光纤用紫外固化着色涂料固化研究

光纤用着色涂料着色后。光纤所有表面就被薄而牢固的聚合物层所覆盖。从而可对光纤进行区分。然而．这一薄的着色层的固化度对光纤的传输特性及光缆的性能会产生影响。虽然现代紫外固化配方技术使不同颜色的紫外固化着色料有相似的固化性能．但由于不同颜料对紫外固化着色涂料固化性能的影响不尽相同．从而不同颜色的着色料在相同固化条件下其固化性能也有所差异。因此．选择一所有颜色具有相似的固化性能的着色涂料对于现代高速着色工艺就显得非常关键和重要。     

UV固化着色料的固化度测定

光纤用着色涂料着色后,光纤所有表面就被薄而牢固的聚合物层覆盖,从而可对光纤进行区分.然而,这一薄的着色层的固化度对着色料在光纤上的性能和对光纤的传输特性及光缆的性能会产生影响.因此,用一定的方法对固化度进行检测以保证材料性能是很重要的,并对目前常用的固化性能测试方法,以及如何提高溶剂擦拭方法的重现性进行了讨论.     

DeSolite Supercoatings^TM 助推光纤全面发展 下一代涂料技术优化多用户单元光纤部署

紫外光固化涂料行业领军者帝斯曼称．其研发的行业领域新代的光纤涂料技术DeSolite Supercoatings^TM能优化当今多用户单元环境下的光纤部署。DeSolite Supercoatings^TM能提高紧凑型光缆中的光纤芯数，在极端弯曲的应用中可增加应力缓冲、改善光纤传输衰减性能。     

高强度碳涂覆光纤的研制

高强度碳涂覆光纤的制造工艺是在拉丝过程中碳沉积在光纤表面，然后再涂覆紫外固化涂料，整个工艺在拉丝过程中完成。此种光纤显示出高的抗疲劳特性和抗氢渗透特性，并能经受高的长期工作应力而强度不降低。碳涂层能保持光纤的传输性能不变，我们９５年已能拉制长度大于５ｋｍ，筛选强度为１．３８ＧＰａ的高强度碳涂覆光纤。     

涂覆法制作聚苯乙烯芯聚合物光纤工艺

阐述了溶液涂覆法生产苯乙烯（PS）芯聚合物光纤（POF）的工艺过程，其中皮材溶液可采用皮材和溶剂配制的方法制备，也可采用溶液聚合物的方法制备，POF皮层的形成可采用烘干和紫外固化工艺。并介绍了皮材单体的选择及溶剂，引发剂的浓度、聚合温度和氧气对皮材分子量及性能的影响。     

光纤被覆层的改进

现在可用紫外固化的丙烯酸酯混合物涂层系统,除去机械涂层而不会影响光纤强度,光纤也容易从发货盘上放出。早期用Gloge结构方式(图1)进行的紫外固化的丙烯酸酯涂层,业已证明能有效地保护光纤波导的机械和光学性能。此外,还几乎满足光纤及光缆制造者的全部特性和加工要求,以及光缆用户的要求。由于低模数的一次涂层和高模数二次涂层可单独地变化,因此,两层     

无应力老化条件下二氧化硅基玻璃光纤强度衰退和复原

聚合物涂导光纤和裸光纤在苛刻环境下经老化后再进行干燥处理，用两点弯曲技术在液氮中测量其强度，试验结果表明，干燥后的聚合物涂层光纤强度能复原，而裸光纤强度则继续衰退。观察到的涂层光纤强度复原是由老化期间的光纤表面水化层的凝聚固化所致。     

DSM Desotech

帝斯曼迪索(DSM Desotech)公司是为当今多个先进领域发展高性能紫外光(UV)固化材料的全球领先公司.在电信业,DSM Desotech是保护光纤、光缆产品的涂料、油墨和光纤带涂料等材料的世界领导供货商.帝斯曼迪索透过开发能降低信号损失、延长光纤寿命、提供更可靠性能及更高带宽的光纤涂料,成为网络投资的未来保障.     

电子元器件用有机硅系胶粘剂

对当今的电子工业来讲,高分子材料中具有特种功能的有机硅是必不可少的。由于有机硅系以二甲基硅氧烷键为基本骨架,所以既具有耐热、耐寒、脱模、憎水消泡及优异的电性能,同时又具有相反的性能——粘接性,发泡性、亲水性等。有机硅系胶粘剂有机硅产品品种繁多,但其中用作胶粘剂的有室温固化硅橡胶(RTV)和低温固化硅橡胶(LTV)。按其用途可分为以下几种: 1、粘接:元器件的粘接固定及密封,减震,缓冲。     

LSZH挤塑紧套光纤工艺注意事项

引言在室内光缆中的光纤多采用紧套结构,光纤的紧套结构通常有两种:一种使用外径为250μm的紫外线固化一次涂覆光纤(UV光纤)直接紧套至900μm;另一种是将外径为250μm的UV光纤外面涂覆一层缓冲层(缓冲层外径为350-500μm)后再紧套至900μm。光纤的涂覆层应由一层或几层相同的或不同的材料组成,一般采用紫外线固化丙烯酸脂或硅橡胶。光纤若不经进一步增强保护是不能直接施工使用的,其原因在于大部分光纤的断裂伸长率极低,     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.