AlGaAs/GaAs HBT电压比较器

本文对异质结双极晶体管(HBT)电压比较器进行了理论分析,设计并制作了国内第一个AlGaAs/GaAs HBT电压比较器电路。首先,分析了HBT的基本工作原理;然后比较详细地分析了ECL电压比较器的工作原理并进行了设计。随后介绍了HBT的E-M模型,提取了模型参数,并对电路进行了模拟;最后全面介绍了AlGaAs/GaAs HBT电压比较器的制作过程。测试结果表明,HBT器件直流电流增益大于100,f_T为15.2GHz,f_(max)为14.8GHz;电路具有取样和锁存能力,并具有电压比较器的初步功能。     

47GHz SiGe-MMIC振荡器

据《’99IEEE MTT- s Digest MO1 A- 1》报道 ,德国戴姆勒·克莱斯勒研究中心和柏林弗尔南得·布朗大学共同研制了采用 Si Ge- HBT MMIC的 47GHz振荡器。该振荡器的输出功率为 1 3.1 d Bm,效率为 1 3.6 % ,距载波 1 0 0 k Hz的相位噪声为 - 99.31 d Bc/Hz。其结果对 Si Ge- HBT振荡器而言是相当优异的。Si Ge- HBT的特征频率 ( f T)为 1 2 6 GHz,最大振荡频率 ( fmax)为 1 6 0GHz图　 4 7GHz振荡器图示Fig.　 Photo of the4 7GHz oscillator47GHz SiGe-MMIC振荡器@孙再吉…     

一款应用于Wi-Fi 6E设备的GaAs HBT功率 放大器

针对WIFI 6E频段的设备需求,设计了一款工作在5.9 GHz～7.2 GHz的宽带砷化镓异质结双极型晶体管（GaAs HBT）功率放大器。功率放大器为三级放大拓扑结构,采用自适应偏置电路结构解决HBT晶体管在大功率输入下偏置点变化及自热效应引起增益及线性度恶化的问题。测试结果表明,在5.9 GHz～7.2 GHz频段内,功率放大器增益>27 dB,输出饱和功率>1 W,附加效率>24 %,芯片面积：1.24 mm×1.27 mm。     

InP基MOCVD及MBE外延生长HBT的制备与分析

设计并研制了用于光电集成(OEIC)的InP基异质结双极晶体管(HBT),介绍了工艺流程及器件结构。分别采用金属有机化学气相沉积(MOCVD)及分子束外延(MBE)生长的外延片,并在外延结构、工艺流程相同的条件下,对两种生长机制的HBT直流及高频参数进行和分析。结果表明,采用MOCVD生长的InP基HBT,直流增益为30倍,截止频率约为38GHz;MBE生长的HBT,直流增益达到100倍,截止频率约为40GHz。这表明,MBE生长的HBT外延层质量更高,在相同光刻条件下,所对应的HBT器件的性能更好。     

放大技术、放大器

Y98-61303-743 9906005带有 AlInAs/GaInAs 转移衬底异质结双极晶体管(HBT)的50GHz 反馈放大器=A 50GHz feedback am-plifier with AlInAs/GaInAs transferred-substrate HBT[会,英]/Agarwal,B.& Mensa,D.//1997 IEEE In-ternational Electron Devices Meeting.—743～746(AG)转移衬底异质结双极晶体管(HBT)具有很高的f_(max),是用于超高速集成电路很有竞争力的候选者。本文介绍一种采用 AlInAs/GaInAs 转移衬底 HBT 的宽带放大器。它采用带电阻性反馈的简单复合晶体管结构,其增益为13dB,3dB 带宽为50GHz。文中还讨论了该放大器的电路设计。参5     

InP基长波长单片集成光接收前端的设计和制备

叙述了利用InP基长波长pin光探测器和异质结双极晶体管(HBT)单片集成实现光接收前端的设计和制备方法.pin光探测器和HBT采用共享层结构,这样的结构不仅性能优于堆叠层结构,而且制备工艺兼容.制备的HBT截止频率达到30GHz,pin光探测器的3dB带宽达到了15GHz,集成光接收前端的3dB带宽达到3GHz,跨阻放大倍数达到800.     

基本电路

Y2002-63306-505 0307289采用转换衬底 HBT 工艺的19GHz 时钟频率2位加法器进位与和逻辑电路=2-bit adder carry and sum logiccircuits clocking at 19GHz clock frequency in transferredsubstrste HBT technology[会,英]/Mathew,T.& Ja-ganathan,S.//2001 IEEE International Conference onIndium Phosphide and Related Materials.—505～508     

TiSi2在微波低噪声SiGe HBT中的应用

通过在SiGe HBT外基区和多晶发射极上制作TiSi2,从而使器件的高频噪声系数得到进一步降低.以PD=200mW的SiGe HBT为例,采用TiSi2工艺的噪声系数典型值为F=1.6dB@1.1GHz,明显低于无TiSi2工艺SiGe HBT的2.0dB@1.1GHz,且频率越高,二者差别越大.     

技术动态

<正> 日本电气试制了截止频率f_T为45GHz的Al_(0.25)Ga_(0.75)As/GaAs HBT(异质结双极晶体管)。该HBT的两条发射极(尺寸3×3μm~2)夹住中间的一条基极。这种结构与过去的把发射极放在中间,两边配上基极的HBT相比,集电极-基极电容C_(BC)大约只有原来的1/2,因此提高了f_T。该HBT的电流放大系数h_(FE)=20,跨导g_m=5000mS/mm。在V_(CE)=2.6V,I_C=27.3mA时,获得f_T为45GHz。最大振荡频率f_(max)是18.5GHz(V_(CE)=4V,I_C=18mA)。王令译自“日经电子学”(日),No.409,p.56,1986     

HBT的制作工艺

<正> 1 前言异质结双极晶体管(HBT)早已是人们所期望的超高速、超高频器件。最近已经试制出电流增益截止频率F_T和最高振荡频率F_M分别超过100GHz的AlGaAs-GaAs系HBT。由于能够把HBT的基极电阻、基区渡越时间及发射极-基极结电容做得很小,所以从本质上讲;HBT具有充当高速器件的有利的一面,但为了更有效地利用好     

High/fmax collector-up AlGaAs/GaAsheterojunction bipolar transistors with a heavily carbon-doped basefabricated using oxygen-ion implantation

AlGaAs/GaAs collector-up heterojunction bipolar transistors (HBTs) with a heavily carbon-doped base layer were fabricated using oxygen-ion implantation and zinc diffusion. The high resistivity of the oxygen-ion-implanted AlGaAs layer in the external emitter region effectively suppressed electron injection from the emitter, allowing collector current densities to reach values above 10⁵ A/cm ². For a transistor with a 2-μm×10-μm collector, f_T was 70 GHz and f_max was as high as 128 GHz. It was demonstrated by on-wafer measurements that the first power performance of collector-up HBTs resulted in a maximum power-added efficiency of as high as 63.4% at 3 GHz     

GaAs/AlGaAs heterojunction MISFET's having 1-W/mm power density at 18.5 GHz

The previously reported GaAs/AlGaAs heterojunction MISFET with an undoped AlGaAs layer as an insulator has been further optimized for power operation at upper Ku band. A 300-µm gate-width device generated 320 mW of output power with 33-percent efficiency at 18.5 GHz. The corresponding power density exceeds 1 W/mm. When optimized for efficiency, the device has achieved a power added efficiency of 43 percent at 19 GHz.     

A low power 2.5-5 GHz low-noise amplifier using 0.5-μm GaAs pHEMT technology

正A two-stage 2.5-5 GHz monolithic low-noise amplifier(LNA) has been fabricated using 0.5-μm enhanced mode AlGaAs/GaAs pHEMT technology.To achieve wide operation bandwidth and low noise figure,the proposed LNA uses a wideband matching network and a negative feedback technique.Measured results from 2.5 to 5 GHz demonstrate a minimum of 2.4-dB noise figure and 17-dB gain.The input and output return loss exceeded -10-dB across the band.The power consumption of this LNA is 33 mW.According to the author's knowledge,this is the lowest power consumption LNA fabricated in 0.5-μm AlGaAs/GaAs pHEMT with the comparable performance.     

Millimetre wave performance of carbon-doped-base AlGaAs/GaAs HBTs

AlGaAs/GaAs HBTs with f/sub T/ of 52 GHz and f/sub max/ of 85 GHz have been obtained using a heavily-carbon-doped base layer. The HBT epitaxial layers were prepared by low-pressure MOVPE using carbon tetrachloride as the carbon source. To the author's knowledge, this work reports the first carbon-doped AlGaAs/GaAs HBTs with f/sub T/ and f/sub max/ greater than 50 GHz.<>     

Self-aligned InGaP/GaAs heterojunction bipolar transistors formicrowave power application

As an alternative to AlGaAs/GaAs heterojunction bipolar transistors (HBTs) for microwave applications, InGaP/GaAs HBTs with carbon-doped base layers grown by metal organic molecular beam epitaxy (MOMBE) with excellent DC, RF, and microwave performance are demonstrated. As previously reported, with a 700-Å-thick base layer (135-Ω/sq sheet resistance), a DC current gain of 25, and cutoff frequency and maximum frequency of oscillation above 70 GHz were measured for a 2-μm×5-μm emitter area device. A device with 12 cells, each consisting of a 2-μm×15-μm emitter area device for a total emitter area of 360 μm², was power tested at 4 GHz under continuous-wave (CW) bias condition. The device delivered 0.6-W output power with 13-dB linear gain and a power-added efficiency of 50%     

碳掺杂AlGaAs的MOCVD生长及808 nm大功率激光器

用 CCl4 作为掺杂剂 ,进行了掺碳 Al Ga As层的 LP-MOCVD生长 ,并对其掺杂特性进行了研究 ,分析了各生长参数对掺杂的影响 ;研制了碳掺杂 Al Ga As限制层 80 8nm大功率半导体激光器 ;激光器单面连续波输出功率大于 1 W,功率效率为 0 .7W/ A。     

An 18-34-GHz dynamic frequency divider based on 0.2-μmAlGaAs/GaAs/AlGaAs quantum-well transistors

The design and performance of a dynamic frequency divider was presented. This digital IC demonstrates the ability of the authors' AlGaAs/GaAs/AlGaAs quantum-well FETs with gate lengths of 0.2 μm. Stable operation was achieved in the frequency range from 18 GHz up to 34 GHz with a power consumption of 250 mW. To the authors' knowledge, this is the best result ever reported for HEMT circuits, and is similar to the frequency limit achieved by use of AlGaAs/GaAs HBTs     

GaAs heterostructure FET frequency dividers fabricated with high-yield 0.5 mu m direct-write trilevel-gate-resist

Frequency dividers and FET test structures have been fabricated on selectively doped n/sup +/AlGaAs/GaAs heterostructure FETs (HFETs) with 0.5 mu m gate length electron-beam direct-writing on a novel trilevel resist, EBR-9/Ge/PMGI. A divide-by-two master-slave frequency divider fabricated with direct-coupled FET logic gates operated up to 9.3 GHz. The input frequency range of a divide-by-two transmission-gate frequency divider was from 3.2 to 12.2 GHz, with a supply voltage of 1.2 V at room temperature. The average propagation delay (fan-in and fan-out=1) was 18.2 ps/gate, with a power dissipation of 3.9 mW/stage. With a 3.5 mu m source-drain spacing, a peak transconductance of 360 mS/mm was measured. The functional yield of both discrete devices and circuits was 92% across 2 in-diameter wafers.<>     

Observation of high-frequency high-field instability inGaAs/InGaAs/AlGaAs DH-MODFETs at K band

The authors report the observation of high-field instability at room temperature with oscillation frequency as high as 24 GHz in GaAs/InGaAs/AlGaAs double-heterojunction-MODFETs (DH-MODFETs) of 1.2 μm gate length. Negative drain differential resistance was also observed in these devices under various forward gate biases. The nature of this instability is believed to be caused by the efficient removal of the real-space transferred hot two-dimensional electrons in the AlGaAs layer through the forward-biased Schottky gate. A tuned oscillator, with a fundamental oscillation frequency as high as 19.68 GHz, has also been demonstrated at a gate bias of 1.3 V     

应用于C-X-Ku波段的宽带功率放大器

采用0.25μm AlGaAs/InGaAs/GaAs PHEMT工艺技术,研制出了6～18GHz三级MMIC全匹配宽带功率放大器单片.在6～18GHz的工作频率下,放大器的平均功率增益为19dB,输出功率大于33.3dBm,在10GHz处有最大输出功率34.7dBm,输入回波损耗S11低于-10dB,输出回波损耗S22低于-6dB.与报道的C-X-Ku频段宽带功率放大器相比,有较好的功率平坦度.