高分子湿敏材料

综述了高分子湿敏材料的现状及其发展，着重分析了3种类型的高分子湿敏材料(带有强极性基团、弱极性基团以及加入导电粉末的高分子材料)的感湿机理，提出了根据不同的感湿机理将材料应用于不同类型的湿度传感器，并根据高分子材料的感湿机理，对湿度传感器用高分子材料的发展进行了预测。     

湿度传感器用湿敏材料

本文综述湿度传感器中使用的各种湿敏材料。按有机湿敏材料和无机湿敏材料两类叙述。重点介绍研究最多的高分子电解质材料和陶瓷材料.     

MeCr_2O_4-Bi_2O_3系半导体陶瓷湿敏材料的微观结构和敏感特性

本文研究了 MeCr_2O_4-Bi_2O_3(Me:Mg,Zn)系半导体陶瓷材料的晶相、微组织结构与湿敏特性。指出:掺入适量低共熔氧化物 Bi_2O_3,能在900℃合成温度下得到 MeCr_2O_4尖晶石结构。该材料经1300℃高温预处理后,按标准陶瓷工艺技术制得的烧结样品(φ10×1.0mm)固有阻值为106Ω数量级。微结构显示多孔网络特征,材料灵敏度适中,是制作湿度传感器的一种有实用价值的多孔质敏感材料。     

高分子电阻型湿敏材料的老化机理

本文以聚苯乙烯磺酸钠为湿敏材料制备了高分子电阻型湿度传感器,研究了其在高温高湿环境下,施加交流电激励后的老化行为。考察了通电电压、通电时间等对传感器响应特性的影响,并对其老化机理进行了探讨。提出通电老化后,湿敏材料在不同湿度下的电阻变化决定于高温高湿环境造成的溶解效应和施加电压后引起的通道效应和离子破坏效应。研究表明,在较高湿度环境下(87~93%RH),施加800mv的电压可加速湿敏材料的老化过程,使湿度传感器响应信号较快达到稳定,从而有望改善湿度传感器的稳定性。     

SnO2-K2O-LiZnVO4系材料湿敏性能及导电机理的研究

采用共沉淀法制备出SnO2-K2O-LiZnVO4系湿敏粉体,考察了液相掺杂K 对材料湿敏特性的影响,并用直流特性法对材料的导电机理进行了分析.实验结果表明,适当的K 液相掺杂可使材料具有低湿电阻小,灵敏度适中的特性.直流特性法分析表明,材料属电子-离子混合导电机制,且离子电导成分越多材料的湿敏特性越好.     

碱金属掺杂的铁系陶瓷湿敏材料特性研究

本文报导了碱金属掺杂对以 Fe_2O_3为基的陶瓷材料湿敏特性影响的研究结果。碱金属掺杂对改善材料敏感性与微组织结构有显著作用。研究发现,K~+,La~(3+)等离子的掺杂能明显降低材料固有阻值,提高低湿区敏感特性,改善阻—湿特性的线性关系。文中对水法处理与多元掺杂对减小材料湿滞,提高感湿灵敏度的作用机制给予了讨论。     

国内外高分子电容式湿敏材料研究现状

综述了近年来国内外发展迅速的高分子电容式湿敏材料的研究状况,并对其今后的研究方向作了分析与展望.     

高分子湿敏电容的设计

从传感器功能要求出发,阐述了高分子湿敏电容正向设计规则.介绍了电容型高分子湿敏元件的感湿机理、元件结构、工艺过程和感湿材料设计方法,同时以应用示例给予说明.     

半导体光催化技术研究进展

光催化材料以其光致电、空气净化、杀菌除臭、废水处理等独特功能而备受研究者关注.综述了半导体光催化技术原理、研究发展现状及其产业化应用进程,分析了该领域尚存在的一些问题并对未来研究方向进行了展望.     

Ab Initio Study of Magnetism in III-V- and II-VI-Based Diluted Magnetic Semiconductors

Electronic structure and magnetic properties of Ga_1–x Mn _x As, Ga_1–x Mn _x N, Zn_1–x M _x O, and Zn_1–x M _x Te (M=V, Cr, Mn, Fe, and Co) diluted magnetic semiconductors (DMS) are calculated by the tight-binding LMTO method in the 64-atom supercell. Calculations are made at several x with varied spatial distribution of dopant atoms and codoping of DMSs. The results show that stability of the ferro- and antiferromagnetic (FM and AFM) states in DMSs strongly correlates with the occupation and energy position of 3d-dopant bands. Adequacy of the double exchange and superexchange mechanisms for explanation of the FM vs. AFM competition is discussed.     

Magneto-Optical Study of Multiple Layers of Self-Assembled Quantum Dots Involving Diluted Magnetic Semiconductors

Magneto-optical experiments were carried out on structures comprised of multiple layers of self-assembled quantum dots (QDs) involving diluted magnetic semiconductors (DMSs). Photoluminescence (PL) from interband ground state transitions was clearly observed in these DMS-based QD systems. The PL energy from QD multilayers appears at a lower energy than that emitted by a single QD layer, suggesting that there exists electronic coupling between the QD layers. When an external magnetic field is applied, the PL peaks from QDs both in single-layer and in multilayer form exhibit large Zeeman shifts and a significant enhancement of intensity, a behavior that is typical for many low dimensional systems involving DMSs. In contrast to this behavior, however, we have observed a decrease of the PL intensity as a function of magnetic field in multilayer structures where alternating QW layers contain DMS and non-DMS QDs. We will show evidence that this effect arises from carrier transfer between pairs of QDs from adjacent layers (double QDs) due to the large Zeeman shifts of the conduction and valence bands characteristic of DMS QDs.     

基于从头算法的TM金属共掺杂的ZnO基稀磁半导体的磁性研究(英文)

本文采用从头计算的方法研究了基于过渡性金属共掺杂Ⅱ-Ⅵ族稀释半导体的磁性和电子结构.并系统的研究了氧化锌基的稀释半导体铁磁态的稳定性和对其材料设计.在所有的共掺杂体系中,发现(Mn,Co),(Co,Ni)和(Mn,Ni)共掺杂体系是铁磁态的,而(Fe,Ni)共掺杂体系是自旋玻璃态.另一方面,Fe-,Co-和Ni掺杂ZnO基系统的稳态是铁磁态.同时,本文研究了ZnO基稀释半导体的载流子传导铁磁性,计算分析了电子态密度,铁磁态的稳定性.结合双交换和超交换理论解释共掺杂稀释半导体的磁性机理.     

Ab Initio Study of Curie Temperatures of Diluted Magnetic Semiconductors

The Curie temperature of diluted (Ga,Mn)As magnetic semiconductors in the presence of As antisites is studied from first principles. We map total energies associated with rotations of Mn-magnetic moments onto the effective classical Heisenberg Hamiltonian which is treated in the mean-field approximation to find the Curie temperature. The presence of donors strongly reduces the Curie temperature and gives rise to a ground state with a partial disorder of local moments. We show that the observed dependence of the Curie temperature on the Mn concentration indicates that the concentration of As antisites increases with the Mn content.     

异质复合结构纳米纤维SnO2/ZnO的制备及其气敏特性研究

采用静电纺丝法制备了多级中空结构的SnO₂纳米纤维, 然后将SnO₂纳米纤维置于90℃乙酸锌溶液中, 恒温水浴条件下, 在SnO₂纳米纤维上生长了ZnO纳米球, 形成了异质结构的SnO₂/ZnO复合纳米纤维。分别通过XRD、SEM、EDX和XPS等表征手段对异质复合纳米纤维SnO₂/ZnO材料的结构、形貌及元素含量进行了表征分析。异质结构的SnO₂/ZnO复合纳米纤维保持了SnO₂纳米纤维多级中空的纤维结构, SnO₂纳米纤维长度约为300 nm, 依附于SnO₂纤维表面的SnO₂纳米颗粒生长的ZnO纳米球直径为250~300 nm。采用静态气体测试系统对异质复合纳米纤维SnO₂/ZnO气敏元件的气敏性能进行了测试。测试结果表明: 异质复合纳米纤维SnO₂/ZnO气敏元件在最佳工作温度350℃下, 对(0.5~100)×10^-6丙酮具有优异的响应灵敏度、较好的选择性和长期稳定性。异质复合纳米纤维SnO₂/ZnO中存在于ZnO纳米球与SnO₂纳米颗粒间的N-N同型异质结导致复合材料晶界势垒高度的降低, 改善了电子与空穴的输运特性, 促使SnO₂/ZnO异质复合纳米纤维的吸附能力大大增强, 从而改善了SnO₂/ZnO元件的丙酮敏感特性。     

Wearable Electronics Based on Stretchable Organic Semiconductors

Wearable electronics are attracting increasing interest due to the emerging Internet of Things (IoT). Compared to their inorganic counterparts, stretchable organic semiconductors (SOSs) are promising candidates for wearable electronics due to their excellent properties, including light weight, stretchability, dissolubility, compatibility with flexible substrates, easy tuning of electrical properties, low cost, and low temperature solution processability for large-area printing. Considerable efforts have been dedicated to the fabrication of SOS-based wearable electronics and their potential applications in various areas, including chemical sensors, organic light emitting diodes (OLEDs), organic photodiodes (OPDs), and organic photovoltaics (OPVs), have been demonstrated. In this review, some recent advances of SOS-based wearable electronics based on the classification by device functionality and potential applications are presented. In addition, a conclusion and potential challenges for further development of SOS-based wearable electronics are also discussed.