Positron annihilation and X-ray diffraction studies on tin oxide thin films

Positron annihilation spectroscopy along with glancing incidence X-ray diffraction have been used to investigate tin oxide thin films grown on Si by pulsed laser deposition. The films were prepared at room temperature and at 670 K under oxygen partial pressure. As-grown samples are amorphous and are found to contain large concentration of open volume sites (vacancy defects). Post-deposition annealing of as-grown samples at 970 K is found to drastically reduce the number of open volume sites and the film becomes crystalline. However, film grown under elevated temperature and under partial pressure of oxygen is found to exhibit a lower S-parameter, indicating lower defect concentration. Based on the analysis of experimental positron annihilation results, the defect-sensitive S-parameter and the overlayer thickness of tin oxide thin films are deduced. S-W correlation plots exhibit distinct positron trapping defect states in three samples.     

Microdefects and 3d electrons in ordered B2-FeAl alloys investigated by positron annihilation techniques

Microdefects and 3d electrons in B2-FeAl alloys with different chemical composition, single crystal of Fe and cold-rolled Fe has been studied by positron lifetime and coincidence Doppler broadening spectroscopy. The coincidence Doppler broadening spectrum of the single crystal of Fe shows the highest 3d electron signal in the spectra of all tested samples. The 3d electron signal in the spectrum of Fe₅₀Al₅₀ alloy is much lower than that of the cold-rolled Fe. This indicates that some of the 3d electrons of Fe atoms and 3p electrons of Al atoms in B2-FeAl alloy are localized to form strong covalent bonds, thus decreasing the probability of positron annihilation with 3d electrons of Fe atoms. With the increase of Al content in B2-FeAl alloys, the 3d electron signal in the spectrum of the alloy decreases, while the open volume of defect increases.     

Microstructure evolution of Ge implanted silicon oxide thin films upon annealing treatments

The structural evolution of silicon oxide films with Ge⁺ implantation was traced with a positron beam equipped with positron annihilation Doppler broadening and lifetime spectrometers. Results indicate that the film structure change as a function of the annealing temperature could be divided into four stages: (I) T < 300 °C; (II) 300 °C ? T ? 500 °C; (III) 600 °C ? T ? 800 °C; (IV) T ? 900 °C. In comparison with stage I, the increased positron annihilation Doppler broadening S values during stage II is ascribed to the annealing out of point defects and coalescence of intrinsic open volumes in silicon oxides. The obtained long positron lifetime and high S values without much fluctuation in stage III suggest a rather stable film structure. Further annealing above 900 °C brings about dramatic change of the film structure with Ge precipitation. Positron annihilation spectroscopy is thereby a sensitive probe for the diagnosis of microstructure variation of silicon oxide thin films with nano-precipitation.     

Radiation damage in a-SiO2 exposed to intense positron pulses

In addition to its numerous technological applications amorphous silica (a-SiO₂) is also well suited to the creation and study of exotic atoms such as positronium (Ps) and muonium. In particular, a dense Ps gas may be created by implanting an intense positron pulse into a porous a-SiO₂ sample. However, such positron pulses can constitute a significant dose of radiation, which may damage the sample. We have observed a reduction in the amount of Ps formed in a thin film of porous a-SiO₂ following irradiation by intense positron pulses, indicating the creation of paramagnetic centers. The data show that the primary effect of the irradiation is the inhibition of Ps formation, with no significant change in the subsequent Ps lifetime, from which we deduce that damage centers are created primarily in the bulk material and not on the internal surfaces of the pores, where they would be accessible to the long-lived Ps. We find that the damage is reversible, and that the system may be returned to its original state by heating to 700 K. The implications of these results for experiments with dense Ps in porous materials are discussed.     

Positron annihilation study of neutron irradiated model alloys and of a reactor pressure vessel steel

The hardening and embrittlement of reactor pressure vessel steels are of great concern in the actual nuclear power plant life assessment. This embrittlement is caused by irradiation-induced damage, and positron annihilation spectroscopy has been shown to be a suitable method for analysing most of these defects. In this paper, this technique (both positron annihilation lifetime spectroscopy and coincidence Doppler broadening) has been used to investigate neutron irradiated model alloys, with increasing chemical complexity and a reactor pressure vessel steel. It is found that the clustering of copper takes place at the very early stages of irradiation using coincidence Doppler broadening, when this element is present in the alloy. On the other hand, considerations based on positron annihilation spectroscopy analyses suggest that the main objects causing hardening are most probably self-interstitial clusters decorated with manganese in Cu-free alloys. In low-Cu reactor pressure vessel steels and in (Fe, Mn, Ni, Cu) alloys, the main effect is still due to Cu-rich precipitates at low doses, but the role of manganese-related features becomes pre-dominant at high doses.     

Theory of He trapping, diffusion, and clustering in UO2

We have performed ab initio total energy calculations to investigate the behavior of helium and its diffusion properties in uranium dioxide (UO₂). Our investigations are based on the density functional theory within the generalized gradient approximation (GGA). The trapping behavior of He in UO₂ has been modeled with a supercell containing 96-atoms as well as uranium and oxygen vacancy trapping sites. The calculated incorporation energies show that for He a uranium vacancy is more stable than an oxygen vacancy or an octahedral interstitial site (OIS). Interstitial site hopping is found to be the rate-determining mechanism of the He diffusion process and the corresponding migration energy is computed as 2.79 eV at 0 K (with the spin-orbit coupling (SOC) included), and as 2.09 eV by using the thermally expanded lattice parameter of UO₂ at 1200 K, which is relatively close to the experimental value of 2.0 eV. The lattice expansion coefficient of He-induced swelling of UO₂ is calculated as 9 × 10⁻². For two He atoms, we have found that they form a dumbbell configuration if they are close enough to each other, and that the lattice expansion induced by a dumbbell is larger than by two distant interstitial He atoms. The clustering tendency of He has been studied for small clusters of up to six He atoms. We find that He strongly tends to cluster in the vicinity of an OIS, and that the collective action of the He atoms is sufficient to spontaneously create additional point defects around the He cluster in the UO₂ lattice.     

Characterization of defect accumulation in neutron-irradiated Mo by positron annihilation spectroscopy

Positron annihilation lifetime spectroscopy measurements were performed on neutron-irradiated low carbon arc cast Mo. Irradiation took place in the high flux isotope reactor, Oak Ridge National Laboratory, at a temperature of 80 ± 10 °C. Neutron fluences ranged from 2 × 10²¹ to 8 × 10²⁴ n/m² (E > 0.1 MeV), corresponding to displacement damage levels in the range from 7.2 × 10⁻⁵ to 2.8 × 10⁻¹ displacements per atom (dpa). A high density of submicroscopic cavities was observed in the neutron-irradiated Mo and their size distributions were estimated. Cavities were detected even at a very low-dose of ∼10⁻⁴ dpa. The average size of the cavities did not change significantly with dose, in contrast to neutron-irradiated bcc Fe where cavity sizes increased with increasing dose. It is suggested that the in-cascade vacancy clustering may be significant in neutron-irradiated Mo, as predicted by molecular dynamics simulations.     

Characterization of ThO2-UO2 pellets made by co-precipitation process

The co-precipitation technique renders an excellent route to obtain a homogeneous mixture of ThO₂ and UO₂ powders. In this process, after the nitrate solutions of Th and U are mixed in the intended ratio, oxalic acid is added for co-precipitation. The precipitate is then dried and calcined to get a solid solution of ThO₂ and UO₂. In this study, ThO₂-30%UO₂ and ThO₂-50%UO₂ (% in weight) powders were characterized in terms of particle size, particle shape, surface area, phase content, O/M ratio etc. The pellets obtained by sintering these powders were characterized with the help of optical microscopy, scanning electron microscopy (SEM) and electron probe microanalysis (EPMA). The XRD data for ThO₂-30%UO₂ and ThO₂-50%UO₂ pellets showed the presence of a small amount of U₃O₈ phase besides fluorite phase. The grain size of ThO₂-30%UO₂ and ThO₂-50%UO₂ was found to be 5.7 and 4.5 μm, respectively.     

First temperature stage evolution of irradiation-induced defects in tungsten studied by positron annihilation spectroscopy

The behaviour of vacancy like implantation-induced defects created in the track region of 800 keV ³He ions in polycrystalline tungsten was studied by Doppler broadening spectroscopy as a function of annealing temperature. A slow positron beam, coupled with a Doppler broadening spectrometer, was used to measure the low- and high-momentum annihilation fractions, S and W, respectively, as a function of positron energy in tungsten samples implanted at different fluences from 10¹⁴ to 5 × 10¹⁶ cm⁻². The behaviour of the S(E), W(E) and S(W) plots with the annealing temperature clearly indicates that the irradiation-induced vacancy like defects begin to evolve between 523 and 573 K, whatever the implantation fluence. This first temperature stage evolution corresponds to the migration of the monovacancies created during implantation to form larger vacancy like defects of which depth profile is different from the initial radiation-induced defects one.     

Study of the behavior of 3d-shell electrons in binary Nd-Fe alloys

The behavior of 3d electrons in binary Nd-Fe alloys with different Nd content from 7 to 13 at.% has been studied by using positron coincidence Doppler broadening techniques. It has been found that the 3d electron signal in Nd₂Fe₁₇ alloy is relatively high as compared with other alloys. In Fe-rich Nd₂Fe₁₇ alloys, as the content of Fe increasing, the phase boundaries between α-Fe and Nd₂Fe₁₇ phases will increase, which gives rise to the decrease in the probability of positron annihilation with 3d electrons. In Nd-rich Nd₂Fe₁₇ alloys, with the decrease of Fe content, the d-d interactions are weakened, and the probability of positron annihilation with 3d electrons will decrease. The coercivity JH_c and remanence Jr of the Nd-Fe alloy increase with the d-d interaction.     

The effect of alloying elements on the vacancy defect evolution in electron-irradiated austenitic Fe-Ni alloys studied by positron annihilation

The vacancy defect evolution under electron irradiation in austenitic Fe-34.2 wt% Ni alloys containing oversized (aluminum) and undersized (silicon) alloying elements was investigated by positron annihilation spectroscopy at temperatures between 300 and 573 K. It is found that the accumulation of vacancy defects is considerably suppressed in the silicon-doped alloy. This effect is observed at all the irradiation temperatures. The obtained results provide evidence that the silicon-doped alloy forms stable low-mobility clusters involving several Si and interstitial atoms, which are centers of the enhanced recombination of migrating vacancies. The clusters of Si-interstitial atoms also modify the annealing of vacancy defects in the Fe-Ni-Si alloy. The interaction between small vacancy agglomerates and solute Al atoms is observed in the Fe-Ni-Al alloy under irradiation at 300-423 K.     

Study of the electronic structures of oxygen doped in LiBaF3 crystal

The most likely substituting positions of impurity oxygen ions in LiBaF₃ crystals are studied using the general utility lattice program (GULP). The calculated results indicate that the main defect model is [] in the O:LiBaF₃ crystal. The electronic structures of the LiBaF₃ crystal with the defect [] are calculated using the DV-Xα method. It can be concluded from the electronic structures that the LiBaF₃ crystal with the defect [] will exhibit a 217-280 nm absorption band and the impurity oxygen will decrease core-valence luminescence yield.     

The influence of f-type function in positron-He/positron-H2 scattering with the Schwinger multichannel method

In this paper we present results for positron-Helium and positron-H₂ scattering with the inclusion of the f-type Cartesian Gaussian functions in our computer codes of the Schwinger multichannel method (SMC). The effects of this modification can be noticed in the integral cross-section for both studied targets, with our new curves being closer to the most recent experimental measurements. The inclusion of the f-type function in the scattering wave function expansion also helped us to obtain a better set of results with the SMC method for the annihilation parameter. Data for differential cross-section (DCS) for helium is presented as well as our improvement in the DCS data in the forward scattering angles for the hydrogen molecule.     

Combined grazing incidence RBS and TEM analysis of luminescent nano-SiGe/SiO2 multilayers

Multilayer structures with five periods of amorphous SiGe nanoparticles/SiO₂ layers with different thickness were deposited by Low Pressure Chemical Vapor Deposition and annealed to crystallize the SiGe nanoparticles. The use of grazing incidence RBS was necessary to obtain sufficient depth resolution to separate the signals arising from the individual layers only a few nm thick. The average size and areal density of the embedded SiGe nanoparticles as well as the oxide interlayer thickness were determined from the RBS spectra. Details of eventual composition changes and diffusion processes caused by the annealing processes were also studied. Transmission Electron Microscopy was used to obtain complementary information on the structural parameters of the samples in order to check the information yielded by RBS. The study revealed that annealing at 900 °C for 60 s, enough to crystallize the SiGe nanoparticles, leaves the structure unaltered if the interlayer thickness is around 15 nm or higher.     

Spectrum and polarization of coherent and incoherent radiation and the LPM effect in oriented single crystal

The spectrum and the circular polarization of radiation from longitudinally polarized high-energy electrons in an oriented single crystal are considered using the method which permits inseparable consideration of both the coherent and the incoherent mechanisms of photon emission. The spectral and polarization properties of radiation are obtained and analyzed. It is found that in some part of the spectral distribution the influence of multiple scattering (the Landau-Pomeranchuk-Migdal (LPM) effect) attains the order of 7%. The same is true for the influence of multiple scattering on the polarization part of the radiation intensity. The degree of the circular polarization of the total intensity of radiation is found. It is shown that the influence of multiple scattering on the photon polarization is similar to the influence of the LPM effect on the total intensity of radiation: it appears only for relatively low energies of radiating electron and has the order of 1%, while at higher energies the crystal field action excludes the LPM effect.     

Synthesis of nanodimensional TiO2 thin films using energetic ion beam

Nanophases of TiO₂ are achieved by irradiating polycrystalline thin films of TiO₂ by 100 MeV Au ion beam at varying fluence. The surface morphology of pristine and irradiated films is studied by atomic force microscopy (AFM). Phase of the film before and after irradiation is identified by glancing angle X-ray diffraction (GAXRD). The blue shift observed in UV-vis absorption edge of the irradiated films indicates nanostructure formation. Electron spin resonance (ESR) studies are carried out to identify defects created by the irradiation. The nanocrystallisation induced by SHI irradiation in polycrystalline thin films is studied.     

Irradiation effect on dielectric properties and electrical conductivity of Au/SiO2/n-Si (MOS) structures

The Au/SiO₂/n-Si (MOS) structures were exposed to beta-ray irradiation to a total dose of 30 kGy at room temperature. Irradiation effect on dielectric properties of MOS structures were investigated using capacitance−voltage (C−V) and conductance−voltage (G/ω−V) characteristics. The C−V and G/ω−V measurements carried out in the frequency range from 1 kHz to 10 MHz and at various radiation doses, while the dc voltage was swept from positive bias to negative bias for MOS structures. The dielectric constant (ε′), dielectric loss (ε″), loss factor (tan δ) and ac electrical conductivity (σ_ac) were calculated from the C−V and G/ω−V measurements and plotted as a function of frequency at various radiation doses. A decrease in the ε′ and ε″ were observed when the irradiation dose increased. The decrease in the ε′ and ε″ of irradiated MOS structures in magnitude is explained on the basis of Maxwell−Wagner interfacial polarization. Also, the σ_ac is found to decrease with increasing radiation dose. In addition, the values of the tan δ decrease with increasing radiation dose and give a peak. From the experimental results, it is confirmed that the peak of loss tangent is due to the interaction between majority carriers and interface states which induced by radiation.     

Temperature accelerated dynamics study of migration process of oxygen defects in UO2

We studied the migration dynamics of oxygen point defects in UO₂ which is the primary ceramic fuel for light-water reactors. Temperature accelerated dynamics simulations are performed for several initial conditions. Though the migration of the single interstitial is much slower than that of the vacancy, clustered interstitial shows faster migration than those. This observation gives us important insight on the formation mechanism of high-burnup restructuring, including planar defects and grain sub-division (the rim structure), found in UO₂.     

Structural studies of Ge nanocrystals embedded in SiO2 matrix

Germanium nanoparticles embedded in SiO₂ matrix were prepared by atom beam sputtering on a p-type Si substrate. The as-deposited films were annealed at temperatures of 973 and 1073 K under Ar + H₂ atmosphere. The as-deposited and annealed films were characterized by Raman, X-ray diffraction and Fourier transform infrared spectroscopy (FTIR). Rutherford backscattering spectrometry was used to quantify the concentration of Ge in the SiO₂ matrix of the composite thin films. The formation of Ge nanoparticles were observed from the enhanced intensity of the Ge mode in the Raman spectra as a function of annealing, the appearance of Ge(3 1 1) peaks in the X-ray diffraction data and the Ge vibrational mode in the FTIR spectra. We have irradiated the films using 100 MeV Au⁸⁺ ions with a fluence of 1 × 10¹³ ions/cm² and subsequently studied them by Raman and FTIR. The results are compared with the ones obtained by annealing.     

Effect of swift heavy ion irradiation on structure, optical, and gas sensing properties of SnO2 thin films

Swift heavy ion irradiation has been successfully used to modify the structural, optical, and gas sensing properties of SnO₂ thin films. The SnO₂ thin films prepared by sol-gel process were irradiated with 75 MeV Ni⁺ beam at fluences ranging from 1 × 10¹¹ ion/cm² to 3 × 10¹³ ion/cm². Structural characterization with glancing angle X-ray diffraction shows an enhancement of crystallinity and systematic change of stress in the SnO₂ lattice up to a threshold value of 1 × 10¹³ ions/cm², but decrease in crystallinity at highest fluence of 3 × 10¹³ ions/cm². Microstructure investigation of the irradiated films by transmission electron microscopy supports the XRD observations. Optical properties studied by absorption and PL spectroscopies reveal a red shift of the band gap from 3.75 eV to 3.1 eV, and a broad yellow luminescence, respectively, with increase in ion fluence. Gas response of the irradiated SnO₂ films shows increase of resistance on exposure to ammonia (NH₃), indicating p-type conductivity resulting from ion irradiation.