at 575 K. Spectral studies of the TSL glow peaks have shown that Ce³⁺ ion acts as emission center. From the temperature dependence of the EPR spectra of gamma irradiated samples, the glow peaks at 425 K and 575 K were attributed to thermal destruction of /O⁻ and BOHC, respectively, by trapping of electrons from elsewhere. The energy released in electron hole recombination process is used for the excitation of Ce³⁺ ions resulting in these glow peaks at 425 K and 575 K. The spectral studies of the TSL glow peaks have shown emission at 330 nm indicating Ce³⁺ acts as the luminescent centre. The trap depth and the frequency factor for the 425 K and 575 K peaks were determined using different heating rates method.     

Ion beam induced defects in solids studied by optical techniques

Optical methods can provide important insights into the mechanisms and consequences of ion beam interactions with solids. This is illustrated by four distinctly different systems.X- and Y-cut LiNbO₃ crystals implanted with 8 MeV Au³⁺ ions with a fluence of 1 × 10¹⁷ ions/cm² result in gold nanoparticle formation during high temperature annealing. Optical extinction curves simulated by the Mie theory provide the average nanoparticle sizes. TEM studies are in reasonable agreement and confirm a near-spherical nanoparticle shape but with surface facets. Large temperature differences in the nanoparticle creation in the X- and Y-cut crystals are explained by recrystallisation of the initially amorphised regions so as to recreate the prior crystal structure and to result in anisotropic diffusion of the implanted gold.Defect formation in alkali halides using ion beam irradiation has provided new information. Radiation-hard CsI crystals bombarded with 1 MeV protons at 300 K successfully produce F-type centres and V-centres having the structure as identified by optical absorption and Raman studies. The results are discussed in relation to the formation of interstitial iodine aggregates of various types in alkali iodides. Depth profiling of and aggregates created in RbI bombarded with 13.6 MeV/A argon ions at 300 K is discussed.The recrystallisation of an amorphous silicon layer created in crystalline silicon bombarded with 100 keV carbon ions with a fluence of 5 × 10¹⁷ ions/cm² during subsequent high temperature annealing is studied by Raman and Brillouin light scattering.Irradiation of tin-doped indium oxide (ITO) films with 1 MeV protons with fluences from 1 × 10¹⁵ to 250 × 10¹⁵ ions/cm⁻² induces visible darkening over a broad spectral region that shows three stages of development. This is attributed to the formation of defect clusters by a model of defect growth and also high fluence optical absorption studies. X-ray diffraction studies show evidence of a strained lattice after the proton bombardment and recovery after long period storage. The effects are attributed to the annealing of the defects produced.     

Measurement of radiation-enhanced diffusion of La in single crystal thin film CeO2

The diffusion of La, a trivalent cation dopant, actinide surrogate, and high-yield fission product, in CeO₂, a UO₂ nuclear fuel surrogate, during 1.8 MeV Kr⁺ ion bombardment over a temperature range from 673 K to 1206 K has been measured with secondary ion mass spectroscopy. The diffusivity under these irradiation conditions has been analyzed with a model based on a combination of sink-limited and recombination-limited kinetics. This analysis yielded a cation vacancy migration energy of  ∼ 0.4 eV below ∼800 K, were recombination-limited kinetics dominated the behavior. The thermal diffusivity of La in the same system was measured over a range of 873-1073 K and was characterized by an activation enthalpy of . The measurement of both the migration enthalpy and total activation enthalpy separately allows the vacancy formation enthalpy on the cation sublattice to be determined;  ∼ 1 eV. The mixing parameter under energetic heavy-ion bombardment at room temperature was measured as well and found to be ∼4 × 10⁻⁵ nm⁵/eV.     

The morphology and structure of one-dimensional carbon-carbon composite under high-fluence ion irradiation

The temperature dependences of the ion-induced electron emission yield γ(T), the crystal structure, and the morphology of a surface layer of the one-dimensional carbon fiber composite KUP-VM (1D) under high-fluence (10¹⁸-10¹⁹ ion/cm²) irradiation with 30 keV ions at normal incidence both perpendicular and parallel to the fiber directions have been studied. The target temperature has been varied during continuous irradiation from T = −180 to 400 °C. The surface analysis has been performed by the RHEED, SEM and RBS techniques. The surface microgeometry was studied using laser goniophotometry (LGP). It has been found that ion irradiation results in a loss of anisotropy of the surface layer structure because of amorphization at room temperature or recrystallization at a temperature higher than the ion-induced annealing temperature. The fiber morphology anisotropy remains under ion irradiation.     

Comparison of secondary ion emission yields for poly-tyrosine between cluster and heavy ion impacts

Emission yields of secondary ions necessary for the identification of poly-tyrosine were compared for incident ion impacts of energetic cluster ions (0.8 MeV , 2.4 MeV , and 4.0 MeV ) and swift heavy monoatomic molybdenum ions (4.0 MeV Mo⁺ and 14 MeV Mo⁴⁺) with similar mass to that of the cluster by time-of-flight secondary ion mass analysis combined with secondary ion electric current measurements. The comparison revealed that (1) secondary ion emission yields per impact increase with increasing incident energy within the energy range examined, (2) the 4.0 MeV impact provides higher emission yields than the impact of the monoatomic Mo ion with the same incident energy (4.0 MeV Mo⁺), and (3) the 2.4 MeV impact exhibits comparable emission yields to that for the Mo ion impact with higher incident energy (14 MeV Mo⁴⁺). Energetic cluster ion impacts effectively produce the characteristic secondary ions for poly-tyrosine, which is advantageous for highly sensitive amino acid detection in proteins using time-of-flight secondary ion mass analysis.     

380 keV proton irradiation effects on photoluminescence of Eu-doped GaN

The effect of 380 keV proton irradiation on the photoluminescence (PL) properties has been investigated for undoped and Eu-doped GaN. As the proton irradiation exceeds , a drastic decrease of PL intensity of the near band-edge emission of undoped GaN was observed. On the other hand, for Eu-doped GaN, the PL emission corresponding to the ⁵D₀→⁷F₂ transition in Eu³⁺ kept the initial PL intensity after the proton irradiation up to . Present results, together with our previous report on electron irradiation results, suggest that Eu-doped GaN is a strong candidate for light emitting devices in high irradiation environment.     

Anisotropy of disorder accumulation and recovery in 6H-SiC irradiated with Au ions at 140 K

Single crystal 〈0 0 0 1〉-oriented 6H-SiC was irradiated with Au²⁺ ions to fluences of 0.032, 0.058 and 0.105 ions/nm² at 140 K and was subsequently annealed at various temperatures up to 500 K. The relative disorder on both the Si and C sublattices has been determined simultaneously using in situ D⁺ ion channeling along the 〈0 0 0 1〉 and 〈〉 axes. A higher level of disorder on both the Si and C sublattices is observed along the 〈〉. There is a preferential C disordering and more C interstitials are aligned with 〈0 0 0 1〉. Room-temperature recovery along 〈〉 occurs, which is associated with the 〈0 0 0 1〉-aligned interstitials that annihilate due to close-pair recombination. Disorder recovery between 400 and 500 K is primarily attributed to annihilation of interstitials that are misaligned with 〈0 0 0 1〉 and to epitaxial crystallization. Effects of stacking order in SiC on disorder accumulation are insignificant; however, noticeable differences of low-temperature recovery in Au²⁺-irradiated 6H-SiC and 4H-SiC are observed.     

The emission process of secondary ions from solids bombarded with large gas cluster ions

We investigated the effects of size and energy of large incident Ar cluster ions on the secondary ion emission of Si. The secondary ions were measured using a double deflection method and a time-of-flight (TOF) technique. The size of the incident Ar cluster ions was between a few hundreds and several tens of thousands of atoms, and the energy up to 60 keV. Under the incidence of keV energy atomic Ar ions, mainly atomic Si ions were detected, whereas Si cluster ions were rarely observed. On the other hand, under the incidence of large Ar cluster ions, the dominant secondary ions were  (2 ? n ? 11). It has become clear that the yield ratio of secondary Si cluster ions was determined by the velocity of the incident cluster ions, and this strong dependence of the yield ratio on incident velocity should be related to the mechanisms of secondary ion emission under large Ar cluster ion bombardment.     

Monitoring the embrittlement of reactor pressure vessel steels by using the Seebeck coefficient

The degree of embrittlement of the reactor pressure vessel (RPV) limits the lifetime of nuclear power plants. Therefore, neutron irradiation-induced embrittlement of RPV steels demands accurate monitoring. Current federal legislation requires a surveillance program in which specimens are placed inside the RPV for several years before their fracture toughness is determined by destructive Charpy impact testing. Measuring the changes in the thermoelectric properties of the material due to irradiation, is an alternative and non-destructive method for the diagnostics of material embrittlement. In this paper, the measurement of the Seebeck coefficient () of several Charpy specimens, made from two different grades of 22 NiMoCr 37 low-alloy steels, irradiated by neutrons with energies greater than 1 MeV, and fluencies ranging from 0 up to 4.5 × 10¹⁹ neutrons per cm², are presented. Within this range, it was observed that increased by ≈500 nV/°C and a linear dependency was noted between and the temperature shift ΔT_41 J of the Charpy energy vs. temperature curve, which is a measure for the embrittlement. We conclude that the change of the Seebeck coefficient has the potential for non-destructive monitoring of the neutron embrittlement of RPV steels if very precise measurements of the Seebeck coefficient are possible.     

Photoluminescence study of swift heavy ion (SHI) induced defect centers in sapphire

Single crystals of sapphire (Al₂O₃: Fe, Ti, Cr) were irradiated at room temperature with different fluence of 100 MeV Ni ions. Photoluminescence (PL) spectra of pristine and irradiated sapphires were recorded at room temperature under 2.8 eV blue excitation. A broad emission band consists of two bands centered at 516 nm corresponding to F₂ defect center and 546 nm corresponding to defect center was observed. The intensity of these defect centers was found to vary with the fluence. defect center develops at low fluence reaching maximum at 5 × 10¹⁶ ions/m² and finally decreasing at higher fluence. The behavior is interpreted in terms of creation of defect centers, their clustering and annihilation.     

Ga NMR and magnetic susceptibility in δ-phase of Pu1−xGax (x = 0.05, x = 0.08) alloys

⁶⁹Ga nuclear magnetic resonance spectra, line shifts (⁶⁹K) and nuclear spin-lattice relaxation rate have been measured in the 20 years aged Pu_0.95Ga_0.05 and in fresh prepared Pu_0.92Ga_0.08 alloys, stabilized δ-phase, at magnetic field of 9.4 T in the temperature range (10-500) K. The line shift and are determined correspondingly by the static and fluctuating-in-time parts of the local magnetic field that originates in transferred hyperfine coupling the Ga nuclear spin with the nearest f-electron environment of more magnetic Pu.Temperature behavior of the resonance properties is found the same in fresh Pu_0.92Ga_0.08 and aged Pu_0.95Ga_0.05 alloy. The NMR results are in favor that δ-phase of Pu_1−xGa_x alloys represents at T > 200 K the Kondo lattice, in which the localized electronic spins fluctuate independently from each other without any macroscopic coherence. The coherent state like in heavy-fermion liquids emerges in Pu_0.95Ga_0.05 below T^∗ = 200 K. A little bit higher estimate of crossover temperature T^∗ = 250 K was founded for Pu_0.92Ga_0.08.     

Middle-frequency magnetron sputtering for GaN growth

A middle-frequency magnetron sputtering system was designed and constructed for GaN growth, in which a pair of back cooled pool-shaped twin magnetrons were used for Ga metal targets. GaN films were prepared using this system under various gas pressure (0.5-3.0 Pa) in a mixture of N₂ and Ar with N₂/Ar ratio of 6:1. X-ray diffraction showed that the GaN films had a strong (0 0 0 2) orientation, and the film deposited at 1.5 Pa had two more weak peaks attributed to and . The full width at half maximum (FWHM) of the (0 0 0 2) peak for the GaN film deposited at 1.5 Pa and 0.5 Pa is ∼721 and ∼986 arcsec, respectively. The deposition rate was in the range of 43.5-87.8 nm/min and was mainly influenced by the deposition pressure. The films deposited at higher pressures are columnar in structure. A root-mean-square roughness of 4.4 nm was obtained from the atomic force microscopy (AFM) surface morphology of the film deposited at 0.5 Pa.     

Atomic data and spectral line intensities for Ar XV

Electron impact collision strengths, energy levels, oscillator strengths, and spontaneous radiative decay rates are calculated for Ar XV. The configurations used are 2s², 2s2p, 2p², 2l3l^′, , with giving rise to 92 fine-structure levels in intermediate coupling. Collision strengths are calculated at eight incident energies (10, 20, 30, 60, 120, 180, 240, and 300 Ry) for transitions within the three lowest configurations, and five incident energies (60, 120, 180, 240, and 300 Ry) for transitions between the lowest five levels and the n = 3, 4, 5 configurations, using the distorted wave approximation. Excitation rate coefficients are calculated as a function of electron temperature by assuming a Maxwellian electron velocity distribution. Using the excitation rate coefficients and the radiative transition rates of the present work, and R-matrix results for the 2s², 2s2p, 2p² configurations available in the literature, statistical equilibrium equations for level populations are solved at electron densities covering the range of 10⁸-10¹⁴ cm⁻³ at an electron temperature of , corresponding to the maximum abundance of Ar XV. Spectral line intensities are calculated, and their diagnostic relevance is discussed. Observed line ratios indicate electron temperatures of the relevant emitting plasma close to . This dataset will be made available in the next version of the CHIANTI database.     

The investigation of energy loss and damage in polycarbonate induced by MeV carbon clusters

Carbon cluster ions (n = 1-5) and Cl⁺, Ti⁺, Ni⁺ ions were used to bombard polycarbonate (PC) films. By comparing the electronic energy loss and the number of chromophores at a fixed wavelength, we obtained the electronic energy loss S_e of carbon cluster ions in PC.