Rydberg and autoionizing triplet states in Helium up to the N = 5 threshold

Energy levels of highly excited bound Rydberg states, the position and widths of autoionizing states, and oscillator strengths are calculated for He ³S, ³P^e, ³P^o, ³D^e and ³D^o symmetries up to the N = 5 He⁺ excitation threshold. The calculations are performed with the K-matrix B-spline method with maximum orbital angular momentum ?_max = 8. Reliable doubly excited-state parameters up to the n = 20 multiplet below each ionization threshold are presented. One thousand and six hundred newly identified bound and metastable states, seven times those available in literature, fill many gaps, reveal a dozen intruder states, and allow new speculations on propensity rules and radiative decays of triplet Rydberg states.     

Atomic data for dielectronic satellite lines and dielectronic recombination into Ne

Energy levels, radiative transition probabilities, and autoionization rates for B-like neon (Ne⁵⁺) including 1s²2s²nl, 1s²2s2pnl, and 1s²2p²nl (n = 2-11 and l = 0-7) states were calculated using a multiconfigurational Hartree-Fock method (Cowan code) and a relativistic many-body perturbation theory method (RMPT) code. Autoionizing levels above three thresholds (1s²2s²¹S, 1s²2s2p ³P, 1s²2s2p ¹P) were considered. We find that configuration mixing (2s²nl + 2p²nl) plays an important role for all atomic characteristics. Branching ratios relative to the first threshold and the intensity factor were calculated for satellite lines and dielectronic recombination rate coefficients for the 190 odd-parity and 198 even-parity excited states. The dielectronic recombination rate coefficients including 1s²2s²nl, 1s²2s2pnl, and 1s²2p²nl (n = 2-11 and l = 0-7) states were calculated. The contributions from the excited states higher than n = 11 were estimated by extrapolation of all atomic characteristics to derive the total dielectronic recombination rate coefficient. It is found that the distribution of the rate coefficients as a function of the orbital angular momentum quantum number shows a peak at l = 5. The total dielectronic recombination rate coefficient was derived as a function of electron temperature. The dielectronic satellite lines were also obtained. The state selective dielectronic recombination rate coefficients to excited states of B-like neon were obtained, which are useful for modeling Ne VI spectral lines in a recombining plasma.     

Effect of adsorbates on the formation of doubly excited He atoms during impact of He ions on a Ni(1 1 0) surface

The formation of doubly excited states of He atoms during impact of He²⁺ ions with projectile energies of 60-1000 eV under near-grazing angles of incidence of 5°-20° on clean and adsorbate-covered Ni(1 1 0) surfaces is studied by means of Auger electron spectroscopy. Pronounced dependencies of electron spectra from autoionization of atoms in doubly excited 2s², 2s2p and 2p² configurations on the coverage of the target surface with adsorbates are observed. These are directly related to work function changes, which are studied for the controlled adsorption of oxygen. Changes of the electron spectra on the target temperature are found for adsorbate-covered surfaces only, which puts into question recent interpretations of similar electron spectra in terms of a high local electron spin polarization of Ni(1 1 0) by an alternative interpretation based on thermal desorption or dissolution into bulk of surface contaminations. The formation of doubly excited states is studied for the oxygen p(2 × l) and p(3 × l) superstructures on Ni(1 1 0) in order to provide well-defined experimental data for theoretical investigations.     

Experimental cross sections for two-electron capture into nitrogen autoionising states in Nq+ (q = 6, 7) on He and H2 collisions at 10.5q keV

Singly differential cross sections for two-electron capture into autoionising states (nl, n'l') with n = 2, 3, 4 and n′≥ in N^q+ (q = 6, 7) on He and H₂ collisions have been measured at 10.5q keV collision energy and an observation angle θ_lab =11.6°Total cross sections are estimated assuming isotropic angular distributions.     

Pure ionization cross section of helium and ionization mechanism

Pure target ionization was investigated for 0.4-6.4 MeV C^q+(q = 1-4) + He and O^q+(q = 1-4) + He collisions. The double-to-single target ionization ratios R₂₁ were measured using coincidence techniques. We compare our results with existing experimental results and find they are in good agreement. The ratio R₂₁ is nearly independent of projectile charge state. The relation of R₂₁ ∼ V is analyzed using the over barrier model (OBM) and ionization probability, which is described in our extended over barrier model. Our calculation agrees well with the experimental results.     

Interferences in electron emission from O2 by 30 MeV O impact

Interference structures in the ejected electron spectra for 30 MeV O^5,8+ + O₂ are investigated. The measured electron yields were studied for electron energies from 5 to 400 eV and observation angles of 30°, 60°, 90°, 120° and 150° with respect to the incident beam direction. Experimental molecular cross-sections were normalized to theoretical molecular one-center cross-sections revealing oscillatory structures suggestive of secondary interferences as evidenced by the independence on the observation angle. An oscillation interval for 30 MeV O^5,8+ + O₂ of Δk ∼ 4 a.u. is found, a value two times larger than that previously observed for 3 MeV H⁺ + N₂. No obvious evidence for primary Young-type interferences was seen.     

Molybdenum L-shell X-ray production by 350-600 keV Xe (q = 25-30) ions

Molybdenum L-shell X-rays were produced by Xe^q+ (q = 25-30) bombardment at low energies from 2.65 to 4.55 keV/amu (350-600 keV). We observed a kinetic energy threshold of Mo L-shell ionization down to 2.65-3.03 keV/amu (350-400 keV). The charge state effect of the incident ions was not observed which shows that the ions were neutralized, reaching an equilibrium charge state and losing their initial charge state memory before production of L-shell vacancies resulted in X-ray production. The experimental ionization cross sections were compared with those from Binary Encounter Approximation theory. Taking into account projectile deflection in the target nuclear Coulomb field, the ionization cross section of Mo L-shell near the kinetic energy threshold was well described.     

Separation of potential and kinetic electron emission from Si and W induced by multiply charged neon and argon ions

The total secondary electron emission yields, γ_T, induced by impact of the fast ions Ne^q+ (q = 2-8) and Ar^q+ (q = 3-12) on Si and Ne^q+ (q = 2-8) on W targets have been measured. It was observed that for a given impact energy, γ_T increases with the charge of projectile ion. By plotting γ_T as a function of the total potential energy of the respective ion, true kinetic and potential electron yields have been obtained. Potential electron yield was proportional to the total potential energy of the projectile ion. However, decrease in potential electron yield with increasing kinetic energy of Ne^q+ impact on Si and W was observed. This decrease in potential electron yield with kinetic energy of the ion was more pronounced for the projectile ions having higher charge states. Moreover, kinetic electron yield to energy-loss ratio for various ion-target combinations was calculated and results were in good agreement with semi-empirical model for kinetic electron emission.     

Alkali ion scattering from Ag(0 0 1) and Ag thin films at low and hyperthermal energies

We have investigated the scattering of K⁺ and Cs⁺ ions from a single crystal Ag(0 0 1) surface and from a Ag-Si(1 0 0) Schottky diode structure. For the K⁺ ions, incident energies of 25 eV to 1 keV were used to obtain energy-resolved spectra of scattered ions at θ_i = θ_f = 45°. These results are compared to the classical trajectory simulation safari and show features indicative of light atom-surface scattering where sequential binary collisions can describe the observed energy loss spectra. Energy-resolved spectra obtained for Cs⁺ ions at incident energies of 75 eV and 200 eV also show features consistent with binary collisions. However, for this heavy atom-surface scattering system, the dominant trajectory type involves at least two surface atoms, as large angular deflections are not classically allowed for any single scattering event. In addition, a significant deviation from the classical double-collision prediction is observed for incident energies around 100 eV, and molecular dynamics studies are proposed to investigate the role of collective lattice effects. Data are also presented for the scattering of K⁺ ions from a Schottky diode structure, which is a prototype device for the development of active targets to probe energy loss at a surface.     

Scintillation light produced by low-energy beams of highly-charged ions

Measurements have been performed of scintillation light intensities emitted from various inorganic scintillators irradiated with low-energy beams of highly-charged ions from an electron beam ion source (EBIS) and an electron cyclotron resonance ion source (ECRIS). Beams of xenon ions Xe^q+ with various charge states between q = 2 and q = 18 have been used at energies between 5 and 17.5 keV per charge generated by the ECRIS. The intensity of the beam was typically varied between 1 and 100 nA. Beams of highly charged residual gas ions have been produced by the EBIS at 4.5 keV per charge and with low intensities down to 100 pA. The scintillator materials used are flat screens of P46 YAG and P43 phosphor. In all cases, scintillation light emitted from the screen surface was detected by a CCD camera. The scintillation light intensity has been found to depend linearly on the kinetic ion energy per time deposited into the scintillator, while up to q = 18 no significant contribution from the ions’ potential energy was found. We discuss the results on the background of a possible use as beam diagnostics, e.g. for the new HITRAP facility at GSI, Germany.     

Wavelengths and transition probabilities in heavy Ge-like ions (70 ? Z ? 92)

Wavelengths and transition probabilities have been calculated for the 4s²4p²-4s4p³ and 4s²4p²-4s²4p4d allowed transitions and for the forbidden (M1 and E2) transitions occurring within the ground configuration (4s²4p²) in the heavy Ge-like ions with Z = 70-92. The fully relativistic multiconfiguration Dirac-Fock method taking into account both the correlations within the n = 4 complex and the QED effects has been used for the calculations. The present results are compared to and agree well with recent electron-beam ion-trap measurements in tungsten, osmium, gold, bismuth, thorium, and uranium.     

Relativistic energy, fine structure, and hyperfine-structure studies of the high-lying core-excited states P(n) (n = 1-3) and S(m) (m = 1-3) for the Be-like isoelectronic sequence

The variational method using a multiconfiguration interaction wavefunction is carried out on the high-lying core-excited states ⁵P(n) (n = 1-3) and ⁵S^o(m) (m = 1-3) for the Be-like isoelectronic sequence from Z = 7 to 10, including mass polarization and relativistic corrections. Relativistic energies, oscillator strengths, wavelengths, and lifetimes are reported. The results are compared with other theoretical and experimental data in the literature. The fine structure and hyperfine structure of core-excited states for this system are also investigated.     

Table of three-quasiparticle rotational bands in deformed nuclei, 153 ? A ? 187

The experimentally observed level structures based on three-quasiparticle (3qp) states are classified according to their intrinsic structures, and other properties are deduced from measurements such as B(M1)/B(E2) ratios, |g_K − g_R| values, lifetimes, etc. The present table lists data for a total of 168 such structures which have been extracted from the literature for 55 nuclides in the mass region A = 153-187 (Z = 63-78, N = 88-112), with the majority of these bands in the A = 180 region (28 bands in seven Re isotopes alone). Nuclear models used for the interpretation of 3qp structures, generalization of the Gallagher-Moszkowski (GM) rules to 3qp states, and high-spin features such as t-bands, high-K isomers, signature splitting, signature inversion, alignment, etc., are discussed briefly. The literature cutoff date for extraction of data for known 3qp structures is July 15, 2005.     

Electron impact collision strengths and oscillator strengths for Ge-, Ga-, Zn-, Cu-, Ni-, and Co-like Au ions

Energy levels, oscillator strengths, and electron impact collision strengths have been calculated for Ge-, Ga-, Zn-, Cu-, Ni-, and Co-like Au ions. For Ni-like Au, these atomic data are obtained among the levels belonging to the configurations of ([Ne])3s²3p⁶3d¹⁰, 3s²3p⁶3d⁹nl, 3s²3p⁵3d¹⁰nl, and 3s 3p⁶3d¹⁰nl (n = 4, 5; l = 0, 1, … , n − 1). For other Au ions, more levels have been obtained with special attention to atomic data up to transitions of 5f → 3d for emission or 3d → 5f for absorption. Configuration interactions are taken into account for all levels included. Collision strengths have been obtained at 20 scattered electron energies (5-40,000 eV) and they are listed at six representative energies of 100, 500, 1000, 5000, 10,000, and 20,000 eV in this work. Effective collision strengths have been obtained by assuming a Maxwellian electron velocity distribution at 10 representative temperatures ranging from 500 to 5000 eV. The present dataset should be adequate for most applications. The energy levels are expected to be accurate to within 0.5%, while oscillator strengths and collision strengths for strong transitions are probably accurate to better than 20%. The complete dataset is available electronically from http://www.astronomy.csdb.cn/EIE/.     

The (He, tf) as a surrogate reaction to determine (n, f) cross sections in the 10-20 MeV energy range

The surrogate reaction ²³⁸U(³He, tf) is used to determine the ²³⁷Np(n, f) cross section indirectly over an equivalent neutron energy range from 10 to 20 MeV. A self-supporting ∼761 μg/cm² metallic ²³⁸U foil was bombarded with a 42 MeV ³He²⁺ beam from the 88-Inch Cyclotron at Lawrence Berkeley National Laboratory (LBNL). Outgoing charged particles and fission fragments were identified using the Silicon Telescope Array for Reaction Studies (STARS) consisted of two 140 μm and one 1000 μm Micron S2 type silicon detectors. The ²³⁷Np(n, f) cross sections, determined indirectly, were compared with the ²³⁷Np(n, f) cross section data from direct measurements, the Evaluated Nuclear Data File (ENDF/B-VII.0), and the Japanese Evaluated Nuclear Data Library (JENDL 3.3) and found to closely follow those datasets. Use of the (³He, tf) reaction as a surrogate to extract (n, f) cross sections in the 10-20 MeV equivalent neutron energy range is found to be suitable.     

Thermal ionization of Cs Rydberg states

Rates P_nl of photoionization from Rydberg ns-, np-, nd-states of a valence electron in Cs, induced by black-body radiation, were calculated on the basis of the modified Fues model potential method. The numerical data were approximated with a three-term expression which reproduces in a simple analytical form the dependence of P_nl on the ambient temperature T and on the principal quantum number n. The comparison between approximate and exactly calculated values of the thermal ionization rate demonstrates the applicability of the proposed approximation for highly excited states with n from 20 to 100 in a wide temperature range of T from 100 to 10,000 K. We present coefficients of this approximation for the s-, p- and d-series of Rydberg states.     

Surface exfoliation and defect structures in Si induced by 160 keV He and 110 keV H ion implantation

Cz n-type Si(100) wafers were implanted at room temperature with 160 keV He ions at a fluence of 5 × 10¹⁶/cm² and 110 keV H ions at a fluence of 1 × 10¹⁶/cm², singly or in combination. Surface phenomena and defect microstructures have been studied by various techniques, including scanning electron microscopy (SEM), atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM). Surface exfoliation and flaking phenomena were only observed on silicon by successive implantation of He and H ions after subsequent annealing at temperatures above 400 °C. The surface phenomena show strong dependence on the thermal budget. At annealing temperatures ranging from 500 to 700 °C, craters with size of about 10 μm were produced throughout the silicon surface. As increasing temperature to 800 °C, most of the implanted layer was sheared, leaving structures like islands on the surface. AFM observations have demonstrated that the implanted layer is mainly transfered at the depth around 960 nm, which is quite consistent with the range of the ions. XTEM observations have revealed that the additional low fluence H ion implantation could significantly influence thermal growth of He-cavities, which gives rise to a monolayer of cavities surrounded by a large amount of dislocations and strain. The surface exfoliation effects have been tentatively interpreted in combination of AFM and XTEM results.     

The use of HI-ERDA/RBS and NRA/RBS to depth profile N in GaAs1−xNx thin films

N profiles of several GaAs_1−xN_x epitaxial layers with different N mole fractions in the range 0 < x < 0.14 were obtained by using (1) heavy-ion elastic recoil detection analysis (HI-ERDA) along with Rutherford backscattering spectrometry (RBS) using a 35 MeV Si⁶⁺ beam, and (2) nuclear reaction analysis (NRA) with the ¹⁴N(α, p)¹⁷O reaction, also with RBS, using a 3.7 MeV ⁴He⁺ beam. The results from the two techniques are compared and the advantages, disadvantages and capabilities are discussed.     

K-shell absorption jump factors and jump ratios in elements between Tm (Z = 69) and Os (Z = 76) derived from new mass attenuation coefficient measurements

The K-shell absorption jump factors and jump ratios were derived from new mass attenuation coefficients measured using an energy dispersive X-ray fluorescence (EDXRF) spectrometer for Tm, Yb elements being Tm₂O₃, Yb₂O₃ compounds and pure Lu, Hf, Ta, W, Re and Os. The measurements, in the region 56-77 keV, were done in a transmission geometry utilizing the K_α1, K_α2, K_β1 and K_β2 X- rays from different secondary source targets (Yb, Ta, Os, W, Re and Ir, etc.) excited by the 123.6 keV γ-photons from an ⁵⁷Co annular source and detected by an Ultra-LEGe solid state detector with a resolution of 150 eV at 5.9 keV. Experimental results have been compared with theoretically calculated values. The measured values of Tm, Yb, Lu, Hf, Ta, W, Re and Os are reported here for the first time.