掺硼多晶硅的远红外光谱

用傅里叶变换光谱仪在15K和230～620cm~(-1)范围内研究了不同含Fe量的P型掺B多晶硅的远红外吸收光谱.观测和分析了Si中受主(B)基态到P_(3/2)价带相关的激发态系列的跃迁.实验结果表明,随着Fe浓度的增加,B受主激发谱的吸收强度显著减弱.证明Fe-B对的形成和Fe杂质在晶粒边界的可能的积累.实验还观测到P型Si(B)中不同含Fe量时607cm~(-1)处C局域振动模的吸收变化,讨论了Fe杂质对C振动吸收的影响.     

GaAs中碳局域模振动红外吸收的温度依赖关系

砷化镓中C_(As)在582cm~(-1)处的局域振动模(LVM)吸收带于低温下存在精细结构,利用其中同位素效应产生的分裂谱线很锐(25K时半高宽小于0.1cm~(-1))的特点,研究了吸收谱线的频率和半高宽以及整个吸收带的积分吸收随温度的变化关系.在GaAs中,C_(As)LVM与晶格带模振动之间的非简谐耦合虽然比离子性较强的晶体中要弱,但在温度变化引起谱线发生频移和半高宽变化时,非简谐效应起了重要的作用.在一些P型和高阻样品中,C_(As)LVM吸收带的积分吸收在低温下随温度降低而反常减小,可用带负电荷的C_(As)受主中心浓度随温度降低而减少来解释,由此获得C_(As)受主消电离情况的信息.     

260-285nm波段苯胺的共振增强多光子电离研究

在自行研制的具有恒温加热进样系统的激光质谱仪上获得了260-285 nm波段气相苯胺分子的共振增强多光子电离／飞行时间质谱(REMPI-TOFMS)。结合在266 nm激发波长下得到的C6H7N 、C5H6 、C4H3 、C3H3 、C2H4 及H2CN 离子的光强指数及不同激光能量下各离子信号强度的分支比,对分子离子及主要碎片离子的生成机理进行了探讨:在此波段范围内,苯胺分子首先吸收一个光子跃迁至1B2第一激发态,处于激发态的苯胺分子再吸收一个光子电离生成分子离子C6H7N ,分子离子进一步吸收光子解离为C5H6 、H2CN 、C6H5 ,碎片离子C6H5 继续吸收光子解离产生C4H3 、C3H3 、C2H4 ,并给出了可能的解离通道。     

量子限制效应对限制在多量子阱中受主束缚能的影响

从实验和理论上,研究了量子限制效应对限制在GaAs/AIAs多量子阱中受主对重窄穴束缚能的影响.实验中所用的样品是通过分子束外延技术生长的一系列GaAs/AIAs多量子阱,量子阱宽度从3nm到20nm,并且在量子阱中央进行了浅受主铍(Be)原子的δ掺杂.在4,20,40,80和120K不同温度下,分别对上述系列样品进行了光致发光谱(PL)的测量,清楚地观察到了受主束缚激子从ls3/2(Г6)基态到同种宇称2s3/2(Г6)激发态的两空穴跃迁,并且从实验上测得了在不同量子阱宽度下受主的束缚能.理论上应用量子力学中的变分原理,数值计算了受主对重空穴束缚能随量子阱宽度的变化关系,比较发现理论计算和实验结果符合较好.     

量子限制效应对限制在多量子阱中受主束缚能的影响

从实验和理论上,研究了量子限制效应对限制在GaAs/AIAs多量子阱中受主对重窄穴束缚能的影响.实验中所用的样品是通过分子束外延技术生长的一系列GaAs/AIAs多量子阱,量子阱宽度从3nm到20nm,并且在量子阱中央进行了浅受主铍(Be)原子的δ掺杂.在4,20,40,80和120K不同温度下,分别对上述系列样品进行了光致发光谱(PL)的测量,清楚地观察到了受主束缚激子从ls3/2(Г6)基态到同种宇称2s3/2(Г6)激发态的两空穴跃迁,并且从实验上测得了在不同量子阱宽度下受主的束缚能.理论上应用量子力学中的变分原理,数值计算了受主对重空穴束缚能随量子阱宽度的变化关系,比较发现理论计算和实验结果符合较好.     

P型LEC-GaAs中双重受主态的研究

在富镓的未掺杂P型LEC-GaAs锭条的头部和尾部样品中,低温下(T≤40K)在低频区和高频区分别观察到两组红外吸收峰.在原生长的 LEC-GaAs 中所观察到的高频区红外吸收,经鉴定与在掺硅或中子辐照处理过的LEC-GaAs中所观测到的、电离能为200meV的受主吸收是一致的.除了从基态到2p_(5/2)(Γ_3)和2p_(5/2)(Γ_7)激发态电子跃迁所相应的吸收外,还观察到了可能与从基态到3p_(3/2)态跃迁相应的吸收峰.4K的光致发光光谱和变温霍尔测量,进一步证实了在未掺杂P型LEC-GaAs锭条中,从头部到尾部都存在电离能为78meV和200meV的双重受主,其浓度沿晶体生长方向(从头到尾)增大.实验结果进一步支持了双重受主是Ga_(As)反位缺陷所产生的看法.     

磁场下硅中硼受主的光热电离光谱

用光热电离光谱方法研究了硅中硼受主杂质能级在０－１１Ｔ磁场下的塞曼效应。观察到硅中硼受主激发态的塞曼分裂与移动。实验结果与讨论表明：由于价带的复杂性、浅受主的基态和激发态在磁场下筒并的解除以及大的空穴有效质量，硅中浅受主的塞曼效应较浅施主更为复杂。     

基于双平行马赫曾德尔调制器和受激布里渊散射效应的十倍频毫米波信号生成

提出了一种基于双平行马赫-曾德尔调制器(DPMZ M)和受激布里渊散射(SBS)效应的10倍频mm 波信号生成方案,具有覆盖频段高和频谱纯度高等优点。在本文方案中,低频率的射频(RF )信号通过DPMZM 对激光器发出的光波进行调制,调节直流偏置电压,使DPMZM的主调制器和两个子调制器均 工作在最小传 输点(MITP),抑制光载波和偶数边带,进一步调节两个子调制器的调制深度和移相器的相 移,抑制一阶和 七阶边带,留下三阶和五阶边带,然后利用SBS效应进行布里渊边带滤波滤除三阶边带,仅 保留五阶边带, 再经光电探测器(PD)拍频即可获得10倍频mm波信号。通过仿真实验,以10 GHz的R F信号为驱 动信号,得到了100GHz的mm波信号,验证了方案的可行性。     

硅中金施主和受主光电性质的系统研究

本文利用光电容和光电流瞬态技术结合 DLTS 测量对P和N型掺金硅(不同补偿比K=N_(Au)/N_s=0.02～0.9)中金施主和受主的行为进行了全面、系统地实验研究.得到如下结果:1.进一步证实了硅中金施主和受主是同一个缺陷的两个不同能态(Au~(+/0)和Au~(0/-)).2.金受主和施主对应的深中心不是金同浅杂质的络合物(Au-Ds).3.实验结果拟合运算得到的金施主电子和空穴光电离截面阈值能量之和基本等于硅的禁带宽度表明:载流子通过金施主激发和俘获时不存在明显的晶格弛豫效应.金受主空穴光电离截面阈值能量大的温度依赖关系可能与空穴通过金受主激发态的光热激发相关.此外,本文还研究了接近阈值能量附近的金施主和受主能级光发射率的电场依赖关系.     

δ掺杂Be受主GaAs/AlAs多量子阱的拉曼光谱

通过显微拉曼(Raman)光谱仪,对一系列δ掺杂GaAs/AlAs量子阱中浅受主铍(Be)原子能级间跃迁进行了研究.实验样品是利用分子束外延技术生长在GaAs衬底(100)面上的GaAs/AlAs多量子阱,阱宽范围从30到200 A,并在阱中央进行了受主Be原子的δ掺杂.在4.2 K液氦温度下,对样品进行了Raman光谱测量,并与光致发光(PL)光谱进行了对比,清楚地观测到了受主原子从基态能级1S_(3/2)(Γ_6)到第一激发态能级2S_(3/2)(Γ_6)之间的跃迁.根据量子力学中的变分原理和打靶法算法,计算了量子阱中类氢受主Be原子1 s到2 s能级间跃迁能量,并和实验结果进行了比较.计算结果表明,受主1 s到2 s能级间跃迁的能量随量子阱宽度减小而单调增加,并且与实验结果符合较好.     

Cover Picture: Excitonic and Vibrational Properties of Single‐Walled Semiconducting Carbon Nanotubes (Adv. Funct. Mater. 17/2007)

The cover picture illustrates excited state dynamics of semiconducting single‐walled carbon nanotubes studied theoretically. Sergai Tretiak and Svetlana Kilina report on p. 3405 that absorption of the light quantum leads to spatially delocalized photoexcitation, which can be described as tightly bound excitons and characterized by 2D plots of transition density. The photoexcitation is coupled to the vibrational degrees of freedom, leading to complex exciton‐phonon dynamics, which can be monitored experimentally using ultrafast spectroscopic probes. We review quantum‐chemical studies of the excited‐state electronic structure of finite‐size semiconducting single‐walled carbon nanotubes (SWCNTs) using methodologies previously successfully applied to describe conjugated polymers and other organic molecular materials. The results of our simulations are in quantitative agreement with available spectroscopic data and show intricate details of excited‐state properties and photoinduced vibrational dynamics in carbon nanotubes. We analyze in detail the nature of strongly bound first and second excitons in SWCNTs for a number of different tubes, emphasizing emerging size‐scaling laws. Characteristic delocalization properties of excited states are identified by the underlying photoinduced changes in charge densities and bond orders. Due to the rigid structure, exciton–phonon coupling is much weaker in SWCNTs compared to typical molecular materials. Yet we find that, in the ground state, a SWCNT's surface experiences the corrugation associated with electron–phonon interactions. Vibrational relaxation following photoexcitation reduces this corrugation, leading to a local distortion of the tube surface, which is similar to the formation of self‐trapped excitons in conjugated polymers. The calculated associated Stokes shift increases with enlargement of the tube diameters. Such exciton vibrational phenomena are possible to detect experimentally, allowing for better understanding of photoinduced electronic dynamics in nanotube materials.     

Observation of a strong vibrational population inversion by CO laser excitation of pure solid carbon monoxide

Under irradiation of a pure solid CO sample at low temperature by a CW CO laser beam,¹³C¹⁶O,¹²C¹⁸O and¹³C¹⁸O molecules are excited to high vibrational levels, up toupsilon = 23, and a strong population inversion is observed. The¹²C¹⁶O molecules are pumped to theupsilon = 1level by laser line absorption in the low frequency phonon sideband, and the vibrational energy is subsequently transferred to the other isotopes. Quantum yield, efficiency, and heat release are discussed to clarify the mechanism.     

Vibrational Spectroscopy of Na–H Complexes in ZnO

Sodium acceptors were diffused into ZnO bulk single crystals to a depth of ~1μm, with a near-surface concentration of ~10¹⁸–cm³. An O–H local vibrational mode (LVM) was observed at 3304–cm^–1, at a temperature of 9 K, in hydrogenated samples. The LVM is attributed to an O–H bond-stretching mode adjacent to a Na acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2466–cm^–1. The isotopic frequency ratio is similar to values found in other hydrogen complexes. In the deuterated sample, a sideband at 2461–cm^–1 is attributed to a Fermi resonance.     

Excitonic and Vibrational Properties of Single‐Walled Semiconducting Carbon Nanotubes

We review quantum‐chemical studies of the excited‐state electronic structure of finite‐size semiconducting single‐walled carbon nanotubes (SWCNTs) using methodologies previously successfully applied to describe conjugated polymers and other organic molecular materials. The results of our simulations are in quantitative agreement with available spectroscopic data and show intricate details of excited‐state properties and photoinduced vibrational dynamics in carbon nanotubes. We analyze in detail the nature of strongly bound first and second excitons in SWCNTs for a number of different tubes, emphasizing emerging size‐scaling laws. Characteristic delocalization properties of excited states are identified by the underlying photoinduced changes in charge densities and bond orders. Due to the rigid structure, exciton–phonon coupling is much weaker in SWCNTs compared to typical molecular materials. Yet we find that, in the ground state, a SWCNT's surface experiences the corrugation associated with electron–phonon interactions. Vibrational relaxation following photoexcitation reduces this corrugation, leading to a local distortion of the tube surface, which is similar to the formation of self‐trapped excitons in conjugated polymers. The calculated associated Stokes shift increases with enlargement of the tube diameters. Such exciton vibrational phenomena are possible to detect experimentally, allowing for better understanding of photoinduced electronic dynamics in nanotube materials.     

Temperature dependent optical properties of self-organized InAs/GaAs quantum dots

We report photoluminescence (PL), time-resolved PL, and PL excitation experiments on InAs/GaAs quantum dots (QDs) of different size as a function of temperature. The results indicate that both the inhomogeneous properties of the ensemble and the intrinsic properties of single QDs are important in understanding the temperature-dependence of the optical properties. With increasing temperature, excitons are shown to assume a local equilibrium distribution between the localized QD states, whereas the formation of a position-independent Fermi-level is prevented by carrier-loss to the barrier dominating thermally stimulated lateral carrier transfer. The carrier capture rate is found to decrease with increasing temperature and, at room temperature, long escape-limited ground state lifetimes of some 10 ps are estimated. PL spectra excited resonantly in the ground state transition show matching ground state absorption and emission, indicating the intrinsic nature of exciton recombination in the QDs. Finally, the PL excitation spectra are shown to reveal size-selectively the QD absorption, demonstrating the quantum-size effect of the excited state splitting.     

Design and Characterization of a 211–275 GHz Sideband Separating Mixer for the APEX Telescope

We present the final results of the development and characterization of the sideband separating superconductor-insulator-superconductor (SIS) mixer for the APEX telescope band 1 (211-275 GHz). The sideband separation is achieved by using a quadrature scheme where the radio frequency (RF) and a local oscillator (LO) power are applied to two identical double sideband SIS mixers. All mixer components, including the LO and RF distribution circuitry, are integrated into a single mixer block. To achieve a compact design we developed a superconducting Lange coupler, based on Nb thin film, which is used as an intermediate frequency hybrid. Typical single sideband noise temperature of 100 K and sideband rejection ratio of about 12 dB and are measured.     

Optical limiting and nonlinear absorption of excited states inmetalloporphyrin-doped sol gels

Optical limiting and upconverted luminescence have been studied in different chromophore-doped aluminosilicate gel materials and the effects of the dynamic processes from different central ions are discussed. Chromophores are metalloporphyrins of tetra-4-sulfonatophenylporphyrinato-copper(II) and tetra-4-sulfonatopfienylporphgrinato-zinc(II) (CuTPPS and ZnTPPS, respectively) which are embedded in aluminosilicate gel hosts. Photo-upconverted luminescence was observed and believed to result from the radiative recombination of the second excited singlet state. Saturated behavior of upconverted emission was found as a function of incident excitation intensity. An optical limiting phenomenon associated with reverse saturated absorption was studied. These effects are attributed to higher excited state, absorption. The observation of upconverted luminescence indicates that the upper excited state absorption occurs while nonlinear absorption is being observed. Dynamic analysis of excited state processes indicates that intersystem crossing and triplet-triplet (quartet-quartet) absorption dominates nonlinear processes and suggests that saturation absorption or reverse saturation absorption is dependent on the ratio of the effective absorption cross section for the excited states to that for the ground state. Absorption cross sections for the excited states are estimated by the data fitting to upconverted emission intensity and nonlinear absorption     

Energy transfer up-conversion and excited state absorption of laserradiation in Nd:YLF laser crystals

Experiments at room temperature were carried out to study the higher order processes that produced the yellow and blue fluorescence observed in Nd:YLF laser crystals, which were pumped by lasers with wavelengths between 785 nm and 811 nm, and with the pump power density ranging from 10 to 30 kW/cm², or the stored energy density, 15-45 J/cm³. The analysis of the experimental results provided an explanation for the performance degradation of a Q-switched laser with increasing pump intensity. These higher order processes were energy transfer up-conversion and excited state absorption of both pump and laser radiation. A model was also developed based upon rate equations to describe these higher order processes. This model allowed us to discriminate between these processes and to determine which one played the most important role. The experimental results agreed well with the predictions of the model. It is concluded that the energy transfer up-conversion process is the dominant mechanism for the population of the ⁴G_7/2 multiplet. It is also concluded that excited state absorption of the 1.05 μm or 1.3 μm radiation from the ⁴G_7/2 multiplet play a significant role in populating the ²P_3/2, ² D(1)_5/2, and ²P_½ manifolds, and in the performance of Nd:YLF lasers operating in the pulsed mode. The effect of excited state absorption of the pump radiation from the ⁴F_½ multiplet is much less important     

GaAs/AlGaAs多量子阱结构中的电子干涉

由电子波干涉的观点出发,理论分析指出:多量子阱结构势垒以上的电子存在一些分立的弱干涉非定域态.通过红外光激发,量子阱中基态电子可以跃迁到这些态上形成一些吸收峰.理论计算出的吸收峰位置与实验测量到的结果相当一致,并且理论估计的吸收峰强弱也与实验结果一致.     

采用不同可饱和吸收体的Nd：YAG激光器的锁模运转

本文报道采用五甲川染料、Cr^4 ：YAG和LiF:F2分别作为可饱和吸引体实现闪光灯泵浦的Nd:YAG激光器的锁模运转,得到稳定的单脉冲序列。着重分析了Cr^4 :YAG激光态吸收饱和导致的被动锁模以及在LiF:F2^-调Q下Nd:YAG的自聚焦引起的锁模运转机制的锁模过程、理论分析与实验结果一致。