离子束外延生长（Ga，Mn，As）的退火研究

利用俄歇电子能谱(AES)和X射线衍射(XRD)分析了室温条件下离子束外延生长Ca、Mn、As样品，在不同的温度条件下进行退火后组分和元素分布的变化。结果表明退火有助于样品内部元素的均匀分布，温度为400℃会导致MnO2和Ga5.2Mn的结晶。     

(Ga,Mn)As稀磁半导体的杂质动力学模拟研究

结合第一性原理计算和动力学蒙特卡罗模拟研究了稀磁半导体(Ga,Mn)As中Mn杂质的沉积动力学规律。利用第一性原理计算和爬坡弹性带方法计算了Mn杂质的跃迁势垒和结合能,并把这些能量作为动力学蒙特卡罗模拟(Ga,Mn)As微观结构演化的输入数据。结果表明在外延生长退火下长时间的微观结构演化的背后机制是Ga空位调节Mn原子在Ga子晶格上进行扩散。这种扩散会导致Mn原子的聚集,进而降低了居里温度。此外,随着退火温度的升高Mn团簇聚集的速率也更快。在高温退火下容易导致相分离。     

Mn掺杂ZnO稀磁半导体的化学合成及磁性研究

采用化学方法制备了名义组分为Zn0.993Mn0.007O的Mn掺杂ZnO稀磁半导体材料,并研究了退火温度(Ts＝400,600,800℃)对其结构和磁性的影响.结果表明:在退火温度低于600℃条件下,合成的样品为单一纤锌矿结构的ZnO颗粒材料;当退火温度为800℃时,合成的样品中除了纤锌矿结构ZnO外还观察到ZnMnO3第二相的存在.磁性研究表明:经过600℃退火后的样品,其室温铁磁性最强,而经过800℃退火后的样品,其铁磁性几乎消失,并表现为增强的顺磁性.结合对样品的Raman光谱和紫外-可见吸收光谱的分析,表明Mn元素进入了ZnO晶格中并替代了ZnO中的Zn离子. 样品的室温铁磁性是源于(Zn,Mn)O的本征特性,并排除了样品中第二相导致其具有室温铁磁性的可能性.     

热处理对Ni50.3Mn24.5Ga25.2单晶预相变特性的影响

用提拉法生长的Ni50.3Mn24.5Ga25.2单晶样品,在真空中进行多种形式的热处理。通过测量交流磁化率曲线,研究了退火和淬火对Ni50.3Mn24.5Ga25.2单晶预马氏体和马氏体相变温度的影响。实验表明退火会明显降低预马氏体相变的温度,而对马氏体相变影响较小。还发现在1023K以下,预马氏体相变会随淬火温度的升高而逐步变得明显,而在1023K以上,则呈相反的趋势。另外,实验还表明,经过高温淬火后的样品,再次通过一定的退火处理,样品将恢复明显的预马氏体相变征候。分析表明,热处理是通过改变晶体的内应力来影响预马氏体相变征候的。     

磁控溅射Ni-Mn-Ga磁驱动记忆薄膜的组织结构与成分研究

利用射频磁控溅射技术成功地在Si衬底上沉积Ni Mn Ga 薄膜,并采用XRD、SEM、AFM 及EMPA系统研究Ni Mn Ga薄膜的晶体学结构、断面形貌、表面形貌、成分及其影响规律。结果表明,经823K退火1h Ni Mn Ga薄膜完全晶化,室温下呈L21型体心立方结构;断面形貌揭示Ni Mn Ga 薄膜呈柱状结构。Ni Mn Ga薄膜的表面粗糙度随溅射功率和溅射时间的增加而增大;Ni Mn Ga薄膜中Ga的含量受溅射功率影响较大, Ni 的含量受溅射时间影响较大。     

(Ga,Mn)As磁电输运性质的研究进展

综述了Ⅲ-Ⅴ族稀磁半导体(Ga,Mn)As磁电性质的研究进展,尤其是(Ga,Mn)As单层膜和多层膜结构的磁电输运性质的详细研究状况。关于(Ga,Mn)As的结构与物理性质的信息可由单层膜的反常霍尔效应、平面霍尔效应、电阻对温度的依赖关系与磁阻各向异性等磁电输运性质测量得到;而多层膜中观察到的自旋阀效应、自旋相关散射与层间交互耦合等现象,对加深稀磁半导体的基本物性认识、拓展稀磁半导体的实际应用空间非常重要。最后总结并展望了(Ga,Mn)As未来的发展趋势。     

基于ECR-PEMOCVD生长的稀磁半导体(Ga,Mn)N的特性

利用电子回旋共振-等离子体增强金属有机物化学气相沉积(ECR-PEMOCVD)技术,在蓝宝石(α-Al2O3)衬底上生长出Mn含量约为3%的(Ga,Mn)稀磁半导体薄膜.利用反射高能衍射(RHEED)、原子力显微镜(AFM)和X射线衍射(XRD)表征(Ga,Mn)N薄膜的表面形貌和结构特征.(Ga,Mn)N薄膜具有良好的(0002)择优取向和纤锌矿结构,表面形貌是由许多亚微米量级的晶粒按一致的取向规则堆砌而成.光致发光(PL)测量发现3.27eV附近出现施主-受主对(DAP)发光峰.超导量子干涉仪(SQUID)测量表明薄膜在室温下具有铁磁性,没有发现超顺磁性和自旋玻璃态,居里温度可达400K.     

磁控溅射制备五氧化二钒薄膜的研究

采用射频磁控溅射的方法,在不同条件下制备了氧化钒薄膜样品,分别在不同温度条件下做了退火处理,并对退火前后样品做了X射线衍射(XRD)、X射线光电子能谱(XPS)和激光扫描共聚焦显微镜测试与分析,旨在得出制备良好的V2O5 薄膜的条件。     

均匀化退火对铝合金阳极活化性能的影响

通过添加适量的Ga,In,Sn,Bi,Pb,Mn等合金元素制备了活化性能优良的七元铝合金阳极;采用极化曲线测试并结合扫描电子显微镜分析技术,研究了均匀化退火对铝阳极活化性能的影响.结果表明:退火温度低于400℃时,晶体缺陷的大量减少是导致铝阳极活性变化的主导因素,铝阳极活性随退火温度提高而降低;退火温度高于400℃后,析出相大量固溶成为导致铝阳极活性变化的主导因素,铝阳极活化性能随退火温度提高而增强.整个退火过程中,晶体缺陷的变化对铝合金阳极活性改变影响最大.     

铜锌锡硫硒(CZTSSe)薄膜的制备工艺及性能表征

本文以油胺为溶剂,采用液相法制备了Cu2ZnSnS4(CZTS)纳米颗粒,通过CZTS纳米浆滴涂法制备了CZTS薄膜,而后经固态硒源硒化工艺得到了CZTSSe薄膜,研究了制备工艺条件反应温度、气压、物质配比及退火温度等对样品的晶体结构及成分的影响。采用X射线衍射仪(XRD)、热重-差示扫描量热法(TG-DSC)、能谱分析(EDAX)对制备的CZTS粉末和CZTSSe薄膜样品进行了表征,结果表明在化学计量比和保压的条件下可得到单相性较好的前驱体粉末,由此得到的CZTSSe薄膜在500℃的硒化退火温度下能够形成具有单一锌黄锡矿结构、结晶程度较好的薄膜;由EDAX的成分分析结果可知,薄膜具有贫铜的成分,而且,随着温度的升高,Se元素含量增加最后趋于平稳,而S元素含量先减少后有增加趋势。     

p,V, T and derived thermodynamic data for toluene,trichloromethane, dichloromethane,acetonitrile, aniline,and n-dodecane

Experimentally determined p,V,T data are reported for toluene, trichloromethane, dichloromethane, acetonitrile, aniline, and n-dodecane at 278, 288, 298, 313, and 323 K, except for dichloromethane, for which the highest temperature was 298 K. At each temperature, measurements were done at pressures up to about 280 MPa or (for aniline and n-dodecane) at a lower pressure slightly below the freezing pressure at the temperature of measurement. Values of the isobaric expansivity isothermal compressibility and (for toluene, trichloromethane, dichloromethane, and acetonitrile) internal pressure, derived from the p,V,T data, are presented.     

微波消解-ICP-AES法测定茶叶中钾、钠、磷、硫、铁、锰、铜、锌、钙、镁方法研究

通过优化微波消解条件,并根据不同元素性质,调谐ICP-AES工作条件至最佳,实现了茶叶中K、Na、P、S以及Fe、Mn、Cu、Zn、Ca、Mg 10种元素的同时测定。10种元素测定结果 RSD%为0.67(Cu)～5.57(Na),回收率为84.0%(Na)～101.5%(Fe),检出限为0.001(Mn)～0.029(S)μg·g-1,表明该方法准确可靠,能够满足茶叶中K、Na、P、S、Fe、Mn、Cu、Zn、Ca、Mg分析要求。     

Optical properties of the metals Al, Co, Cu, Au, Fe, Pb, Ni, Pd, Pt, Ag, Ti, and W in the infrared and far infrared

Infrared optical constants collected from the literature are tabulated. The data for the noble metals and Al, Pb, and W can be reasonably fit using the Drude model. It is shown that -epsilon1(omega) = epsilon2(omega) approximately omega(2)(p)/(2omega(2)(tau)) at the damping frequency omega = omega(tau). Also -epsilon1(omega(tau)) approximately - (1/2) epsilon1(0), where the plasma frequency is omega(p).     

Dry Autoclaving for the Nanofabrication of Sulfides,Selenides, Borides,Phosphides, Nitrides,Carbides, and Oxides

This review compiles various nanostructures fabricated by a distinct “dry autoclaving” approach, where the chemical reactions are carried out without solvents; above the dissociation temperature of the chemical precursor(s) at elevated temperature in a closed reactor. The diversity to fabricate carbides (SiC, Mo₂C, WC), oxides (VOx‐C, ZnO, Eu₂O₃, Fe₃O₄, MoO₂), hexaborides (LaB₆, CeB₆, NdB₆, SmB₆, EuB₆, GdB₆), nitrides (TiN, NbN, TaN), phosphides (PtP₂, WP), sulfides (ZnS, FeS/C, SnS/C, WS₂, WS₂/C), and selenides (Zn_1‐xMn_xSe/C, Cd_1‐xMn_xSe/C), with various shapes and sizes is accounted with plausible applications. This unique single‐step, solvent‐free synthetic process opens up a new route in the growing nanomaterials science; owing to its considerable advantages on the existing approaches.     

抓管理重服务求可靠要效益--记广西计量测试研究所国家实验室认可工作

我所2001年9月份顺利地通过了中国实验室认可委紧张而严格的评审,得到了权威机构认可,成为西南地区较早通过国家实验室认可的省级计量校准机构.在建立质量体系、运行质量体系走过了艰辛之路,我们将全所职工的艰辛之路介绍给大家,希望能给将要申请认可的实验室得以参考.     

标准·质量·认证·会议(英文)

Standards IGRS:First Complete International Standards System in 3C Collaboration Field After ISO and IEC released three international standards of Intelligent Grouping and Resource Sharing (IGRS) including Core Protocol,File Communication Framework and Device Validation,four standards of IGRS,Application Framework,Basic Application,Service Types and Devices Types,got approved with high passing rate in the voting of Final Draft International Standard (FDIS) and will be officially issued soon around the world. It symbolizes that all     

Powder X-Ray Reference Patterns of Sr2RGaCu2Oy (R = Pr,Nd, Sm,Eu, Gd,Dy, Ho,Er, Tm,and Y)

X-Ray Rietveld refinements were conducted on a series of eleven lanthanide phases, Sr₂RGaCu₂O_y (2112 phase, R = Pr, Nd, Sm, Eu, Gd, Dy, Ho, Y, Er, Tm, and Yb) that are structurally related to the high T_c superconductor Ba₂YCu₃O₇ (213). In the 2112 structure, instead of square planar Cu-O chains, tetrahedral GaO4 chains were found to run in a zig-zag fashion along the diagonal of the basal 213 ab-direction. Reference powder patterns for these compounds were prepared by using the Rietveld decomposition technique. The unit cell volume of these compounds follows the expected trend of the lanthanide contraction. The lattice parameters range from a = 22.9694(3) Å, b = 5.5587(2) Å, and c = 5.44743(7) Å for R = Pr, to a = 22.8059(2) Å, b = 5.46031(5) Å, and c = 5.37773(5) Å for R = Yb. An electon diffraction study of the Sm- and Er-analogs showed characteristic diffuse streaks along the b-axis, suggesting some disorder within the GaO₄ chains.