介质薄膜的透射光谱测量及其光学参数的分析

介绍介质薄膜透射光谱的测量以及基于分析薄膜透射光谱的计算薄膜光学参数的方法。对制备在玻璃基板上的二氧化钛，二氧化硅和氧化锌薄膜进行了可见光谱区的透射比测量，并用包络线方法和最优化方法对这些透明薄膜的光学参数进行了计算和分析。     

薄膜厚度对胶体晶体薄膜光学特性的影响

通过控制温度和湿度,用垂直沉积法快速制备出了不同厚度的高质量二氧化硅和聚苯乙烯胶体晶体薄膜。用透射光谱和反射光谱对制备的样品的光学特性进行了表征,并与理论计算结果进行了对比分析;用衍射光谱中的布拉格衍射峰两侧的波纹测量了薄膜厚度,并对薄膜厚度对其光学特性的影响进行了分析,为用厚度调制胶体晶体薄膜光学特性和实际应用创造了条件。     

磁控溅射SiC薄膜及其光电特性研究

用射频磁控溅射法制备了SiC薄膜,并对其进行了退火处理.用AFM观察了薄膜的表面形貌,测量了薄膜的厚度与透射光谱.用J.C.Manifacier提出并由R.Swanepoel加以修正和完善的包络线法对薄膜透射光谱进行了分析计算,并结合Tuac公式确定了薄膜的光学带隙.结果表明:在不同射频功率下制备的薄膜均有较强的蓝紫光吸收特性,在低功率下可制备出表面平整,吸收系数小,光学带隙大的薄膜;退火处理后薄膜的吸收系数减小,光学带隙增大,晶粒向圆形转化且尺寸变大.     

热丝CVD制备微晶硅薄膜的研究

采用热丝化学气相沉积技术制备微晶硅薄膜,利用X射线衍射谱、Raman散射谱、透射光谱和扫描电子显微镜等检测手段,系统地研究沉积过程中沉积气压对微晶硅薄膜晶粒尺寸、晶态比和光学带隙的影响,运用Tacu法则对薄膜的透射率和厚度进行计算分析,得到薄膜光学带隙与沉积气压之间的关系,结果表明薄膜的光学带隙随着沉积气压的升高而单调下降。     

用铝丝掺杂溅射ZnO薄膜的光电性能研究

本文采用射频磁控反应溅射法于常温下在硅片和玻璃基片上制备ZnO和掺铝ZnO薄膜,将铝丝置于ZnO靶材上共同溅射来达到掺杂的效果,利用不同长度的铝丝以获得不同的掺杂量。通过X射线衍射法对薄膜进行结构分析,利用紫外-可见分光光度计获得薄膜的透过率光谱,霍尔效应仪测量薄膜的电学性能。发现所制备的样品在可见光区域透过率达到80%以上,达到了透明膜的要求;掺Al后的ZnO膜电阻率最低达到了4.25×10-4Ω·cm;结构表征发现样品的(002)晶面有明显衍射峰。基于包络线方法通过透射谱拟合计算了薄膜样品的折射率和厚度。     

化学水浴法制备ZnS薄膜光学性能

利用薄膜分析系统测量不同沉积时间制备的ZnS薄膜透射谱,通过分析薄膜透射谱,来确定ZnS薄膜光学常数和禁带宽度.实验结果表明,在线性生长阶段,薄膜的沉积速率大约为1 nm/min,具有很好的线性关系,沉积0.5 h的ZnS薄膜在可见光范围内光透过率为82%左右.     

10.4—12.5μm单层红外增透膜的研究

红外光学薄膜的种类不但少，而且机械强度较差，尤其在中红外波段更是如此。根据薄膜光学理论计算了ＺｎＳ／Ｇｅ／ＺｎＳ、ＣｄＴｅ／Ｇｅ／ＣｄＴｅ和ＺｎＳｅ／Ｇｅ／ＺｎＳｅ三种ＡＲＣ组合的反射率和透射率。详细分析研究了吸收和色散对ＺｎＳ／Ｇｅ／ＺｎＳ极值透射率和反射率以及极值波长的影响。计算结果表明，ＺｎＳ／Ｇｅ／ＺｎＳ组合的光谱特性最好，吸收和色散对薄膜的光谱特性有一定影响。相对而言ＺｎＳ薄膜的机械强度较好。在理论计算的基础上，利用离子束辅助沉积方法制备ＺｎＳ薄膜，检测分析了薄膜的光谱性能，考察了薄膜的耐久性。     

外延SCNN电光薄膜生长及研究

用激光脉冲沉积(PLD)法在MgO(001)衬底上成功地生长、制备出了外延铌酸锶钡钠(SCNN)电光薄膜.对生长制备出的SCNN电光薄膜用X射线衍射对其微观结构进行了测量研究;X射线衍射结果显示生长在MgO(001)衬底上的SCNN电光薄膜是外延膜;对生长在MgO(001)衬底上的外延SCNN电光薄膜在200～900nm光谱范围的透射光谱进行了测量研究,通过对薄膜透射光谱的振荡曲线分析计算得到了SCNN电光薄膜的光学常数,结果发现外延SCNN电光薄膜的折射率符合单电子模型.     

透明导电CdIn2O4薄膜光学常数的计算

针对射频反应性溅射 Cd－ In合金靶沉积的透明导电 CdIn2O4薄膜可见光区和近红外透射区透射和反射谱，分别采用包络线法迭代计算和 Szczyrbowski提出的非均匀膜模型计算出了薄膜的光学常数。根据 Drude理论求出了自由载流子有效质量，并与通过等离子体波长λ p所确定的有效质量进行了比较。     

WO3电致变色薄膜制备过程中光学膜厚测量监控技术的研究

采用真空电子束蒸发方法制备WO3电致变色薄膜过程中，利用极值法光学膜厚测量技术监控薄膜的光学特性，对不同光学膜厚的WO3薄膜的原始态、着色态和退色态的光谱特性进行了对比分析。测试采用二电极恒电压方法，用分光光度计实时测量透过率的变化。结果证明以ITO玻璃作为比较片，极值法监控薄膜光学膜厚，当反射率达到第一极小值，即透过率达到第一极大值时，WO3薄膜得到最好的综合电致变色特性。     

Optical characterization of dielectric and semiconductor thin films by use of transmission data

A method to calculate the optical functions n(lambda) and k(lambda) by use of the transmission spectrum of a dielectric or semiconducting thin film measured at normal incidence is described. The spectrum should include the low-absorption region and the absorption edge to yield the relevant optical characteristics of the material. The formulas are derived from electromagnetic theory with no simplifying assumptions. Transparent films are considered as a particular case for which a simple method of calculation is proposed. In the general case of absorbing films the method takes advantage of some properties of the transmittance T(lambda) to permit the parameters in the two regions mentioned above to be calculated separately. The interference fringes and the optical path at the extrema of T(lambda) are exploited for determining with precision the refractive index and the film thickness. The absorption coefficient is computed at the absorption edge by an efficient iterative method. At the transition zone between the interference region and the absorption edge artifacts in the absorption curve are avoided. A small amount of absorption of the substrate is allowed for in the theory by means of a factor determined from an independent measurement, thus improving the quality of the results. Application of the method to a transmission spectrum of an a:Si(x)N(1-x):H film is illustrated in detail. Refractive index, dispersion parameters, film thickness, absorption coefficient, and optical gap are given with the help of tables and graphs.     

Optical study of zinc blend SnS and cubic In2S3:Al thin films prepared by chemical bath deposition

Multilayers of zinc blend SnS crystalline thin film have been deposited onto glass substrates by a chemical bath deposition (CBD) method. The envelope method, based on the optical transmission spectrum taken at normal incidence, has been successfully applied to determine the layer thickness and to characterize optical properties of thin films having low surface roughness. Optical constants such as refractive index n, extinction coefficient k, as well as the real (??_r) and imaginary (??_i) parts of the dielectric constant were determined from transmittance spectrum using this method. Obtained low value of the extinction coefficient in the transparency domain is a good indication of film surface smoothness and homogeneity. To perform the heterojunction structure based on SnS absorber material, cubic In₂S₃:Al was deposited on SnO₂:F/glass as window layer using CBD with different aluminum content. Optical properties of these films were evaluated.     

Determination of the optical constants of As–Se–Ag chalcogenide thick films with high precision for optoelectronics applications

Thin films of (As₅₀Se₅₀)_100?xAg_x (with 0?≤?x?≤?25 s) metal-chalcogenide glasses were deposited onto glass substrates by thermal evaporation technique under high vacuum (10^?6 mbar). The optical constants as well as the average thickness of the studied films are determined by the Swanepoel envelope method which is based on the optical transmission spectra measured in the spectral range 300–2500 nm. This method enables the transformation of the optical-transmission spectrum of a thin film of wedge-shaped thickness into the spectrum of a uniform film, whose thickness is equal to the average thickness of the non-uniform layer. The dispersion of the refractive index is discussed in terms of the Wemple–DiDomenico single-oscillator model. The optical absorption edge is described using the non-direct transition model proposed by Tauc relation. Analysis of the optical data revealed that an addition of Ag in the range from 0 to 25 at.% to the (As₅₀Se₅₀)_100?x binary alloys affected the optical parameters of the investigated thin films. For instance, the optical band gap decreased from 1.661 to 1.441 eV with increasing the Ag content from 0 to 25 at.%. The results were discussed in terms of Mott and Davis model as well as chemical-bond approach.     

Optical properties study of PLZT films deposited on sapphire Substrate

Lanthanum modified lead zirconate titanate (PLZT) thin films were fabricated on sapphire (0001) substrate by sol-gel method. The cell parameters of films were calculated with help of whole-pattern fitting procedure. The evolution of strain, shift of absorption edge and change in the band tailing with film thickness were found and analyzed for amorphous and polycrystalline PLZT films. The refractive index n was computed with help of “Envelope method” and dielectric function was calculated by fitting the measured optical transmission spectrum.     

Influence of substrate absorption on the optical and geometrical characterization of thin dielectric films

The role played by a glass substrate on the accurate determination of the optical constants and the thickness of a thin dielectric film deposited on it, when well-known envelope methods are used, is discussed. Analytical expressions for the two envelopes of the optical transmission spectra corresponding to film. with both uniform and nonuniform thicknesses are derived, assuming the substrate to be a weakly absorbing layer. It is shown that accurate determination of the refractive index and the film thickness is notably improved when the absorption of the substrate is considered. The analytical expressions for the upper and lower envelope, are used to characterize optically and geometrically both uniform and nonuniform amorphous chalcogenide films. The results obtained are compared with those derived by use of expressions for the envelopes that neglect the substrate absorption. The comparison shows that overestimated refractive indexes and underestimated thicknesses are obtained when the conventional approach, in which the substrate absorption is neglected, is used.     

Interpretation of reflection and transmission spectra for thin films: transmission

The optical behavior of a thin film, that is, peak positions and intensities, is discussed for transmission under a thin-film approximation. The infrared transmission spectra of thin films, both standing films and those on dielectric substrates, are simulated for s and p polarization at various angles of incidence. For spectral simulation, the matrix method is used in conjunction with noise-free complex refractive indices based on the dispersion theory. The peak positions in the simulated spectra are compared with transverse optic and longitudinal optic frequencies based on the macroscopic theory. The simulated peak intensities for the standing films are compared with the prediction based on the thin-film approximation. Furthermore, it is found from the spectral simulation for thin films on dielectric substrates that the peak intensity for a thin film may depend on the thickness and refractive index of the substrate.     

Method for determination of the dielectric function of a thin absorbing film on variable substrates from transmission spectra

Transmission spectra of bilayers of a strongly absorbing dye molecule on thin semitransparent metallic films show a pronounced variation of the shape as a function of the thickness of the metal film. The shape changes with increasing thickness of the metal film from the form of an absorption spectrum as determined by the imaginary part of the dielectric function to an antisymmetric shape characteristic of the dispersion of the real part of the dielectric function in the vicinity of a resonance. These different spectra shapes were exploited to derive the complex dielectric function of a dye layer from transmission spectra of the layer on metal films of a different thickness. This method proved to be a simple alternative to determination of the dielectric function of a thin film of a dye by spectroscopic ellipsometry.     

A new approach to the determination of optical constants and thickness of thin dielectric transparent films

A new calculating method to deduce optical constants n, k and thickness d from the fringe pattern of the transmission spectrum is proposed. In this method the optical parameters are determined using only one curve of the transmission spectra even for thin films where nd < /4. The method is demonstrated by experimental data obtained using evaporated vacuum deposited TiO₂ thin film on a glass substrate. The experimental values are in very good agreement with those calculated using the above described technique.     

Structural and optical properties of Ag2SeTe nano thin films prepared by thermal evaporation

Semiconducting Ag₂SeTe thin films were prepared with different thicknesses onto glass substrates at room temperature using thermal evaporation technique. The structural properties were determined as a function of thickness by XRD exhibiting no preferential orientation along any plane, however the films are found to have peaks corresponding to mixed phase. The XRD studies were used to calculate the crystallite size and microstrain of the Ag₂SeTe films. The calculated microstructure parameters reveal that the crystallite size increases and micro strain decreases with increasing film thickness. The refractive index, dielectric constants and thereby the optical bandgap of the films were calculated from transmittance spectral data recorded in the range 400?C1200 nm by UV?CVIS-Spectrometer. The direct optical bandgap of the Ag₂SeTe thin films deposited on glass substrates with different thicknesses 50?C230 nm were found to be in the range 1.48?C1.59 eV. The carrier density value is estimated to be around 9.8 × 10²¹ cm^?1 for the film thickness of 150 nm. The compositions estimated from the optical band gap studies reveal a value of 0.75 for Tellurium concentration. These structural and optical parameters are found to be very sensitive to the thin film thickness.     

Diffraction-based tracking of surface plasmon resonance enhanced transmission through a gold-coated grating

Surface plasmon resonance enhanced transmission through metal-coated nanostructures represents a highly sensitive yet simple method for quantitative measurement of surface processes and is particularly useful in the development of thin film and adsorption sensors. Diffraction-induced surface plasmon excitation can produce enhanced transmission at select regions of the visible spectrum, and wavelength shifts associated with these transmission peaks can be used to track adsorption processes and film formation. In this report, we describe a simple optical microscope-based method for monitoring the first-order diffracted peaks associated with enhanced transmission through a gold-coated diffraction grating. A Bertrand lens is used to focus the grating's diffraction image onto a CCD camera, and the spatial position of the diffracted peaks can be readily transformed into a spectral signature of the transmitted light without the use of a spectrometer. The surface plasmon peaks appear as a region of enhanced transmission when the sample is illuminated with p-polarized light, and the peak position reflects the local dielectric properties of the metal interface, including the presence of thin films. The ability to track the position of the plasmon peak and, thus, measure film thickness is demonstrated using the diffracted peaks for samples possessing thin films of silicon oxide. The experimental results are then compared with calculations of optical diffraction through a model, film-coated grating using the rigorously coupled wave analysis simulation method.