Ni-Al-V合金DO22相间有序畴界面的微观相场模拟

利用微观相场动力学模型模拟Ni-A1-V合金沉淀过程中DO22(Ni3V)相沿[100]和[001]方向形成的有序畴界面,对界面结构及其界面处合金元素的成分进行了研究.结果表明:DO22相沿[100]和[00l]方向形成3种稳定界面,且都不可以迁移;界面性质与界面结构有关,(002)//(100)界面处易析出上J12相,主要存在于沉淀早期;(002)//(100)·1/2[100]界面在沉淀后期易形成一种过渡界面;{110}孪晶界面则是三类界面中相对常见和稳定的界面;合金元素在不同的界面处有不同的偏聚和贫化倾向,在所有的界面处V原子贫化而Ni原子偏聚,Al原子在(002)//(100)·1/2[100]界面处贫化,在其它界面处偏聚,且各元素在不同的界面处偏聚以及贫化程度也不一样.     

L12相间有序畴界成分的微观相场研究

利用微观相场模型研究了有序畴界结构、合金成分和弹性应变能对Ni75AlxV25-x合金中L12-Ni3Al相间有序畴界成分的影响规律。结果表明:L12相间形成的3种有序畴界中,在(100)//(200)·[001]处,Ni的贫化程度最小,Al的贫化程度最大,V的偏聚程度最大;在(200)//(200)处,Ni的贫化程度最大,Al的贫化程度最小,V的偏聚程度最小。随着合金中Al浓度的增加,3种有序畴界处Ni的浓度降低,Al的浓度升高,V的浓度降低。弹性应变能使得L12相间3种有序畴界处Ni和Al的浓度升高,V浓度降低。但弹性应变能对(200)//(200)·[001]和(100)//(200)·[001]成分的影响较大,对(200)//(200)成分的影响则相对较小。     

应力时效对L1_2间反相畴界成分影响的微观相场模拟

基于微观相场模型研究了应力时效对Ni75Al15V10合金中L12-Ni3Al相间反相畴界成分的影响规律。研究表明,L12相间存在3种反相畴界,其中(200)//(200)·[001]和(100)//(200)·[001]与已有文献中实验发现的L12-Ni3Fe相间反相畴界结构一致;在3种反相畴界处,Ni、Al贫化,V偏聚,应力时效使得L12相间3种反相畴界处Ni和Al的浓度升高,V浓度降低;应力时效对(200)//(200)·[001]和(100)//(200)·[001]成分的影响较大,对(200)//(200)成分的影响则相对较小;相同反相畴界处,应力时效对不同合金元素浓度的改变也不同。     

Ni-Al-V合金L12相间有序畴界面的微观相场模拟

利用微观相场动力学模型模拟Ni-Al-V合金沉淀过程中L12(Ni3Al)相间有序畴界面,对界面结构及其界面处原子的行为进行了研究.结果表明:L12相间存在3种稳定的平移界面以及2种过渡界面;界面的迁移性与界面结构有关,一个L12相的(100)和另一个L12相的(200)对应且有两个Ni原子面的界面以及(100)和(100)对应且有两个Ni原子面的稳定界面可以迁移,迁移前后界面结构保持不变,迁移的过程中形成过渡界面;而(100)和(200)对应且有一个Ni原子面的稳定界面则不可迁移.合金元素在不同的界面处有不同的偏聚和贫化倾向,Al原子在所有界面处贫化,V原子在所有界面处偏聚,Ni原子在可迁移界面处贫化,而在不可迁移界面处偏聚,且各元素在不同的界面处偏聚以及贫化程度不同.     

Ni75AlxV25-x合金中异相界面成分演化的微观相场模拟

采用微观相场模型研究界面原子结构和相变方向对Ni75AlxV25-x合金中异相间有序畴界和有序/无序相界成分演化的影响。结果表明:在异相间有序畴界处,V在有序畴界的DO22相一侧贫化,在有序畴界的L12相一侧偏聚;Al则在有序畴界的DO22相一侧偏聚,在有序畴界的L12相一侧贫化。Ni在异相间可迁移有序畴界处的成分受相变方向和界面结构的影响。在DO22相与无序相之间形成的相界处,Al和Ni偏聚,V则贫化;在L12相与无序相之间形成的相界处,Al和Ni贫化,V则偏聚。由于溶质拖拽效应,合金元素在有序畴界处的偏聚和贫化倾向不随有序畴界迁移改变,但程度变化。     

有序畴界原子结构及其迁移特征的微观相场研究

利用微观相场模型研究了DO22 (Ni3V) 相间有序畴界原子层次的结构及其迁移特征。研究表明：界面的迁移性与界面结构有关。界面的迁移过程中,V原子跃迁至最近邻的Ni格点处并与之交换,原子的跃迁行为具有位置选择性。原子跃迁行为的位置选择性使得界面迁移前后界面结构保持不变。界面迁移过程及其特征可以用过渡界面来表征,每一种可迁移界面都按照自有的原子跃迁模式进行迁移,并且在迁移的过程中只形成一种独特的过渡界面,界面迁移过程中的原子跃迁模式是诱导界面迁移的热力学和动力学最优化路径。     

Ni-Al-V合金中异相界面成分及其演化的微观相场模拟

基于微观相场模型模拟Ni-Al-V合金沉淀过程,研究合金中有序无序界面和异相间有序畴界的成分及其演化。研究表明,合金元素的偏聚和贫化与界面类型有关。在DO22相与无序相间的有序无序界面处,Ni和Al偏聚,V贫化;在L12相与无序相间的有序无序界面处,Ni和Al贫化,V偏聚;在异相间有序畴界处,V在界面的DO22相一侧贫化,在界面的L12相一侧偏聚;Al则在界面的DO22相一侧偏聚,在界面的L12相一侧贫化。Ni的成分分布与界面的形成方式有关。随着时间的进行,界面处合金元素的成分分布变得更加明锐,但合金元素的偏聚和贫化倾向不变。     

Ni_(75)Al_xV_(25-x)合金DO_(22)到L1_2相变过程异相界面的结构及其迁移特征

本文基于微观相场模型模拟了Ni75AlxV25-x(x=4.2,5..)合金中DO22(Ni3V)到L12(Ni3Al)相变过程.结合微观组织原子图像演化和界面处原子占位几率演化,研究了异相间有序畴界的结构及其迁移特征,提出了DO22到L12相变过程的机制.研究表明,L12与DO22相间存在5种界面,DO22到L12相变过程中,除了界面(002)D//(001)L之外,其他4种界面都可以迁移;在界面迁移过程中,界面(100)D//(200)L和界面(100)D//(200)L·1/2[001]在迁移前后,界面结构保持不变,而界面(002)D//(002)L·1/2[100]迁移后形成界面(002)D//(002)L,两者交替出现;相变过程中,界面迁移总是沿着最优化的路径进行原子跃迁和替换,遵循跃迁原子数目最少、跃迁路径最短原则.     

Ni_(75)Al_(6.5)V_(18.5)合金沉淀过程界面演化的微观相场模拟

采用微观相场动力学模型,模拟了Ni_(75)Al_(6.5)V_(18.5)合金的早期沉淀过程。通过分析原子演化图像、原子的占位几率,探讨了沉淀机制及一些非平衡现象。结果表明,可迁移界面均具有特定的原子跃迁模式,且原子跃迁呈现一定的规律。其中,异相界面(100)D∥(200)L和(100)D∥(200)L·1/2[001]在迁移前后,均保持原来的界面结构不变,而(200)D∥(100)L·1/2[100]迁移后形成(200)D∥(100)L,且这两种界面交替出现;L12相向DO22相的转变是异相界面迁移诱导的过程:两相界面处的Ni原子选择最优路径跃迁至最近邻的Al格点上,V原子则迁移向DO22畴内部,Al则向外迁移至两相界面处。异相界面迁移以原子跃迁和替换模式进行,遵循阻力最小和行程最短的规律,即L12相向DO22相的转变过程表现出热力学和动力学最优化的特点。     

Ni75AlxV25-x合金中反相畴界有序无序化的微观相场模拟

基于微观相场模型研究了Ni75AlxV25-x合金中L12-Ni3Al相间反相畴界和DO22-Ni3V相间反相畴界的有序无序化过程.结果表明,伴随着Ⅴ的富集,Al和Ni的贫化,L12相间反相畴界(200) L//(200)L·1/2[001]L和(200)L//(200)L均发生有序无序化;DO22相间反相畴界是否发生有序无序化与界面结构有关,伴随着Ni和Al的富集,Ⅴ的贫化,DO22相间反相畴界(001)D//(002)D处发生有序无序化,而反相畴界[100]D·1/2[100]D始终保持有序,且成分演化与(001)D//(002)D处完全相反.有序无序化过程中的反相畴界处的成分演化有利于第二相在界面处形核.反相畴界处无序相的长大伴随着部分晶粒的长大和部分晶粒的消失,反相畴界有序无序化可以视为晶粒粗化阶段的伴随过程.     

Microscopic phase-field simulation of ordered domain interfaces formed between DO22 phases along [100] direction

Ordered domain interfaces formed between DO22 (Ni3V) phases along [100] direction during the precipitation process of Ni75AlxV25-x alloys were simulated by using the microscopic phase-field model. The atomic structure, migration process, and compositions of interfaces were investigated. It is found that there are four kinds of stable ordered domain interfaces formed between DO22 phases along [100] direction and all of them can migrate. During the migration of interfaces, the jump of atoms shows site selectivity behaviors and each stable interface forms a distinctive transition interface. The atom jump selects the optimist way to induce the migration of interface, and the atomic structures of interfaces retain the same before and after the migration. The alloy elements have different preferences of segregation or depletion at different interfaces. At all the four kinds of interfaces, Ni and Al segregate but V depletes. The degrees of segregation and depletion are also different at different interfaces.     

A first-principles study on interfacial properties of Ni(001)/Ni3Nb(001)

The Ni (001) surface, Ni₃Nb (001) surface and Ni (001)/Ni₃Nb (001) interfaces were studied using the first-principles pseudopotential plane-wave method. The adhesion work, thermal stability and electronic structure of Ni/Ni₃Nb (001) interfaces were calculated to expound the influence of atom termination and stacking sequence on the interface strength and stability. Simulated results indicate that Ni and Ni₃Nb (001) surface models with more than eight atomic layers exhibit bulk-like interior. The (Ni+Nb)-terminated interface with hollow site stacking has the largest cohesive strength and critical stress for crack propagation and the best thermal stability among the four models. This interfacial Ni and the first nearest neighbor Nb atoms form covalent bonds across the interface region, which are mainly contributed by Nb 4d and Ni 3d valence electrons. By comparison, the thermal stability of Ni/Ni₃Nb (001) interfaces is worse than Ni/Ni₃Al (001) interface, implying that the former is harder to form. But the Ni/Ni₃Nb interface can improve the mechanical properties of Ni-based superalloys.     

First principles calculation of stable structure and adhesive strength of plated Ni/Fe（100） or Cu/Fe（100） interfaces

A study the with first principles calculation of the interfaces of the Ni layer or Cu layer on the Fe(100) surface formed with metal plating was performed. Ni or Cu atoms were shown to adopt the corresponding position to the bcc structure of the Fe(100) substrate. Other calculations showed that the interfaces of Ni (5 atomic layers)/Fe(100) (5 layers) or Cu (5 atomic layers)/Fe(100) (5 layers) had square lattices. The orientation relationship of Ni/Fe(100) interface corresponds to fcc-Ni(100)//bcc-Fe(100), Ni[011]//Fe[010], and Ni[0

1]//Fe[001]. Similar results were obtained for Cu/Fe(100) interfaces. This structure was supported by TEM analysis of plated Ni layer on Fe(100) surfaces. The adhesion strength of the Ni/Fe(100) interface evaluated by first principles calculation was higher than that of the Cu/Fe(100) interface. The experimental results of Hull cell iron plated with Ni or Cu supported the results of the calculation. These results indicate that the first principles calculation, which deals with the ideal interface at the atomic scale, has the potential to evaluate the adhesion strength of metallic material interfaces.     

Tension-Compression Asymmetry in Mechanical Behavior and Crystal Defect of Thin Ni/Ni3Al (001) Nanowires

利用分子动力学方法研究超薄Ni/Ni3Al(001)纳米线力学性能和晶体缺陷的拉压不对称,对应力-应变曲线和晶体曲线在不同的温度下进行比较。模拟表明在拉伸载荷作用下不全位错的施密特因子大于压缩载荷下的施密特因子,在10 K温度下的流变应力行为异常,同时超薄Ni/Ni3Al(001)纳米线在不同温度下都表现为抵抗压缩载荷能力比拉伸载荷强。结果显示超薄Ni/Ni3Al(001)纳米线具有显著的拉伸不对称特性。此外,堆积层错提高原子移动,不全位错从堆垛层错处发射。在促进位错发射过程中原子移动扮演着重要的角色;而且在拉-压载荷下不同晶体缺陷主要是点位错和层错,层错主要发生在4个{111}方向。研究拉压不对称与温度之间的关系,可以更准确和全面的理解超薄Ni/Ni3Al(001)纳米线的力学性能。     

Nin(n=2-6)原子簇的电子结构和磁性研究

采用MS—Xα方法研究了Nin(n=2—6)原子簇的电子结构和原子磁矩,发现团簇的几何对称性对原子磁矩和电子态密度的分布有重要影响．具有Oh点群对称的八面体原子簇Ni6的^3Eg轨道上存在很强的负交换耦合,呈现反铁磁耦合趋势;具有C3υ点群对称的三边金字塔结构的原子簇Ni5位于塔顶点的Ni原子与基面上的Ni原子磁矩方向相反,但大小不等,呈现出亚铁磁交换耦合特征．与金属Ni相比,有些Ni原子团簇磁性增强,有些团簇磁性减弱．这一结果能够较好地解释铁磁超微颗粒呈现出的表面磁性异常现象．     

Effects of coherency stress and vacancy sources/sinks on interdiffusion across coherent multilayer interfaces – Part II: Interface sharpening and intermixing rate

Vacancy-mediated interdiffusion in coherent Mo/V and Cu/Ni multilayers is simulated to evaluate the effects of coherency stress and vacancy sources/sinks on interface sharpening and the intermixing rate, using the phase field model developed in a previous paper for two limiting cases: ideal vacancy sources/sinks densely distributed or not present at all. Interface sharpening stems from a large diffusion coefficient asymmetry across the interface, which in turn originates from the large difference in vacancy formation and migration energies between the two constituent layers. Remarkable sharpening is found in Mo/V multilayers either with dense or without vacancy sources/sinks, but only in Cu/Ni with a high density of sources/sinks. Sharpening is suppressed by coherency stress in Cu/Ni regardless of the existence of vacancy sources/sinks, but only promoted in Mo/V with a high density of sources/sinks. The intermixing rate is suppressed in Mo/V by the introduction of a high density of vacancy sources/sinks that are parallel or perpendicular to the interfaces, or uniformly distributed in all orientations, but only promoted in Cu/Ni by the introduction of vacancy sources/sinks that are parallel to the interfaces. The intermixing rate is promoted in Mo/V by coherency stress regardless of the existence of vacancy sources/sinks, but promoted in Cu/Ni by coherency stress only when the vacancy sources/sinks are parallel to the interface or not present at all. The effects of that part of coherency stress induced by the mismatch in atomic volumes on interface sharpening and the intermixing rate are opposite to, but dominant over, those of the stress induced by lattice creation/annihilation in vacancy sources/sinks.