Proton elastic scattering and proton induced γ-ray emission cross-sections on Na from 2 to 5 MeV

Differential cross-sections for proton elastic scattering on sodium and for γ-ray emission from the reactions ²³Na(p,p′γ)²³Na (E_γ = 440 keV and E_γ = 1636 keV) and ²³Na(p,α′γ)²⁰Ne (E_γ = 1634 keV) were measured for proton energies from 2.2 to 5.2 MeV using a 63 μg/cm² NaBr target evaporated on a self-supporting thin C film.The γ-rays were detected by a 38% relative efficiency Ge detector placed at an angle of 135° with respect to the beam direction, while the backscattered protons were collected by a Si surface barrier detector placed at a scattering angle of 150°. Absolute differential cross-sections were obtained with an overall uncertainty estimated to be better than ±6.0% for elastic scattering and ±12% for γ-ray emission, at all the beam energies.To provide a convincing test of the overall validity of the measured elastic scattering cross-section, thick target benchmark experiments at several proton energies are presented.     

Proton induced γ-ray emission yields for the analysis of light elements in aerosol samples in an external beam set-up

The PIXE technique is a reliable tool for the characterisation of thin aerosol samples, but it can underestimate the lightest measurable elements, like Na, Mg, Al, Si and P, owing to the absorption of their X-rays inside the sample. The PIGE technique is a valid help to determine corrections for such effect: in order to perform PIGE measurements relative to thin reference standards in an external beam set-up, we measured, at the external beam facility of the Tandetron accelerator of the LABEC laboratory in Florence, the γ-ray yields as a function of the proton beam energy for the reactions ¹⁹F(p,p′γ)¹⁹F (E_γ = 110 and 197 keV), ²³Na(p,p′γ)²³Na (E_γ = 440 keV) and ²⁷Al(p,p′γ)²⁷Al (E_γ = 843 and 1013 keV), in the proton energy range from 3 to 5 MeV. The measured yields are shown, and the determined most suitable energies for performing PIGE quantification of Na and Al are reported, together with the corresponding minimum detection limits (MDLs). The results of some test on PIGE accuracy and an evaluation of self-absorption effects in PIXE measurements on thin aerosol samples are also presented.     

Improved energy resolution of a cyclotron beam for RBS measurements

For RBS (Rutherford Back Scattering) analysis, the quality of the beam is of premium importance because the depth profile resolution of the method is strongly dependent on the energy resolution of the probing beam. A magnetic analyzer, consisting of two 90 left-right bending magnets forming an achromatic doublet has been adapted to the Liege 20 MeV (proton) AVF (Azimuthal Varying Field) cyclotron. The energy resolution of that system has been measured by recording the resonance width of a ³²S(p,p′γ)³²S (3.38 MeV. p⁺ lab. energy). We have obtained a value of ΔE = ± 2 keV, reducing by a factor of 20 the natural dispersion of our cyclotron.We describe our magnetic analyzer system and present the results of our RBS measurements at energies up to 14 MeV α.     

Energy calibration of the 500 kV heavy ion implanter ionas

Gamma ray yield functions of (p, αγ) and (p, γ) resonance reactions on semi-thick ¹⁹F, ²³Na, ^24,26Mg and ²⁷Al targets were measured and used to calibrate the accelerating voltage and energy resolution of the new 500 kV heavy ion implanter at Göttingen. The energy spread of the proton beam was found to vary linearly with the accelerating voltage from ΔE(200 keV) = 55 eV fwhm to ΔE(500 keV) = 105 eV; it is made up by a 0.012% high voltage ripple and the Doppler broadening of the resonances due to the thermal motion of the target nuclei. A long term stability of the proton energy of < 5 eV/h at 300 keV was achieved with new resistors in the voltage regulating system.Applications of the accelerator for the remeasurement of some resonance energies and widths and for depth profiling of light implanted ions in metals by the resonance broadening method will be briefly discussed.     

Differential cross section measurements of the S(d,p)S reaction for nuclear reaction analysis purposes

Differential cross sections of the ³²S(d,p_{0,1,2,3,4-6,7}) reactions were determined for deuteron energies E_lab = 1975-2600 keV (in steps of 25 keV) and for detector angles between 140-170° in steps of 10°. A comparison of the experimental data with the existing ones and possible applications to nuclear reaction analysis (NRA) studies are discussed.     

A detailed study of the d + B system for nuclear reaction analysis - Part A: The B(d,p)B reaction in the energy region Ed,lab = 900-2000 keV

The differential cross-sections of the ¹⁰B(d,p_{0,1,2,3,4-5,6}) reactions for the determination of the depth distribution of boron in near-surface layers of materials have been determined in the projectile energy region E_d,lab = 900-2000 keV. The experiment was carried out in energy steps of 25 keV and for eight detector angles between 135° and 170° (in steps of 5°). The obtained experimental data are suitable for nuclear reaction analysis (NRA) studies. A qualitative discussion of the observed cross-section variations through the strong influence of overlapping resonances in the d + ¹⁰B system is also presented.     

气溶胶中F和Na分析的外束质子诱发γ射线激发曲线测量

在大气颗粒物离子束分析中,质子诱发γ射线分析（PIGE）作为质子诱发X荧光发射（PIXE）的补充方法,通常用于分析轻元素。为得到外束PIGE定量分析气溶胶样品中F和Na元素的最佳实验条件,本工作在北京师范大学串列加速器上测定了质子能量在1.8～2.9 MeV范围内,核反应¹⁹F(p,p’γ)¹⁹F（E_γ=110 keV和197 keV）和 ²³Na(p,p’γ)²³Na(E_γ=440 keV)的γ射线激发函数。     

Electron impact excitation of the 6s S1/2 state of In atom at small scattering angles

We measured the differential cross sections (DCSs) for the electron-impact excitation of the resonance transition 5p²P_1/2-6s²S_1/2 of In atom at small scattering angles using a crossed electron-atom beam technique. The incident electron energies were E₀ = 10, 20, 40, 60, 80 and 100 eV, while the small scattering angles ranged from 1° to 10° in steps of 1°. The forward scattering function method has been used for normalizing the generalized oscillator strengths (GOS) to the known optical oscillator strength and obtaining the absolute DCS values.     

New local model for electronic energy loss and its application to computer simulations of channeling

We used the average of the Thomas-Fermi (TF) electron distribution instead of that of Hartree-Fock (HF) electron distribution as the screening length of an isolated atom. Based on the Firsov theory, we proposed a new Firsov formula of the electronic energy loss which has a simple form ΔE_e(E, b) ∞ S_e(E) exp(γb)/(1 + βb)⁶, where S_e(E) is the electronic stopping cross section, b = p/a, p and a are the impact parameter and the screening length, respectively, and β and γ are the fitting parameters. Using the present screening lengths with the shell effect and the new Firsov formula, the depth distributions of channeling were simulated by the ACOCT code for 20 keV B⁺ ions impinging along the [1 1 0] channel direction of silicon (1 1 0) surface. The ACOCT depth profiles of channeling using the new Firsov (solid) local model for the AMLJ potential are in good agreement with the experimental ones.     

PIGE analysis and profiling of aluminium

In this work we present an alternative method for PIGE analysis of aluminium in thick samples. This method is based on the ERYA - emitted radiation yield analysis - code, which integrates the nuclear reaction excitation function along the depth of the sample. For this purpose, the excitations functions of the ²⁷Al(p,p′γ_1,2)²⁷Al reaction (with gamma-ray energies of 844 and 1014 keV) were employed. Calculated gamma-ray yields were compared, at several proton energy values, with experimental yields for thick samples made of inorganic compounds containing aluminium. The agreement is better than 5%.The 1684 keV resonance of the same reaction, with a natural width of 100 eV, was used to profile samples of Ti implanted with several doses of Al. We show that this resonance, stronger than the 992 keV resonance of the ²⁷Al(p,γ)²⁸Si usually employed for aluminium profiling, leads to similar depth resolution in shorter collection time.     

Desorption of gold nanoclusters from gold nanodispersed targets by 200 keV Au5 polyatomic ions in the elastic stopping mode: Experiment and molecular-dynamics simulation

Au nanoislet targets (∅ 2-60 nm) were bombarded by 200 keV polyatomic ions (40 keV/atom), which deposit their energy mainly in the nuclear stopping mode: ∑(dE/dx)_n = 30 keV/nm and ∑(dE/dx)_e = 2 keV/nm. The matter desorbed in the form of nanoclusters was registered by TEM. The total transfer of matter was determined by neutron-activation analysis. The total yield of the ejected gold reached high values of up to 2.6 × 10⁴ atoms per Au₅ ion. The major part (2 × 10⁴ atoms per ion Au₅) of the emission is in the form of nanoclusters. The results are compared with the data of similar experiments with 1 MeV Au₅ (200 keV/atom) and other projectiles. The analysis of the experimental data and the comparison to molecular-dynamics simulation results of the desorption process show that the desorption of Au nanoislets is induced by their melting, build-up of pressure and thermal expansion.     

Elastic electron scattering by silver atom

The experimental and theoretical studies of elastic electron scattering by silver atom have been carried out. The experimental investigation was based on crossed beam technique with effusive atomic beam being perpendicularly crossed by electron beam. The measurements were performed at electron-impact energies (E₀) of 10, 20, 40, 60, 80 and 100 eV and for a range of scattering angles (θ) from 10° up to 150°. The absolute differential cross sections (DCSs) have been obtained from the elastic-to-inelastic (the unresolved silver resonant lines 4d¹⁰5p²P_{1/2, 3/2}) intensity ratio at θ = 10° at each E₀. Calculations have been performed using the parameter-free complex optical potential (OP) with the inclusion of spin-orbit interaction for the same E₀. Comparison between present experiment and theory has been made.     

Desorption of gold nanoclusters (2-30 nm) under low excitation of their electronic subsystem by Ar ions (14 keV/nm)

Gold nanodispersed targets with islands-grains sized 2-30 nm were irradiated by Ar⁷⁺ ions with the energy of 45.5 MeV and (dE/dx)_e = 14.2 keV/nm in gold. The desorbed gold nanoclusters were studied by TEM method. For all the targets desorption of intact gold nanoclusters is observed. However, for inelastic stopping of monatomic Ar ions in gold of 14.2 keV/nm desorption of nanoclusters is observed only up to ∼25 nm. The yield of the desorbed nanoclusters considerably decreases from 3 to 0.02 cluster/ion with the increase of the mean size of the desorbed nanoclusters from 3 to 14.2 nm. The results are discussed.     

Scintillation light produced by low-energy beams of highly-charged ions

Measurements have been performed of scintillation light intensities emitted from various inorganic scintillators irradiated with low-energy beams of highly-charged ions from an electron beam ion source (EBIS) and an electron cyclotron resonance ion source (ECRIS). Beams of xenon ions Xe^q+ with various charge states between q = 2 and q = 18 have been used at energies between 5 and 17.5 keV per charge generated by the ECRIS. The intensity of the beam was typically varied between 1 and 100 nA. Beams of highly charged residual gas ions have been produced by the EBIS at 4.5 keV per charge and with low intensities down to 100 pA. The scintillator materials used are flat screens of P46 YAG and P43 phosphor. In all cases, scintillation light emitted from the screen surface was detected by a CCD camera. The scintillation light intensity has been found to depend linearly on the kinetic ion energy per time deposited into the scintillator, while up to q = 18 no significant contribution from the ions’ potential energy was found. We discuss the results on the background of a possible use as beam diagnostics, e.g. for the new HITRAP facility at GSI, Germany.     

Proton elastic scattering differential cross-section measurements of Sc

In the present study the differential cross sections of the ⁴⁵Sc(p,p)⁴⁵Sc reaction were measured. Two independent experiments were performed. At first a sandwiched thin ScBr₃ target was used for beam energies E_LAB = 2300-5500 keV (in steps of 25 and 50 keV) and for detector angles 140°, 160°, and 170°. Secondly a thick Sc₂O₃ sample was formed and irradiated for E_LAB = 3100-5500 keV with a detector placed at 140°, to validate the results of the first measurement.     

Determination of differential cross-sections for the natK(p, p0) and 39K(p, α0) reactions in the backscattering geometry

In the present work, new, differential cross-section values are presented for the ^natK(p, p₀) reaction in the energy range E_lab = 3000–5000 keV (with an energy step of 25 keV) and for detector angles between 140° and 170° (with an angular step of 10°). A qualitative discussion of the observed cross-section variations through the influence of strong, closely spaced resonances in the p + ³⁹K system is also presented. Information has also been extracted concerning the ³⁹K(p,α₀) reaction for E_lab = 4000–5000 keV in the same angular range. As a result, more than ～500 data points will soon be available to the scientific community through IBANDL (Ion Beam Analysis Nuclear Data Library – http://www-nds.iaea.org/ibandl/) and could thus be incorporated in widely used IBA algorithms (e.g. SIMNRA, WINDF, etc.) for potassium depth profiling at relatively high proton beam energies.     

First temperature stage evolution of irradiation-induced defects in tungsten studied by positron annihilation spectroscopy

The behaviour of vacancy like implantation-induced defects created in the track region of 800 keV ³He ions in polycrystalline tungsten was studied by Doppler broadening spectroscopy as a function of annealing temperature. A slow positron beam, coupled with a Doppler broadening spectrometer, was used to measure the low- and high-momentum annihilation fractions, S and W, respectively, as a function of positron energy in tungsten samples implanted at different fluences from 10¹⁴ to 5 × 10¹⁶ cm⁻². The behaviour of the S(E), W(E) and S(W) plots with the annealing temperature clearly indicates that the irradiation-induced vacancy like defects begin to evolve between 523 and 573 K, whatever the implantation fluence. This first temperature stage evolution corresponds to the migration of the monovacancies created during implantation to form larger vacancy like defects of which depth profile is different from the initial radiation-induced defects one.     

Experimental study of the Ho(p,n) nuclear reaction for production of the therapeutic radioisotope Er

The 10.3 h half life radionuclide ¹⁶⁵Er, decaying by electron capture to stable ¹⁶⁵Ho, is an excellent candidate for Auger-electron therapy. In the frame of a systematic study of charged particle production routes of ¹⁶⁵Er, the excitation function of the ¹⁶⁵Ho(p,n)¹⁶⁵Er reaction was measured up to 35 MeV by using a stacked foil irradiation technique and X-ray spectroscopy. The measured excitation function shows a significant energy shift when compared to the only experimental dataset measured earlier and an acceptable agreement with the results of different nuclear reaction model codes. The thick target yields calculated from the excitation function at typical energies available at small cyclotrons (E_p = 11 MeV and E_p = 15 MeV) are 41 MBq/μAh = 11 GBq/C and 75 MBq/μAh = 21 GBq/C, respectively.     

Proton beam induced luminescence of silicon dioxide implanted with silicon

Light emission from a silicon dioxide layer enriched with silicon has been studied. Samples used had structures made on thermally oxidized silicon substrate wafers. Excess silicon atoms were introduced into a 250-nm-thick silicon dioxide layer via implantation of 60 keV Si⁺ ions up to a fluence of 2 × 10¹⁷ cm⁻². A 15-nm-thick Au layer was used as a top semitransparent electrode. Continuous blue light emission was observed under DC polarization of the structure at 8-12 MV/cm. The blue light emission from the structures was also observed in an ionoluminescence experiment, in which the light emission was caused by irradiation with a H₂⁺ ion beam of energy between 22 and 100 keV. In the case of H₂⁺, on entering the material the ions dissociated into two protons, each carrying on average half of the incident ion energy. The spectra of the emitted light and the dependence of ionoluminescence on proton energy were analyzed and the results were correlated with the concentration profile of implanted silicon atoms.